公开(公告)号：US20240176940A1

公开(公告)日：2024-05-30

申请号：US18430978

申请日：2024-02-02

Applicant: FLOSFIA INC. ,  MITSUBISHI HEAVY INDUSTRIES, LTD.

Inventor： Masato Ito ,  Masaya Mitake ,  Kengo Takeuchi ,  Toshimi Hitora ,  Fujio Okui

IPC: G06F30/392

CPC classification number: G06F30/392

Abstract: Provided is a design support apparatus that supports design of an electronic component embedded substrate, the apparatus including: a height difference calculating unit that calculates a difference between the height of a first electronic component and the height of a second electronic component on the basis of first component information containing height information about the first electronic component to be incorporated in an electronic component embedded substrate and second component information containing height information about the second electronic component to be incorporated in the electronic component embedded substrate; and a height adjustment necessity judging unit that compares the difference with a reference value set in advance, and judges the necessity of a height adjusting member to be arranged on the first electronic component and/or the second electronic component.

公开(公告)号：US20240170285A1

公开(公告)日：2024-05-23

申请号：US18425922

申请日：2024-01-29

Applicant: FLOSFIA INC. ,  KYOTO UNIVERSITY

Inventor： Kentaro KANEKO ,  Hitoshi TAKANE ,  Toshimi HITORA

IPC: H01L21/02 ,  H01L29/04

CPC classification number: H01L21/02565 ,  H01L21/02598 ,  H01L21/02609 ,  H01L29/045

Abstract: Provided is a crystalline oxide film including an oxide of germanium, an area percentage of abnormal grains determined by surface SEM observation being 3% or less.

公开(公告)号：US11855135B2

公开(公告)日：2023-12-26

申请号：US17508259

申请日：2021-10-22

Applicant: FLOSFIA INC.

Inventor： Mitsuru Okigawa ,  Hideaki Yanagida ,  Takashi Shinohe

IPC: H01L29/06 ,  H01L29/24 ,  H01L29/78 ,  H01L29/66 ,  H01L29/872 ,  H02P27/06

CPC classification number: H01L29/0623 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7802 ,  H01L29/872 ,  H02P27/06

Abstract: An object of the disclosure is to provide a semiconductor device having enhanced adhesion of the electrode while improving the reverse direction breakdown voltage, which is especially useful for power devices. A semiconductor device including a semiconductor layer and an electrode layer provided on the semiconductor layer and including at least a first electrode layer and a second electrode layer provided on the first electrode layer, wherein an outer edge portion of the second electrode layer is located outside an outer edge portion of the first electrode layer, wherein the semiconductor layer includes an electric field relaxation region with a different electrical resistivity from that of the semiconductor layer, and wherein the electric field relaxation region overlaps at least a part of a portion of the second electrode layer located outside the outer edge portion of the first electrode layer in plan view.

公开(公告)号：US20230335581A1

公开(公告)日：2023-10-19

申请号：US18207912

申请日：2023-06-09

Applicant: FLOSFIA INC.

Inventor： Yasushi HIGUCHI ,  Takashi SHINOHE

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/739 ,  H01L29/872 ,  H01L29/24

CPC classification number: H01L29/06 ,  H01L29/7869 ,  H01L29/7393 ,  H01L29/872 ,  H01L29/24

Abstract: Provided a semiconductor device having a structure to suppress hole injections into the gate insulator. A semiconductor device including a gate insulating film, a hole blocking layer placed in contact with the gate insulating film, and an oxide semiconductor layer placed in contact with the hole blocking layer, wherein the hole blocking layer is located between the gate insulating film and the oxide semiconductor layer.

公开(公告)号：US20230315959A1

公开(公告)日：2023-10-05

申请号：US18089883

申请日：2022-12-28

Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD. ,  FLOSFIA INC.

Inventor： Masato ITO ,  Masaya MITAKE ,  Kengo TAKEUCHI ,  Toshimi HITORA ,  Fujio OKUI

IPC: G06F30/3308

CPC classification number: G06F30/3308 ,  G06F2119/08

Abstract: Provided a design support apparatus of supporting design of a component embedded substrate including one or more embedded electronic components that configure at least a part of a circuit, including, a component information acquiring unit that acquires component information about the electronic components to be incorporated in the component embedded substrate; and a required minimum area calculating unit that calculates a required minimum area of a surface of the component embedded substrate on the basis of at least information about a size of each electronic component contained in the component information.

公开(公告)号：US20230261578A1

公开(公告)日：2023-08-17

申请号：US18128512

申请日：2023-03-30

Applicant: FLOSFIA INC.

Inventor： Toshihiro IWAKI ,  Takuto IGAWA ,  Hidehito KITAKADO ,  Yusuke MATSUBARA

IPC: H02M3/158 ,  H02M1/14

CPC classification number: H02M3/1582 ,  H02M1/143

Abstract: Provided is a power conversion circuit and a control system in which radiated noise of the entire circuit is reduced. A power conversion circuit including at least: a switching element (e.g. a MOSFET, etc.) and a diode (e.g. a commutating diode, etc.): wherein the power conversion circuit is a single-switch power conversion; and the diode is a gallium oxide-based Schottky barrier diode.

公开(公告)号：US11694894B2

公开(公告)日：2023-07-04

申请号：US17239986

申请日：2021-04-26

Applicant: FLOSFIA INC.

Inventor： Yuichi Oshima ,  Katsuaki Kawara

IPC: H01L21/02 ,  H01L29/04 ,  H01L29/24 ,  C30B25/04 ,  C30B25/18 ,  C30B29/16 ,  H02M3/335

CPC classification number: H01L21/02565 ,  C30B25/04 ,  C30B25/18 ,  C30B29/16 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/0262 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/24 ,  H02M3/33573 ,  H02M3/33576

Abstract: A high-quality crystalline film having less impurity of Si and the like and useful in semiconductor devices is provided. A crystalline film containing a crystalline metallic oxide including gallium as a main component, wherein the crystalline film includes a Si in a content of 2×1015 cm−3 or less.

公开(公告)号：US20220406943A1

公开(公告)日：2022-12-22

申请号：US17890477

申请日：2022-08-18

Applicant: FLOSFIA INC.

Inventor： Katsuaki KAWARA

IPC: H01L29/786 ,  H01L29/24 ,  H01L23/367 ,  H01L23/42 ,  H01L21/02 ,  C30B25/02 ,  C30B29/16

Abstract: Provided is a semiconductor device, including at least: a semiconductor layer; and a gate electrode that is arranged directly or via another layer on the semiconductor layer, the semiconductor device being configured in such a manner as to cause a current to flow in the semiconductor layer at least in a first direction that is along with an interface between the semiconductor layer and the gate electrode, the semiconductor layer having a corundum structure, a direction of an m-axis in the semiconductor layer being the first direction.

公开(公告)号：US20220367674A1

公开(公告)日：2022-11-17

申请号：US17874977

申请日：2022-07-27

Applicant: FLOSFIA INC.

Inventor： Takayoshi OSHIMA

IPC: H01L29/66 ,  C23C16/04 ,  C30B29/16 ,  H01L29/872 ,  H01L29/45

Abstract: A semiconductor device includes: a semiconductor film including a Schottky junction region and an Ohmic junction region; a Schottky electrode arranged on the Schottky junction region; and an Ohmic electrode arranged on the Ohmic junction region, the Schottky junction region having a first dislocation density, the Ohmic junction region having a second dislocation region, and the first dislocation density being smaller than the second dislocation density.

公开(公告)号：US20220352303A1

公开(公告)日：2022-11-03

申请号：US17866747

申请日：2022-07-18

Applicant: FLOSFIA INC. ,  KYOTO UNIVERSITY

Inventor： Shizuo FUJITA ,  Kentaro KANEKO ,  Toshimi HITORA ,  Tomochika TANIKAWA

IPC: H01L29/06 ,  H01L29/47 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/02 ,  H01L29/24 ,  H01L29/739 ,  H01L29/12 ,  H02M3/28 ,  H01L33/26

Abstract: A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.