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公开(公告)号：US20230420484A1
公开(公告)日：2023-12-28
申请号：US18465733
申请日：2023-09-12
Applicant: EPISTAR CORPORATION
Inventor： Min Hsun HSIEH , Hsin-Mao LIU
CPC classification number: H01L27/156 , H01L27/15 , G09G3/32 , H01L33/486 , H01L33/507 , H01L33/56 , H01L33/62 , H01L33/385
Abstract: A light-emitting module including a first optoelectronic unit having a first electrode pad and a second electrode pad, a second optoelectronic unit having a third electrode pad and a fourth electrode pad, a first supporting structure enclosing the first optoelectronic unit and the second optoelectronic unit, a first pin overlapping and confronted with both of the first electrode pad and the third electrode pad, a second pin overlapping the second electrode pad and the first supporting structure, and a third pin overlapping the fourth electrode pad and physically separated from the second pin.
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公开(公告)号：US11852302B2
公开(公告)日：2023-12-26
申请号：US17653842
申请日：2022-03-07
Applicant: EPISTAR CORPORATION
Inventor： Wei-Chiang Hu , Keng-Chuan Chang , Chiu-Lin Yao , Chun-Wei Lin , Jung-Chang Sun
IPC: F21K9/23 , F21K9/00 , F21V19/00 , F21Y105/10 , F21Y115/10
CPC classification number: F21K9/23 , F21K9/00 , F21V19/001 , F21V19/0005 , F21Y2105/10 , F21Y2115/10
Abstract: A light-emitting unit, having a substrate; a first light-emitting body formed on the substrate, and having a first longer side and a first shorter side; a second light-emitting body formed on the substrate, and having a second longer side and a second shorter side which is parallel to the first longer side; a third light-emitting body formed on the substrate, having a third longer side and a third shorter side which is parallel to the first longer side, and electrically connected to the first light-emitting body and the second light-emitting body; a first electrode covering the first light-emitting body and the second light-emitting body, and electrically connecting to the first light-emitting body; a second electrode separated from the first electrode, and covering the second light-emitting body without covering the first light-emitting body; and a transparent element enclosing the first light-emitting body, the second light-emitting body, and the third light-emitting body.
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公开(公告)号：US20230369540A1
公开(公告)日：2023-11-16
申请号：US18196015
申请日：2023-05-11
Applicant: EPISTAR CORPORATION
Inventor： Feng-Wen HUANG
IPC: H01L33/24
Abstract: A semiconductor stack includes a first-type semiconductor layer, a second-type semiconductor layer, an active region located between the first-type semiconductor layer and the second-type semiconductor layer, one or multiple recesses, and a recess-induced layer located between the first-type semiconductor layer and the active region. The active region has a first thickness and includes an upper surface and a lower surface closer to the first-type semiconductor layer than the upper surface. Each recess includes a bottom disposed in the active region. A first distance is from the bottom of the recess to the lower surface. The first distance is 0.5-0.9 times the first thickness.
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公开(公告)号：US20230317912A1
公开(公告)日：2023-10-05
申请号：US18330562
申请日：2023-06-07
Applicant: EPISTAR CORPORATION
Inventor： Jhih Yong YANG , Hsin Ying WANG , De Shan KUO
CPC classification number: H01L33/62 , H01L33/20 , H01L2933/0066
Abstract: A light-emitting diode, includes a semiconductor stack, including a first semiconductor layer, an active region and a second semiconductor layer; a transparent conductive layer formed on the semiconductor stack and electrically connected to the second semiconductor layer; an insulating layer formed on the transparent conductive layer, comprising a plurality of first opening; a first electrode formed on the insulating layer, electrically connected to the first semiconductor layer; and a second electrode formed on the insulating layer, comprising a second pad and a second extension extending from the second pad along a long side of the light-emitting diode toward the first electrode, electrically connected to the transparent conductive layer, wherein the second extension comprise a plurality of node parts and a plurality of linking parts alternately disposed, and in a plan view, the node part has a width smaller than that of the second pad and lager than that of the linking part and that of the first opening; wherein the second extension does not overlap the first electrode; and wherein the plurality of node parts contacts the transparent conductive layer through the plurality of the first openings.
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公开(公告)号：US20230317898A1
公开(公告)日：2023-10-05
申请号：US18205920
申请日：2023-06-05
Applicant: EPISTAR CORPORATION
Inventor： Hsin-Ying WANG , Chih-Hao CHEN , Chien-Chih LIAO , Chao-Hsing CHEN , Wu-Tsung LO , Tsun-Kai KO , Chen OU
Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.
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Patent Agency Ranking
公开(公告)号：US11742459B2
公开(公告)日：2023-08-29
申请号：US17879526
申请日：2022-08-02
Applicant: EPISTAR CORPORATION
Inventor： Chien-Hua Chou , Tai-Chun Wang , Chih-Tsung Su , Biau-Dar Chen
CPC classification number: H01L33/38 , H01L33/145
Abstract: A light-emitting device comprises a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion away from the pad electrode, the first portion comprises a first side and a second side, the first side is opposite to the second side, the first side comprises a first arc having a first curvature radius, and the first curvature radius is larger than 10 μm.
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公开(公告)号：US11728310B2
公开(公告)日：2023-08-15
申请号：US17838307
申请日：2022-06-13
Applicant: EPISTAR CORPORATION
Inventor： Min-Hsun Hsieh , Shih-An Liao , Ying-Yang Su , Hsin-Mao Liu , Tzu-Hsiang Wang , Chi-Chih Pu
IPC: H01L23/00 , H01L25/16 , H01L25/075 , H01L23/498 , B23K26/22 , B23K101/40
CPC classification number: H01L24/81 , B23K26/22 , H01L23/49866 , H01L24/83 , H01L25/0753 , H01L25/167 , B23K2101/40 , H01L2224/81005 , H01L2224/81224 , H01L2224/83005 , H01L2224/83224 , H01L2924/12041
Abstract: Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.
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公开(公告)号：US20230238488A1
公开(公告)日：2023-07-27
申请号：US18118488
申请日：2023-03-07
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Tsung-Hsun CHIANG , Bo-Jiun HU , Wen-Hung CHUANG , Yu-Ling LIN
CPC classification number: H01L33/382 , H01L33/00 , H01L33/10 , H01L33/24 , H01L33/385 , H01L33/387 , H01L33/42 , H01L33/46 , H01L33/62 , H01L33/0012 , H01L33/02
Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.
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公开(公告)号：US11699776B2
公开(公告)日：2023-07-11
申请号：US17185551
申请日：2021-02-25
Applicant: EPISTAR CORPORATION
Inventor： Schang-Jing Hon , Chao-Hsing Chen , Tsun-Kai Ko , Chien-Fu Shen , Jia-Kuen Wang , Hung-Che Chen
CPC classification number: H01L33/387 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/54 , H01L33/62 , H01L2224/73265
Abstract: A light-emitting element includes a substrate including a first side, a second side and a third side connecting the first side and the second side; a light-emitting semiconductor stack on the substrate and including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer and including a contact area and a first extension area; a second electrode on the second semiconductor layer; a protection layer on the light-emitting semiconductor stack and including a first through hole exposing the first electrode and a second through hole exposing the second electrode; a first conductive part on the protection layer and electrically connected to the first electrode; and a second conductive part on the protection layer and electrically connected to the second electrode, wherein the second conductive part comprises a projected area on the light-emitting semiconductor stack, the first extension area is located outside the projected area and located between the second conductive part and the third side.
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公开(公告)号：US20230215981A1
公开(公告)日：2023-07-06
申请号：US18087729
申请日：2022-12-22
Applicant: EPISTAR CORPORATION
Inventor： Jan-Way CHIEN
CPC classification number: H01L33/382 , H01L33/62 , H01L33/10
Abstract: A light-emitting device includes a semiconductor stack, a first electrode, a first electrode pad, and second electrode pads. The semiconductor stack includes a first semiconductor layer, a first mesa formed on the first semiconductor layer, and second mesas spaced apart from each other and formed on the first semiconductor layer and separated from the first mesa. The first mesa and the second mesas respectively include a second semiconductor layer on having a second conductivity type different from a first conductivity type of the semiconductor stack. The first electrode covers and contacts the first mesa and is electrically connected to the first semiconductor layer. The first electrode pad is formed on the first mesa and is connected to the first electrode layer. The second electrode pads are formed on the second mesas, and are electrically connected to the second semiconductor layer of each of the second mesas.
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