Abstract:
An infrared camera architecture includes, for an embodiment, an infrared detector, a substrate, a plurality of electrical components coupled to the substrate, and a pedestal made of a thermally conductive material and having a leg coupled to the substrate. The infrared detector is supported by and thermally coupled to the pedestal, with the pedestal thermally isolating the infrared detector from the plurality of electrical components.
Abstract:
A light amount measuring apparatus including a light amount measuring circuit and a power supply for supplying power to the light amount measuring circuit; wherein the light amount measuring circuit includes a light receiving device for receiving light and outputting an electric signal corresponding to light amount of the received light; a first switch for switching between electrical connection and disconnection between the light receiving device and the power supply; and a drive controller for controlling the first switch so that the first switch electrically connects the light receiving device to the power supply when the light receiving device is set to an activated state and electrically disconnects the light receiving device from the power supply when the light receiving device is set to a deactivated state.
Abstract:
Pixel-level monolithic optical element configurations for uncooled infrared detectors and focal plane arrays in which a monolithically integrated or fabricated optical element may be suspended over a microbolometer pixel membrane structure of an uncooled infrared detector element A monolithic optical element may be, for example, a polarizing or spectral filter element, an optically active filter element, or a microlens element that is structurally attached by an insulating interconnect to the existing metal interconnects such that the installation of the optical element substantially does not impact the thermal mass or thermal time constant of the microbolometer pixel structure, and such that it requires little if any additional device real estate area beyond the area originally consumed by the microbolometer pixel structure interconnects.
Abstract:
A semiconductor light source with optical feedback includes a vertical member extending upward from an upper horizontal surface of a header parallel to a vertical beam projected from a semiconductor light-emitting element mounted on the horizontal surface of the header wherein the vertical member supports a light-sensing element for receiving light reflected transversely from the vertical beam by a beam splitter supported by the vertical member. The vertical beam passing through the beam splitter passes through a window or filter in a cap mounted on the header and covering the light-emitting element, the light-sensing element, the beam splitter, and the vertical member. Substantially all of the transversely reflected light impinges on the light-sensing element and can be used to control the power to the light-emitting element. A simple lens can by used to collimate the beam. Interior portions of the unit are formed from light absorbing materials such as black ceramic, black plastic, anodized aluminum, etc. The combined effect of the non-reflective interior of the assembly, the orientation of the photo-diode to have an acceptance cone perpendicular to the beam axis, the small entrance pupil, and the optical filter reduces ambient radiation in the unit by as much as −75 dB of the level outside the device. This reduces noise and drift in the automatic power control loop to produce constant intensity in the output light beam.
Abstract:
A light source device 1 includes a laser light source 10 and an optical phase modulator 15 or the like. The optical phase modulator 15 inputs coherent light output from the laser light source 10 and transmitted through a beam splitter 14, phase-modulates the light according to the position on a beam cross section of the light, and outputs the phase-modulated light to the beam splitter 14. When (p+1) areas sectioned by p circumferences centered on a predetermined position are set on a beam cross section of light input to the optical phase modulator 15, the more outside each of the (p+1) areas is, the wider the radial width of the area, the amount of phase modulation is constant in each of the (p+1) areas, and the amounts of phase modulation differ by π between two adjacent areas out of the (p+1) areas.
Abstract:
An image sensor module capable of facilitating an electrical and mechanical connection of an electric component and a fabrication thereof are disclosed. The image sensor module includes a sensor chip; at least one lens disposed above the sensor chip; at least one electric component disposed with respect to the at least one lens to adjust optical characteristics of the at least one lens; a housing accommodating and closing up the sensor chip, the at least one lens and the at least one electric component, and having an opening to expose the at least one lens to an outside thereof; and a wiring part longitudinally disposed on an inner surface of the housing, and including at least one conducting wire having a first connecting terminal exposed to the outside of the housing to allow the at least one conducting wire to electrically connect a terminal pad of the at least one electric component with an external electronic device and a second connecting terminal connected to the terminal pad of the at least one electric component.
Abstract:
The present invention relates to a optical lighting device comprising several solid state light sources (2) and at least one optical sensor (4) arranged between the solid state light sources (2) in approximately the same plane. An optical deflection unit (5, 13) is mounted in front of the sensor (4) and designed to deflect light laterally emitted by the solid state light sources (2) to the optical sensor (4). The deflection unit (5, 13) is designed to inhibit the transmission of ambient light to the optical sensor (4).
Abstract:
A compound sensor which can improve the space for installing sensors and an operation for installing sensors by organizing various types of sensors, are provided. A compound sensor according to the present invention includes a light-shielding plate (3A) having one face onto which sunlight is irradiated and the other face located on a side opposite to the one face, which shields the sunlight from the one face side toward the other face side, a solar sensor (8A-8C) provided in the one face of the light-shielding plate (3A), and a temperature sensor provided in the other face side of the light-shielding plate (3A).
Abstract:
The invention relates to a microstructured sensor, having at least one measurement chip in which there is formed a first measurement area having a first measurement structure and a second measurement area having a second measurement structure, the measurement areas being offset to one another in a lateral direction, one cap chip that is fastened in vacuum-tight fashion to the measurement chip in a connecting area, one intermediate space, formed between the measurement chip and the cap chip, that is sealed outwardly by the connecting area and in which the measurement areas are situated, and at least one contact area, formed on the measurement chip, and left exposed by the cap chip, for the contacting of the measurement chip. The sensor can be in particular a gas sensor for measuring a gas concentration, or an acceleration sensor.
Abstract:
A cost-effective FPA includes a plurality of detectors per pixel, wherein radiation is directed by a microlens array into respective focal regions that are covered by the union of the detectors' collections regions within each pixel and any defective detectors are de-selected in the ROIC. The operability of each pixel is evaluated, and a map generated specifying detector de-selection for each pixel. This map is read into memory in the ROIC to de-select bad detectors. Bad detectors are preferably allowed to float to a photovoltage and re-emit some of their accumulated photo charge to neighboring detectors to improve collection efficiency. The radiation levels are preferably read out on a pixel-by-pixel basis. Accordingly, the signals from the selected detectors are combined within each pixel.