公开(公告)号：US20190035601A1

公开(公告)日：2019-01-31

申请号：US16106083

申请日：2018-08-21

Applicant: Carl Zeiss SMT GmbH

Inventor： Michael Budach ,  Michael Schnell ,  Bernd Schindler ,  Markus Boese

IPC: H01J37/28 ,  H01J37/22 ,  G01Q30/02 ,  H01J37/02

Abstract: A method for examining a specimen surface with a probe of a scanning probe microscope, the specimen surface having an electrical potential distribution. The method includes (a) determining the electrical potential distribution of at least one first partial region of the specimen surface; and (b) modifying the electrical potential distribution in the at least one first partial region of the specimen surface and/or modifying an electrical potential of the probe of the scanning probe microscope before scanning at least one second partial region of the specimen surface.

公开(公告)号：US20190013232A1

公开(公告)日：2019-01-10

申请号：US16131822

申请日：2018-09-14

Applicant: LAM RESEARCH CORPORATION

Inventor： Haoquan YAN ,  Robert Griffith O'NEILL ,  Raphael CASAES ,  Jon MCCHESNEY ,  Alex PATERSON

IPC: H01L21/687 ,  H01J37/32 ,  H01J37/02 ,  H01L21/67 ,  H01J37/20

Abstract: An edge ring is configured to be raised and lowered relative to a pedestal, via one or more lift pins, in a processing chamber of a substrate processing system. The edge ring includes an upper surface, an annular inner diameter, an annular outer diameter, a lower surface, and at least one feature arranged in the lower surface of the edge ring. At least one inner surface of the at least one feature is sloped.

公开(公告)号：US10072334B2

公开(公告)日：2018-09-11

申请号：US15786358

申请日：2017-10-17

Applicant: KLA-Tencor Corporation ,  UChicago Argonne LLC

Inventor： William M. Tong ,  Alan D. Brodie ,  Jeffrey Elam ,  Anil Mane

IPC: H01J37/02 ,  C23C16/455 ,  C23C16/40 ,  C23C16/32 ,  C23C16/34 ,  H01J37/12 ,  H01J37/317 ,  B81B3/00

CPC classification number: C23C16/45529 ,  B81B3/0008 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/402 ,  C23C16/403 ,  C23C16/405 ,  H01J37/026 ,  H01J37/06 ,  H01J37/12 ,  H01J37/3174 ,  H01J2237/1205 ,  H01J2237/31794

Abstract: A digital pattern generator has a MEMS substrate with a plurality of doping layers and a plurality of insulating layers between respective doping layers. A plurality of lenslets are formed as holes through the substrate. A charge drain coating is applied to the inner surfaces of the lenslets. The charge drain coating drains electrons that come into contact with the charge drain coating so that the performance of the digital pattern generator will not be hindered by electron charge build-up. The charge drain coating includes a doping material that coalesces into clusters that are embedded within a high dielectric insulating material.

公开(公告)号：US20180236505A1

公开(公告)日：2018-08-23

申请号：US15963910

申请日：2018-04-26

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Marc SMITS ,  Johan Joost KONING ,  Chris Franciscus Jessica LODEWIJK ,  Hindrik Willem MOOK ,  Ludovic LATTARD

IPC: B08B7/04 ,  H01J37/317 ,  H01J37/18 ,  H01J37/02 ,  B08B17/02 ,  H01J37/147

CPC classification number: B08B7/04 ,  B08B17/02 ,  H01J37/02 ,  H01J37/1472 ,  H01J37/18 ,  H01J37/3177 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/0492

Abstract: A charged particle beam system is disclosed, comprising: a charged particle beam generator for generating a beam of charged particles; a charged particle optical column arranged in a vacuum chamber, wherein the charged particle optical column is arranged for projecting the beam of charged particles onto a target, and wherein the charged particle optical column comprises a charged particle optical element for influencing the beam of charged particles; a source for providing a cleaning agent; a conduit connected to the source and arranged for introducing the cleaning agent towards the charged particle optical element; wherein the charged particle optical element comprises: a charged particle transmitting aperture for transmitting and/or influencing the beam of charged particles, and at least one vent hole for providing a flow path between a first side and a second side of the charged particle optical element, wherein the vent hole has a cross section which is larger than a cross section of the charged particle transmitting aperture. Further, a method for preventing or removing contamination in the charged particle transmitting apertures is disclosed, comprising the step of introducing the cleaning agent while the beam generator is active.

公开(公告)号：US20180182656A1

公开(公告)日：2018-06-28

申请号：US15844729

申请日：2017-12-18

Applicant: Tokyo Electron Limited

Inventor： Masanori SATO

IPC: H01L21/683 ,  H01L21/66 ,  H01J37/32 ,  H01J37/02

Abstract: A measurement method includes vibrating a wafer through up-and-down movement of one or more pins supporting the wafer after performing processing with gas-based plasma generated through application of high-frequency electric power while the wafer, which is placed on a stage in a processing container, is electrostatically adhered by an electro-static chuck, calculating a residual charge amount of the wafer from an induced current flowing through an attracting electrode upon the vibrating of the wafer, and calculating a voltage to be applied to the attracting electrode in response to the calculated residual charge amount of the wafer.

公开(公告)号：US20180151325A1

公开(公告)日：2018-05-31

申请号：US15823176

申请日：2017-11-27

Applicant: APPLIED MATERIALS, INC.

Inventor： ADOLPH MILLER ALLEN ,  WILLIAM JOHANSON ,  VIACHSLAV BABAYAN ,  ZHONG QIANG HUA ,  CARL R. JOHNSON ,  VANESSA FAUNE ,  JINGJING LIU ,  VAIBHAV SONI ,  KIRANKUMAR SAVANDAIAH ,  SUNDARAPANDIAN RAMALINGA VIJAYALAKS REDDY

IPC: H01J37/02 ,  C23C14/34

CPC classification number: H01J37/026 ,  C23C14/34 ,  C23C14/351 ,  C23C14/564 ,  H01J37/32477 ,  H01J37/32642 ,  H01J37/32651

Abstract: Apparatus and methods for reducing and eliminating accumulation of excessive charged particles from substrate processing systems are provided herein. In some embodiments a process kit for a substrate process chamber includes: a cover ring having a body and a lip extending radially inward from the body, wherein the body has a bottom, a first wall, and a second wall, and wherein a first channel is formed between the second wall and the lip; a grounded shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first channel of the cover ring; and a bias power receiver coupled to the body and extending through an opening in the grounded shield.

公开(公告)号：US09881785B2

公开(公告)日：2018-01-30

申请号：US13783466

申请日：2013-03-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-geun Roh ,  Un-jeong Kim ,  Chang-won Lee

IPC: H01L21/02 ,  H01L21/263 ,  H01L21/28 ,  H01L21/311 ,  H01J37/02

CPC classification number: H01L21/02115 ,  H01J37/026 ,  H01J2237/0041 ,  H01L21/2633 ,  H01L21/28123 ,  H01L21/31105

Abstract: A method of preventing a charge accumulation in the manufacturing process of a semiconductor device is provided. The method includes: forming a material layer on a substrate; patterning (or processing) the material layer; and forming a graphene layer before patterning the material layer, wherein the graphene layer is formed on a surface of the material layer or on a surface of the substrate under the material layer. The substrate may be an insulation substrate. In addition, the substrate may have a stacked structure including a plurality of layers.

公开(公告)号：US09828676B2

公开(公告)日：2017-11-28

申请号：US15185177

申请日：2016-06-17

Applicant: SCREEN Semiconductor Solutions Co., Ltd.

Inventor： Masahiko Harumoto ,  Tadashi Miyagi ,  Yukihiko Inagaki ,  Koji Kaneyama

IPC: G03D5/00 ,  C23C16/56 ,  B05C11/00 ,  H01J37/02 ,  H01L21/033 ,  H01L21/67 ,  G03F7/00 ,  G03F7/16 ,  G03F7/30 ,  C23C16/02 ,  G03F7/20 ,  G03F7/32

CPC classification number: C23C16/56 ,  B05C11/00 ,  C23C16/0227 ,  G03F7/0002 ,  G03F7/162 ,  G03F7/20 ,  G03F7/3021 ,  G03F7/32 ,  H01J37/02 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/67115 ,  H01L21/67126 ,  H01L21/6715 ,  H01L21/67178

Abstract: An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

公开(公告)号：US20170097290A1

公开(公告)日：2017-04-06

申请号：US15286699

申请日：2016-10-06

Applicant: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

Inventor： Michael Krause ,  Georg Schusser ,  Thomas Höche ,  Richard Busch

IPC: G01N1/32 ,  G01N1/44 ,  H01J37/305 ,  H01J37/26 ,  H01J37/02

Abstract: A method of preparing a sample for microstructure diagnostics on a sample body by material-ablating processing, and subsequently producing an examination region on the sample portion, the examination region including a target region to be examined, the method including producing a terracing zone including the target region on at least one surface of the sample portion, wherein at least one notch with flanks extending obliquely in relation to the surface is produced next to the target region by material-ablating beam processing to produce the terracing zone, and ablating material from the surface of the sample portion in the region of the terracing zone by an ion beam, which is radiated under grazing incidence onto the surface obliquely to the direction of extent of the notch such that the target region lies behind the notch in the incoming radiation direction of the ion beam and, as a result of the terracing in the region behind the notch, the surface is recessed substantially parallel to the original height of the surface by way of ion beam processing.

公开(公告)号：US09613777B2

公开(公告)日：2017-04-04

申请号：US14484018

申请日：2014-09-11

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Alexandre Likhanskii ,  Svetlana B. Radovanov

IPC: H01J37/32 ,  H01J37/02 ,  H01J37/08

CPC classification number: H01J37/023 ,  H01J37/08 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174 ,  H01J2237/061 ,  H01J2237/0817

Abstract: A plasma chamber having improved plasma density is disclosed. The plasma chamber utilizes internal antennas. These internal antennas can be manipulated in a variety of ways to control the uniformity of the plasma density. In some embodiments, the conductive coil within the antenna is translated from a first location to a second location. For example, the entirety of the internal antennas may be translated within the plasma chamber. In another embodiment, the conductive coil disposed within the outer tube is translated relative to its outer tube. In another embodiment, the conductive coil within the outer tube may be bent and may be rotated within the outer tube. In another embodiment, the outer tube may also be bent and rotated. In other embodiments, ferromagnetic segments may be disposed in the outer tube to focus or block the electromagnetic energy emitted from the conductive coil.