公开(公告)号：US20190013310A1

公开(公告)日：2019-01-10

申请号：US15883306

申请日：2018-01-30

Applicant: INDIAN INSTITUTE OF SCIENCE

Inventor： Milova PAUL ,  Mayank SHRIVASTAVA ,  B. Sampath KUMAR ,  Christian RUSS ,  Harald GOSSNER

IPC: H01L27/02 ,  H01L29/74 ,  H01L29/78 ,  H01L29/06 ,  H01L29/20

Abstract: The present disclosure relates to a Dual Fin SCR device having two parallel fins on which cathode, anode, n- and p- type triggering taps are selectively doped, wherein one Fin (or group of parallel Fins) comprises anode and n-tap, and other Fin (or group of parallel Fins) comprises cathode and p-tap. As key regions of the proposed SCR (anode and cathode), which carry majority of current after triggering, are placed diagonally, they provide substantial benefit in terms of spreading current and dissipating heat. The proposed SCR ESD protection device helps obtain regenerative feedback between base—collector junctions of two back-to-back bipolar transistors, which enables the proposed SCR to shunt ESD current. The proposed SCR design enables lower trigger and holding voltage for efficient and robust ESD protection. The proposed SCR device/design helps offer a tunable trigger voltage and a holding voltage with highfailure threshold.

公开(公告)号：US20180226317A1

公开(公告)日：2018-08-09

申请号：US15883749

申请日：2018-01-30

Applicant: INDIAN INSTITUTE OF SCIENCE

Inventor： Mayank SHRIVASTAVA ,  Milova PAUL ,  Christian RUSS ,  Harald GOSSNER

IPC: H01L23/367 ,  H01L27/088 ,  H01L29/423 ,  H01L29/06 ,  H01L29/861 ,  H01L29/735 ,  H01L29/74

CPC classification number: H01L23/367 ,  H01L27/0248 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/42356 ,  H01L29/735 ,  H01L29/7436 ,  H01L29/861 ,  H01L29/8613

Abstract: The present disclosure relates to a thermal management solution for ESD protection devices in advanced Fin- and/or Nanowire-based technology nodes, by employing localized nano heat sinks, which enable heat transport from local hot spots to surface of chip, which allows significant reduction in peak temperature for a given ESD current. In an aspect, the proposed semiconductor device can include at least one fin having a source and a drain disposed over a p-well or a n-well in a substrate; an electrically floating dummy metal gate disposed close to drain or hot spot over at least a portion of the at least one fin, and an electrical metal gate is disposed close to the source; and a nano-heat sink operatively coupled with the dummy metal gate and terminating at the surface of chip in which the semiconductor device is configured so as to enable transfer of heat received from the at least one fin through the dummy metal gate to the surface of the chip.

公开(公告)号：US20160370298A1

公开(公告)日：2016-12-22

申请号：US15122170

申请日：2015-02-13

Applicant: INDIAN INSTITUTE OF SCIENCE

Inventor： Siva UMAPATHY ,  Sanchita SIL ,  Gagan DHAL ,  Freek ARIESE

IPC: G01N21/65 ,  G01J3/44 ,  G01B11/00 ,  G01J3/02

CPC classification number: G01N21/65 ,  G01B11/00 ,  G01J3/0221 ,  G01J3/027 ,  G01J3/0289 ,  G01J3/44 ,  G01J3/4412 ,  G01N21/4795 ,  G01N2201/0221 ,  G01N2201/06113 ,  G01N2201/0826 ,  G01N2201/0833

Abstract: The invention provides a method for chemical signature resolved detection of a concealed object within a system. The method includes irradiating the system at a plurality of positions with aplurality of electromagnetic radiation of specific wavelength; capturing a certain component of the scattered electromagnetic radiation from the object at a plurality of locations along various 3D planes around the system; obtaining a plurality of profiles from the captured component of the scattered electromagnetic radiation; filtering the profiles to obtain a chemical signature specific to the object; and resolving the chemical signatures to detect the concealed object, wherein, the step of detection includes determination of the shape, size and location of the object.

Abstract translation: 本发明提供了一种用于系统内隐蔽物体的化学特征解析检测的方法。 该方法包括在多个具有特定波长的电磁辐射的位置照射系统; 在围绕系统的各种3D平面的多个位置处捕获来自物体的散射电磁辐射的某一分量; 从所述散射电磁辐射的拍摄成分获得多个轮廓; 过滤轮廓以获得特定于物体的化学特征; 以及解析所述化学特征以检测所述隐藏对象，其中，所述检测步骤包括确定所述物体的形状，大小和位置。

公开(公告)号：US09054585B2

公开(公告)日：2015-06-09

申请号：US13790075

申请日：2013-03-08

Applicant: Department of Electronics and Information Technology ,  Indian Institute of Science

Inventor： Bharadwaj Amrutur ,  Laxmi Karthikeyan

IPC: H03K17/687 ,  H02M7/217 ,  H02M7/219

CPC classification number: H02M7/217 ,  H02M2007/2195 ,  Y02B70/1408

Abstract: Embodiments of the disclosure relate to a low drop diode equivalent circuit. Piezoelectric device based vibration energy harvesting requires a rectifier for conversion of input ac to usable dc form. Power loss due to diode drop in rectifier is a significant fraction of the already low levels of harvested power. The low-drop-diode equivalent can replace the rectifier diodes and minimize power loss. The diode equivalent mimics a diode using linear region operated MOSFET. The diode equivalent is powered directly from input signal and requires no additional power supply for its control. Power used by the control circuit is kept at a value which gives an overall output power improvement. The diode equivalent replaces the four diodes in a full wave bridge rectifier, which is the basic full-wave rectifier and is a part of the more advanced rectifiers like switch-only and bias-flip rectifiers.

Abstract translation: 本公开的实施例涉及一种低压二极管等效电路。 基于压电器件的振动能量采集需要一个整流器，用于将输入交流转换为可用的直流形式。 整流二极管下降引起的功率损耗已经是已经很低的采集功率水平的很大一部分。 低压二极管等效物可以替代整流二极管并最大限度地减少功率损耗。 二极管等效模拟使用线性区域工作MOSFET的二极管。 二极管等效电源直接由输入信号供电，不需要额外的电源供其控制。 控制电路使用的功率保持在提供总输出功率的值。 二极管等效替代了作为基波全波整流器的全波桥式整流器中的四个二极管，并且是更高级整流器的一部分，如开关式和偏置翻转式整流器。

公开(公告)号：US20040151982A1

公开(公告)日：2004-08-05

申请号：US10355289

申请日：2003-01-31

Applicant: Indian Institute of Science

Inventor： Srinivasarao Shivashankar ,  Ashok Kumar Shukla ,  Anil Uttam Mane ,  Bellie Hariprakash ,  Shaik Abdul Gaffoor

IPC: H01M004/68 ,  H01M004/82 ,  B05D005/12

CPC classification number: H01M4/14 ,  H01M4/16 ,  H01M4/68 ,  H01M4/82 ,  Y10T29/10 ,  Y10T29/49115

Abstract: A precursor chemical compound is applied to a surface sought to be coated, and subjected to a rapid thermally activated chemical reaction process (RTACRP) in which the temperature is quickly raised and lowered. The desired coating is formed from the precursor chemical compound by a chemical reaction at the elevated temperature. The structural/chemical integrity of the surface is preserved due to the use of RTACRP. The approach may be used to manufacture a high-energy density lead-acid battery.

Abstract translation: 将前体化合物施加到欲涂覆的表面上，并进行迅速升高和降低温度的快速热激活化学反应过程（RTACRP）。 所需的涂层由前体化合物通过化学反应在升高的温度下形成。 由于使用RTACRP，表面的结构/化学完整性得以保留。 该方法可用于制造高能量密度铅酸电池。

公开(公告)号：US20030157513A1

公开(公告)日：2003-08-21

申请号：US10230331

申请日：2002-08-29

Applicant: INDIAN INSTITUTE OF SCIENCE

Inventor： Ram Rajasekharan

IPC: C12Q001/68 ,  G01N033/53 ,  C07H021/04 ,  C12N009/10 ,  C12N009/20 ,  C12N001/18 ,  C12P021/02 ,  C12N005/06 ,  A61K048/00

CPC classification number: C12P7/6454 ,  C12N15/52 ,  C12P7/6463

Abstract: This invention describes novel catalytically active cytosolic enzymes for triacylglycerol biosynthesis from eukaryotic systems. The complex from oleaginous yeast was enzymatically characterized, and was found to contain lysophosphatidic acid acyltransferase, phosphatidic acid phosphatase, diacylglycerol acyltransferase, acyl-acyl carrier protein synthetase, superoxide dismutase and acyl carrier protein. The triacylglycerol biosynthetic machinery rapidly incorporates free fatty acids as well as fatty acyl-coenzyme A into triacylglycerol and its biosynthetic intermediates. Lysophosphatidic acid acyltransferase, phosphatidic acid phosphatase and diacylglycerol acyltransferase from the complex were microsequenced. Acyl carrier protein, superoxide dismutase and diacylglycerol acyltransferase genes were cloned and expressed in bacterial system. The soluble triacylglycerol biosynthetic enzymes (lysophosphatidic acid acyltransferase, phosphatidic acid phosphatase, diacylglycerol acyltransferase) in yeast, rat adipocytes and human hepatocyte cell-line (HepG2) exist in the cytosol either as free enzymes or as a multienzyme complex.

Abstract translation: 本发明描述了用于真核系统的三酰基甘油生物合成的新型催化活性细胞溶质酶。 含有酵母的复合物经酶学表征，发现含有溶血磷脂酸酰基转移酶，磷脂酸磷酸酶，二酰基甘油酰基转移酶，酰基酰基载体蛋白合成酶，超氧化物歧化酶和酰基载体蛋白。 三酰基甘油生物合成机械快速将游离脂肪酸以及脂肪酰基辅酶A纳入三酰基甘油及其生物合成中间体。 来自复合物的溶血磷脂酰基转移酶，磷脂酸磷酸酶和二酰基甘油酰基转移酶进行微量测序。 酰基载体蛋白，超氧化物歧化酶和二酰基甘油酰基转移酶基因在细菌系统中克隆并表达。 在酵母，大鼠脂肪细胞和人肝细胞细胞系（HepG2）中的可溶性三酰基甘油生物合成酶（溶血磷脂酸酰基转移酶，磷脂酸酸性磷酸酶，二酰基甘油酰基转移酶）作为游离酶或多酶复合物存在于胞质溶胶中。

公开(公告)号：US20250129304A1

公开(公告)日：2025-04-24

申请号：US18685509

申请日：2022-09-06

Applicant: Indian Institute of Science

Inventor： Srinivasaiah Dasappa ,  Anand Malhar Shivapuji ,  Arvind Gupta

IPC: C10J3/26 ,  C10J3/72

Abstract: Examples of a system (100, 200) and a method (300) for converting a biomass feedstock into a hydrogen rich syngas, are described. The system (100, 200) includes a gasification reactor (102) including an inlet (104) with a lock hopper, an outlet (106), and side walls (108) between the inlet (104) and the outlet (106). The system (100) may further include a plurality of injectors (110, 202) protruding inside the gasification reactor (102) up to a certain depth along the length of the gasification reactor (102). In another example, the plurality of injectors (110, 202) may also be inclined at an angle with respect to the side walls (108) of the gasification reactor (102). The system (100, 200) further comprises a plurality of thermocouples (112) for determining a temperature profile of the gasification reactor (102.

公开(公告)号：US12268676B2

公开(公告)日：2025-04-08

申请号：US17578968

申请日：2022-01-19

Applicant: INDIAN INSTITUTE OF SCIENCE

Inventor： Shashank Tripathi ,  Rohan Narayan ,  Abhijith Biji ,  R. S. Rajmani

IPC: A61K31/4402 ,  A61P31/16

Abstract: The present disclosure provides methods for inhibiting entry of a virus into a host cell using picolinic acid or a salt or derivative thereof. The present disclosure also provides methods for treating or preventing a viral infection in a subject by administering picolinic acid or a salt or derivative thereof. In particular, the methods of the present disclosure are effective for enveloped viruses and syncytium-forming viruses. In some embodiments, the present disclosure provides methods of treating or preventing a SARS CoV-2, Influenza A virus, human parainfluenza virus, herpes simplex virus, Japanese encephalitis virus, Zika virus, or a flavivirus infection.

公开(公告)号：US20250105006A1

公开(公告)日：2025-03-27

申请号：US18730209

申请日：2023-02-01

Applicant: INDIAN INSTITUTE OF SCIENCE EDUCATION AND RESEARCH, PUNE (IISER PUNE)

Inventor： Gokul M. A ,  Atikur RAHMAN

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/30 ,  C23C16/52

Abstract: The present disclosure relates to a process for preparation of reliable conformal growth of transition metal dichalocogenide (TMD) monolayers by using metal silicates as a growth promoter that improves the tolerance of growth of TMD monolayers films while maintaining good optoelectronic properties of the film in atmospheric pressure chemical vapour deposition (APCVD).

公开(公告)号：US20250100977A1

公开(公告)日：2025-03-27

申请号：US18725993

申请日：2022-12-30

Applicant: INDIAN INSTITUTE OF SCIENCE ,  UNIVERSITY OF MYSORE

Inventor： Sathees C RAGHAVAN ,  Ujjayinee RAY ,  Vindya K GOPINATHA ,  Shivangi SHARMA ,  Kempegowda MANTELINGU ,  Kanchugarakoppal S RANGAPPA ,  Laijau GOYARY

IPC: C07D239/56 ,  A61K31/505 ,  A61K31/506 ,  A61K31/513 ,  A61K31/7048 ,  A61P35/00 ,  C07D401/12 ,  C07D403/12 ,  C07D405/12 ,  C07D409/12 ,  C07D417/12

Abstract: The present disclosure provides a compound of Formula I, its stereoisomers, intermediates, and pharmaceutically acceptable salts thereof, capable of inhibiting DNA Ligase IV enzyme activity and nonhomologous end joining (NHEJ). The present disclosure also provides a process for preparing the compounds of Formula I and methods thereof.