公开(公告)号：US20060163489A1

公开(公告)日：2006-07-27

申请号：US11044659

申请日：2005-01-27

Applicant: Russell Low ,  Eric Cobb ,  Joseph Olson ,  Leo Klos

Inventor： Russell Low ,  Eric Cobb ,  Joseph Olson ,  Leo Klos

IPC: H01J27/00

CPC classification number: H01J27/08

Abstract: An ion implanter has a source arc chamber including a conductive end wall at a repeller end of the arc chamber, the end wall having a central portion surrounding an opening. A ceramic insulator is secured to an outer surface of the end wall, such as by peripheral screw threads engaging mating threads at the periphery of a recessed area of the end wall. A conductive repeller has a narrow shaft secured to the insulator and extending through the end wall opening, and a body disposed within the source arc chamber adjacent to the end wall. The end wall, insulator and repeller are configured to form a continuous vacuum gap between the central portion of the end wall and (i) the repeller body, (ii) the repeller shaft, and (iii) the insulator. The insulator interior surface can have a ridged cross section.

Abstract translation: 离子注入机具有源电弧室，该电弧室包括在电弧室的排斥端处的导电端壁，端壁具有围绕开口的中心部分。 陶瓷绝缘体固定在端壁的外表面上，例如通过外周螺纹与端壁的凹陷区域的周边处的配合螺纹啮合。 导电排斥器具有固定到绝缘体并延伸通过端壁开口的窄轴，以及设置在源弧室内与主体壁相邻的主体。 端壁，绝缘体和推斥器构造成在端壁的中心部分与（i）推斥体之间形成连续的真空间隙，（ii）推斥轴，和（iii）绝缘体。 绝缘体内表面可以具有脊状横截面。

公开(公告)号：US20060060797A1

公开(公告)日：2006-03-23

申请号：US11227511

申请日：2005-09-15

Applicant: Ui-hui Kwon ,  Gyeong-su Keum ,  Won-young Chung ,  Kwang-ho Cha ,  Young-tae Kim ,  Seung-ki Chae ,  Jai-hyung Won ,  Young-kwan Park ,  Tai-kyung Kim

Inventor： Ui-hui Kwon ,  Gyeong-su Keum ,  Won-young Chung ,  Kwang-ho Cha ,  Young-tae Kim ,  Seung-ki Chae ,  Jai-hyung Won ,  Young-kwan Park ,  Tai-kyung Kim

IPC: H01J37/08

CPC classification number: H01J37/08 ,  H01J27/08 ,  H01J2237/082 ,  H01J2237/31703

Abstract: The present invention can provide ion implanter devices including an arc chamber including at least a first inner region and a second inner region, an electron emitting device disposed in the arc chamber adjacent the first inner region and adapted to emit electrons, an electron returning device disposed in the arc chamber adjacent the second inner region and adapted to return at least some of the electrons emitted from the electron emitting device into the second inner region; and an electric field and magnetic field generating device adapted to provide a magnetic field to the arc chamber, wherein at least one inner wall of the arc chamber has a convex surface.

Abstract translation: 本发明可以提供包括至少包括第一内部区域和第二内部区域的电弧室的离子注入机装置，设置在与第一内部区域相邻并适于发射电子的电弧室中的电子发射装置，设置电子返回装置 在所述电弧室中与所述第二内部区域相邻并且适于将从所述电子发射器件发射的至少一些电子返回到所述第二内部区域; 以及适于向所述电弧室提供磁场的电场和磁场产生装置，其中所述电弧室的至少一个内壁具有凸形表面。

公开(公告)号：US20050211923A1

公开(公告)日：2005-09-29

申请号：US10857449

申请日：2004-06-01

Applicant: Peter Banks

Inventor： Peter Banks

IPC: H01J27/08 ,  H01J37/08 ,  H01J37/32

CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J2237/31701

Abstract: The invention relates to methods of controlling the effect of ions of an ionisable source gas that can react with interior surfaces of an arc chamber, by introducing ions of a displacement gas into the arc chamber, where the displacement gas ions are more chemically reactive with the material of the interior surfaces than the ions of the source gas. The source gas ions may typically be oxygen ions and the displacement gas ions are then typically fluorine ions where the interior surfaces comprise tungsten. The fluorine ions may, by way of example, be sourced from fluorine, silicon tetrafluoride or nitrogen trifluoride.

Abstract translation: 本发明涉及通过将置换气体的离子引入电弧室来控制可与电弧室的内表面反应的可离子化源气体的离子的影响的方法，其中置换气体离子与 内表面的材料比源气体的离子。 源气体离子通常可以是氧离子，而置换气体离子通常是氟离子，其中内表面包括钨。 例如，氟离子可以来自氟，四氟化硅或三氟化氮。

公开(公告)号：US06878946B2

公开(公告)日：2005-04-12

申请号：US10259827

申请日：2002-09-30

Applicant: Marvin Farley ,  Takao Sakase ,  Shu Satoh ,  Geoffrey Ryding ,  Peter Rose ,  Christos Christou

Inventor： Marvin Farley ,  Takao Sakase ,  Shu Satoh ,  Geoffrey Ryding ,  Peter Rose ,  Christos Christou

IPC: H01J27/00 ,  H01J37/08

CPC classification number: H01J37/08 ,  H01J1/20 ,  H01J1/26 ,  H01J27/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/082

Abstract: An indirectly heated button cathode for use in the ion source of an ion implanter has a button member formed of a slug piece mounted in a collar piece. The slug piece is thermally insulated from the collar piece to enable it to operate at a higher temperature so that electron emission is enhanced and concentrated over the surface of the slug piece. The slug piece and collar piece can be both of tungsten. Instead the slug piece may be of tantalum to provide a lower thermionic work function. The resultant concentrated plasma in the ion source is effective to enhance the production of higher charge state ions, particularly P+++ for subsequent acceleration for high energy implantation.

Abstract translation: 用于离子注入机的离子源的间接加热纽扣阴极具有由安装在轴环件中的塞片形成的纽扣件。 芯块与套环件绝热，使其能够在更高的温度下工作，从而使电子发射增强并集中在芯块的表面上。 lug lug piece piece piece。。。。。。。。。。 替代地，块塞可以是钽以提供较低的热离子功能。 在离子源中产生的浓缩等离子体有效地增强高电荷状态离子的产生，特别是用于高能量注入的后续加速的P +++。

公开(公告)号：US06847043B2

公开(公告)日：2005-01-25

申请号：US10334136

申请日：2002-12-31

Applicant: Adrian John Murrell ,  Richard David Goldberg ,  Christopher J. S. Burgess ,  David George Armour ,  Erik J. H. Collart

Inventor： Adrian John Murrell ,  Richard David Goldberg ,  Christopher J. S. Burgess ,  David George Armour ,  Erik J. H. Collart

IPC: H01J1/20 ,  H01J1/46 ,  H01J27/08 ,  H01J27/14 ,  H01J27/20 ,  H01J37/08 ,  H01J37/317 ,  H05H1/24

CPC classification number: H01J27/08 ,  H01J37/08

Abstract: The invention relates to improving the efficiency of ion flow from an ion source, by reducing heat loss from the source both in the ion chamber of the ion source and its constituent parts (e.g. the electron source). This is achieved by lining the interior of the ion chamber and/or the exterior with heat reflective and/or heat insulating material and by formation of an indirectly heated cathode tube such that heat transfer along the tube and away from the ion chamber is restricted by the formation of slits in the tube. Efficiency of the ion source is further enhanced by impregnating and/or coating the front plate of the ion chamber with a material which comprises an element or compound thereof, the ions of which element are the same specie as those to be implanted into the substrate from the source thereof.

Abstract translation: 本发明涉及通过在离子源的离子室和其组成部分（例如电子源）中减少来自源的热损失来提高离子源的离子流的效率。 这是通过用热反射和/或绝热材料衬里离子室和/或外部的内部并通过形成间接加热的阴极管来实现的，使得沿着管并离开离子室的热传递被 在管中形成狭缝。 通过用包含元素或其化合物的材料浸渍和/或涂覆离子室的前板来进一步提高离子源的效率，其中元素的离子与将被植入到基底中的元素的离子相同 其来源。

公开(公告)号：US06515426B1

公开(公告)日：2003-02-04

申请号：US09458512

申请日：1999-12-13

Applicant: Shigeru Tanaka ,  Isao Hashimoto

Inventor： Shigeru Tanaka ,  Isao Hashimoto

IPC: H01J2702

CPC classification number: H01J37/317 ,  H01J27/08 ,  H01J2237/0041 ,  H01J2237/04756 ,  H01J2237/08

Abstract: An ion beam processing apparatus and a method of operating an ion source therefore are provided for reducing the frequency of breakdown due to particles, and for increasing the time that an apparatus can be made available by operating the apparatus in a stable state for a long time and minimizing maintenance operations such as cleaning. A plasma generating gas is introduced into a vacuum chamber formed of a processing chamber and an ion source mounted thereto to produce a plasma from the gas, and an electric field is applied within the vacuum chamber to extract ions within the plasma as an ion beam. The ion source comprises an arc power supply, an acceleration power supply for applying a positive potential to the acceleration electrode in order to extract an ion beam, and a deceleration power supply for applying a negative potential to the deceleration electrode ion order to prevent ions from flowing into the ion source. When the ion source is operated, the acceleration electrode is first applied with the positive potential, and then the deceleration electrode is applied with the negative potential.

Abstract translation: 因此，提供离子束处理装置和操作离子源的方法，用于减少由于颗粒引起的击穿频率，并且为了通过长时间在稳定状态下操作装置来增加设备可用的时间 并尽量减少维护操作，如清洁。 将等离子体产生气体引入到由处理室形成的真空室和安装在其上的离子源，以从气体产生等离子体，并且在真空室内施加电场以提取等离子体内的离子作为离子束。 离子源包括电弧电源，用于向加速电极施加正电位以提取离子束的加速电源，以及用于向减速电极离子顺序施加负电位的减速电源，以防止离子 流入离子源。 当离子源运行时，首先施加正电位的加速电极，然后减速电极施加负电位。

公开(公告)号：US20020036461A1

公开(公告)日：2002-03-28

申请号：US09999109

申请日：2001-10-31

Applicant: Osram Sylvania Inc.

Inventor： Karl H. Schoenbach ,  Wojciech W. Byszewski ,  Frank E. Peterkin ,  Amin N. Dharami

IPC: H01J001/62

CPC classification number: H01J3/025 ,  H01J1/025 ,  H01J3/04 ,  H01J17/04 ,  H01J17/06 ,  H01J27/08 ,  H01J61/067 ,  H01J61/09 ,  H01J61/12 ,  H01J61/305 ,  H01J61/66 ,  H01J61/72 ,  H01J61/78 ,  H01S3/03 ,  H01S3/0382 ,  H01S3/0385 ,  H01S3/2383

Abstract: A discharge device for operation in a gas at a prescribed pressure includes a cathode having a plurality of micro hollows therein, and an anode spaced from the cathode. Each of the micro hollows has dimensions selected to produce a micro hollow discharge at the prescribed pressure. Preferably, each of the micro hollows has a cross-sectional dimension that is on the order of the mean free path of electrons in the gas. Electrical energy is coupled to the cathode and the anode at a voltage and current for producing micro hollow discharges in each of the micro hollows in the cathode. The discharge device may include a discharge chamber for maintaining the prescribed pressure. A dielectric layer may be disposed on the cathode when the spacing between the cathode and the anode is greater than about the mean free path of electrons in the gas. Applications of the discharge device include fluorescent lamps, excimer lamps, flat fluorescent light sources, miniature gas lasers, electron sources and ion sources.

公开(公告)号：US06348764B1

公开(公告)日：2002-02-19

申请号：US09641263

申请日：2000-08-17

Applicant: Ming-Chung Chen ,  Yun-Chin Kuo

Inventor： Ming-Chung Chen ,  Yun-Chin Kuo

IPC: H01J724

CPC classification number: H01J27/08

Abstract: An indirect hot cathode ion source for use in an ion implanter is disclosed. The ion source can be constructed by a chamber formed of two endwalls, two sidewalls, a top and a bottom wall defining a cavity therein for producing plasma ions. An opening, or a slit through one sidewall of the chamber, is used for ejecting the plasma ions therethrough. Inside the ion source chamber, an anode, or an anti-cathode, is positioned in close proximity to a first endwall of the chamber, while a cathode is positioned in close proximity to a second endwall of the chamber opposing the first endwall. The cathode is constructed by a filament for passing an electrical current therethrough, and a filament shield of cylindrical shape surrounding the filament spaced apart from an inner periphery of an opening in the second endwall. The inner periphery of the opening in the second endwall is provided with a torroidal-shaped recess in and along an inner periphery of the opening adjacent to the cavity of the chamber such that deposition of materials on the inner periphery of the opening and electrical shorting or arcing with the filament shield can be avoided.

Abstract translation: 公开了一种用于离子注入机的间接热阴极离子源。 离子源可以由由两个端壁，两个侧壁，在其中限定空腔的顶壁和底壁形成的室构成，用于产生等离子体离子。 通过室的一个侧壁的开口或狭缝用于通过其中喷射等离子体离子。 在离子源室内部，阳极或反阴极被定位成紧邻腔室的第一端壁，而阴极定位成与第一端壁相对的第二端壁靠近。 阴极由用于使电流通过的灯丝构成，圆筒形灯丝屏蔽围绕灯丝与第二端壁中的开口的内周隔开间隔开。 在第二端壁中的开口的内周边处设置有环形凹部，并且沿邻近腔的空腔的开口的内周沿着开口部的内周边的材料的沉积，电气短路或 可以避免与灯丝屏蔽的电弧。

公开(公告)号：US06300636B1

公开(公告)日：2001-10-09

申请号：US09410899

申请日：1999-10-02

Applicant: Kuo-Pin Shih ,  Wen-Lung Ho

Inventor： Kuo-Pin Shih ,  Wen-Lung Ho

IPC: H01J2700

CPC classification number: H01J27/08

Abstract: An improved ion source head for use with an ion implantation machine includes an arc chamber within which a heated filament creates an ion plasma from a source gas. The source gas is introduced into the chamber evenly through at least four, but preferably six through hole openings in a bottom liner in the chamber. Even distribution of the gas entering the chamber reduces build-up and flaking of material in the chamber that can result in short circuits.

Abstract translation: 用于离子注入机的改进的离子源头包括电弧室，其中加热的细丝在其中产生源气体的离子等离子体。 源气体通过室中的底部衬垫中的至少四个，但优选六个通孔开口均匀地引入室中。 进入腔室的气体的均匀分布减少了室内材料的堆积和剥落，这可能导致短路。

公开(公告)号：US06285025B1

公开(公告)日：2001-09-04

申请号：US09155336

申请日：1998-09-24

Applicant: Alexander Metel ,  Sergei Grigoriev

Inventor： Alexander Metel ,  Sergei Grigoriev

IPC: H01S100

CPC classification number: H05H3/02 ,  H01J27/08

Abstract: A source of fast neutral molecules comprises a gas discharge chamber (1) with an anode (5), a cathode (7) and a gas discharge power supply (8), a charge transfer chamber (2) with additional electrodes (16), an accelerating grid (3) composed of grid elements (18) isolated electrically from each other and an accelerating voltage power supply (4). The width of the accelerating grid (3) exceeds within the ion-producing gas pressure range the ion charge transfer length L=1/n&sgr;, n being gas molecule density and &sgr; being charge transfer collision cross-section. The negative pole of the accelerating voltage power supply (4) is connected through a resistor (11) to the charge transfer chamber (2), through resistors (17) to the additional electrodes (16) and through resistors (19) to the grid elements (18). This simplifies control of the device, increases its reliability and makes arc cathode spots resulting from electrical break-downs appear only on the accelerating grid ((3) thus excluding damage of the products under treatment and improving their quality.

Abstract translation: 快中性分子的源包括具有阳极（5），阴极（7）和气体放电电源（8）的气体放电室（1），具有附加电极（16）的电荷转移室（2） 由栅极元件（18）彼此电隔离的加速栅格（3）和加速电压电源（4）组成。 加速栅格（3）的宽度超过离子产生气体压力范围，离子电荷转移长度L = 1 / nsigma，n为气体分子密度，σ为电荷转移碰撞截面。 加速电压电源（4）的负极通过电阻器（11）连接到电荷转移室（2），通过电阻器（17）连接到附加电极（16）并通过电阻器（19）连接到电网 元素（18）。 这简化了设备的控制，提高了其可靠性，并使得电气故障导致的电弧阴极只出现在加速电网（3）上，从而排除了处理中的产品损坏并提高了其质量。