CHARGED PARTICLE BEAM APPARATUS
    12.
    发明申请

    公开(公告)号:US20220199356A1

    公开(公告)日:2022-06-23

    申请号:US17603255

    申请日:2019-04-19

    Abstract: A charged particle beam apparatus including a winding aberration corrector capable of correcting a chromatic aberration is provided. A multi-pole lens includes a magnetic core 150, a plurality of current lines 101 to 112, a plurality of wire-shaped electrodes 301 to 312, insulating electrode fixing portions 313 to 342 for fixing the plurality of electrodes to a structure in a vacuum container, and conductive shields 320, 321 set to a reference potential, which are provided between the electrode fixing portion and a central axis of the magnetic core, main line portions of the plurality of current lines are arranged axisymmetrically with respect to the central axis of the magnetic core along an inner wall of the magnetic core, and portions of the plurality of electrodes parallel to the central axis of the magnetic core are arranged axisymmetrically with respect to the central axis of the magnetic core.

    Charged Particle Beam System
    13.
    发明申请

    公开(公告)号:US20220108864A1

    公开(公告)日:2022-04-07

    申请号:US17512825

    申请日:2021-10-28

    Abstract: A charged particle beam system includes a charged particle source that generates a first charged particle beam and a multi beam generator that generates a plurality of charged particle beamlets from an incoming first charged particle beam. Each individual beamlet is spatially separated from other beamlets. The charged particle beam system also includes an objective lens that focuses incoming charged particle beamlets in a first plane so that a first region in which a first individual beamlet impinges in the first plane is spatially separated from a second region in which a second individual beamlet impinges in the first plane. The charged particle beam system also includes a projection system and a detector system including a plurality of individual detectors. The projection system images interaction products leaving the first region within the first plane due to impinging charged particles onto a first detector and images interaction products leaving the second region in the first plane onto a second detector.

    Multiple electron beams irradiation apparatus

    公开(公告)号:US11139138B2

    公开(公告)日:2021-10-05

    申请号:US16809611

    申请日:2020-03-05

    Abstract: A multiple electron beam irradiation apparatus includes a forming mechanism which forms multiple primary electron beams; a plurality of electrode substrates being stacked in each of which a plurality of openings of various diameter dimensions are formed, the plurality of openings being arranged at passage positions of the multiple primary electron beams, and through each of which a corresponding one of the multiple primary electron beams passes, the plurality of electrode substrates being able to adjust an image plane conjugate position of each of the multiple primary electron beams depending on a corresponding one of the various diameter dimensions; and a stage which is capable of mounting thereon a target object to be irradiated with the multiple primary electron beams having passed through the plurality of electrode substrates.

    Charged particle beam device
    17.
    发明授权

    公开(公告)号:US10991543B2

    公开(公告)日:2021-04-27

    申请号:US16509694

    申请日:2019-07-12

    Abstract: The present disclosure is to provide a charged particle beam device capable of achieving both high resolution by setting of a short WD and improvement of detection efficiency when setting a long WD. According to an aspect for achieving the above-described object, there is suggested a charged particle beam device including: an objective lens for converging a charged particle beam emitted from a charged particle source; a sample stage having a first driving mechanism for moving a sample to be irradiated with the charged particle beam between a first position and a second position more separated from the objective lens than the first position; a detection surface for detecting charged particles emitted from the sample; and a second driving mechanism for moving the detection surface between within a movable range of the sample between the first position and the second position and out of the movable range of the sample.

    Plasmon-excited electron beam array for complementary patterning

    公开(公告)号:US10861668B2

    公开(公告)日:2020-12-08

    申请号:US16128441

    申请日:2018-09-11

    Abstract: A system for generating an electron beam array, comprising a light source, a first substrate having a plurality of plasmonic lenses mounted thereon, the plasmonic lenses configured to received light from the light source and produce an electron emission, and a plurality of electrostatic microlenses configured to focus the electron emissions into a beam for focusing on a wafer substrate. A light source modulator and digital micro mirror may be included which captures light from the light source and projects light beamlets on the plasmonic lenses.

    Apparatus, method and system for imaging and utilization of SEM charged particles

    公开(公告)号:US10770262B1

    公开(公告)日:2020-09-08

    申请号:US16198356

    申请日:2018-11-21

    Abstract: A scanning electron microscope (SEM) system includes an SEM objective that emits an electron beam toward a sample, causing emission of charged particles including secondary electrons, Auger electrons, backscattered electrons, anions and cations. The SEM system includes electron optics elements that are configured to establish electric fields around the sample that accelerate charged particles toward a detector. A two-dimensional distribution of locations of incidence of the charged particles on the detector is indicative of energies of the charged particles and their emission angles from the sample. A three-dimensional spatial distribution of charged particles emitted from the sample is recovered by performing an Abel transform over the distribution on the detector. The energies and emission angles of the charged particles are then determined from the three-dimensional spatial distribution.

    Deflection sensitivity calculation method and deflection sensitivity calculation system

    公开(公告)号:US10707048B2

    公开(公告)日:2020-07-07

    申请号:US16253767

    申请日:2019-01-22

    Inventor: Ryo Tajima

    Abstract: According to one embodiment, provided is a deflection sensitivity calculation method for calculating deflection sensitivity of a deflector in an electron beam irradiation apparatus that irradiates an irradiation object on a stage with an electron beam by causing the deflector to deflect the electron beam, the deflection sensitivity calculation method including: irradiating an area that covers an adjustment plate with an electron beam by scanning a deflection parameter that controls deflection of the deflector in a predetermined width; detecting a current value detected from the adjustment plate; forming an image corresponding to the detected current value, a number of pixels of the image being known; calculating the number of pixels of a portion corresponding to the adjustment plate in the formed image; and calculating the deflection sensitivity of the deflector.

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