公开(公告)号：US09616223B2

公开(公告)日：2017-04-11

申请号：US11323896

申请日：2005-12-30

Applicant: Michael A. Schugt ,  Kamal D. Mothilal ,  David A. Ruben ,  Lary R. Larson ,  Michael F. Mattes

Inventor： Michael A. Schugt ,  Kamal D. Mothilal ,  David A. Ruben ,  Lary R. Larson ,  Michael F. Mattes

IPC: H05K1/16 ,  A61N1/05 ,  A61B5/0215 ,  H05K1/02 ,  B81B3/00 ,  H01L21/48 ,  H05K3/40

CPC classification number: A61N1/056 ,  A61B5/0215 ,  B81B3/0072 ,  B81C2201/0167 ,  H01L21/4857 ,  H05K1/0271 ,  H05K3/4061 ,  H05K3/4092

Abstract: Media-exposed interconnects for transducer modules are disclosed. The transducers may be sensing transducers, actuating transducers, IC-only transducers, or combinations thereof, or other suitable transducers. The transducers may be used in connection with implantable medical devices and may be exposed to various media, such as body fluids. The media-exposed interconnects for transducer modules may allow transducers to communicate electrically with other components, such as implantable medical devices.

公开(公告)号：US20170088412A1

公开(公告)日：2017-03-30

申请号：US15273772

申请日：2016-09-23

Applicant: Robert Bosch GmbH

Inventor： Frederik Ante ,  Maximilian Amberger

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0054 ,  B81B2201/0264 ,  B81B2207/098 ,  B81C1/00309 ,  B81C1/00333 ,  B81C2201/0167 ,  B81C2201/053 ,  H01L2224/27013

Abstract: A microelectronic component arrangement includes a sensor and a carrier. The sensor has a detection surface and a region including contact elements situated at a first distance with respect to one another. The carrier includes a mounting surface, and the sensor is fixed on the carrier by the contact elements situated at a first distance with respect to one another at least regionally. The detection surface is opposite the mounting surface in a manner having a second distance with respect to the mounting surface. The contact elements are wetted by a mechanically stabilizing material, the region including the contact elements is enclosed by the mechanically stabilizing material, and the detection surface is free of the mechanically stabilizing material.

公开(公告)号：US09580304B2

公开(公告)日：2017-02-28

申请号：US14706941

申请日：2015-05-07

Applicant: Texas Instruments Incorporated

Inventor： Nicholas Stephen Dellas

IPC: H01L29/15 ,  B81C1/00 ,  B81B3/00 ,  H01L21/324 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/408 ,  B81B3/0072 ,  B81B2203/0118 ,  B81C1/00666 ,  B81C2201/0167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/3245 ,  H01L21/823864 ,  H01L23/291 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/778 ,  H01L29/7787

Abstract: A microelectronic device contains a high performance silicon nitride layer which is stoichiometric within 2 atomic percent, has a low stress of 600 MPa to 1000 MPa, and has a low hydrogen content, less than 5 atomic percent, formed by an LPCVD process. The LPCVD process uses ammonia and dichlorosilane gases in a ratio of 4 to 6, at a pressure of 150 millitorr to 250 millitorr, and at a temperature of 800° C. to 820° C.

Abstract translation: 微电子器件含有化学计量在2原子％以内的高性能氮化硅层，其具有600MPa至1000MPa的低应力，并且通过LPCVD工艺形成的氢含量低于5原子％。 LPCVD方法使用氨和二氯硅烷气体的比例为4至6，压力为150毫托至250毫托，温度为800℃至820℃。

公开(公告)号：US20160368765A1

公开(公告)日：2016-12-22

申请号：US15254828

申请日：2016-09-01

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Earl Vedere Atnip ,  Raul Enrique Barreto ,  Kelly J. Taylor

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00666 ,  B81B3/0072 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00365 ,  B81C2201/0108 ,  B81C2201/0132 ,  B81C2201/0167 ,  B81C2201/0178

Abstract: In described examples, a MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.

Abstract translation: 在所描述的示例中，通过在衬底上形成牺牲层并在牺牲层上形成第一金属层来形成MEMS器件。 随后，将第一金属层暴露于氧化环境中，氧化暴露于氧化环境的第一金属层的表面层，以形成第一金属层的天然氧化物层。 随后在第一金属层的自然氧化物层上形成第二金属层。 随后去除牺牲层，形成释放的金属结构。

公开(公告)号：US20160355392A1

公开(公告)日：2016-12-08

申请号：US15238854

申请日：2016-08-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anthony K. Stamper ,  John G. Twombly

IPC: B81B3/00 ,  H01H59/00 ,  B81C1/00 ,  G06F17/50

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

公开(公告)号：US20160244321A1

公开(公告)日：2016-08-25

申请号：US15148130

申请日：2016-05-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81B3/00 ,  H01H59/00 ,  H01H1/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Abstract translation: 形成微机电系统（MEMS）的方法包括在MEMS的空腔内的第一绝缘体层上形成下电极。 该方法还包括在下部电极的顶部上形成上部电极，该上部电极至少部分地与下部电极接触。 下电极和上电极的形成包括调节下电极和上电极的金属体积以改变光束弯曲。

公开(公告)号：US20160096721A1

公开(公告)日：2016-04-07

申请号：US14963844

申请日：2015-12-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81B3/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US09181087B2

公开(公告)日：2015-11-10

申请号：US13038459

申请日：2011-03-02

Applicant: Dennis Mortensen ,  Pirmin Hermann Otto Rombach

Inventor： Dennis Mortensen ,  Pirmin Hermann Otto Rombach

IPC: B81C1/00 ,  B81B3/00 ,  H04R19/00

CPC classification number: B81C1/00666 ,  B81B3/0078 ,  B81B2201/0257 ,  B81C2201/0167 ,  H04R19/005 ,  Y10T29/41 ,  Y10T428/24802 ,  Y10T428/249921 ,  Y10T428/25

Abstract: The present invention refers to a flat back plate, e.g. for MEMS capacitors e.g. for MEMS microphones. For that the back plate comprises a tensile element that exerts a horizontal tensile stress on its environment.

Abstract translation: 本发明涉及平板背板，例如 用于MEMS电容器 用于MEMS麦克风。 为此，背板包括在其环境上施加水平拉伸应力的拉伸元件。

公开(公告)号：US09181081B2

公开(公告)日：2015-11-10

申请号：US13962892

申请日：2013-08-08

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Kei Obara ,  Yoshiaki Sugizaki ,  Yoshiaki Shimooka

IPC: H01L29/84 ,  B81B7/00

CPC classification number: B81B7/0051 ,  B81B7/0032 ,  B81B7/0035 ,  B81B7/0038 ,  B81C2201/0167 ,  B81C2203/0136

Abstract: According to one embodiment, an electrical component comprises a substrate, a functional element formed on the substrate, a first layer which includes through holes, and forms a cavity that stores the functional element on the substrate, and a second layer which is formed on the first layer, and closes the through holes. The first layer includes a first film, a second film on the first film, and a third film on the second film. A Young's modulus of the second film is higher than a Young's modulus of the first film and the third film.

Abstract translation: 根据一个实施例，电气部件包括基板，形成在基板上的功能元件，包括通孔的第一层，并且形成将功能元件存储在基板上的空腔和形成在基板上的第二层 第一层，并关闭通孔。 第一层包括第一膜，第一膜上的第二膜和第二膜上的第三膜。 第二膜的杨氏模量高于第一膜和第三膜的杨氏模量。

公开(公告)号：US09150407B2

公开(公告)日：2015-10-06

申请号：US13945892

申请日：2013-07-18

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Tzung-Han Tan ,  Bang-Chiang Lan ,  Ming-I Wang ,  Chien-Hsin Huang ,  Meng-Jia Lin

IPC: H04R31/00 ,  B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00246 ,  B81B3/0072 ,  B81B2203/04 ,  B81B2207/015 ,  B81C2201/0167

Abstract: A method for fabricating a microelectromechanical system (MEMS) device of the present invention includes the following steps: providing a substrate, comprising a circuit region and a MEMS region separated from each other; forming an interconnection structure on the substrate in the circuit region, and simultaneously forming a plurality of dielectric layers and a first electrode on the substrate in the MEMS region, wherein the first electrode comprises at least two metal layers formed in the dielectric layers and a protection ring formed in the dielectric layers and connecting two adjacent metal layers, so as to define an enclosed space between the two adjacent metal layers; forming a second electrode on the first electrode; and removing the dielectric layers outside the enclosed space in the MEMS region to form a cavity between the electrodes.

Abstract translation: 本发明的微机电系统（MEMS）器件的制造方法包括以下步骤：提供包括彼此分离的电路区域和MEMS区域的衬底; 在所述电路区域中的所述衬底上形成互连结构，并且在所述MEMS区域中的所述衬底上同时形成多个电介质层和第一电极，其中所述第一电极包括形成在所述电介质层中的至少两个金属层和保护层 环形成在电介质层中并连接两个相邻的金属层，以便限定两个相邻金属层之间的封闭空间; 在所述第一电极上形成第二电极; 并且去除MEMS区域中的封闭空间外的电介质层，以在电极之间形成空腔。