Ion source and operation method thereof
    31.
    发明申请
    Ion source and operation method thereof 失效
    离子源及其操作方法

    公开(公告)号:US20010017353A1

    公开(公告)日:2001-08-30

    申请号:US09773664

    申请日:2001-02-02

    CPC classification number: H01J27/08

    Abstract: This ion source is set up to satisfy a relation L

    Abstract translation: 该离子源被设置为满足关系<段落lvl =“0”> L <3.37B-1 {平方根(VA)x10-6 其中 在等离子体生成容器2和灯丝8之间施加的电弧电压为VA [V],等离子体生成容器2内的磁场19的磁通密度为B [T],与最频繁电子 几乎位于灯丝8的尖端中心到等离子体生产容器2的壁面的发射点9为L [m]。

    Ion source for an ion beam arrangement
    32.
    发明授权
    Ion source for an ion beam arrangement 失效
    用于离子束布置的离子源

    公开(公告)号:US6087615A

    公开(公告)日:2000-07-11

    申请号:US117297

    申请日:1998-10-30

    Abstract: An ion source for large-area implantation of ions into a specimen comprises an anode, a cathode produced from the same material as that of the specimen towards which ions are emitted from the ion source, or coated with this material, or produced from a material which does not represent a contamination for the specimen, and a closed plasma chamber arranged between the anode and the cathode, the cathode comprises a multi-slot structure with juxtaposed slots which are separated by bars or plates, the ions passing through the multi-slot structure whereby a multi-band beam is produced, and a voltage for generating an electric field at right angles to the ion beam being applicable to the cathode or to subsequent multi-slot structures for extracting and accelerating the multi-band beam, the voltage being applied in such a way that the bars have different polarities.

    Abstract translation: PCT No.PCT / EP97 / 00319 Sec。 371日期:1998年10月30日 102(e)日期1998年10月30日PCT 1997年1月23日PCT PCT。 公开号WO97 / 27613 日期1997年7月31日用于大面积离子注入试样的离子源包括阳极,由与离子源从离子源发射的样品相同的材料产生的阴极或用该材料涂覆的阴极, 或由不表示样品污染的材料制成,以及布置在阳极和阴极之间的封闭等离子体室,阴极包括具有并列的狭槽的多槽结构,其间隔有条或板,离子通过 通过多槽结构,由此产生多波束束,并且产生与离子束成直角的电场的电压可应用于阴极或随后的多时隙结构用于提取和加速多频带 光束,以这样的方式施加电压,使得条具有不同的极性。

    Method of manufacturing semiconductor devices and apparatus therefor
    33.
    发明授权
    Method of manufacturing semiconductor devices and apparatus therefor 失效
    制造半导体器件的方法及其装置

    公开(公告)号:US6084241A

    公开(公告)日:2000-07-04

    申请号:US87699

    申请日:1998-06-01

    Inventor: Joseph W. Sitter

    CPC classification number: H01J27/08 H01J2237/081 H01J2237/31701

    Abstract: A method of manufacturing a semiconductor device includes creating ions in a chamber (201), using the ions to generate sputtered material from a target (241, 242) in the chamber (201), creating other ions from the sputtered material in the chamber (201), extracting the other ions out of the chamber (201), and implanting the other ions into the wafer (111).

    Abstract translation: 制造半导体器件的方法包括在室(201)中产生离子,使用离子从腔室(201)中的靶(241,242)产生溅射材料,从室中的溅射材料产生其它离子( 201),将其它离子从室(201)中取出,并将其它离子注入到晶片(111)中。

    Arc chamber for ion implanter
    34.
    发明授权
    Arc chamber for ion implanter 失效
    离子注入机电弧室

    公开(公告)号:US5892232A

    公开(公告)日:1999-04-06

    申请号:US735981

    申请日:1996-10-25

    CPC classification number: H01J27/08

    Abstract: An arc chamber including a reaction chamber, a filament element used to generate electrons, a first power supply means set for providing power to the filament element, a second power supply means utilized for creating a potential to increase the ionization efficiency, a plurality of gas injected openings set to inject suitable gas into the reaction chamber and be ionized in a gaseous plasma by impact from electrons, a first filament insulator, and three second filament insulators used for isolation. The first filament insulator includes a truncated corn portion and a ring portion. The truncated corn portion has a hole formed threrethrough itself. The ring portion is coaxially connected to the smaller surface of the truncated corn portion. The second filament insulator includes a truncated corn portion and two ring portions. Similarily, the truncated corn portion has a hole through formed therethrough. The ring portions are respectively coaxially connected to the two surfaces of the truncated corn portion. In the preferred embodiment, three first filament insulators and one second filament insulator are set on the filament element for isolation. The filament insulators are screwed into the filament element and exactly attached on the side wall of the reaction chamber.

    Abstract translation: 包括反应室,用于产生电子的灯丝元件的电弧室,用于向灯丝元件供电的第一电源装置,用于产生提高电离效率的电位的第二电源装置,多个气体 注入的开口设置成将合适的气体注入反应室,并通过来自电子的冲击,第一细丝绝缘体和用于隔离的三个第二长丝绝缘体在气态等离子体中离子化。 第一长丝绝缘体包括截顶玉米部分和环部分。 截断的玉米部分具有自身形成的孔。 环部分同轴连接到截顶玉米部分的较小表面。 第二长丝绝缘体包括截顶玉米部分和两个环部分。 类似地,截头玉米部分具有通过其形成的孔。 环部分别同轴地连接到截顶玉米部分的两个表面。 在优选实施例中,将三个第一灯丝绝缘体和一个第二灯丝绝缘体设置在灯丝元件上用于隔离。 灯丝绝缘子拧入灯丝元件并精确地附着在反应室的侧壁上。

    Ion implantation having increased source lifetime
    36.
    发明授权
    Ion implantation having increased source lifetime 失效
    离子注入具有增加的源寿命

    公开(公告)号:US5554852A

    公开(公告)日:1996-09-10

    申请号:US415978

    申请日:1995-04-03

    Abstract: Ion implantation equipment is modified so as to provide filament reflectors to a filament inside of an arc chamber, and to remove the electrical insulators for the filament outside of the arc chamber and providing a shield, thereby reducing the formation of a conductive layer on said insulators and greatly extending the lifetime and reducing downtime of the equipment. The efficiency of the equipment is further enhanced by an interchangeable liner for the arc chamber that increases the wall temperature of the arc chamber and thus the electron temperature. The use of tungsten parts inside the arc chamber, obtained either by making the arc chamber itself or portions thereof of tungsten, particularly the front plate having the exit aperture for the ion beam, or by inserting a removable tungsten liner therein, decreases contamination of the ion beam. Serviceability of the arc chamber is improved by using a unitary clamp that separately grips both the filament and filament reflectors. This clamp can also advantageously be made of tungsten.

    Abstract translation: 离子注入设备被修改以便为电弧室内的灯丝提供灯丝反射器,并且去除电弧室外的灯丝的电绝缘体并提供屏蔽,由此减少所述绝缘体上的导电层的形成 大大延长了使用寿命,减少了设备的停机时间。 通过用于电弧室的可互换的衬垫进一步提高了设备​​的效率,从而增加了电弧室的壁温,从而提高了电子温度。 通过使电弧室本身或其部分的钨,特别是具有用于离子束的出射孔的前板或通过在其中插入可移除的钨衬垫而获得的钨部件的使用减少了 离子束。 通过使用分开夹持灯丝和灯丝反射器的单一夹具来改善电弧室的可维护性。 该夹具还可以有利地由钨制成。

    Ion implantation apparatus
    37.
    发明授权
    Ion implantation apparatus 失效
    离子注入装置

    公开(公告)号:US5404017A

    公开(公告)日:1995-04-04

    申请号:US84145

    申请日:1993-07-01

    CPC classification number: H01J27/08 H01J37/3171 H01J2237/0822

    Abstract: An ion implantation apparatus is intended to perform the ion implantation for the desired surface of a target irrespective of the surface geometry thereof, and to simplify the structure. The apparatus includes a vacuum chamber, and a plurality of arc ion sources for emitting ion beams on the surface of the target disposed within the vacuum chamber. A plurality of arc ion source mounting openings are formed on the vacuum chamber. One or more of arc ion sources necessary for emitting ion beams on the desired surface of the target are airtightly mounted on the openings opposed to the above surface.

    Abstract translation: 离子注入装置旨在对靶的期望表面执行离子注入,而与其表面几何形状无关,并且简化结构。 该设备包括一个真空室和多个用于在设置在该真空室内的靶的表面上发射离子束的电弧离子源。 在真空室上形成多个电弧离子源安装孔。 在靶的期望表面上发射离子束所需的一个或多个电弧离子源气密地安装在与上述表面相对的开口上。

    Plasma generator and associated ionization method
    38.
    发明授权
    Plasma generator and associated ionization method 失效
    等离子发生器和相关电离法

    公开(公告)号:US5352954A

    公开(公告)日:1994-10-04

    申请号:US27403

    申请日:1993-03-08

    Inventor: Gianfranco Cirri

    CPC classification number: H01J27/08 H05H1/54

    Abstract: In the discharge chamber (21) of a device for generating plasma, used in the space sector for ion propulsion or for the discharging of satellites and in applications on the ground, suitable ionizing radiation sources (47) are provided, capable of improving the performance of said device. The radiation emitted by the sources creates constant ionization of the gas with advantages both during the preionization phase, i.e. starting of the device, and during the operating phase, standardizing the performance thereof in particular in terms of continuity and regularity of operation.

    Abstract translation: 在空间扇区用于离子推进或卫星放电和地面应用的用于产生等离子体的装置的放电室(21)中,提供合适的电离辐射源(47),能够提高性能 的所述装置。 由源产生的辐射产生恒定的气体离子化,其优点在于在预电离阶段即装置启动期间,以及在操作阶段期间特别是在连续性和操作规律方面使其性能标准化。

    Sputtering apparatus and an ion source
    39.
    发明授权
    Sputtering apparatus and an ion source 失效
    溅射装置和离子源

    公开(公告)号:US5288386A

    公开(公告)日:1994-02-22

    申请号:US913927

    申请日:1992-07-17

    Abstract: A sputtering apparatus including two electrodes, a sputtering target disposed on one of the electrodes, and a gas supply for supplying a discharge gas in a vacuum to produce an electric discharge between the two electrodes and whereby particles sputtered from the target due to impact thereon of ions produced by the discharge, are deposited on a substrate. The target disposed on one electrode is formed into an elongated band and the other electrode is disposed so as to enclose the target. The other electrode is also provided with a magnet for producing a magnetic field thereon, and further includes a narrow elongated slot which defines a narrow sputter particle outlet. The narrow sputter particle outlet permits a pressure to exist near the electrical discharge which is higher than the pressure near the substrate. According to a preferred embodiment, the sputtering apparatus has an ion source combined integrally therewith.

    Abstract translation: 一种溅射装置,包括两个电极,设置在一个电极上的溅射靶,以及用于在真空中供应放电气体以在两个电极之间产生放电的气体源,由此由于其上的冲击而从靶溅射的颗粒 通过放电产生的离子沉积在基底上。 设置在一个电极上的靶被形成为细长带,并且另一个电极被设置成包围靶。 另一个电极还设置有用于在其上产生磁场的磁体,并且还包括限定窄的溅射颗粒出口的窄的细长槽。 窄的溅射粒子出口允许在高于衬底附近的压力的放电附近存在压力。 根据优选实施例,溅射装置具有与其一体地组合的离子源。

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