Abstract:
A MEMS infrared sensing device includes a substrate and an infrared sensing element. The infrared sensing element is provided above the substrate and has a sensing area and an infrared absorbing area which do not overlap each other. The infrared sensing element includes two infrared absorbing structures, an infrared sensing layer provided between the two infrared absorbing structures, and an interdigitated electrode structure located in the sensing area. Each of the two infrared absorbing structures includes at least one infrared absorbing layer, and the two infrared absorbing structures are located in the sensing area and the infrared absorbing area. The infrared sensing layer is located in the sensing area and does not extend into the infrared absorbing area. The interdigitated electrode structure is in electrical contact with the infrared sensing layer.
Abstract:
A polishing slurry for silicon, a method of polishing polysilicon, and a method of manufacturing a thin film transistor substrate, the slurry including a polishing particle; a dispersing agent including an anionic polymer, a hydroxyl acid, or an amino acid; a stabilizing agent including an organic acid, the organic acid including a carboxyl group; a hydrophilic agent including a hydrophilic group and a hydrophobic group, and water, wherein the polishing particle is included in the polishing slurry in an amount of about 0.1% by weight to about 10% by weight, based on a total weight of the slurry, a weight ratio of the polishing particle and the dispersing agent is about 1:0.01 to about 1:0.2, a weight ratio of the polishing particle and the stabilizing agent is about 1:0.001 to about 1:0.1, and a weight ratio of the polishing particle and the hydrophilic agent is about 1:0.01 to about 1:3.
Abstract:
Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
Abstract:
Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
Abstract:
A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a thermoplastic first polymer onto the frontside surface and into each hole; (ii) reflowing the first polymer; (iii) exposing the wafer substrate to a controlled oxidative plasma; (iv) optionally repeating steps (i) to (iii); (v) depositing a layer of a photoimageable second polymer; (vi) selectively removing the second polymer from regions outside a periphery of the holes using exposure and development; and (vii) planarizing the frontside surface to provide holes filled with a plug comprising the first and second polymers, which are different than each other. Each plug has a respective upper surface coplanar with the frontside surface.
Abstract:
An adaptive feedback control method is provided for a chemical mechanical polish process to minimize a dielectric layer clearing time difference between two annular regions on a substrate. An optical system with an optical window passes below the polishing pad and detects reflected light interference signals from at least two annular regions. A pre-clearing time difference is determined and is used to calculate an adjustment to one or both of a CMP head membrane pressure and a retaining ring pressure. The pressure adjustment is applied before the end of the polish cycle to avoid the need for a second polish cycle and to reduce a dishing difference and a resistance difference in a metal layer in the at least two annular regions. In some embodiments, a second pressure adjustment is performed before the end of the cycle and different CMP head membrane pressure adjustments are made in different pressure zones.
Abstract:
Semiconductor manufacturing processes include providing a first substrate having a first passivation layer disposed above a patterned top-level metal layer, and further having a second passivation layer disposed over the first passivation layer; the second passivation layer has a top surface. The processes further include forming an opening in a first portion of the second passivation layer, and the opening exposes a portion of a surface of the first passivation layer. The processes further include patterning the second and first passivation layers to expose portions of the patterned top-level metal layer and bonding a second substrate and the first substrate to each other. The bonding occurs within a temperature range in which at least the exposed portion of the first passivation layer undergoes outgassing.
Abstract:
A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a thermoplastic first polymer onto the frontside surface and into each hole; (ii) reflowing the first polymer; (iii) exposing the wafer substrate to a controlled oxidative plasma; (iv) optionally repeating steps (i) to (iii); (v) depositing a layer of a photoimageable second polymer; (vi) selectively removing the second polymer from regions outside a periphery of the holes using exposure and development; and (vii) planarizing the frontside surface to provide holes filled with a plug comprising the first and second polymers, which are different than each other. Each plug has a respective upper surface coplanar with the frontside surface.
Abstract:
An adaptive feedback control method is provided for a chemical mechanical polish process to minimize a dielectric layer clearing time difference between two annular regions on a substrate. An optical system with an optical window passes below the polishing pad and detects reflected light interference signals from at least two annular regions. A pre-clearing time difference is determined and is used to calculate an adjustment to one or both of a CMP head membrane pressure and a retaining ring pressure. The pressure adjustment is applied before the end of the polish cycle to avoid the need for a second polish cycle and to reduce a dishing difference and a resistance difference in a metal layer in the at least two annular regions. In some embodiments, a second pressure adjustment is performed before the end of the cycle and different CMP head membrane pressure adjustments are made in different pressure zones.
Abstract:
A method of manufacturing a semiconductor device includes: a bonding step of bonding a first substrate with optical transparency and a second substrate having a surface on which a functional element is provided to each other such that the functional element faces the first substrate; a thinning step of thinning at least one of the first and second substrates; and a through-hole forming step of forming a cavity and a through-hole communicated with the cavity in at least part of a bonding portion between the first and second substrates. According to the present invention, it is possible to prevent irregularities or cracks caused by the presence or absence of the cavity and more regularly thin the substrate. In addition, it is possible to manufacture a semiconductor device capable of contributing to the miniaturization of devices and electronic equipment having the devices, using a more convenient process.