Abstract:
A method for removing an undesirable material from an electronic or electrical component and introducing a desirable material in place of the undesirable material. The method can include the replacement of a leaded material found on the component with a no-lead material to meet governmental directives including those of the European Union.
Abstract:
In a connecting structure in which a press-fit terminal 1 is inserted in a press-fitted condition in a through hole 3 in a board 2, a terminal plating layer 4 is formed at least on a board insertion portion of the press-fit terminal 1, and a through hole plating layer 5 is formed at least on a press-fit terminal contacting portion of the through hole 3. A combination of metals having high mutual solubility are selected respectively as a metal forming the terminal plating layer 4 and a metal forming the through hole plating layer 5.
Abstract:
An interconnection apparatus and a method of forming an interconnection apparatus. Contact structures are attached to or formed on a first substrate. The first substrate is attached to a second substrate, which is larger than the first substrate. Multiple such first substrates may be attached to the second substrate in order to create an array of contact structures. Each contact structure may be elongate and resilient and may comprise a core that is over coated with a material that imparts desired structural properties to the contact structure.
Abstract:
Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies with a circuit board or the like having a plurality of terminals disposed on a surface thereof. Subsequently, the semiconductor dies may be singulated from the semiconductor wafer, whereupon the same resilient contact structures can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements of the present invention as the resilient contact structures, burn-in can be performed at temperatures of at least 150° C., and can be completed in less than 60 minutes.
Abstract:
According to one aspect of the invention, an electronic assembly is provided. The electronic assembly includes a first substrate having an integrated circuit formed therein and a second substrate. The first and second substrates are interconnected by a plurality of bi-material interconnects that are electrically connected to the integrated circuit and have a first component comprising a conductive first material with a first coefficient of thermal expansion and a second component comprising a second material with a second coefficient of thermal expansion. The first and second components are connected and shaped such that when the temperature of the bi-material interconnects changes the interconnects each bend towards the first or second component. When the temperature of the second substrate increases, the second substrate expands away from a central portion thereof. The bi-material interconnects are arranged such that the bi-material interconnects bend away from the central portion of the second substrate.
Abstract:
A surface of an external electrode 3 of an electronic part 4 is formed with a coating containing resin ingredient. Thereby, adhesion strength and reliability may be significantly improved in mounting an electronic part onto a circuit board 1 through the medium of a conductive adhesive. Further, it will be able to mount an electronic part to an element to be mounted by utilizing a conductive adhesive forming an external electrode 3 as a connecting element.Further, surface roughness (Ra) of an external electrode 3 of an electronic part is set to 0.1 μm or more and to 10.0 μm or less and preferably to 1.0 μm or more and to 5.0 μm or less. Thereby, adhesion strength with a conductive adhesive may be significantly enhanced in comparison with a conventional electronic part presented.
Abstract:
The present invention is a an effective thermal barrier between the thermistor and higher temperature solids or electrical components in a thermostat or its equivalent device. The invention thermal barrier substantially reduces or essentially eliminates undesired conductive heating of the thermistor from support means or other electrical components.
Abstract:
Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies with a circuit board or the like having a plurality of terminals disposed on a surface thereof. Subsequently, the semiconductor dies may be singulated from the semiconductor wafer, whereupon the same resilient contact structures can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements of the present invention as the resilient contact structures, burn-in can be performed at temperatures of at least 150° C., and can be completed in less than 60 minutes.
Abstract:
According to one aspect of the invention, an electronic assembly is provided. The electronic assembly includes a first substrate having an integrated circuit formed therein and a second substrate. The first and second substrates are interconnected by a plurality of bi-material interconnects that are electrically connected to the integrated circuit and have a first component comprising a conductive first material with a first coefficient of thermal expansion and a second component comprising a second material with a second coefficient of thermal expansion. The first and second components are connected and shaped such that when the temperature of the bi-material interconnects changes the interconnects each bend towards the first or second component. When the temperature of the second substrate increases, the second substrate expands away from a central portion thereof. The bi-material interconnects are arranged such that the bi-material interconnects bend away from the central portion of the second substrate.
Abstract:
Provided are a bonded structure by a lead-free solder and an electronic article comprising the bonded structure. The bonded structure has a stable bonding interface with respect to a change in process of time, an enough strength and resistance to occurrence of whiskers while keeping good wettability of the solder. In the bonded structure, a lead-free Sn—Ag—Bi alloy solder is applied to an electrode through an Sn—Bi alloy layer. The Sn—Bi alloy, preferably, comprises 1 to 20 wt % Bi in order to obtain good wettability of the solder. In order to obtain desirable bonding characteristics having higher reliability in the invention, a copper layer is provided under the Sn—Bi alloy layer thereby obtaining an enough bonding strength.