公开(公告)号：US08654565B2

公开(公告)日：2014-02-18

申请号：US13658697

申请日：2012-10-23

Applicant: Unity Semiconductor Corporation

Inventor： Christophe Chevallier ,  Chang Hua Siau

IPC: G11C11/00

CPC classification number: G11C13/0033 ,  G11C11/21 ,  G11C13/0011 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0069

Abstract: Embodiments of the invention relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to generate access signals to facilitate memory operations in scaled arrays of memory elements, such as memory implemented in third dimensional memory technology formed BEOL directly on top of a FEOL substrate that includes data access circuitry. In at least some embodiments, a non-volatile memory device can include a cross-point array having resistive memory elements disposed among word lines and subsets of bit lines, and an access signal generator. The access signal generator can be configured to modify a magnitude of a signal to generate a modified magnitude for the signal to access a resistive memory element associated with a word line and a subset of bit lines. The modified magnitude can be a function of the position of the resistive memory element in the cross-point array.

Abstract translation: 本发明的实施例一般涉及半导体和存储器技术，更具体地涉及系统，集成电路和方法，用于产生存取信号以促进存储器元件的按比例排列的存储器操作，诸如在形成的第三维存储器技术中实现的存储器 直接位于包含数据访问电路的FEOL基板之上。 在至少一些实施例中，非易失性存储器件可以包括具有布置在字线和位线子集之间的电阻性存储器元件的交叉点阵列和存取信号发生器。 访问信号发生器可被配置为修改信号的大小以产生用于信号访问与字线和位线子集相关联的电阻性存储器元件的修改幅度。 修改的幅度可以是交叉点阵列中的电阻性存储元件的位置的函数。

公开(公告)号：US20140014893A1

公开(公告)日：2014-01-16

申请号：US14025714

申请日：2013-09-12

Applicant: Unity Semiconductor Corporation

Inventor： Roy Lambertson ,  Lawrence Schloss

IPC: H01L45/00

CPC classification number: H01L45/146 ,  G11C11/36 ,  G11C13/003 ,  G11C29/006 ,  G11C2213/71 ,  G11C2213/76 ,  H01L27/101 ,  H01L27/1021

Abstract: A two-terminal memory cell including a Schottky metal-semiconductor contact as a selection device (SD) allows selection of two-terminal cross-point memory array operating voltages that eliminate “half-select leakage current” problems present when other types of non-ohmic devices are used. The SD structure can comprise a “metal/oxide semiconductor/metal” or a “metal/lightly-doped single layer polycrystalline silicon.” The memory cell can include a two-terminal memory element including at least one conductive oxide layer (e.g., a conductive metal oxide—CMO, such as a perovskite or a conductive binary oxide) and an electronically insulating layer (e.g., yttria-stabilized zirconia—YSZ) in contact with the CMO. The SD can be included in the memory cell and configured electrically in series with the memory element. The memory cell can be positioned in a two-terminal cross-point array between a pair of conductive array lines (e.g., a bit line and a word line) across which voltages for data operations are applied.

Abstract translation: 包括肖特基金属 - 半导体触点作为选择装置（SD）的双端存储单元允许选择两端交叉点存储阵列工作电压，以消除当其它类型的非 - 使用欧姆器件。 SD结构可以包括“金属/氧化物半导体/金属”或“金属/轻掺杂单层多晶硅”。 存储器单元可以包括包括至少一个导电氧化物层（例如，导电金属氧化物-CMO，例如钙钛矿或导电二元氧化物）的两端存储元件和电绝缘层（例如，氧化钇稳定的氧化锆 -YSZ）与CMO接触。 SD可以被包括在存储单元中并与存储元件串联构造。 存储器单元可以位于一对导电阵列线（例如，位线和字线）之间的两端交叉点阵列中，用于数据操作的电压被施加在该两端交叉点阵列上。

公开(公告)号：US20040160807A1

公开(公告)日：2004-08-19

申请号：US10330900

申请日：2002-12-26

Applicant: Unity Semiconductor Corporation

Inventor： Darrell Rinerson ,  Steven W. Longcor ,  Steve Kuo-Ren Hsia ,  Wayne Kinney ,  Edmond R. Ward ,  Christophe J. Chevallier

IPC: G11C011/00

CPC classification number: G11C13/0007 ,  G11C11/5685 ,  G11C2213/31 ,  G11C2213/77

Abstract: Providing a cross point memory array with memory plugs exhibiting a characteristic hysteresis. The memory plugs exhibit a hysteresis that, in the low resistive state, the first write threshold voltage is the point above which any voltages applied across the memory plug have substantially no effect on the resistive state and below which a voltage pulse will alter the resistance of the memory plug. Similarly, in the high resistive state, the second write threshold voltage is the point below which any voltages applied across the memory plug have substantially no effect on the resistive state and above which a voltage pulse will alter the resistance of the memory plug. The read voltages applied to the memory plug are typically above the first write threshold voltage and lower than the second write threshold voltage.

Abstract translation: 提供具有表现出特征滞后的存储插件的交叉点存储器阵列。 存储插头表现出滞后现象，在低电阻状态下，第一写入阈值电压是高于其上施加在存储器插头上的任何电压对电阻状态基本上没有影响的点，并且低于该电压脉冲将改变电阻 内存插头。 类似地，在高电阻状态下，第二写入阈值电压是低于施加在存储器插头上的任何电压对电阻状态基本上没有影响的点，并且高于该电压脉冲将改变存储器插头的电阻。 施加到存储器插头的读取电压通常高于第一写入阈值电压并低于第二写入阈值电压。

公开(公告)号：US20240281955A1

公开(公告)日：2024-08-22

申请号：US18651957

申请日：2024-05-01

Applicant: UNITY SEMICONDUCTOR

Inventor： Wolfgang Alexander IFF ,  Alain COURTEVILLE

IPC: G06T7/00 ,  B81C99/00 ,  G01B11/22 ,  G06T7/521 ,  G06T7/60

CPC classification number: G06T7/0004 ,  B81C99/003 ,  G01B11/22 ,  G06T7/521 ,  G06T7/60 ,  G06T2207/30148

Abstract: A method for characterizing structures etched in a substrate, such as a wafer is disclosed. A bottom of the structure is embedded in the substrate, the substrate having a top side in which the structures are etched and a bottom side opposite to the top side. The method includes the following steps: illuminating the bottom of at least one structure with an illumination beam issued from a light source emitting light with a wavelength adapted to be transmitted through the substrate, acquiring, with an imaging device positioned on the bottom side of said substrate, at least one image of a bottom of the at least one structure through the substrate, and measuring at least one data, called lateral data, relating to a lateral dimension of the bottom of the at least one HAR structure from the at least one acquired image. A system implementing such a method is also disclosed.

公开(公告)号：US20240068956A1

公开(公告)日：2024-02-29

申请号：US18341339

申请日：2023-06-26

Applicant: Unity Semiconductor

Inventor： Mayeul Durand de Gevigney ,  Guillaume Vienne ,  Kaiss Benhadjsalem

IPC: G01N21/95 ,  G01N21/88

CPC classification number: G01N21/9501 ,  G01N21/8806 ,  G01N2021/8845 ,  G01N2201/0846

Abstract: A system for optical inspection of a substrate. The system comprises an illumination device defining an inspection area on the substrate, a support to receive the substrate, and a detection device defining a detection area on the substrate. The inspection area is positioned ahead, with respect to the scanning direction, of at least a portion of the detection area.

公开(公告)号：US11906302B2

公开(公告)日：2024-02-20

申请号：US18302151

申请日：2023-04-18

Applicant: UNITY SEMICONDUCTOR

Inventor： Jean-François Boulanger ,  Isabelle Bergoënd

IPC: G01B9/0209 ,  G01B9/02 ,  G01B11/06

CPC classification number: G01B9/0209 ,  G01B9/02083 ,  G01B9/02088 ,  G01B11/0625 ,  G01B2210/56

Abstract: A method and related system for measuring a surface of a substrate including at least one structure using low coherence optical interferometry, the method being implemented with a system having an interferometric device, a light source, an imaging sensor, and a processing module, the method including: - acquiring, with the imaging sensor, an interferometric signal formed by the interferometric device between a reference beam and a measurement beam reflected by the surface at a plurality of measurement points in a field of view; the following steps being carried out by the processing module: classifying, by a learning technique, the acquired interferometric signals according to a plurality of classes, each class being associated with a reference interferometric signal representative of a typical structure; and analysing the interferometric signals to derive information on the structure at the measurement points, as a function of the class of each interferometric signal.

公开(公告)号：US20220341728A1

公开(公告)日：2022-10-27

申请号：US17762859

申请日：2020-09-16

Applicant: SHIN-ETSU HANDOTAI CO., LTD. ,  UNITY SEMICONDUCTOR

Inventor： Susumu KUWABARA ,  Kevin QUINQUINET ,  Philippe GASTALDO

IPC: G01B11/06

Abstract: A method includes: determining height Z1 of a focus by an optical microscope having autofocus function which uses irradiation light of wavelength λ0 to adjust the focus; determining a wavelength λ1 of irradiation light used for obtaining observation image of second thin film; obtaining observation image of second thin film by using irradiation light of the wavelength λ1, while altering heights of the focus with the Z1 as reference point; calculating standard deviation of reflected-light intensity distribution within the observation image, obtaining height Z2 of the focus corresponding to a peak position where standard deviation is greatest, and calculating a difference ΔZ between Z1 and Z2; correcting the autofocus function with ΔZ as a correction value; and using the corrected autofocus function to adjust the focus, obtaining the observation image of the second thin film, and calculating the film thickness distribution from the reflected-light intensity distribution within the observation image.

公开(公告)号：US20210349037A1

公开(公告)日：2021-11-11

申请号：US17283686

申请日：2019-09-20

Applicant: Unity Semiconductor

Inventor： Mayeul Durand de Gevigney

IPC: G01N21/88 ,  G01N21/95 ,  G01N21/47

Abstract: A device for dark-field optical inspection of a substrate comprises: a light source for generating an incident beam that is projected onto an inspection zone of the substrate and that is capable of being reflected in the form of diffuse radiation; at least one first and one second collecting device; and a reflecting device for directing at least a portion of the diffuse radiation originating from a focal point of collection coincident with the inspection zone in the direction of the collecting devices, with a first and second reflective zone from which a first portion of the diffuse radiation is directed toward a first focal point, which is optically conjugated with the focal point of collection, and a second portion of the diffuse radiation is reflected toward a second focal point, which is optically conjugated with the collection focal point and distinct from the first focal point of detection.

公开(公告)号：US20210215617A1

公开(公告)日：2021-07-15

申请号：US16959930

申请日：2018-12-27

Applicant: UNITY SEMICONDUCTOR

Inventor： Mayeul DURAND DE GEVIGNEY

IPC: G01N21/88 ,  G01N21/95

Abstract: A method and related system for substrate inspection, includes: creating, based on two light beams originating from one light source, a measurement volume at the intersection between the two light beams, the measurement volume containing interference fringes and being positioned to extend into the substrate, the substrate moving relative to the measurement volume in a direction parallel to a main surface S of the substrate; acquiring a measurement signal representative of the light scattered by the substrate, as a function of the location of the measurement volume on the substrate; calculating at least one expected modulation frequency, of an expected signal representative of the passage of a defect of the substrate through the measurement volume; determining values representative of a frequency content of the measurement signal close to the modulation frequency, to constitute a validated signal representative of the presence of defects; and analyzing the signal to locate and/or identify defects.

公开(公告)号：US20210116694A1

公开(公告)日：2021-04-22

申请号：US16981778

申请日：2019-03-13

Applicant: UNITY SEMICONDUCTOR

Inventor： Mayeul DURAND DE GEVIGNEY ,  Jérôme PORQUE

IPC: G02B21/08 ,  G02B21/12

Abstract: A lighting device for an imaging system with an imaging objective lens, including: a sleeve configured to be positioned around the imaging objective lens; at least one optical fibre integral with the sleeve and arranged to guide a light originating from at least one light source; and a directing component configured to orient a light beam emitted by the at least one optical fibre so as to illuminate a field of view of the imaging system along a lighting axis forming an angle with respect to the optical axis of the objective lens larger than the numerical aperture of the imaging system.