MULTILAYER, THERMALLY-STABILIZED SUBSTRATE STRUCTURES
    27.
    发明申请
    MULTILAYER, THERMALLY-STABILIZED SUBSTRATE STRUCTURES 审中-公开
    多层,热稳定基板结构

    公开(公告)号:US20090141456A1

    公开(公告)日:2009-06-04

    申请号:US11948338

    申请日:2007-11-30

    Applicant: Gregg T. Juett

    Inventor: Gregg T. Juett

    Abstract: A multilayer, thermally-stabilized substrate, including: a thermally-conductive core structure, including a central section located horizontally between two edge sections; a top multilayer circuit board connected to the top surface of the central portion of the core structure; and a bottom multilayer circuit board connected to the bottom surface of the central portion of the core structure. The core structure has a core thermal conductance and a effective core horizontal thermal expansion coefficient. The top and bottom multilayer circuit boards each include at least one dielectric layer and at least one electrically-conductive layer, and each have a circuit board thermal conductance that is less than the core thermal conductance of the core structure. The electrically-conductive layers of the top and the bottom circuit boards each have a conductive layer horizontal thermal expansion coefficient that is less than or equal to the effective core horizontal thermal expansion coefficient of the core structure.

    Abstract translation: 一种多层热稳定基板,包括:导热芯结构,包括水平位于两个边缘部分之间的中心部分; 连接到所述芯结构的中心部分的顶表面的顶部多层电路板; 以及连接到芯结构的中心部分的底表面的底部多层电路板。 核心结构具有核心导热性和有效的核心水平热膨胀系数。 顶部和底部多层电路板各自包括至少一个电介质层和至少一个导电层,并且每个电路板的电导率小于芯结构的芯热导率。 顶部和底部电路板的导电层各自具有小于或等于芯结构的有效芯水平热膨胀系数的导电层水平热膨胀系数。

    HYBRID STRUCTURE OF MULTI-LAYER SUBSTRATES AND MANUFACTURE METHOD THEREOF
    30.
    发明申请
    HYBRID STRUCTURE OF MULTI-LAYER SUBSTRATES AND MANUFACTURE METHOD THEREOF 有权
    多层基板的混合结构及其制造方法

    公开(公告)号:US20080138575A1

    公开(公告)日:2008-06-12

    申请号:US11856858

    申请日:2007-09-18

    Inventor: Chih-kuang Yang

    Abstract: A hybrid structure of multi-layer substrates comprises a first multi-layer substrate and a second multi-layer substrate. The first multi-layer substrate stacks up first metal layers, first dielectric layers alternately and has VIAs. A border district of a first metal layer connects with a border district of the corresponding first dielectric layer. The border districts are separated from adjacent first metal layers and adjacent first dielectric layers. The second multi-layer substrate stacks up second metal layers and second dielectric layers alternately. A border district of a second metal layer connects with a border district of the corresponding second dielectric layer. The border districts are separated from adjacent second metal layers and adjacent second dielectric layers. The VIAs are located at the border districts of the first dielectric layers and each VIA has electric conductor therein to connect one first metal layer with one second metal layer.

    Abstract translation: 多层基板的混合结构包括第一多层基板和第二多层基板。 第一多层基板交替地堆叠第一金属层,第一介电层并具有VIA。 第一金属层的边界区域与相应的第一介电层的边界区域连接。 边界区域与相邻的第一金属层和相邻的第一介电层分离。 第二多层基板交替堆叠第二金属层和第二电介质层。 第二金属层的边界区域与相应的第二电介质层的边界区域连接。 边界区域与相邻的第二金属层和相邻的第二介电层分离。 VIA位于第一电介质层的边界区,并且每个VIA具有导电体,以将一个第一金属层与一个第二金属层连接。

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