公开(公告)号：US20140291543A1

公开(公告)日：2014-10-02

申请号：US14229038

申请日：2014-03-28

Applicant: SEN Corporation

Inventor： Masateru Sato ,  Hiroshi Matsushita

IPC: H01J37/08 ,  H01J37/317 ,  H01J37/30

CPC classification number: H01J37/3171 ,  H01J37/248 ,  H01J2237/032 ,  H01J2237/036 ,  H01J2237/038 ,  H01J2237/08

Abstract: An insulation structure of high voltage electrodes includes an insulator having an exposed surface and a conductor portion, which includes a joint region in contact with the insulator, and a heat-resistant portion provided, along at least part of an edge of the joint region, in such a manner as to be adjacent to the exposed surface of the insulator. The heat-resistant portion is formed of an electrically conductive material whose melting point is higher than that of the conductor portion. The heat-resistant portion may be so provided as to have a gap between the insulator and the exposed surface.

Abstract translation: 高电压电极的绝缘结构包括具有暴露表面的绝缘体和导体部分，导体部分包括与绝缘体接触的接合区域，以及沿着接合区域的边缘的至少一部分设置的耐热部分， 以与绝缘体的暴露表面相邻的方式。 耐热部由熔点高于导体部的导电性材料形成。 耐热部分可以设置成在绝缘体和暴露表面之间具有间隙。

公开(公告)号：US20140270055A1

公开(公告)日：2014-09-18

申请号：US14288753

申请日：2014-05-28

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Medical Systems Corporation

Inventor： Daizo OIKAWA ,  Fumio Ishiyama

IPC: H05G1/30 ,  A61B6/03

CPC classification number: H01J35/025 ,  A61B6/032 ,  A61B6/405 ,  A61B6/4241 ,  A61B6/54 ,  A61B6/542 ,  A61B6/58 ,  G05F1/10 ,  G05F1/565 ,  H01J37/241 ,  H01J37/248 ,  H01J37/3023 ,  H01J2237/2487 ,  H05G1/32 ,  H05G1/46

Abstract: X-ray CT apparatus is provided in which the photon energy distribution of X-rays to be radiated is flattened. X-ray CT apparatus includes an X-ray tube, a detector, a data acquisition system, a tube voltage generator, and a grid controller. The X-ray tube radiates X-rays onto a subject. The detector includes multiple detection elements for detecting photons forming the X-rays. The data acquisition system counts the number of the detected photons to acquire projection data based on the counted photons. The tube voltage generator applies the tube voltage to the X-ray tube while changing the tube voltage of the X-ray tube in a predetermined cycle. A tube current controller decreases the tube current upon an increase in the tube voltage, and increases the tube current upon a decrease in the tube voltage. Thus, the photon energy distribution of the X-rays radiated from the X-ray tube is flattened.

Abstract translation: 提供X射线CT装置，其中要辐射的X射线的光子能量分布变平。 X射线CT装置包括X射线管，检测器，数据采集系统，管电压发生器和电网控制器。 X射线管将X射线照射到被摄体上。 检测器包括用于检测形成X射线的光子的多个检测元件。 数据采集​​系统根据计数的光子计算检测到的光子数以获得投影数据。 管电压发生器将管电压施加到X射线管，同时以预定的周期改变X射线管的管电压。 管电流控制器在管电压增加时降低管电流，并且在管电压降低时增加管电流。 因此，从X射线管辐射的X射线的光子能量分布变平。

公开(公告)号：US20140099430A1

公开(公告)日：2014-04-10

申请号：US14033642

申请日：2013-09-23

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： William T. Levay ,  George M. Gammel ,  Bon-Woong Koo ,  Brant S. Binns ,  Richard M. White

IPC: C23C14/48

CPC classification number: C23C14/48 ,  C23C14/021 ,  C23C14/022 ,  C23C14/048 ,  C23C14/5826 ,  H01J37/241 ,  H01J37/243 ,  H01J37/248 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32935 ,  H01J2237/0206 ,  H01J2237/24535 ,  H01L2224/81913

Abstract: Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the ion source is increased, thereby creating a high density plasma, which is not extracted by the extraction electrodes. This plasma extends from the ion source chamber through the extraction aperture. Energetic ions then condition the extraction electrodes. In another embodiment, a plasma-assisted cleaning is performed. In this mode, the extraction electrodes are moved further from the ion source chamber, and a different source gas is used to create the plasma. In some embodiments, a combination of these modes is used to reduce glitches in the ion implanter.

Abstract translation: 描述了降低离子注入机内毛刺率的方法。 在一个实施例中，执行等离子体辅助调理，其中对提取电极的偏压被修改以便抑制离子束的形成。 提供给离子源中的等离子体发生器的功率增加，从而产生不被提取电极提取的高密度等离子体。 该等离子体从离子源室延伸穿过提取孔。 能量离子然后调节萃取电极。 在另一个实施例中，执行等离子体辅助清洁。 在该模式中，提取电极进一步从离子源室移动，并且使用不同的源气体来产生等离子体。 在一些实施例中，使用这些模式的组合来减少离子注入机中的毛刺。

公开(公告)号：US20120003760A1

公开(公告)日：2012-01-05

申请号：US13160573

申请日：2011-06-15

Applicant: Piotr Lubicki ,  Bon-Woong Koo

Inventor： Piotr Lubicki ,  Bon-Woong Koo

IPC: H01L21/66 ,  G21K5/00

CPC classification number: H01J37/241 ,  H01J37/243 ,  H01J37/248 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32935 ,  H01J2237/0206 ,  H01J2237/24535

Abstract: An ion implantation system and method are disclosed in which glitches in voltage are minimized by modifications to the power system of the implanter. These power supply modifications include faster response time, output filtering, improved glitch detection and removal of voltage blanking. By minimizing glitches, it is possible to produce solar cells with acceptable dose uniformity without having to pause the scan each time a voltage glitch is detected. For example, by shortening the duration of a voltage to about 20-40 milliseconds, dose uniformity within about 3% can be maintained.

Abstract translation: 公开了一种离子注入系统和方法，其中通过对注入机的电力系统的修改来最小化电压中的毛刺。 这些电源修改包括更快的响应时间，输出滤波，改进的毛刺检测和消除电压消隐。 通过最小化毛刺，可以在每次检测到电压毛刺时不必暂停扫描，生产具有可接受的剂量均匀性的太阳能电池。 例如，通过将电压的持续时间缩短到约20-40毫秒，可以保持约3％内的剂量均匀性。

公开(公告)号：US07655928B2

公开(公告)日：2010-02-02

申请号：US11693237

申请日：2007-03-29

Applicant: Kasegn D. Tekletsadik

Inventor： Kasegn D. Tekletsadik

IPC: H01J27/00 ,  H01J37/317 ,  H01J27/06 ,  H01J27/10 ,  G21F3/00 ,  A61N5/00

CPC classification number: H01J37/3171 ,  H01J5/46 ,  H01J37/248 ,  H01R13/53

Abstract: Ion accelerating devices including connection mechanisms with integrated shielding electrode and related methods are disclosed. According to an embodiment, an ion accelerating device of an ion implantation system comprises: a first element; a first connection system within the first element, the first connection system including a first connector and a first encapsulated shielding electrode around the first connector; and a second connection system within a second element other than the first element, the second connection system being coupled to the first connector; wherein the first encapsulated shielding electrode includes a first shielding portion adjacent to a first interface surface of the first element where the second connection system interfaces with the first element, in a cross-sectional view, the first shielding portion being substantially U-shaped.

Abstract translation: 公开了包括具有集成屏蔽电极的连接机构和相关方法的离子加速装置。 根据实施例，离子注入系统的离子加速装置包括：第一元件; 所述第一连接系统包括第一连接器和围绕所述第一连接器的第一封装屏蔽电极; 以及除了所述第一元件之外的第二元件内的第二连接系统，所述第二连接系统联接到所述第一连接器; 其中所述第一封装屏蔽电极包括与所述第一元件的第一接口表面相邻的第一屏蔽部分，其中所述第二连接系统与所述第一元件接合，在横截面图中，所述第一屏蔽部分基本上为U形。

公开(公告)号：US07569819B2

公开(公告)日：2009-08-04

申请号：US11873639

申请日：2007-10-17

Applicant: Norihisa Mori

Inventor： Norihisa Mori

IPC: H01J37/26

CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J37/244 ,  H01J37/248 ,  H01J2237/221 ,  H01J2237/225 ,  H01J2237/24465 ,  H01J2237/24475 ,  H01J2237/24495 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/24585 ,  H01J2237/2801

Abstract: An electron beam system (such as a scanning electron microscope or an electron probe microanalyzer) capable of displaying backscattered electron (BSE) images at the same brightness and same contrast at all times if the atomic number differences are the same when illumination conditions including accelerating voltage and emission current are varied or when the specimens are imaged with different instruments.

Abstract translation: 如果在包括加速电压的照射条件下原子序数差异相同时，能够一直显示相同亮度和相同对比度的背散射电子（BSE）图像的电子束系统（例如扫描电子显微镜或电子探针微量分析仪） 并且当使用不同的仪器对样本进行成像时，发射电流变化或变化。

公开(公告)号：US20080157681A1

公开(公告)日：2008-07-03

申请号：US11648979

申请日：2007-01-03

Applicant: Yongzhang Huang ,  Que Weiguo ,  Zhang Jincheng

Inventor： Yongzhang Huang ,  Que Weiguo ,  Zhang Jincheng

IPC: H05B37/00

CPC classification number: H01J37/248 ,  H01J37/045 ,  H01J37/3023 ,  H01J37/3171 ,  H01J2237/0206 ,  H01J2237/0213 ,  H01J2237/0432 ,  H01J2237/08

Abstract: The present invention is directed to a beam control circuit and method used to minimize particle contamination in an ion implantation system by reducing the duty factor of the ion beam. In one embodiment the beam control circuit comprises a,high voltage switch connected in series with a power supply and an ion source portion of the ion implantation system, wherein the switch is operable to interrupt or reestablish a connection between the power supply and an electrode of the ion source including electrodes for plasma production. The beam control circuit also comprises a switch controller operable to control the duty factor of the ion beam by controlling the switch to close before a start of ion implantation and to open after a completion of implantation or at other times when the beam is not needed, thereby minimizing beam duty and particle contamination. The beam control technique may be applied to wafer doping implantation and duty factor reduction. Protection circuits for the high voltage switch absorb energy from reactive components and clamp any overvoltages.

Abstract translation: 本发明涉及一种束控制电路和方法，用于通过降低离子束的占空比来最小化离子注入系统中的颗粒污染。 在一个实施例中，光束控制电路包括与电源和离子注入系统的离子源部分串联连接的高电压开关，其中开关可操作以中断或重新建立电源和电极之间的连接 离子源包括用于等离子体生产的电极。 光束控制电路还包括开关控制器，其可操作以通过在离子注入开始之前控制开关闭合并且在完成植入之后或在不需要光束的其他时间来控制离子束的占空因数， 从而最大程度地减少波束占空比和颗粒污染。 光束控制技术可以应用于晶片掺杂注入和占空因数降低。 高压开关的保护电路可以吸收反应性元件的能量并夹紧任何过电压。

公开(公告)号：US06746566B1

公开(公告)日：2004-06-08

申请号：US10114022

申请日：2002-03-29

Applicant: James Daniel Olson ,  Jeffery Scott Coffer

Inventor： James Daniel Olson ,  Jeffery Scott Coffer

IPC: C23F100

CPC classification number: H01J37/248 ,  H01J37/02 ,  H01J2237/0206

Abstract: A voltage-isolating passageway for providing high voltage isolation between a component maintained at high DC voltage and a component maintained at a substantially lower voltage is described. The voltage-isolating passageway incorporates a transverse magnetic field across its passageway, which reduces the potential energy of charged particles (e.g., electrons) passing through the passageway. The reduction in electron potential energy reduces the energy of collisions between electrons and molecules and therefore reducing the likelihood of avalanche ionization. The voltage-isolating passageway includes a passageway and at least two magnets. The passageway has two openings and the two magnets are positioned along opposite and exterior surfaces of the passageway wherein the first and second magnets impose a magnetic field in a transverse direction with respect to a lengthwise axis of the passageway. In addition, a semi-conductive coating can be applied to the interior passageway surface to help remove potential energy from the gas that comes in direct contact with the coating.

Abstract translation: 描述了一种用于在维持在高DC电压的部件和维持在基本上较低电压的部件之间提供高电压隔离的电压隔离通道。 电压隔离通道在其通道上包含横向磁场，这降低了通过通道的带电粒子（例如电子）的势能。 电子势能的减少降低了电子和分子之间碰撞的能量，从而降低了雪崩电离的可能性。 电压隔离通道包括通道和至少两个磁体。 通道具有两个开口，并且两个磁体沿着通道的相对和外表面定位，其中第一和第二磁体相对于通道的纵向轴在横向上施加磁场。 此外，半导电涂层可以施加到内部通道表面，以帮助消除与涂层直接接触的气体的潜在能量。

公开(公告)号：US6138054A

公开(公告)日：2000-10-24

申请号：US971895

申请日：1997-11-17

Applicant: Ching Tu On

Inventor： Ching Tu On

IPC: H01J37/248 ,  H01L21/00 ,  G06F19/00

CPC classification number: H01L21/67276 ,  H01J37/248 ,  H01L21/67253 ,  G05B2219/2214 ,  G05B2219/25197 ,  G05B2219/2602 ,  H01J2237/2482 ,  H01J2237/31701

Abstract: A semiconductor processing system, such as an ion implantation machine, includes a pair of controllers respectively disposed in high and low voltage areas of the machine, and interconnected by a fiber optic communication link. The controller located in the high voltage area employs a pair of computer processor units for respectively collecting the status of process parameters and control elements in the high voltage area, and for delivering control signals to controllable elements such as flow control valves. The controller in the low voltage area likewise employs a pair of computer processor units for generating control signals that are delivered via the fiber optic link to the first controller, and for receiving status signal information from the first controller. The fiber optic link provides high voltage isolation between the two controllers and reduces noise affecting signal accuracy.

Abstract translation: 诸如离子注入机的半导体处理系统包括分别设置在机器的高低压区域中的一对控制器，并且通过光纤通信链路互连。 位于高电压区域中的控制器采用一对计算机处理器单元，用于分别收集高压区域中的工艺参数和控制元件的状态，并将控制信号传送到诸如流量控制阀的可控元件。 低电压区域中的控制器同样采用一对计算机处理器单元，用于产生通过光纤链路传递到第一控制器的控制信号，并且用于从第一控制器接收状态信号信息。 光纤链路在两个控制器之间提供高电压隔离，并减少影响信号精度的噪声。

公开(公告)号：US5177402A

公开(公告)日：1993-01-05

申请号：US816981

申请日：1992-01-03

Applicant: Glen E. Howard ,  Mark A. Gesley

Inventor： Glen E. Howard ,  Mark A. Gesley

IPC: H01J37/06 ,  H01J37/08 ,  H01J37/24 ,  H01J37/248

CPC classification number: H01J37/248 ,  H01J37/241 ,  H01J2237/0206

Abstract: An arc suppressor is provided for an electron gun of the type used e.g. in semiconductor lithography equipment. The arc suppressor prevents damaging emission properties of the electron gun either due to variation of the cathode work function or any damage to the emitter apex. The arc suppressor includes a resistance and an inductor in series with each electrode lead providing voltage or current to the various electrodes of the electron gun. The inductance is provided by a ferrite toroid which contains a plurality of holes in addition to the main central hole. The leads for each electrode are wrapped around the toroid through the various holes, with one hole being provided for each lead. Thus advantageously each lead is isolated magnetically from the others, reducing the transformer and capacitive effects that couple one lead to another.