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公开(公告)号：US10035701B2
公开(公告)日：2018-07-31
申请号：US15305799
申请日：2014-11-05
Applicant: ADVANCED SEMICONDUCTOR MANUFACTURING CO. LTD
Inventor： Yuanjun Xu , Yilin Yan , Weijia Xue
CPC classification number: B81B7/02 , B81B2201/0257 , B81B2203/0127 , B81B2203/0315 , B81C1/00158 , B81C1/00396 , B81C2201/0132 , B81C2201/0133 , B81C2201/019 , B81C2201/0198 , B81C2201/053
Abstract: There is provided a method for forming a composite cavity and a composite cavity formed using the method. The method comprises the following steps: providing a silicon substrate (101); forming an oxide layer on the front side thereof; patterning the oxide layer to form one or more grooves (103), the position of the groove (103) corresponding to the position of small cavity (109) to be formed; providing a bonding wafer (104), which is bonded to the patterned oxide layer to form one or more closed micro-cavity structures (105) between the silicon substrate (101) and the bonding wafer (104); forming a protective film (106) over the bonding wafer (104) and forming a masking layer (107) on the back side of the silicon substrate (101); patterning the masking layer (107), the pattern of the masking layer (107) corresponding to the position of a large cavity (108) to be formed; using the masking layer (107) as a mask, etching the silicon substrate (101) from the back side until the oxide layer at the front side thereof to form the large cavity (108) in the silicon substrate (101); and using the masking layer (107) and the oxide layer as a mask, etching the bonding wafer (104) from the back side through the silicon substrate (101) until the protective film (106) thereover to form one or more small cavities (109) in the bonding wafer (104). The uniformity of thickness of the semiconductor medium layer where the small cavity (109) in the composite cavity is located is well controlled by the present invention.
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公开(公告)号：US20180201503A1
公开(公告)日：2018-07-19
申请号：US15923013
申请日：2018-03-16
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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公开(公告)号：US20180201502A1
公开(公告)日：2018-07-19
申请号：US15916962
申请日：2018-03-09
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both metal material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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公开(公告)号：US10017375B2
公开(公告)日：2018-07-10
申请号：US15291142
申请日：2016-10-12
Applicant: Robert Bosch GmbH
Inventor： Frank Reichenbach , Till Schade , Jochen Reinmuth , Philip Kappe , Alexander Ilin , Mawuli Ametowobla , Julia Amthor
CPC classification number: B81B7/0035 , B81B2201/0235 , B81C1/00182 , B81C1/00277 , B81C1/00293 , B81C1/00325 , B81C1/00666 , B81C2201/0132 , B81C2201/0143 , B81C2203/0109 , B81C2203/0145
Abstract: A method is provided for manufacturing a micromechanical component including a substrate and a cap connected to the substrate and together with the substrate enclosing a first cavity, a first pressure prevailing and a first gas mixture with a first chemical composition being enclosed in the first cavity. An access opening, connecting the first cavity to surroundings of the micromechanical component, is formed in the substrate or in the cap. The first pressure and/or the first chemical composition are adjusted in the first cavity. The access opening is sealed by introducing energy and heat into an absorbing part of the substrate or the cap with the aid of a laser. A recess is formed in a surface of the substrate or of the cap facing away from the first cavity in the area of the access opening for reducing local stresses occurring at a sealed access opening.
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公开(公告)号：US09988260B2
公开(公告)日：2018-06-05
申请号：US15142381
申请日：2016-04-29
Applicant: FREESCALE SEMICONDUCTOR, INC.
Inventor： Ruben B. Montez , Arvind S. Salian , Robert F. Steimle
CPC classification number: B81B3/001 , B81B2201/0235 , B81B2203/0315 , B81C1/00976 , B81C2201/0132 , B81C2201/115 , B81C2203/0118
Abstract: A surface of a cavity of a MEMS device that is rough to reduce stiction. In some embodiments, the average roughness (Ra) of the surface is 5 nm or greater. In some embodiments, the rough surface is formed by forming one or more layers of a rough oxidizable material, then oxidizing the material to form an oxide layer with a rough surface. Another layer is formed over the oxide layer with the rough surface, wherein the roughness of the oxide layer is transferred to the another layer.
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Patent Agency Ranking
26.发明申请公开(公告)号：US20180152788A1
公开(公告)日：2018-05-31
申请号：US15636423
申请日：2017-06-28
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Matteo Perletti , Stefano Losa , Lorenzo Tentori , Maria Carolina Turi
CPC classification number: H04R7/18 , B81B3/0054 , B81B2201/0257 , B81B2203/0127 , B81B2203/0307 , B81B2203/0315 , B81C1/00158 , B81C2201/0132 , H04R19/005 , H04R19/04
Abstract: An electroacoustic MEMS transducer, having a substrate of semiconductor material; a through cavity in the substrate; a back plate carried by the substrate through a plate anchoring structure, the back plate having a surface facing the through cavity; a fixed electrode, extending over the surface of the back plate; a membrane of conductive material, having a central portion facing the fixed electrode and a peripheral portion fixed to the surface of the back plate through a membrane anchoring structure; and a chamber between the membrane and the back plate, peripherally delimited by the membrane anchoring structure.
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公开(公告)号：US20180148327A1
公开(公告)日：2018-05-31
申请号：US15456271
申请日：2017-03-10
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Hang CHANG , Jen-Hao LIU , I-Shi WANG
IPC: B81C1/00
CPC classification number: B81C1/00269 , B81C2201/0132 , B81C2203/0118 , B81C2203/0792
Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a recess in a first substrate and forming a dielectric layer on the first substrate and in the recess. The method also includes forming a second substrate on the dielectric layer and etching a portion of the second substrate to form a MEMS structure. The MEMS structure has a plurality of openings. The method further includes etching a portion of the dielectric layer to form a cavity below the openings.
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公开(公告)号：US09981842B2
公开(公告)日：2018-05-29
申请号：US15162988
申请日：2016-05-24
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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公开(公告)号：US09975765B1
公开(公告)日：2018-05-22
申请号：US15381736
申请日：2016-12-16
Inventor： Robert S. Okojie
CPC classification number: B81C1/00595 , B81C2201/0132 , G01L9/0042
Abstract: A process for fabricating relatively thin SiC diaphragms may include fast Reactive Ion Etching (RIE) followed by Dopant Selective Reactive Ion Etching (DSRIE). The process may produce silicon carbide (SiC) diaphragms thinner than 10 microns. These thinner, more sensitive diaphragms may then be used to effectively resolve sub-psi pressures in jet engines, for example.
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公开(公告)号：US09975761B2
公开(公告)日：2018-05-22
申请号：US15444086
申请日：2017-02-27
Applicant: SMARTTIP BV
Inventor： Edin Sarajlic
CPC classification number: B81C1/0015 , A61B5/150022 , A61B5/150282 , A61B5/150396 , A61B5/150511 , A61B5/150519 , A61B5/150984 , A61B5/15142 , A61M37/0015 , B81B2201/057 , B81B2201/12 , B81B2203/0118 , B81B2203/0353 , B81C1/00087 , B81C1/00111 , B81C1/00119 , B81C2201/0132 , B81C2201/0143 , B81C2201/0159 , B81C2201/0198 , C01B21/0687
Abstract: A method of manufacturing a plurality of through-holes in a layer of first material, for example for the manufacturing of a probe comprising a tip containing a channel. To manufacture the through-holes in a batch process, a layer of first material is deposited on a wafer comprising a plurality of pits a second layer is provided on the layer of first material, and the second layer is provided with a plurality of holes at central locations of the pits; using the second layer as a shadow mask when depositing a third layer at an angle, covering a part of the first material with said third material at the central locations, and etching the exposed parts of the first layer using the third layer as a protective layer.
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