公开(公告)号：US20230317437A1

公开(公告)日：2023-10-05

申请号：US18329791

申请日：2023-06-06

Applicant: Lam Research Corporation

Inventor： John Stephen DREWERY ,  Tom A. KAMP ,  Haoquan YAN ,  John Edward DAUGHERTY ,  Ali Sucipto TAN ,  Ming-Kuei TSENG ,  Bruce Edmund FREEMAN

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  C23C16/02 ,  C23C16/455 ,  C23C16/44

CPC classification number: H01J37/32862 ,  H01J37/32834 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/0228 ,  H01L21/67069 ,  C23C16/0236 ,  C23C16/45544 ,  C23C16/4405 ,  H01J37/32449 ,  H01L21/02164 ,  H01J2237/3341 ,  H01J2237/3321 ,  H01J2237/186 ,  H01J2237/1825 ,  H01L21/6833

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

公开(公告)号：US20230317411A1

公开(公告)日：2023-10-05

申请号：US17693409

申请日：2022-03-13

Applicant: Applied Materials, Inc.

Inventor： Abdul Aziz Khaja ,  Juan Carlos Rocha-Alvarez

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32183 ,  H01J37/32357 ,  H01J37/32862 ,  H01J2237/332 ,  H01J2237/334

Abstract: A radio frequency (RF) source may be used to generate a capacitively coupled plasma to perform a plasma-based process on a substrate in a plasma processing chamber. A controller may cause the RF source and a switching element to route an RF signal to electrodes in the pedestal that generate the plasma in the processing chamber as part of a recipe performed on a substrate during etch or deposition processes. Between processes, the controller may cause the same RF source to generate a second RF signal that is instead routed by the switching element to inductive coils to generate an inductively coupled plasma for a cleaning process to remove film deposits on the interior of the plasma processing chamber.

公开(公告)号：US20230304150A1

公开(公告)日：2023-09-28

申请号：US18203853

申请日：2023-05-31

Applicant: Applied Materials, Inc.

Inventor： Patrick Tae

IPC: C23C16/44 ,  H01L21/67 ,  G01N21/55 ,  H01J37/32 ,  C23C16/455

CPC classification number: C23C16/4405 ,  H01L21/67017 ,  G01N21/55 ,  H01J37/32862 ,  H01J37/32972 ,  C23C16/45536

Abstract: A method includes receiving light, by a light coupling device and along an optical path, reflected back from a reflector mounted on a liner of a processing chamber. The method further includes detecting, by a spectrometer within the received light, a first spectrum representative of a deposited film layer on the reflector. The method further includes aligning, using an alignment device, the light coupling device in two dimensions with reference to the reflector along the optical path until maximization of the light received by the light coupling device.

公开(公告)号：US20230298870A1

公开(公告)日：2023-09-21

申请号：US18324688

申请日：2023-05-26

Applicant: Applied Materials, Inc.

Inventor： Fei Wu ,  Abdul Aziz Khaja ,  Sungwon Ha ,  Ganesh Balasubramanian ,  Vinay Prabhakar

IPC: H01J37/32

CPC classification number: H01J37/32871 ,  H01J37/32862 ,  H01J2237/335

Abstract: Exemplary processing methods may include forming a plasma of a cleaning precursor in a remote region of a semiconductor processing chamber. The methods may include flowing plasma effluents of the cleaning precursor into a processing region of the semiconductor processing chamber. The methods may include contacting a substrate support with the plasma effluents for a first period of time. The methods may include lowering the substrate support from a first position to a second position while continuing to flow plasma effluents of the cleaning precursor. The methods may include cleaning the processing region of the semiconductor processing chamber for a second period of time.

公开(公告)号：US20230298863A1

公开(公告)日：2023-09-21

申请号：US17931230

申请日：2022-09-12

Applicant: Kioxia Corporation

Inventor： Yusuke KASAHARA

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32449 ,  H01J37/32522 ,  H01J37/32862 ,  H01L21/3065 ,  H01J2237/002 ,  H01J2237/3341

Abstract: A semiconductor manufacturing apparatus of embodiments includes: a chamber including a top plate and a sidewall; a holder provided in the chamber holding a substrate; a first high frequency power supply applying high frequency power to the holder or the top plate; a second high frequency power supply applying high frequency power to the holder; a third high frequency power supply applying high frequency power to the top plate; a gas supply pipe supplying a gas to the chamber; and a gas discharge pipe discharging a gas from the chamber.

公开(公告)号：US11742214B2

公开(公告)日：2023-08-29

申请号：US15443578

申请日：2017-02-27

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Junya Sasaki ,  Masahiro Sumiya

IPC: H01L21/67 ,  H01L21/3213 ,  C23C16/46 ,  C23C16/50 ,  C23C16/44 ,  H01L21/02 ,  H01J37/32

CPC classification number: H01L21/32136 ,  C23C16/4405 ,  C23C16/463 ,  C23C16/50 ,  H01J37/32862 ,  H01L21/02071 ,  H01L21/67023 ,  H01L21/67069

Abstract: The present invention provides a plasma processing method for subjecting a sample on which a metal element-containing film is disposed to plasma etching in a processing chamber. The method comprises: subjecting an inside of the processing chamber to plasma cleaning using a boron element-containing gas; removing the boron element using plasma after the plasma cleaning; subjecting the inside of the processing chamber to plasma cleaning using a fluorine element-containing gas after removing the boron element; depositing a deposited film in the processing chamber by plasma using a silicon element-containing gas after the plasma cleaning using the fluorine element-containing gas; and subjecting the sample to plasma etching after depositing the deposited film.

公开(公告)号：US20230245861A1

公开(公告)日：2023-08-03

申请号：US18002922

申请日：2021-08-17

Applicant: NP Holdings Co., Ltd.

Inventor： Dai Kyu CHOI

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32513 ,  H01J37/32522 ,  H01J37/32357 ,  H01J37/32862 ,  H01J37/32871 ,  H01J2237/3321 ,  H01J2237/24585 ,  H01J2237/002 ,  H01J37/321 ,  H01J2237/024

Abstract: Disclosed is a plasma generating device which includes a reactor body having a gas injection hole on one side thereof, and a collector connected to an opposite side of the reactor body and having a collection space in an interior thereof. The reactor body and the collector provide a reaction space having a plasma channel in an interior thereof.

公开(公告)号：US20230215697A1

公开(公告)日：2023-07-06

申请号：US18092362

申请日：2023-01-02

Applicant: ASM IP Holding B.V.

Inventor： Ping Ren

IPC: H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/32899 ,  H01J37/32862 ,  H01J37/32449 ,  H01J2237/332

Abstract: A substrate processing apparatus is disclosed. Exemplary substrate processing apparatus includes a plurality of reaction chambers; a shared remote plasma unit; a plurality of first cleaning gas lines configured to fluidly couple the shared remote plasma unit to the reaction chambers; and a cleaning gas source to provide the shared remote plasma unit with a cleaning gas; wherein each of the first cleaning gas lines is provided with a valve and is connected to a sidewall of the reaction chamber.

公开(公告)号：US11682544B2

公开(公告)日：2023-06-20

申请号：US17076639

申请日：2020-10-21

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Satish Radhakrishnan ,  Diwakar Kedlaya ,  Fang Ruan ,  Amit Bansal

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  H01J37/32715

Abstract: Semiconductor processing systems according to embodiments of the present technology may include a chamber body having sidewalls and a base. The chamber body may define an internal volume. The systems may include a substrate support assembly having a shaft and a platen coupled with the shaft along a first surface of the platen. The semiconductor processing systems may include a cover plate positioned on the platen of the substrate support assembly along a second surface of the platen opposite the first surface. The cover plate may include a flange extending about an exterior region of the cover plate. The flange may be in direct contact with the platen. The cover plate may include an upper wall vertically offset from the flange. An interior volume may be defined between the upper wall and the platen of the substrate support assembly.

公开(公告)号：US20230173558A1

公开(公告)日：2023-06-08

申请号：US18104522

申请日：2023-02-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takamitsu TAKAYAMA ,  Junichi SASAKI

IPC: B08B7/00 ,  H01J37/32

CPC classification number: B08B7/0035 ,  H01J37/32715 ,  H01J37/32862 ,  H01J2237/20235

Abstract: A method of cleaning a stage in a plasma processing apparatus including the stage on which a substrate is placed, a lifting mechanism configured to raise and lower the substrate with respect to the stage, and a high-frequency power supply connected to the stage, includes: separating the stage and the substrate from each other using the lifting mechanism; and after the separating the stage and the substrate from each other, removing a deposit deposited on the stage with plasma generated by supplying a high-frequency power from the high-frequency power supply to the stage. In the separating the stage and the substrate from each other, a separation distance between the stage and the substrate is set such that a combined impedance formed around an outer peripheral portion of the stage is lower than a combined impedance formed immediately above a central portion of the stage.