公开(公告)号：US20140020835A1

公开(公告)日：2014-01-23

申请号：US13666224

申请日：2012-11-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Shahid Rauf ,  James D. Carducci ,  Douglas A. Buchberger, JR. ,  Ankur Agrawal ,  Jason A. Kenney ,  Leonid Dorf ,  Ajit Balakrishna ,  Richard Fovell

IPC: C23F1/08 ,  C23C14/28

CPC classification number: C23F1/08 ,  B01J12/002 ,  C23C14/28 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32733 ,  H01J37/32834 ,  H05H1/46

Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and a symmetrical chamber exhaust with plural struts through the exhaust region providing access to a confined workplace support. A grid may be included for masking spatial effects of the struts from the processing region.

Abstract translation: 等离子体反应器具有具有对称RF进料的顶置多线圈感应等离子体源和具有穿过排气区域的多个支柱的对称室排气，从而提供对受限制的工作场所支撑件的通路。 可以包括用于屏蔽来自处理区域的支柱的空间效应的网格。

公开(公告)号：US20130277333A1

公开(公告)日：2013-10-24

申请号：US13842287

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Nipun Misra ,  Kartik Ramaswamy ,  Yang Yang ,  Douglas A. Buchberger, JR. ,  James D. Carducci ,  Lawrence Wong ,  Shane C. Nevil ,  Shahid Rauf ,  Kenneth S. Collins

IPC: C23F1/08 ,  C23C16/505

CPC classification number: C23F1/08 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32183

Abstract: In a plasma reactor having a driven electrode and a counter electrode, an impedance controller connected between the counter electrode and ground includes both series sand parallel variable impedance elements that facilitate two-dimensional movement of a ground path input impedance in a complex impedance space to control spatial distribution of a plasma process parameter.

Abstract translation: 在具有驱动电极和对电极的等离子体反应器中，连接在对电极和地之间的阻抗控制器包括两个串联的砂平行的可变阻抗元件，它们促进复阻抗空间中的接地路径输入阻抗的二维运动以控制 等离子体工艺参数的空间分布。

公开(公告)号：US20240011153A1

公开(公告)日：2024-01-11

申请号：US18370750

申请日：2023-09-20

Applicant: APPLIED MATERIALS, INC.

Inventor： James D. Carducci ,  Kenneth S. Collins ,  Kartik Ramaswamy

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/4401 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/4585 ,  C23C16/4586

Abstract: A processing chamber includes a chamber body defining an interior volume and including an access port. A cathode assembly is configured to generate a plasma within the interior volume. A chamber liner includes one or more inner notch structures to engage with one or more components of the chamber body. The chamber liner is configured to move between a loading position and an operation position. When the chamber liner is in the loading position, the interior volume is accessible by the access port. When the chamber liner is in the operation position, the chamber liner at least partially encloses the interior volume.

公开(公告)号：US10580620B2

公开(公告)日：2020-03-03

申请号：US15199068

申请日：2016-06-30

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, Jr. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

IPC: H01J37/32 ,  H05H1/46

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US10535502B2

公开(公告)日：2020-01-14

申请号：US15198969

申请日：2016-06-30

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, Jr. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

IPC: H01J37/32 ,  H05H1/46

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US10510515B2

公开(公告)日：2019-12-17

申请号：US16015074

申请日：2018-06-21

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice ,  Yue Guo

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor, a pump coupled to the plasma chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly comprising a plurality of filaments extending laterally through the plasma chamber, each filament including a conductor surrounded by a cylindrical insulating shell, the plurality of filaments including a first multiplicity of filaments and a second multiplicity of filaments arranged in an alternating pattern with the first multiplicity of filaments, a first bus coupled to the first multiplicity of filaments and a second bus coupled to the second multiplicity of filaments, an RF power source to apply RF signal the intra-chamber electrode assembly, and at least one RF switch configured to controllably electrically couple and decouple the first bus from one of i) ground, ii) the RF power source, or iii) the second bus.

公开(公告)号：US10453656B2

公开(公告)日：2019-10-22

申请号：US15198993

申请日：2016-06-30

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, Jr. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

IPC: H01J37/32 ,  H05H1/46

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US10249495B2

公开(公告)日：2019-04-02

申请号：US15195640

申请日：2016-06-28

Applicant: Applied Materials, Inc.

Inventor： Yang Yang ,  Lucy Chen ,  Jie Zhou ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Srinivas D. Nemani ,  Chentsau Ying ,  Jingjing Liu ,  Steven Lane ,  Gonzalo Monroy ,  James D. Carducci

IPC: C23C16/26 ,  H01L21/033 ,  C23C16/505 ,  C23C16/509 ,  C23C16/56 ,  H01J37/32 ,  H01L21/02 ,  H01L21/308 ,  H01L21/3213 ,  C01B32/25 ,  H01L21/762

Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

公开(公告)号：US20190085467A1

公开(公告)日：2019-03-21

申请号：US16195670

申请日：2018-11-19

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Shahid Rauf ,  James D. Carducci ,  Douglas A. Buchberger, Jr. ,  Ankur Agarwal ,  Jason A. Kenney ,  Leonid Dorf ,  Ajit Balakrishna ,  Richard Fovell

IPC: C23F1/08 ,  H01J37/32 ,  H05H1/46 ,  C23C14/28 ,  B01J12/00

Abstract: A plasma reactor for processing a workpiece includes a reactor chamber having a ceiling and a sidewall and a workpiece support facing the ceiling and defining a processing region, and a pair of concentric independently excited RF coil antennas overlying the ceiling and a side RF coil concentric with the side wall and facing the side wall below the ceiling, and being excited independently.

公开(公告)号：US10170279B2

公开(公告)日：2019-01-01

申请号：US14294431

申请日：2014-06-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Jason A. Kenney ,  James D. Carducci ,  Kenneth S. Collins ,  Richard Fovell ,  Kartik Ramaswamy ,  Shahid Rauf

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32 ,  H05H1/46 ,  C23C16/509

Abstract: A plasma reactor has an overhead multiple coil antennas including a parallel spiral coil antenna and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.