公开(公告)号：US20130140976A1

公开(公告)日：2013-06-06

申请号：US13758450

申请日：2013-02-04

Applicant: FUJIKURA LTD.

Inventor： Satoshi YAMAMOTO ,  Tatsuo SUEMASU

IPC: B05D3/06 ,  B05D3/10

CPC classification number: B05D3/06 ,  B01L3/502707 ,  B01L3/502715 ,  B01L2300/0654 ,  B01L2300/0816 ,  B01L2300/0851 ,  B01L2300/0877 ,  B01L2300/168 ,  B01L2400/086 ,  B05D3/10 ,  B81B2201/058 ,  B81B2203/033 ,  B81B2203/0361 ,  B81B2207/056 ,  B81C1/00063 ,  B81C1/00515 ,  B81C2201/0143 ,  G01N21/554 ,  G01N21/6452 ,  G01N21/648

Abstract: A method of manufacturing a microfluidic chip includes: irradiating, with a laser light, an area to be provided with a valley for storing a fluid on a surface of a substrate so as to form a modified region having a periodic pattern formed in a self-organizing manner in a light-collecting area of the laser light, the laser light having a pulse width for which the pulse duration is on the order of picoseconds or less; carrying out an etching treatment on the substrate in which the modified region is formed, removing at least some of the modified portion so as to provide the valley, and forming a periodic structure having a plurality of groove portions along one direction which have a surface profile based on the periodic pattern on at least a bottom surface of the valley; and forming a metal layer that covers the periodic structure of the bottom surface.

Abstract translation: 一种微流体芯片的制造方法，其特征在于，具备：激光照射在基板表面上设置有用于存储流体的谷部的区域，形成具有形成于所述自流体的周期性图案的改质区域， 在激光的聚光区域中组织的方式，具有脉冲宽度大约为皮秒或更小的脉冲宽度的激光; 对其中形成有改质区域的基板进行蚀刻处理，除去至少一部分改性部分以提供谷部，并形成沿着一个方向具有多个凹槽部分的周期性结构，其具有表面轮廓 基于谷的至少底表面上的周期性图案; 并形成覆盖底面的周期性结构的金属层。

公开(公告)号：US20130126022A1

公开(公告)日：2013-05-23

申请号：US13635972

申请日：2011-03-10

Applicant: Christian Schoen ,  Michael Wagner

Inventor： Christian Schoen ,  Michael Wagner

IPC: B01J4/00

CPC classification number: B01J4/001 ,  B01L3/502707 ,  B01L3/502738 ,  B01L3/502746 ,  B01L2200/0621 ,  B01L2200/10 ,  B01L2300/0636 ,  B01L2300/0681 ,  B01L2300/0816 ,  B01L2300/0822 ,  B01L2300/0864 ,  B01L2300/0887 ,  B01L2300/161 ,  B01L2400/0406 ,  B01L2400/0688 ,  B01L2400/088 ,  B81C1/00047 ,  B81C1/00063 ,  B81C2201/0105 ,  B81C2201/0143 ,  B81C2201/0156 ,  Y10T137/85938

Abstract: The invention relates to a component (4) of a biosensor, comprising at least one first device (6) for receiving a sample liquid, wherein the device (6) is connected via a distributor channel (7) to further receiving devices (8 to 11), into each of which a feed channel (71, 72, 73, 74) branching off from the distributor channel (7) opens, and the feed channels (71, 72, 73, 74) are arranged in succession in flow direction (S) of the sample liquid passed on through the distributor channel (7). In accordance with the invention, it is envisaged that, in the distributor channel (7), in each case between two immediately successive feed channels (71, 72; 72, 73; 73, 74) in flow direction (S), at least one region (K) for at least temporary slowing or stoppage of the capillary flow of the sample liquid has been inserted. It is thus possible to control the capillary flow of the sample liquid such that always only one receiving device (8, 9, 10, 11) is filled with the volume flow of sample liquid available before the next is filled, and effectively simultaneous filling of the receiving devices (8, 9, 10, 11) is prevented. This leads to rapid and complete filling of the respective receiving device (8, 9, 10, 11). Additionally presented is a process with which the regions (K) can be inserted into the distributor channel (7) in a simple manner.

Abstract translation: 本发明涉及生物传感器的组件（4），其包括用于接收样品液体的至少一个第一装置（6），其中所述装置（6）经由分配器通道（7）连接到另外的接收装置（8至 其中，从分配器通道（7）分支出的进料通道（71,72,73,74）打开，并且进料通道（71,72,73,74）在流动方向上连续地排列 （S）通过分配器通道（7）通过的样品液体。 根据本发明，设想在分配器通道（7）中，在每种情况下，在流动方向（S）处的两个紧邻的供给通道（71,72; 72,73; 73,74）之间至少 已经插入了用于至少暂时放慢或停止样品液体的毛细管流动的区域（K）。 因此，可以控制样品液体的毛细管流动，使得总是只有一个接收装置（8,9,10,11）填充下一个填充之前可用的样品液体的体积流量，并且有效地同时填充 接收装置（8,9,10,11）被防止。 这导致相应的接收装置（8,9,10,11）的快速和完全的填充。 另外提出了一种可以简单地将区域（K）插入到分配器通道（7）中的过程。

公开(公告)号：US08368155B2

公开(公告)日：2013-02-05

申请号：US12869597

申请日：2010-08-26

Applicant: Margaret H. Abraham ,  David P. Taylor

Inventor： Margaret H. Abraham ,  David P. Taylor

IPC: H01L23/20

CPC classification number: H01L21/30604 ,  B81C1/00047 ,  B81C1/00547 ,  B81C2201/0143 ,  B82Y30/00

Abstract: Systems and methods for preparing freestanding films using laser-assisted chemical etch (LACE), and freestanding films formed using same, are provided. In accordance with one aspect a substrate has a surface and a portion defining an isotropically defined cavity; and a substantially continuous film is disposed at the substrate surface and spans the isotropically defined cavity. In accordance with another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a film is disposed at the substrate surface and spans the isotropically defined cavity, the film including at least one of hafnium oxide (HfO2), diamond-like carbon, graphene, and silicon carbide (SiC) of a predetermined phase. In accordance with still another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a multi-layer film is disposed at the substrate surface and spans the isotropically defined cavity.

Abstract translation: 提供了使用激光辅助化学蚀刻（LACE）制备独立膜的系统和方法，以及使用其形成的独立膜。 根据一个方面，衬底具有限定各向同性定义的空腔的表面和部分; 并且基本上连续的膜设置在基底表面并跨越各向同性地限定的腔。 根据另一方面，一种衬底具有限定各向同性定义的空腔的表面和一部分; 并且膜被设置在基板表面并跨越各向同性地限定的空腔，所述膜包括预定相的氧化铪（HfO 2），类金刚石碳，石墨烯和碳化硅（SiC）中的至少一种。 根据另一方面，一种基板具有限定各向同性定义的空腔的表面和一部分; 并且多层膜设置在基板表面并跨越各向同性定义的空腔。

公开(公告)号：US08324024B2

公开(公告)日：2012-12-04

申请号：US11911085

申请日：2006-04-10

Applicant: Juergen Leib ,  Dietrich Mund

Inventor： Juergen Leib ,  Dietrich Mund

IPC: H01L21/00

CPC classification number: H01L27/14687 ,  B81C1/00333 ,  B81C1/00873 ,  B81C2201/0143 ,  H01L23/057 ,  H01L23/08 ,  H01L23/10 ,  H01L27/14618 ,  H01L27/14632 ,  H01L31/0203 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2924/00

Abstract: The invention relates to a method for production of packaged electronic, in particular optoelectronic, components in a composite wafer, in which the packaging is carried out by fitting microframe structures of a cover substrate composed of glass, and the composite wafer is broken up along trenches which are produced in the cover substrate, and to packaged electronic components which can be produced using this method, comprising a composite of a mount substrate and a cover substrate, with at least one functional element and at least one bonding element, which makes contact with the functional element, being arranged on the mount substrate, with the cover substrate being a microstructured glass which is arranged on the mount substrate, and forms a cavity above the functional element, and with the bonding elements being located outside the cavity.

Abstract translation: 本发明涉及一种用于生产复合晶片中的电子封装，特别是光电子元件的方法，其中通过安装由玻璃构成的覆盖基板的微框架结构来进行封装，并且复合晶片沿着沟槽分解 并且可以使用这种方法制造的包装电子部件，其包括安装基板和盖基板的复合物，至少一个功能元件和至少一个接合元件，其与 所述功能元件布置在所述安装基板上，所述盖基板是布置在所述安装基板上的微结构玻璃，并且在所述功能元件上方形成空腔，并且所述接合元件位于所述空腔外部。

公开(公告)号：US07760435B2

公开(公告)日：2010-07-20

申请号：US11816804

申请日：2005-02-21

Applicant: Massimo Tormen ,  Alessandro Carpentiero ,  Enzo Mario Di Fabrizio

Inventor： Massimo Tormen ,  Alessandro Carpentiero ,  Enzo Mario Di Fabrizio

IPC: G02B27/10 ,  B29D11/00 ,  C03C15/00

CPC classification number: B81C99/009 ,  B81B2207/056 ,  B81C99/0085 ,  B81C2201/0132 ,  B81C2201/0143 ,  B82Y20/00 ,  G02B3/0012

Abstract: A method is for forming three-dimensional micro- and nanostructures, based on the structuring of a body of material by a mould having an impression area which reproduces the three-dimensional structure in negative form. This method includes providing a mould having a substrate of a material which can undergo isotropic chemical etching, in which the impression area is to be formed. An etching pattern is defined on (in) the substrate, having etching areas having zero-, uni- or bidimensional extension, which can be reached by an etching agent. A process of isotropic chemical etching of the substrate from the etching areas is carried out for a corresponding predetermined time, so as to produce cavities which in combination make up the impression area. The method is advantageously used in the fabrication of sets of microlenses with a convex three-dimensional structure, of the refractive or hybrid refractive/diffractive type, for forming images on different focal planes.

Abstract translation: 一种用于形成三维微结构和纳米结构的方法，其基于通过具有以负形式再现三维结构的印模区域的模具构造材料体。 该方法包括提供具有能够进行各向同性化学蚀刻的材料的基材的模具，其中将形成印模区域。 蚀刻图案被定义在衬底的（在）中，其蚀刻区域具有零，一维或二维延伸，这可由蚀刻剂达到。 从蚀刻区域对基板进行各向同性化学蚀刻的过程进行相应的预定时间，以产生组合构成印模区域的空腔。 该方法有利地用于制造具有折射或混合折射/衍射类型的凸立体结构的微透镜组，用于在不同焦平面上形成图像。

公开(公告)号：US07759609B2

公开(公告)日：2010-07-20

申请号：US10547798

申请日：2004-03-04

Applicant: Micha Asscher ,  Gabriel Kerner

Inventor： Micha Asscher ,  Gabriel Kerner

IPC: G03F7/00 ,  B82B3/00

CPC classification number: G03F7/2051 ,  B23K2103/14 ,  B41M5/24 ,  B81C1/00031 ,  B81C2201/0109 ,  B81C2201/0143 ,  B81C2201/0159 ,  H01L21/0272 ,  H01L21/32131 ,  H01L21/76838 ,  H05K3/027 ,  H05K3/048

Abstract: A method for forming a micro- or nano-pattern of a material on a substrate is presented. The method utilizes a buffer layer assisted laser patterning (BLALP). A layered structure is formed on the substrate, this layered structure being in the form of spaced-apart regions of the substrate defined by the pattern to be formed, each region including a weakly physisorbed buffer layer and a layer of the material to be patterned on top of the buffer layer. A thermal process is then applied to the layered structure to remove the remaining buffer layer in said regions, and thus form a stable pattern of said material on the substrate resulting from the buffer layer assisted laser patterning. The method may utilize either positive or negative lithography. The patterning may be implemented using irradiation with a single uniform laser pulse via a standard mask used for optical lithography.

Abstract translation: 提出了在衬底上形成材料的微观或纳米图案的方法。 该方法利用缓冲层辅助激光图案化（BLALP）。 在基板上形成层状结构，该分层结构是由要形成的图案限定的基板的间隔开的区域的形式，每个区域包括弱物理缓冲层和待图案化的材料层 缓冲层顶部。 然后将热处理施加到层状结构以去除所述区域中的剩余缓冲层，从而由缓冲层辅助激光图案化形成在衬底上的所述材料的稳定图案。 该方法可以利用正光刻或负光刻。 可以通过使用用于光学光刻的标准掩模的单个均匀激光脉冲的照射来实现图案化。

公开(公告)号：US20090261464A1

公开(公告)日：2009-10-22

申请号：US12204296

申请日：2008-09-04

Applicant: Susan Alie

Inventor： Susan Alie

IPC: H01L21/322 ,  H01L23/02

CPC classification number: H01L23/26 ,  B81C1/00285 ,  B81C2201/0143 ,  H01L2224/16 ,  H01L2924/1461 ,  H01L2924/00

Abstract: The present disclosure relates to methods of treating a silicon substrate with an ultra-fast laser to create a getter material for example in a substantially enclosed MEMS package. In an embodiment, the laser treating comprises irradiating the silicon surface with a plurality of laser pulses adding gettering microstructure to the treated surface. Semiconductor based packaged devices, e.g. MEMS, are given as examples hereof.

Abstract translation: 本公开涉及用超快速激光处理硅衬底以产生例如在基本封闭的MEMS封装中的吸气材料的方法。 在一个实施例中，激光处理包括用多个激光脉冲对硅表面照射，以将吸收微结构加到被处理的表面上。 基于半导体的封装器件，例如 MEMS作为示例。

公开(公告)号：US07419917B2

公开(公告)日：2008-09-02

申请号：US11504466

申请日：2006-08-15

Applicant: Margaret H. Abraham

Inventor： Margaret H. Abraham

IPC: H01L21/31

CPC classification number: H01L21/31116 ,  B81C1/00484 ,  B81C2201/0132 ,  B81C2201/0143 ,  H01L21/26533

Abstract: A method is used for producing nanoscale and microscale devices in a variety of materials, such as silicon dioxide patterned buried films. The method is inexpensive and reliable for making small scale mechanical, optical, or electrical devices and relies upon the implantation of ions into a substrate and subsequent annealing to form a stoichiometric film with the device geometry is defined by the implant energy and dose and so is not limited by the usual process parameters.

Abstract translation: 一种方法用于生产各种材料中的纳米级和微量元件，例如二氧化硅图案化的掩膜。 该方法对于制造小规模机械，光学或电气装置而言是便宜且可靠的，并且依赖于将离子注入衬底并随后退火以形成化学计量膜，其中器件几何形状由注入能量和剂量限定，因此 不受通常工艺参数的限制。

公开(公告)号：US07118657B2

公开(公告)日：2006-10-10

申请号：US10695381

申请日：2003-10-28

Applicant: Jene A. Golovchenko ,  Derek M. Stein ,  Jiali Li

Inventor： Jene A. Golovchenko ,  Derek M. Stein ,  Jiali Li

IPC: C32C14/34

CPC classification number: B81C1/00626 ,  B01L3/5027 ,  B24B37/013 ,  B81C99/004 ,  B81C2201/0143 ,  G01N33/48721 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: For controlling a physical dimension of a solid state structural feature, a solid state structure is provided, having a surface and having a structural feature. The structure is exposed to a first periodic flux of ions having a first exposure duty cycle characterized by a first ion exposure duration and a first nonexposure duration for the first duty cycle, and then at a second periodic flux of ions having a second exposure duty cycle characterized by a second ion exposure duration and a second nonexposure duration that is greater than the first nonexposure duration, for the second duty cycle, to cause transport, within the structure including the structure surface, of material of the structure to the structural feature in response to the ion flux exposure to change at least one physical dimension of the feature substantially by locally adding material of the structure to the feature.

Abstract translation: 为了控制固态结构特征的物理尺寸，提供具有表面并具有结构特征的固态结构。 该结构暴露于具有第一曝光占空比的第一周期性通量的离子，其特征在于第一占空比的第一离子曝光持续时间和第一非曝光持续时间，然后在具有第二曝光占空比的第二周期通量的离子 其特征在于，对于所述第二占空比，所述第二离子曝光持续时间和第二非曝光持续时间大于所述第一非曝光持续时间，以使所述结构的材料在所述结构的结构体内包括所述结构表面在所述结构特征中的响应 到离子通量暴露基本上通过将结构的材料局部添加到特征来改变特征的至少一个物理尺寸。

公开(公告)号：US20050211922A1

公开(公告)日：2005-09-29

申请号：US11086492

申请日：2005-03-22

Applicant: Masanao Munekane ,  Kouji Iwasaki

Inventor： Masanao Munekane ,  Kouji Iwasaki

IPC: B81C99/00 ,  A61N5/00 ,  B82B3/00 ,  G21G5/00 ,  H01J37/30 ,  H01J37/31 ,  H01J37/317

CPC classification number: H01J37/20 ,  B23K15/08 ,  B23P15/32 ,  B81C99/0095 ,  B81C2201/0143 ,  H01J37/3056 ,  H01J37/31 ,  H01J2237/20214 ,  H01J2237/206 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/3174

Abstract: A structure having arbitrary rotational symmetry is produced by attaching a sample stage (turntable) to a precision rotational shaft that is continuously rotated as high precision, performing FIB deposition inside an FIB chamber while causing continuous rotation of the sample stage, or performing cut-way processing from a side surface or upper surface, like a general purpose lathe, using FIB etching.

Abstract translation: 具有任意旋转对称性的结构通过将样品台（转盘）附接到精度高的连续旋转的精密旋转轴上，在FIB室内进行FIB沉积，同时使样品台连续旋转，或进行切割 使用FIB蚀刻从侧表面或上表面加工，如通用车床。