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    Electron microscope and sample observation method
    34.
    发明授权
    Electron microscope and sample observation method 有权

    公开(公告)号：US09754762B2

    公开(公告)日：2017-09-05

    申请号：US15322659

    申请日：2015-06-08

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Toshie Yaguchi ,  Hiroyuki Kobayashi ,  Takafumi Yotsuji

    IPC: H01J37/22 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28

    CPC classification number: H01J37/22 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28 ,  H01J37/295 ,  H01J2237/20207 ,  H01J2237/2802

    Abstract: Provided are a device and a method allowing a crystal orientation to be adjusted with adequate throughput and high precision to observe a sample, regardless of the type of the sample or the crystal orientation. In the present invention, the method comprises: setting a fitting circular pattern (26) displayed overlaid so that a main spot (23) is positioned on the circumference thereof, on the basis of the diffraction spot brightness distribution in an electron diffraction pattern (22b) displayed on a display unit (13); setting a vector (28) displayed with the starting point at the center position (27) of the displayed circular pattern (26), and the end point at the location of the main spot (23) positioned on the circumference of the circular pattern (26); and adjusting the crystal orientation on the basis of the orientation and the magnitude of the displayed vector (28).

    Method of investigating the wavefront of a charged-particle beam
    35.
    发明授权
    Method of investigating the wavefront of a charged-particle beam 有权
    调查带电粒子束波前的方法

    公开(公告)号：US09202670B2

    公开(公告)日：2015-12-01

    申请号：US14574179

    申请日：2014-12-17

    Applicant: FEI Company

    Inventor： Bart Jozef Janssen ,  Gijs van Duinen ,  Uwe Luecken ,  Ross Savage ,  Stephanus H.L. van den Boom ,  Ivan Lazic

    IPC: G21K5/04 ,  H01J37/28 ,  H01J37/26 ,  H01J37/20 ,  H01J37/244 ,  H01J37/295

    CPC classification number: H01J37/28 ,  H01J37/20 ,  H01J37/244 ,  H01J37/265 ,  H01J37/295 ,  H01J2237/12 ,  H01J2237/14 ,  H01J2237/226 ,  H01J2237/24507 ,  H01J2237/2614 ,  H01J2237/2802 ,  H01J2237/2806

    Abstract: A method of investigating a wavefront of a charged-particle beam that is directed from a source through an illuminator so as to traverse a sample plane and land upon a detector, an output of the detector being used in combination with a mathematical reconstruction technique so as to calculate at least one of phase information and amplitude information for the wavefront at a pre-defined location along its path to the detector, in which method: Said beam is caused to traverse a particle-optical lens system disposed between said sample plane and said detector; At a selected location in the path from said source to said detector, a modulator is used to locally produce a given modulation of the wavefront; In a series of measurement sessions, different such modulations are employed, and the associated detector outputs are collectively used in said mathematical reconstruction.

    Abstract translation: 一种调查带电粒子束的波前的方法，该波前从源通过照明器引导以遍历采样平面并落在检测器上，检测器的输出与数学重建技术结合使用，以便 沿着其到达检测器的路径的预定位置处计算波前的相位信息和幅度信息中的至少一个，其中：所述光束被穿过设置在所述样品平面和所述检测器之间的粒子 - 光学透镜系统 探测器; 在从所述源到所述检测器的路径中的选定位置处，使用调制器来本地产生波前的给定调制; 在一系列测量会话中，使用不同的这种调制，并且相关联的检测器输出在所述数学重建中被统一使用。

    METHOD FOR PREPARING AND ANALYZING AN OBJECT AS WELL AS PARTICLE BEAM DEVICE FOR PERFORMING THE METHOD
    36.
    发明申请
    METHOD FOR PREPARING AND ANALYZING AN OBJECT AS WELL AS PARTICLE BEAM DEVICE FOR PERFORMING THE METHOD 审中-公开
    用于准备和分析对象的方法，作为用于执行方法的粒子束装置

    公开(公告)号：US20150214004A1

    公开(公告)日：2015-07-30

    申请号：US14602459

    申请日：2015-01-22

    Applicant: Carl Zeiss Microscopy GmbH

    Inventor： Giuseppe Pavia

    IPC: H01J37/28 ,  H01J37/244 ,  H01J37/305 ,  H01J37/20

    CPC classification number: H01J37/28 ,  H01J37/20 ,  H01J37/295 ,  H01J37/3056 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/20221 ,  H01J2237/20285 ,  H01J2237/31745

    Abstract: A system and method are provided for preparing and analyzing an object having a region of interest. Material is removed from a first surface of the object using a second particle beam. The first surface is monitored using a first particle beam and a second detector. A second surface of the object is generated when the material is removed from the first surface. Material is removed from the second surface using the second particle beam, and the removal of the material is monitored using the first particle beam and the second detector. Removing the material generates a first side and a second side, and the region of interest is arranged between the first side and the second side. The first particle beam is guided to the first side, and first charged particles of the first particle beam being transmitted through the region of interest are detected using a first detector.

    Abstract translation: 提供了一种制备和分析具有感兴趣区域的物体的系统和方法。 使用第二粒子束从物体的第一表面去除材料。 使用第一粒子束和第二检测器监测第一表面。 当材料从第一表面移除时，产生物体的第二表面。 使用第二粒子束从第二表面去除材料，并且使用第一粒子束和第二检测器监测材料的去除。 移除材料产生第一侧和第二侧，并且感兴趣的区域被布置在第一侧和第二侧之间。 第一粒子束被引导到第一侧，并且使用第一检测器来检测通过感兴趣区域传输的第一粒子束的第一带电粒子。

    Electron beam interference device and electron beam interferometry
    37.
    发明授权
    Electron beam interference device and electron beam interferometry 有权
    电子束干涉装置和电子束干涉测量

    公开(公告)号：US08946628B2

    公开(公告)日：2015-02-03

    申请号：US13810934

    申请日：2012-02-03

    Applicant: Ken Harada ,  Hiroto Kasai

    Inventor： Ken Harada ,  Hiroto Kasai

    IPC: G01N23/00 ,  G21K7/00 ,  H01J37/252 ,  G01N23/04 ,  H01J37/26 ,  H01J37/147

    CPC classification number: H01J37/252 ,  G01N23/04 ,  H01J37/147 ,  H01J37/26 ,  H01J37/295 ,  H01J2237/221 ,  H01J2237/226 ,  H01J2237/2505

    Abstract: There is a limit in range and distance in which an electron beam can interfere and electron interference is implemented within a range of a coherence length. Therefore, interference images are consecutively recorded for each interference region width from an interference image of a reference wave and an observation region adjacent to the reference wave by considering that a phase distribution regenerated and observed by an interference microscopy is a differential between phase distributions of two waves used for interference and a differential image between phase distributions of a predetermined observation region and a predetermined reference wave is acquired by acquiring integrating phase distributions acquired by individually regenerating the interference images. This work enables a wide range of interference image which is more than a coherence length by arranging phase distribution images performed and acquired in the respective phase distributions in a predetermined order.

    Abstract translation: 电子束可能干扰的范围和距离有限制，并且在相干长度的范围内实现电子干扰。 因此，通过考虑到由干涉显微镜再生和观测到的相位分布是两相的相位分布之间的差分，从参考波的干涉图像和与参考波相邻的观察区域的每个干涉区域宽度连续记录干涉图像 通过获取通过单独再生干涉图像获得的积分相位分布来获取用于干扰的波和预定观察区域和预定参考波的相位分布之间的差分图像。 通过以预定的顺序排列在各个相位分布中执行和获取的相位分布图像，能够实现大于相干长度的宽范围的干涉图像。

    Sample structure analyzing method, transmission electron microscope, and computer-readable non-transitory recording medium
    38.
    发明授权
    Sample structure analyzing method, transmission electron microscope, and computer-readable non-transitory recording medium 有权
    样品结构分析方法，透射电子显微镜和计算机可读非瞬态记录介质

    公开(公告)号：US08841614B1

    公开(公告)日：2014-09-23

    申请号：US14106352

    申请日：2013-12-13

    Applicant: Kabushiki Kaisha Toshiba

    Inventor： Takeshi Murakami ,  Haruko Akutsu

    IPC: H01J37/26 ,  G01N23/20

    CPC classification number: G01N23/20058 ,  H01J37/222 ,  H01J37/295

    Abstract: In accordance with an embodiment, a sample structure analyzing method includes generating a beam and then applying the beam to a plurality of observation regions on a sample, and acquiring a plurality of diffraction images from the beam which has passed through the sample; and comparing the acquired diffraction images, and judging the difference between the observation regions from the comparison result, or identifying the grain boundary of crystal constituting the sample.

    Abstract translation: 根据实施例，样本结构分析方法包括产生一个束，然后将光束施加到样本上的多个观察区域，并从已经通过样本的束获取多个衍射图像; 比较所获取的衍射图像，根据比较结果判断观察区域之间的差异，或者识别构成样品的晶体的晶界。

    ON-CHIP THIN FILM ZERNIKE PHASE PLATE AND APPLICATIONS THEREOF
    39.
    发明申请
    ON-CHIP THIN FILM ZERNIKE PHASE PLATE AND APPLICATIONS THEREOF 有权
    片上薄膜ZERNIKE相板及其应用

    公开(公告)号：US20140166880A1

    公开(公告)日：2014-06-19

    申请号：US14107162

    申请日：2013-12-16

    Applicant: ACADEMIA SINICA

    Inventor： YUNN-SHIN SHIUE ,  PAI-CHIA KUO ,  CHIH-TING CHEN ,  YUH-LIN WANG ,  YONG-FEN HSIEH

    IPC: H01J37/26

    CPC classification number: H01J37/26 ,  H01J37/295 ,  H01J2237/2614 ,  Y10S977/881

    Abstract: The present invention provides an on-chip thin film phase plate for a releasing charging, comprising a chip substrate having one or more apertures; and a thin film layer attached to the top surface of the chip substrate. The present invention also provides a method for observing organic material by TEM, which uses the above-mentioned on-chip thin film phase plate in a TEM system.

    Abstract translation: 本发明提供了一种用于释放充电的片上薄膜相位板，包括具有一个或多个孔的芯片基板; 以及附着到芯片基板的顶表面的薄膜层。 本发明还提供了一种通过TEM观察有机材料的方法，其在TEM系统中使用上述片上薄膜相位板。

    Precession diffraction charged particle beam system
    40.
    发明授权
    Precession diffraction charged particle beam system 有权
    进动衍射带电粒子束系统

    公开(公告)号：US08541739B2

    公开(公告)日：2013-09-24

    申请号：US13190871

    申请日：2011-07-26

    Applicant: Gerd Benner ,  Harald Niebel

    Inventor： Gerd Benner ,  Harald Niebel

    IPC: G01N23/20 ,  G21K1/10

    CPC classification number: H01J37/295 ,  G01N23/20058

    Abstract: A charged particle beam system for performing precession diffraction includes a lens 11 for focusing a beam 5 in an object plane 9, and an objective lens 13 having a diffraction plane 27. A doublet 53 of lenses 35, 63 images the diffraction plane 27 into an intermediate diffraction plane 69 where a multipole 55 is located. A doublet 57 of lenses 65, 93 images the intermediate diffraction plane 69 into an intermediate diffraction plane 71 where a multipole 59 is located. A first deflection system 15 upstream of the object plane 9 can tilt to change an angle of incidence of the beam on the object plane. A second deflection system 37 between lenses 35 and 63 tilts the beam such that the change of the angle of incidence of the charged particle beam on the object plane is compensated.

    Abstract translation: 用于进行进动衍射的带电粒子束系统包括用于将光束5聚焦在物平面9中的透镜11和具有衍射平面27的物镜13.透镜35,63的双折射53将衍射平面27成像为 中间衍射平面69，其中多极55位于其中。 透镜65,93的双重透镜57将中间衍射平面69成像为多极59所在的中间衍射平面71。 在物平面9上游的第一偏转系统15可以倾斜以改变光束在物平面上的入射角。 透镜35和63之间的第二偏转系统37使光束倾斜，使得补偿了物体平面上的带电粒子束的入射角的变化。

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