公开(公告)号：US07714308B2

公开(公告)日：2010-05-11

申请号：US11899291

申请日：2007-09-05

Applicant: Masahito Hiroshima

Inventor： Masahito Hiroshima

IPC: H01J37/30 ,  H01J37/08 ,  G21K5/00

CPC classification number: H01J37/1472 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/3023 ,  H01J37/3174 ,  H01J2237/0455 ,  H01J2237/0456 ,  H01J2237/0458 ,  H01J2237/0835

Abstract: This VSB lithography system includes a first, second and third aperture for forming a single electron beam in each of the rectangular opening portion that are provided, and draws a figure pattern using the single electron beam formed by passing the beam through the first, second and third aperture in sequence. Each of the first, second and third aperture has a mechanism for rotationally driving the aperture around an optical axis up to an arbitrary angle from 0 to 360°. Further, in the third aperture, a mechanism for varying the opening slit width of the rectangular opening portion is provided.

Abstract translation: 该VSB光刻系统包括用于在设置的每个矩形开口部分中形成单个电子束的第一，第二和第三孔，并且使用通过使光束穿过第一，第二和第二孔而形成的单个电子束来绘制图形图案 第三个孔径顺序。 第一，第二和第三孔中的每一个具有用于围绕光轴旋转地驱动孔径至0至360°任意角度的机构。 此外，在第三孔中，设置有用于改变矩形开口部分的开口狭缝宽度的机构。

公开(公告)号：US20090321632A1

公开(公告)日：2009-12-31

申请号：US12146122

申请日：2008-06-25

Applicant: John Francis Grant ,  Patrick Richard Splinter

Inventor： John Francis Grant ,  Patrick Richard Splinter

IPC: H01J49/00 ,  H01J37/08

CPC classification number: H01J37/04 ,  H01J37/05 ,  H01J37/244 ,  H01J2237/022 ,  H01J2237/0455 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/24578

Abstract: An ion implantation system comprising an ion source configured to generate an ion beam along a beam path, a mass analyzer is located downstream of the ion source wherein the mass analyzer is configured to perform mass analysis of the ion beam and a beam complementary aperture located downstream of the mass analyzer and along the beam path, the beam complementary aperture having a size and shape corresponding to a cross-sectional beam envelope of the ion beam.

Abstract translation: 一种离子注入系统，包括被配置为沿着光束路径产生离子束的离子源，质量分析器位于离子源的下游，其中质量分析器被配置为执行离子束的质量分析和位于下游的束互补孔 的质量分析器并且沿着光束路径，光束互补孔具有对应于离子束的横截面波束包围的尺寸和形状。

公开(公告)号：US07482598B2

公开(公告)日：2009-01-27

申请号：US11567485

申请日：2006-12-06

Applicant: Russell J. Low ,  Jonathan Gerald England ,  Stephen E. Krause ,  Eric D. Hermanson

Inventor： Russell J. Low ,  Jonathan Gerald England ,  Stephen E. Krause ,  Eric D. Hermanson

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/09 ,  H01J37/15 ,  H01J37/18 ,  H01J37/302 ,  H01J37/3023 ,  H01J2237/0455 ,  H01J2237/0458 ,  H01J2237/1503 ,  H01J2237/182 ,  H01J2237/188 ,  H01J2237/30488 ,  H01J2237/31705 ,  H01L21/266

Abstract: Techniques for preventing parasitic beamlets from affecting ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for preventing parasitic beamlets from affecting ion implantation. The apparatus may comprise a controller that is configured to scan a spot beam back and forth, thereby forming an ion beam spanning a predetermined width. The apparatus may also comprise an aperture mechanism that, if kept stationary, allows the spot beam to pass through. The apparatus may further comprise a synchronization mechanism, coupled to the controller and the aperture mechanism, that is configured to cause the aperture mechanism to move in synchronization with the scanned spot beam, allowing the scanned spot beam to pass through but blocking one or more parasitic beamlets associated with the spot beam.

Abstract translation: 公开了用于防止寄生子束影响离子注入的技术。 在一个特定的示例性实施例中，技术可以被实现为用于防止寄生子束影响离子注入的装置。 该装置可以包括配置成来回扫描点波束的控制器，从而形成横跨预定宽度的离子束。 该装置还可以包括孔机构，如果保持静止，则允许点束通过。 该装置还可以包括耦合到控制器和孔机构的同步机构，其被配置为使得孔径机构与扫描的点光束同步地移动，允许扫描的光束穿过但阻挡一个或多个寄生 与点光束相关的子束。

公开(公告)号：US20070138403A1

公开(公告)日：2007-06-21

申请号：US10569963

申请日：2004-08-02

Applicant: Dane Cubric ,  Pieter Kruit

Inventor： Dane Cubric ,  Pieter Kruit

IPC: H01J1/50

CPC classification number: H01J37/05 ,  H01J37/09 ,  H01J37/263 ,  H01J2237/045 ,  H01J2237/0453 ,  H01J2237/0455 ,  H01J2237/0456 ,  H01J2237/0458

Abstract: A particle optical apparatus including an aperture plate for shaping a particle beam before the particle beam enters a monochromator filter assembly. The aperture plate has at least one aperture and is adjustable with respect to the monochromator filter assembly, in normal operating conditions, so that the size of the aperture used to shape the particle beam can be varied, and therefore the beam current entering the filter assembly can be varied.

Abstract translation: 一种粒子光学装置，包括用于在粒子束进入单色器过滤器组件之前成形粒子束的孔板。 孔板具有至少一个孔，并且在正常操作条件下可相对于单色仪滤光器组件可调节，使得用于成形粒子束的孔的尺寸可以改变，因此射入电流进入过滤组件 可以变化。

公开(公告)号：US5306920A

公开(公告)日：1994-04-26

申请号：US980062

申请日：1992-11-23

Applicant: Jerry S. King ,  Carl E. D'Acosta ,  Craig L. Jasper ,  Dan A. Banks

Inventor： Jerry S. King ,  Carl E. D'Acosta ,  Craig L. Jasper ,  Dan A. Banks

IPC: H01J37/05 ,  H01J37/09

CPC classification number: H01J37/09 ,  H01J37/05 ,  H01J2237/0455 ,  H01J2237/31701

Abstract: An ion implantation apparatus including a resolving aperture-shutter assembly (31) placed in the ion beam path (18). The resolving aperture-shutter assembly includes a movable shutter (34) and a shutter housing surrounding the movable shutter (34). Selected ions in an ion beam path (18) pass through a hole (44) in movable shutter (34) when the movable shutter (34) is in a first position, and are blocked by the solid surfaces when the movable shutter (34) is in a second position. The enclosure (32, 33, 39) completely surrounds the movable shutter (34). The enclosure (32, 33, 39) includes a first aperture (42) aligned with the ion beam path (18) for allowing the selected ions to enter the enclosure and a second aperture (41) aligned with the ion beam path (18) for allowing the selected ions to exit the enclosure after passing through the hole (44) in the movable shutter.

Abstract translation: 一种离子注入装置，包括放置在离子束路径（18）中的分辨孔径光阑组件（31）。 分辨孔径光阑组件包括活动快门（34）和围绕活动快门（34）的快门壳体。 当活动快门（34）处于第一位置时，离子束路径（18）中的选定离子通过活动快门（34）中的孔（44），并且当活动快门（34）被固定时被固体表面阻挡， 处于第二位置。 外壳（32,33,39）完全包围活动活门（34）。 外壳（32,33,39）包括与离子束路径（18）对准的用于允许所选择的离子进入外壳的第一孔（42）和与离子束路径（18）对准的第二孔（41） 用于允许所选择的离子在通过可移动快门中的孔（44）之后离开外壳。

公开(公告)号：US5216253A

公开(公告)日：1993-06-01

申请号：US780198

申请日：1991-10-22

Applicant: Hidemi Koike

Inventor： Hidemi Koike

IPC: C23C14/48 ,  H01J37/05 ,  H01J37/304 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/30472

Abstract: In an ion implantation apparatus, a first slit for limiting an ion beam width is provided between an ion source and a mass separation electromagnet. An accelerator is provided behind the mass separation electromagnet. A second slit for separating the ion beam is provided between a deflector provided behind the accelerator and a wafer. The slit widths of the first and second slits are controlled by a controller which monitors an ion source acceleration voltage, a magnetic field intensity of the mass separation electromagnet, an accelerator voltage, and a magnetic field intensity of the deflector, and control the slit widths of the first and second slits based on the monitored information.

Abstract translation: 在离子注入装置中，在离子源和质量分离电磁体之间设置用于限制离子束宽度的第一狭缝。 在质量分离电磁体之后设置加速器。 用于分离离子束的第二狭缝设置在设置在加速器后面的偏转器和晶片之间。 第一和第二狭缝的狭缝宽度由监视离子源加速电压，质量分离电磁体的磁场强度，加速器电压和偏转器的磁场强度的控制器控制，并且控制狭缝宽度 的第一和第二狭缝基于所监视的信息。

公开(公告)号：US5130552A

公开(公告)日：1992-07-14

申请号：US628795

申请日：1990-12-17

Applicant: Nicholas Bright ,  David R. Burgin ,  Timothy G. Morgan ,  Craig J. Lowrie ,  Hiroyuki Ito

Inventor： Nicholas Bright ,  David R. Burgin ,  Timothy G. Morgan ,  Craig J. Lowrie ,  Hiroyuki Ito

IPC: C23C14/48 ,  H01J37/05 ,  H01J37/09 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/05 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/31705

Abstract: An ion implantation system is modified to allow variation in the size of the aperture of the mass resolving system, thereby allowing more ions of one mass or ion of more than one mass, such as isotopes, to pass through said opening. Including all isotopes of the desired dopant ions to be collected increases beam current, and consequently the throughput of the implantation process, reduces contamination, and improves the dosage control.

公开(公告)号：US20230274922A1

公开(公告)日：2023-08-31

申请号：US18020017

申请日：2021-06-25

Applicant: SINGULUS TECHNOLOGIES AG

Inventor： Peter WEIPERT

IPC: H01J37/34 ,  C23C14/34

CPC classification number: H01J37/3447 ,  C23C14/3407 ,  H01J2237/0455 ,  H01J2237/0458

Abstract: The present invention relates to a slit diaphragm, a slit diaphragm system comprising at least two slit diaphragms arranged adjacent to each other and to a coating module and coating facility comprising a slit diaphragm.

公开(公告)号：US09576771B2

公开(公告)日：2017-02-21

申请号：US14996032

申请日：2016-01-14

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Kouji Inada ,  Kouji Kato

IPC: H01J37/09 ,  H01J37/08 ,  H01J37/304 ,  H01J37/317 ,  H01J37/04

CPC classification number: H01J37/304 ,  H01J37/04 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/08 ,  H01J2237/24535 ,  H01J2237/304 ,  H01J2237/30472 ,  H01J2237/31701

Abstract: A beam current adjuster for an ion implanter includes a variable aperture device which is disposed at an ion beam focus point or a vicinity thereof. The variable aperture device is configured to adjust an ion beam width in a direction perpendicular to an ion beam focusing direction at the focus point in order to control an implanting beam current. The variable aperture device may be disposed immediately downstream of a mass analysis slit. The beam current adjuster may be provided with a high energy ion implanter including a high energy multistage linear acceleration unit.

Abstract translation: 用于离子注入机的束流调节器包括设置在离子束聚焦点或其附近的可变孔径装置。 可变孔径装置被配置为在焦点处调整垂直于离子束聚焦方向的方向上的离子束宽度，以便控制注入束电流。 可变孔径装置可以紧靠质量分析狭缝的下游设置。 束电流调节器可以设置有包括高能多级线性加速单元的高能离子注入机。

公开(公告)号：US09496117B2

公开(公告)日：2016-11-15

申请号：US14158972

申请日：2014-01-20

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Jason M. Schaller ,  Robert B. Vopat

IPC: G21K1/04 ,  H01J37/05 ,  H01J37/317 ,  H01J37/09

CPC classification number: H01J37/05 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/057 ,  H01J2237/1501

Abstract: An adjustable mass-resolving slit assembly includes an aperture portion and an actuation portion. The aperture portion includes first and second shield members that define an aperture therebetween for receiving an ion beam during semiconductor processing operations. The actuation portion is coupled to the aperture portion and selectively and independently adjusts the position of the first and second shield members along first and second non-parallel axes. Adjusting the position of the first and second shield members along the first axis adjusts a width of the aperture. Adjusting the position of the first and second shield members along the second axis adjusts a region of the first and second shield members impinged by the ion beam. Methods for using the adjustable mass-resolving slit assembly are also disclosed.

Abstract translation: 可调节的质量分辨率狭缝组件包括孔部分和致动部分。 开口部分包括在半导体处理操作期间限定其间用于接收离子束的孔的第一和第二屏蔽构件。 致动部分联接到开口部分，并且选择性地和独立地调节第一和第二屏蔽部件沿第一和第二非平行轴线的位置。 沿着第一轴线调节第一和第二屏蔽件的位置调整孔径的宽度。 沿着第二轴调整第一和第二屏蔽构件的位置调节由离子束撞击的第一和第二屏蔽构件的区域。 还公开了使用可调节质量分辨率缝隙组件的方法。