公开(公告)号：US10923306B2

公开(公告)日：2021-02-16

申请号：US16351956

申请日：2019-03-13

Applicant: Applied Materials, Inc.

Inventor： Svetlana B. Radovanov ,  Bon-Woong Koo ,  Alexandre Likhanskii

IPC: H05B31/26 ,  H01J7/24 ,  H01J27/02 ,  H01J27/08

Abstract: An indirectly heated cathode ion source having an electrically isolated extraction plate is disclosed. By isolating the extraction plate, a different voltage can be applied to the extraction plate than to the body of the arc chamber. By applying a more positive voltage to the extraction plate, more efficient ion source operation with higher plasma density can be achieved. In this mode the plasma potential is increased, and the electrostatic sheath reduces losses of electrons to the chamber walls. By applying a more negative voltage, an ion rich sheath adjacent to the extraction aperture can be created. In this mode, conditioning and cleaning of the extraction plate is achieved via ion bombardment. Further, in certain embodiments, the voltage applied to the extraction plate can be pulsed to allow ion extraction and cleaning to occur simultaneously.

公开(公告)号：US10896799B1

公开(公告)日：2021-01-19

申请号：US16555064

申请日：2019-08-29

Applicant: Applied Materials, Inc.

Inventor： Klaus Becker ,  Carlos M. Goulart ,  Daniel Alvarado ,  Daniel R. Tieger ,  Alexander S. Perel

IPC: H01J37/08 ,  H01J27/08 ,  H01J37/24 ,  H01J37/248 ,  H01J37/16 ,  H01J27/02

Abstract: An IHC ion source with multiple configurations is disclosed. For example, an IHC ion source comprises a chamber, having at least one electrically conductive wall, and a cathode and a repeller disposed on opposite ends of the chamber. Electrodes are disposed on one or more walls of the ion source. Bias voltages are applied to at least one of the cathode, repeller and the electrodes, relative to the electrically conductive wall of the chamber. Further, the IHC ion source comprises a configuration circuit, which receives the various voltages as input voltages, and provides selected output voltages to the cathode, repeller and electrodes, based on user input. In this way, the IHC ion source can be readily reconfigured for different applications without rewiring the power supplies, as is currently done. This configuration circuit may be utilized with other types of ion sources as well.

公开(公告)号：US10854416B1

公开(公告)日：2020-12-01

申请号：US16565805

申请日：2019-09-10

Applicant: Applied Materials, Inc.

Inventor： Adam M. McLaughlin ,  Craig R. Chaney ,  Jordan B. Tye

IPC: H01J37/08 ,  H01J11/28 ,  H01J27/02

Abstract: An ion source having a thermally isolated repeller is disclosed. The repeller comprises a repeller disk and a plurality of spokes originating at the back surface of the repeller disk and terminating in a post. In certain embodiments, the post may be hollow through at least a portion of its length. The use of spokes rather than a central stem may reduce the thermal conduction from the repeller disk to the post. By incorporating a hollow post, the thermal conduction is further reduced. This configuration may increase the temperature of the repeller disk by more than 100° C. In certain embodiments, radiation shields are provided on the back surface of the repeller disk to reduce the amount of radiation emitted from the sides of the repeller disk. This may also help increase the temperature of the repeller. A similar design may be utilized for other electrodes in the ion source.

公开(公告)号：US20200288561A1

公开(公告)日：2020-09-10

申请号：US16764658

申请日：2018-10-24

Applicant: KOREA ATOMIC ENERGY RESEARCH INSTITUTE

Inventor： Sungryul HUH

IPC: H05H1/46 ,  H01J37/32 ,  H01J27/02

Abstract: The present disclosure relates to a system and method for continuously supplying negative ions using multi-pulsed plasma sources. The system includes a plurality of plasma generators each to generate plasma by applying pulsed power to the electronegative gas from a gas source; a negative ion supply unit connected to the plasma generators to receive the plasmas transferred therefrom and to continuously supply ions; and a controller connected to the plurality of plasma generators and configured to control characteristics of the pulsed powers delivered to the respective plasma generators and to adjust phase shift associated with the pulsed power envelopes. By adjusting the phase shift, the controller enables a plasma in one of the plasma generators to be in an after-glow state when a plasma in another plasma generator is in an active-glow state.

公开(公告)号：US20200051773A1

公开(公告)日：2020-02-13

申请号：US16101822

申请日：2018-08-13

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Craig R. Chaney ,  Adam M. McLaughlin

IPC: H01J37/08 ,  H01J27/02

Abstract: A system for reducing clogging and deposition of feed gas on a gas tube entering an ion source chamber is disclosed. To lower the overall temperature of the gas tube, a gas bushing, made of a thermally isolating material, is disposed between the ion source chamber and the gas tube. The gas bushing is made of a thermally isolating material, such as titanium, quartz, boron nitride, zirconia or ceramic. The gas bushing has an inner channel in fluid communication with the ion source chamber and the gas tube to allow the flow of feed gas to the ion source chamber. The gas bushing may have a shape that is symmetrical, allowing it to be flipped to extend its useful life. In some embodiments, the gas tube may be in communication with a heat sink to maintain its temperature.

公开(公告)号：US10549989B2

公开(公告)日：2020-02-04

申请号：US15932194

申请日：2018-02-16

Applicant: Hitachi, Ltd.

Inventor： Hiroyasu Shichi ,  Keiji Watanabe ,  Daisuke Ryuzaki

IPC: B81C1/00 ,  H01L21/687 ,  H01J27/02 ,  H01J37/305 ,  H01J37/30

Abstract: A sufficient processing speed and sufficient processing accuracy are obtained in a microstructure manufacturing method using ion beams. The microstructure manufacturing method includes the steps of: (a) irradiating a first region of a sample with a first ion beam (projection ion beam) formed by being passed through a first opening portion of a first mask, and etching the sample; and (b) irradiating a second region that is wider than the first region in a direction along a beam width, with a second ion beam (projection ion beam), and processing the sample. Furthermore, a magnitude of a skirt width of a longitudinal section of the second ion beam is smaller than a magnitude of a skirt width of a longitudinal section of the first ion beam.

公开(公告)号：US10390416B2

公开(公告)日：2019-08-20

申请号：US15630968

申请日：2017-06-23

Applicant: SMK Corporation

Inventor： Koichiro Ejiri ,  Haruhiko Kondo

IPC: H05B41/288 ,  H01J27/02 ,  H02H7/127 ,  H02J1/10 ,  H02J13/00 ,  H04M19/00 ,  H01R13/62 ,  H01R13/635

Abstract: The respective proportionality constants of magnetic force by magnetic field producing portion for biasing the plug in the direction of insertion and resilient force by a spring mechanism for biasing the plug in the direction of extraction are adjusted in such a manner that the resilient force is greater than the magnetic force until the plug pin reaches an intermediate insertion position at which the plug pin comes into proximity to or separates from the socket contact, whereas the magnetic force is greater than the resilient force at a position at which the plug pin is inserted into a complete insertion position for a hot-line connection to the socket contact. The plug pin in the vicinity of the intermediate insertion position, at which there is a possibility of occurrence of an arc discharge, is ejected by the resilient force.

公开(公告)号：US10334714B2

公开(公告)日：2019-06-25

申请号：US15724906

申请日：2017-10-04

Applicant: THE CHARLES STARK DRAPER LABORATORY, INC.

Inventor： Jonathan J. Bernstein

IPC: H05H3/02 ,  H01J27/02 ,  G21K1/00 ,  B28B11/24 ,  B22F7/04 ,  C25D3/12 ,  C25D3/56 ,  C25D5/02 ,  C25D13/02

Abstract: A bi-directional device for generating or absorbing atoms or ions. In some embodiments, the device comprises a solid-phase ion-conducting material, a first electrode positioned on a first surface of the solid-phase ion-conducting material, and a second electrode positioned on a second surface of the solid-phase ion-conducting material. The first electrode includes a plurality of triple phase boundaries, each located at an interface between the solid-phase ion-conducting material and the first electrode. A density of the triple phase boundaries is in the range of about 104 m/m2 to about 2×107 m/m2 on the first surface of the ion-conducting material. A method of operating the bi-directional device and a method of fabricating a bi-directional device are also provided.

公开(公告)号：US10312820B2

公开(公告)日：2019-06-04

申请号：US16156834

申请日：2018-10-10

Applicant: Accion Systems, Inc.

Inventor： Paul E. Fogel

IPC: H02M3/335 ,  H01J27/02 ,  H02M1/08 ,  H02M3/337 ,  H02M7/10 ,  H02M1/00

Abstract: A polarity-selectable high voltage direct current power supply including a first drive assembly that transforms a first low voltage DC input into a first medium voltage alternating current output; a first HV output assembly that transforms the first LV AC output into a first HV DC output, wherein the first HV output assembly defines a first input stage; a polarity selector coupled between the second output junction of the first drive assembly and the first and second input stages of the first HV output assembly, the polarity selector operable between a first configuration and a second configuration; wherein in the first configuration the first HV DC output has a positive polarity; and wherein in the second configuration the first HV DC output has a negative polarity.

公开(公告)号：US10304656B2

公开(公告)日：2019-05-28

申请号：US15526644

申请日：2014-11-26

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyuki Muto ,  Yoshimi Kawanami

IPC: H01J37/28 ,  H01J37/08 ,  H01J37/147 ,  H01J27/26 ,  F25D19/00 ,  H01J27/02 ,  H01J37/285

Abstract: In this invention, vibrations generated by a freezer from a cooling mechanism for cooling an ion source emitter tip are prevented from being transmitted to the emitter tip as much as possible, while the cooling capability of the cooling mechanism is improved widely. The ion beam device (10) is equipped with: an ion source housing (22) provided with an emitter tip (45) and defining an ion source chamber (27) supplied with an ionization gas or gas molecules; a gas pot (51) provided in the ion source chamber (27) so as to be thermally connected to the emitter tip (45) and accommodated so as to have no direct physical contact with a cooling stage (57) of a freezer (52); and a spacer (59) provided on the peripheral surface of the cooling stage (57) housed by the gas pot (51) and maintaining a given interval or greater between the peripheral surface of the cooling stage (57) and the internal peripheral surface of the gas pot (52).