公开(公告)号：US08957441B2

公开(公告)日：2015-02-17

申请号：US13292045

申请日：2011-11-08

Applicant: Dong Suk Jun ,  Kwang-Yong Kang ,  Sungil Kim ,  Mun Cheol Paek ,  Han-Cheol Ryu ,  Min Hwan Kwak ,  Seung Beom Kang

Inventor： Dong Suk Jun ,  Kwang-Yong Kang ,  Sungil Kim ,  Mun Cheol Paek ,  Han-Cheol Ryu ,  Min Hwan Kwak ,  Seung Beom Kang

IPC: H01L33/58 ,  H01L33/30 ,  H01Q19/06 ,  G01J3/10 ,  G01J3/42 ,  H01Q9/28 ,  H01Q15/00 ,  H01Q15/08

CPC classification number: H01Q19/062 ,  G01J3/10 ,  G01J3/42 ,  H01Q9/285 ,  H01Q15/0086 ,  H01Q15/08

Abstract: The exemplary embodiments of the present invention include forming a photoconductor thin film on a front surface of a substrate; forming a photoconductor thin film pattern by patterning the photoconductor thin film; and forming a metal electrode on the photoconductor thin film pattern.

Abstract translation: 本发明的示例性实施例包括在基板的前表面上形成感光体薄膜; 通过图案化感光体薄膜形成感光体薄膜图案; 并在感光体薄膜图案上形成金属电极。

公开(公告)号：US20150041656A1

公开(公告)日：2015-02-12

申请号：US13963933

申请日：2013-08-09

Applicant: Vlad Novotny ,  Sandeep Gulati ,  Thomas George ,  Timothy Ruchti ,  Alan Abul-Haj ,  Kevin H. Hazen

Inventor： Vlad Novotny ,  Sandeep Gulati ,  Thomas George ,  Timothy Ruchti ,  Alan Abul-Haj ,  Kevin H. Hazen

IPC: G01J3/42 ,  A61B5/145 ,  A61B5/1455

CPC classification number: G01J3/42 ,  A61B5/0022 ,  A61B5/1079 ,  A61B5/14532 ,  A61B5/1455 ,  A61B5/14552 ,  A61B5/6801 ,  G01N21/474 ,  G01N2021/4742 ,  G01N2021/4747 ,  G01N2201/0826

Abstract: A noninvasive analyzer apparatus and method of use thereof is described using a plurality of time resolved sample illumination zones coupled to at least one two-dimensional detector array monitoring a plurality of detection zones. Control of illumination times and/or patterns along with selected detection zones yields pathlength resolved groups of spectra. Sectioned pixels and/or zones of the detector are optionally filtered for different light throughput as a function of wavelength. The pathlength resolved groups of spectra are subsequently analyzed to determine an analyte property. Optionally, in the mapping and/or collection phase, incident light is controllably varied in time in terms of any of: sample probe position, incident light solid angle, incident light angle, depth of focus, energy, intensity, and/or detection angle. Optionally, one or more physiological property and/or model property related to a physiological property is used in the analyte property determination.

Abstract translation: 使用耦合到监视多个检测区域的至少一个二维检测器阵列的多个时分解样本照明区域来描述非侵入性分析仪装置及其使用方法。 照射时间和/或图案与所选检测区域的控制产生光程长度解析组。 选择性地检测检测器的截面像素和/或区域作为波长的函数的不同光通量。 随后分析路径长度解析的光谱组以确定分析物质。 可选地，在映射和/或收集阶段，入射光可以根据以下任何方式在时间上可控地变化：样本探针位置，入射光立体角，入射光角，焦深，能量，强度和/或检测角 。 任选地，在分析物质性测定中使用与生理特性相关的一种或多种生理特性和/或模型性质。

公开(公告)号：US20150020878A1

公开(公告)日：2015-01-22

申请号：US14148641

申请日：2014-01-06

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Soo-Youn Park ,  Sang-Hyun Eom ,  Do-Young Park ,  Hye-Jin Park ,  Sung-Su Kim ,  Chun-Gyoo Lee ,  Jong-Hwan Park ,  Ji-Won Lee

IPC: H01L31/0216 ,  G01J3/42

CPC classification number: H01L31/02168 ,  C08G77/14 ,  C09D5/006 ,  C09D183/04 ,  C09D183/06 ,  G01J3/42 ,  H02S40/20 ,  Y02E10/50

Abstract: An anti-reflective coating film is formed from a coating solution composition that includes a silane-based precursor. When measured via Fourier Transform Infrared (FT-IR) Spectroscopy using a wavelength of 1064 nm, the coating solution composition exhibits a peak intensity ratio IB/IA and a peak intensity ratio IC/IA of equal to or greater than 0.47, respectively. The peak intensity IB is in a range of about 930 cm−1 to about 960 cm−1, the peak intensity IA is in a range of about 1110 cm−1 to about 1130 cm−1, and the peak intensity IC is in a range of about 1020 cm−1 to about 1050 cm−1. A solar cell including the anti-reflective coating film, and a method of predicting the strength of the anti-reflective coating film for the solar cell have been disclosed.

Abstract translation: 防反射涂膜由包含硅烷类前体的涂布液组合物形成。 当使用波长为1064nm的傅里叶变换红外（FT-IR）光谱测量时，涂布溶液组合物分别表现出峰值强度比IB / IA和峰值强度比IC / IA等于或大于0.47。 峰强度1B在约930cm -1至约960cm -1的范围内，峰强度IA在约1110cm -1至约1130cm -1的范围内，峰强度IC为 范围为约1020cm -1至约1050cm -1。 已经公开了包括抗反射涂膜的太阳能电池，以及预测太阳能电池用抗反射涂膜的强度的方法。

公开(公告)号：US20150017887A1

公开(公告)日：2015-01-15

申请号：US14327522

申请日：2014-07-09

Applicant: EBARA CORPORATION

Inventor： Yoichi KOBAYASHI ,  Katsuhide WATANABE ,  Yoichi SHIOKAWA ,  Keita YAGI ,  Masaki KINOSHITA

IPC: B24B37/013 ,  G01J3/42 ,  G01B11/06

CPC classification number: B24B37/013 ,  G01B11/0625 ,  G01B11/0683 ,  G01B11/0691

Abstract: A polishing apparatus capable of achieving a highly-precise polishing result is disclosed. The polishing apparatus includes an in-line film-thickness measuring device configured to measure a film thickness of the substrate in a stationary state, and an in-situ spectral film-thickness monitor having a film thickness sensor disposed in a polishing table, the in-situ spectral film-thickness monitor being configured to subtract an initial film thickness, measured by the in-situ spectral film-thickness monitor before polishing of the substrate, from an initial film thickness, measured by the in-line film-thickness measuring device before polishing of the substrate, to determine a correction value, add the correction value to a film thickness that is measured when the substrate is being polished to obtain a monitoring film thickness, and monitor a progress of polishing of the substrate based on the monitoring film thickness.

Abstract translation: 公开了一种能够实现高精度抛光结果的抛光装置。 抛光装置包括：在静止状态下测量基板的膜厚的直列式膜厚测量装置，以及设置在抛光台中的具有膜厚度传感器的原位光谱膜厚监视器， - 平面光谱膜厚度监视器被配置为从由在线膜厚测量装置测量的初始膜厚度减去由基板抛光之前的原位光谱膜厚度监测器测量的初始膜厚度 在对基板进行研磨之前，为了确定修正值，将修正值与基板正在研磨时测定的膜厚相加，得到监视膜厚，并根据监视膜监视基板的研磨进度 厚度。

公开(公告)号：US08927382B2

公开(公告)日：2015-01-06

申请号：US13342304

申请日：2012-01-03

Applicant: Toshihiko Ouchi

Inventor： Toshihiko Ouchi

IPC: H01L21/331 ,  H01L21/8222 ,  H01L31/101 ,  G01J3/02 ,  G01J3/42 ,  G01N21/35 ,  H01L31/0224 ,  H01L31/0232

CPC classification number: H01L31/09 ,  G01J3/0256 ,  G01J3/42 ,  G01N21/3581 ,  H01L31/022408 ,  H01L31/0232 ,  H01L31/02325 ,  H01L31/101 ,  H01L33/36 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

Abstract: A method of manufacturing a photo-semiconductor device that has a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a first semiconductor substrate different from the second substrate, the second substrate being also provided with electrodes, and the electrodes of the second substrate and the electrodes of the photoconductive semiconductor film being held in contact with each other.

Abstract translation: 一种制造光电半导体器件的方法，其具有设置有电极并形成在第二衬底上的光导半导体膜，所述半导体膜通过在与第二衬底不同的第一半导体衬底上外延生长而形成，第二衬底也被设置 具有电极，并且第二基板的电极和光电导半导体膜的电极保持彼此接触。

公开(公告)号：US08808628B2

公开(公告)日：2014-08-19

申请号：US10592055

申请日：2005-03-10

Applicant: Kenkoh Hanamatsu ,  Hiroyuki Ono ,  Hideo Odagiri ,  Takahiro Sawa ,  Katsuyuki Miura

Inventor： Kenkoh Hanamatsu ,  Hiroyuki Ono ,  Hideo Odagiri ,  Takahiro Sawa ,  Katsuyuki Miura

IPC: G01N21/00 ,  G01N21/47 ,  G01J3/02 ,  G01N21/35 ,  G01N33/02 ,  G01G19/414 ,  G01J3/42 ,  G01J3/12 ,  G01J3/10 ,  G01N21/15

CPC classification number: G01N21/4738 ,  G01G19/4146 ,  G01J3/02 ,  G01J3/021 ,  G01J3/0232 ,  G01J3/0264 ,  G01J3/027 ,  G01J3/108 ,  G01J3/1256 ,  G01J3/42 ,  G01N21/3563 ,  G01N21/359 ,  G01N33/02 ,  G01N2021/151 ,  G01N2201/0618 ,  G01N2201/067 ,  G01N2201/0696 ,  G01N2201/1293

Abstract: A device for measuring calories of food items includes a food item holding unit on which an inspection-target food item including a plurality of food materials is placed, a light source for radiating near-infrared rays at a specific wavelength region to the food item, and a light reception unit that receives light emitted from the light source and then reflected from the food item. The light receiving device receives light reflected from the food item when the near-infrared rays at the specific wavelength are radiated to the food item. A control unit calculates calories of the food item in accordance with measurement values of absorbances of the near-infrared rays at the specific wavelength region which are received by the light reception unit.

Abstract translation: 一种用于测量食物卡路里的装置包括：食物容纳单元，在其上放置包括多种食物的检查目标食品，用于将特定波长区域的近红外线辐射到食品的光源; 以及光接收单元，其接收从光源发射的光，然后从食品反射。 当特定波长的近红外线辐射到食品时，光接收装置接收从食品反射的光。 控制单元根据由光接收单元接收的特定波长区域处的近红外线的吸光度的测量值来计算食物的卡路里。

公开(公告)号：US20140218731A1

公开(公告)日：2014-08-07

申请号：US14348514

申请日：2012-09-06

Applicant: Anton Schick

Inventor： Anton Schick

IPC: G01J3/28 ,  G01J3/10 ,  G01J3/42

CPC classification number: G01J3/2823 ,  G01J3/10 ,  G01J3/2803 ,  G01J3/42 ,  G01J2003/425

Abstract: A broadband light source is provided for a confocal spectrometer having a first aperture device with a first slit grid of a main slit direction arranged in front of the light source to produce a slit-shaped pattern of the light source. A first imaging optical unit focuses the slit-shaped pattern of the light source on an object to be imaged. A detector system has a detector apparatus that captures the light reflected by the object for generating a spectrally resolved image of the object. A second imaging optical unit focuses the reflected light onto the detector apparatus. A dispersion element, arranged in front of the second imaging optical unit, spectrally disperses the light reflected by the object along a dispersion axis perpendicular to the optical axis of the second imaging optical unit.

Abstract translation: 提供了一种用于共焦光谱仪的宽带光源，其具有第一孔径装置，其具有布置在光源前方的主狭缝方向的第一狭缝网格，以产生光源的狭缝状图案。 第一成像光学单元将光源的狭缝状图案聚焦在待成像的物体上。 检测器系统具有捕获由对象反射的光以产生对象的光谱分辨图像的检测器装置。 第二成像光学单元将反射光聚焦到检测器装置上。 布置在第二成像光学单元前面的色散元件沿着垂直于第二成像光学单元的光轴的色散轴光谱地分散由物体反射的光。

公开(公告)号：US20140117239A1

公开(公告)日：2014-05-01

申请号：US14129625

申请日：2012-06-27

Applicant: Shiho Sakai ,  Tomohiro Fukuma

Inventor： Shiho Sakai ,  Tomohiro Fukuma

IPC: G01J3/42

CPC classification number: G01J3/42 ,  G01J3/06 ,  G01N21/359 ,  G01N21/94

Abstract: Provided are a drug detection device and a drug detection method that are able to compute the residual amount of a drug quickly and in a contactless manner. The drug detection device according to the present invention is for detecting a drug remaining in a target area, and includes an irradiation unit configured to irradiate a target area with a light beam including near-infrared light, a spectroscope on which reflected light from the target area is incident, a near-infrared imaging unit configured to capture a spectrum obtained through dispersion of the reflected light by the spectroscope and to generate image data, a control unit configured to process the image data, and a storage unit configured to store an equation expressing a relationship between a prescribed amount of a drug and spectral data that is based on the spectrum. The near-infrared imaging unit is configured to capture each spectrum of a predetermined number of pixels allocated within the target area, and the control unit is configured to compute average spectral data of the area by averaging the spectrums of the pixels, and to compute an amount of the drug corresponding to the average spectral data, based on the equation stored in the storage unit.

Abstract translation: 本发明提供能够快速，无接触地计算药物残留量的药物检测装置和药物检测方法。 根据本发明的药物检测装置用于检测目标区域中剩余的药物，并且包括被配置为用包含近红外光的光束照射目标区域的照射单元，其中来自目标的反射光的分光器 区域是入射的，近红外成像单元，被配置为捕获通过所述分光器的反射光的分散而获得的光谱，并生成图像数据;被配置为处理所述图像数据的控制单元;以及存储单元， 表达规定量的药物与基于光谱的光谱数据之间的关系。 近红外成像单元被配置为捕获在目标区域内分配的预定数量的像素的每个频谱，并且控制单元被配置为通过对像素的频谱进行平均来计算该区域的平均频谱数据，并且计算 根据存储在存储单元中的方程，对应于平均光谱数据的药物量。

公开(公告)号：US20140055783A1

公开(公告)日：2014-02-27

申请号：US13975413

申请日：2013-08-26

Applicant: Covalent Materials Corporation

Inventor： Yoshihata YANASE ,  Hiroshi Shirai ,  Jun Komiyama ,  Hiroshi Oishi

IPC: G01J3/42

CPC classification number: G01J3/42 ,  G01N21/33 ,  G01N21/3563 ,  G01N21/55 ,  G01N2021/3568

Abstract: A method of analyzing a nitride semiconductor layer in which a mixing ratio at a ternary mixed-crystal nitride semiconductor layer can be analyzed non-destructively, simply, and precisely, even its surface is covered with a cap layer is provided. The nitride semiconductor layer having an AN layer or a BN layer with a thickness of 0.5 to 10 nm that is stacked on an AxB1-xN layer (A and B: 13 group elements, 0≦x≦1) is subjected to reflection spectroscopy to obtain a reflection spectrum of the AxB1-xN layer. Let an energy value in a peak position of the reflection spectrum be a band gap energy Egap, and let a band gap energy value of AxB1-xN (x=1) be EA and a band gap energy value of AxB1-xN (x=0) be EB, x is calculated from Equation Egap=(1−x)EB+xEA−bx(1−x) (where b is bowing parameter corresponding to A and B).

Abstract translation: 提供了分析氮化物半导体层的方法，其中可以非破坏性地，简单地且精确地，甚至其表面被覆盖层覆盖三元混合氮化物半导体层的混合比。 叠层在AxB1-xN层（A和B：13组元素，0 @ x @）上的具有厚度为0.5至10nm的AN层或BN层的氮化物半导体层经受反射光谱法 获得AxB1-xN层的反射光谱。 使反射光谱的峰值位置的能量值为带隙能量Egap，使AxB1-xN（x = 1）的带隙能量值为EA，将AxB1-xN的带隙能量值（x = 0）为EB，x由等式Egap =（1-x）EB + xEA-bx（1-x）（其中b是对应于A和B的弯曲参数）计算。

公开(公告)号：US20140033797A1

公开(公告)日：2014-02-06

申请号：US14111974

申请日：2012-04-13

Applicant: Jordi Veirman ,  Sebastien Dubois ,  Nicolas Enjalbert

Inventor： Jordi Veirman ,  Sebastien Dubois ,  Nicolas Enjalbert

IPC: G01N27/12 ,  G01J3/42

CPC classification number: G01N27/041 ,  G01J3/42 ,  G01N27/125 ,  H01L21/3225 ,  H01L22/12

Abstract: A method for determining the interstitial oxygen concentration of a sample made from a p-doped semiconductor material includes a step of heat treatment of the sample in order to form thermal donors, determining the duration of the heat treatment required to obtain a compensated semiconductor material, determining the thermal donors concentration in the sample of compensated semiconductor material, from the charge carriers concentration, and determining the oxygen concentration from the thermal donors of and the duration of the heat treatment.

Abstract translation: 用于确定由p掺杂半导体材料制成的样品的间隙氧浓度的方法包括热处理样品以形成热供体的步骤，确定获得补偿的半导体材料所需的热处理的持续时间， 从载流子浓度确定补偿半导体材料的样品中的供体浓度，以及确定来自热供体的氧浓度和热处理的持续时间。