公开(公告)号：US12031209B2

公开(公告)日：2024-07-09

申请号：US17176984

申请日：2021-02-16

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lakmal C. Kalutarage ,  Thomas Knisley

IPC: C23C16/18 ,  C07F7/00 ,  C07F7/02 ,  C07F7/22 ,  C07F7/30 ,  C23C16/455

CPC classification number: C23C16/45553 ,  C07F7/003 ,  C07F7/025 ,  C07F7/2224 ,  C07F7/2284 ,  C07F7/30 ,  C23C16/18 ,  C23C16/45534

Abstract: Methods of forming a metal film having a metal halide with a reducing agent are disclosed. The reducing agent, the reducing agent includes a group IV element containing heterocyclic compound, a radical initiator, an alkly alane, a diborene species and/or a Sn(II) compound.

公开(公告)号：US20240087880A1

公开(公告)日：2024-03-14

申请号：US17896734

申请日：2022-08-26

Applicant: Applied Materials, Inc.

Inventor： Shruba Gangopadhyay ,  Bhaskar Jyoti Bhuyan ,  Michael Haverty ,  Bo Xie ,  Li-Qun Xia ,  Rui Lu ,  Yijun Liu ,  Ruitong Xiong ,  Xiaobo Li ,  Lakmal C. Kalutarage ,  Lauren Bagby

IPC: H01L21/02 ,  C23C16/30 ,  H01J37/32

CPC classification number: H01L21/02126 ,  C23C16/30 ,  H01J37/32357 ,  H01J37/32724 ,  H01L21/02208 ,  H01L21/02274

Abstract: Embodiments include semiconductor processing methods to form low-κ films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system. The one or more deposition precursors may include a silicon-containing precursor that may be a cyclic compound. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.

公开(公告)号：US20240038833A1

公开(公告)日：2024-02-01

申请号：US18222086

申请日：2023-07-14

Applicant: Applied Materials, Inc.

Inventor： Fredrick Fishburn ,  Tomohiko Kitajima ,  Qian Fu ,  Srinivas Guggilla ,  Hang Yu ,  Jun Feng ,  Shih Chung Chen ,  Lakmal C. Kalutarage ,  Jayden Potter ,  Karthik Janakiraman ,  Deenesh Padhi ,  Yifeng Zhou ,  Yufeng Jiang ,  Sung-Kwan Kang

IPC: H10B12/00

CPC classification number: H01L28/91 ,  H01L28/92 ,  H10B12/03 ,  H10B12/30

Abstract: Memory devices and methods of forming memory devices are described. Methods of forming electronic devices are described where carbon is used as the removable mold material for the formation of a DRAM capacitor. A dense, high-temperature (500° C. or greater) PECVD carbon material is used as the removable mold material, e.g., the core material, instead of oxide. The carbon material can be removed by isotropic etching with exposure to radicals of oxygen (O2), nitrogen (N2), hydrogen (H2), ammonia (NH3), and combinations thereof.

公开(公告)号：US20230295803A1

公开(公告)日：2023-09-21

申请号：US18135024

申请日：2023-04-14

Applicant: Applied Materials, Inc.

Inventor： Haoming Yan ,  Shih Chung Chen ,  Mandyam Sriram ,  EunKee Hong ,  Janardhan Devrajan ,  Lakmal C. Kalutarage ,  Yongjing Lin ,  Lisa Michelle Mandrell ,  Arkaprava Dan

IPC: C23C16/455 ,  C23C16/56 ,  H01L21/285 ,  H01L21/321 ,  H01L21/3205 ,  H01L29/40

CPC classification number: C23C16/45553 ,  C23C16/56 ,  H01L21/28525 ,  H01L21/28568 ,  H01L21/321 ,  H01L21/32055 ,  H01L21/28575 ,  H01L29/401

Abstract: Methods of forming metal-containing films for electronic devices (e.g., logic devices and/or memory devices) and methods for reducing equivalent oxide thickness (EOT) penalty in electronic devices are disclosed. The methods comprise exposing a substrate surface to a metal precursor, such as titanium chloride (TiCl4), a reducing agent, such as a cyclic 1,4-diene, and a reactant, ammonia (NH3), either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.

公开(公告)号：US20230295794A1

公开(公告)日：2023-09-21

申请号：US18201442

申请日：2023-05-24

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Bhaskar Jyoti Bhuyan ,  Aaron Dangerfield ,  Feng Q. Liu ,  Mark Saly ,  Michael Haverty ,  Muthukumar Kaliappan

IPC: C23C16/04 ,  C23C16/02 ,  C23C16/56 ,  H01L21/32 ,  H01L21/02

CPC classification number: C23C16/042 ,  C23C16/0272 ,  C23C16/56 ,  H01L21/32 ,  H01L21/0228 ,  H01L21/02172 ,  H01L21/02211 ,  H01L21/0217

Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

公开(公告)号：US11515149B2

公开(公告)日：2022-11-29

申请号：US15654185

申请日：2017-07-19

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Mark Saly ,  David Thompson ,  Abhijit Basu Mallick ,  Tejasvi Ashok ,  Pramit Manna

IPC: C23C16/22 ,  H01L21/02 ,  H01L21/762

Abstract: Methods for seam-less gapfill comprising forming a flowable film by exposing a substrate surface to a silicon-containing precursor and a co-reactant are described. The silicon-containing precursor has at least one akenyl or alkynyl group. The flowable film can be cured by any suitable curing process to form a seam-less gapfill.

公开(公告)号：US20220372616A1

公开(公告)日：2022-11-24

申请号：US17315223

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Bhaskar Jyoti Bhuyan ,  Aaron Dangerfield ,  Feng Q. Liu ,  Mark Saly ,  Michael Haverty ,  Muthukumar Kaliappan

IPC: C23C16/04 ,  C23C16/56 ,  C23C16/02

Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

公开(公告)号：US11289328B2

公开(公告)日：2022-03-29

申请号：US16456978

申请日：2019-06-28

Applicant: Applied Materials, Inc.

Inventor： Thomas Knisley ,  Mark Saly ,  Lakmal C. Kalutarage ,  David Thompson

IPC: C23C16/56 ,  H01L21/02 ,  H01L21/311 ,  C23C16/455

Abstract: Chromium containing precursors and methods of forming chromium-containing thin films are described. The chromium precursor has a chromium-diazadiene bond or cyclopentadienyl ligand and is homoleptic or heteroleptic. A suitable reactant is used to provide one of a metallic chromium film or a film comprising one or more of an oxide, nitride, carbide, boride and/or silicide. Methods of forming ternary materials comprising chromium with two or more of oxygen, nitrogen, carbon, boron, silicon, titanium, ruthenium and/or tungsten are also described. Methods of filling gaps in a substrate with a chromium-containing film are also described.

公开(公告)号：US20210050212A1

公开(公告)日：2021-02-18

申请号：US16989156

申请日：2020-08-10

Applicant: Applied Materials, Inc.

Inventor： William J. Durand ,  Mark Saly ,  Lakmal C. Kalutarage ,  Kang Sub Yim ,  Shaunak Mukherjee

IPC: H01L21/02 ,  H01L21/3205 ,  H01L21/683 ,  C23C16/50 ,  C23C16/24 ,  C23C16/34 ,  C23C16/32 ,  C23C16/40 ,  C23C16/36 ,  C23C16/30

Abstract: Methods for deposition of high-hardness low-κ dielectric films are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate, the precursor having the general formula (I) wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), alkyl, alkoxy, vinyl, silane, amine, or halide; maintaining the substrate at a pressure in a range of about 0.1 mTorr and about 10 Torr and at a temperature in a range of about 200° C. to about 500° C.; and generating a plasma at a substrate level to deposit a dielectric film on the substrate.