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公开(公告)号:US11569062B2
公开(公告)日:2023-01-31
申请号:US16882053
申请日:2020-05-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Hom-Chung Lin , Jih-Churng Twu , Yi-Ting Chang , Chao-Po Lu , Tsung-Min Lin
IPC: H01J37/31 , H01J37/317 , H01J37/08 , H01J37/32
Abstract: An ion implantation system includes an ion implanter containing an ion source unit and a dopant source gas supply system. The system includes a dopant source gas storage tank inside a gas box container located remotely to the ion implanter and a dopant source gas supply pipe configured to supply a dopant source gas from the dopant source gas storage tank to the ion source unit. The dopant source gas supply pipe includes an inner pipe, an outer pipe enclosing the inner pipe, a first pipe adaptor coupled to first end of respective inner and outer pipes, and a second pipe adaptor coupled to seconds end of respective inner and outer pipes opposite the first end. The first pipe adaptor connects the inner pipe to the dopant source gas storage tank and the second pipe adaptor connects the inner pipe to the ion source unit.
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公开(公告)号:US20220399179A1
公开(公告)日:2022-12-15
申请号:US17805663
申请日:2022-06-06
Applicant: TECHINSIGHTS INC.
Inventor: Christopher PAWLOWICZ , Alexander SORKIN , Trevor Jason FRENCH , Ian JONES , Paul GAGNON
Abstract: Described are various embodiments of an ion beam chamber fluid delivery system and method for delivering a fluid onto a substrate in an ion beam system during operation. In one embodiment, the system comprises: a chamber comprising an ion beam gun oriented so as to cause ions to impinge the substrate, said chamber having a fluid delivery conduit therein for delivering the fluid into the chamber; a transferable substrate stage for holding the substrate, the transferable stage further configured to move between an operating position and a payload position during non-operation, said payload position for receiving and removing said substrate; and a fluid delivery nozzle being in a fixed location relative to the transferable stage, at least during operation, with an outlet position that is configured to deliver a fluid to a predetermined location on said transferable stage.
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公开(公告)号:US11527382B2
公开(公告)日:2022-12-13
申请号:US17356100
申请日:2021-06-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Hsing-Piao Hsu , Nai-Han Cheng , Ping-Chih Ou
IPC: H01J37/317 , C23C14/48 , H01J37/08 , F17C13/04
Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.
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公开(公告)号:US11527380B2
公开(公告)日:2022-12-13
申请号:US16837724
申请日:2020-04-01
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Ying-Chieh Meng , Chui-Ya Peng , Shih-Hao Lin
IPC: H01J37/32 , H01J37/317 , H01J37/08 , H01L21/265
Abstract: An ion implantation system including an ion implanter, a dopant source gas supply system and a monitoring system is provided. The ion implanter is inside a housing and includes an ion source unit. The dopant source gas supply system includes a first and a second dopant source gas storage cylinder in a gas cabinet outside of the housing and configured to supply a dopant source gas to the ion source unit, and a first and a second dopant source gas supply pipe coupled to respective first and second dopant source gas storage cylinders. Each of the first and second dopant source gas supply pipes includes an inner pipe and an outer pipe enclosing the inner pipe. The monitoring system is coupled to the outer pipe of each of the first and the second dopant source gas supply pipes.
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公开(公告)号:US11521822B2
公开(公告)日:2022-12-06
申请号:US17828312
申请日:2022-05-31
Applicant: CANON ANELVA CORPORATION
Inventor: Tsutomu Hiroishi
IPC: H01J37/08 , H01J37/305
Abstract: An ion gun including an anode, a cathode opposed to the anode and having a first portion and a second portion, and a magnet configured to form a magnetic field space between the first portion and the second portion. An annular gap including a linear portion and a curved portion is provided between the first portion and the second portion of the cathode. The magnet is configured to form, between the first portion and the second portion of the curved portion, a magnetic field line having a bottom inside a cross-sectional centerline of the gap.
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公开(公告)号:US20220359157A1
公开(公告)日:2022-11-10
申请号:US17737079
申请日:2022-05-05
Applicant: Malachite Technologies, Inc.
Inventor: Alexander David WELSH , Robert WEISS , David BROWN , Nicholas WHITE
IPC: H01J37/317 , H01J37/08
Abstract: A treatment system and process includes a ribbon beam ion source that is configured to implant ions into a product to modify a portion of the product; multiple means of controlling the temperature of the product; the means including radiative conduction, gas conduction to a heatsink by means of a gas cushion, adjustment of the ion beam density at the product, adjustment of the ion beam intensity at the product and ion beam acceleration parameters, and adjustment of the ion dose to the product b; and a product movement system configured to move the product through the treatment system past the ribbon beam ion source. The treatment system further includes a system controller configured to control at least one the following: the gas cushion system, the ribbon beam ion source, the temperature control system, the heatsink, and the product movement system.
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公开(公告)号:US11495430B2
公开(公告)日:2022-11-08
申请号:US16929626
申请日:2020-07-15
Applicant: Applied Materials, Inc.
Inventor: Jay R. Wallace , Costel Biloiu , Kevin M. Daniels
Abstract: An ion beam processing system including a plasma chamber, a plasma plate, disposed alongside the plasma chamber, the plasma plate defining a first extraction aperture, a beam blocker, disposed within the plasma chamber and facing the extraction aperture, a blocker electrode, disposed on a surface of the beam blocker outside of the plasma chamber, and an extraction electrode disposed on a surface of the plasma plate outside of the plasma chamber.
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公开(公告)号:US11487211B2
公开(公告)日:2022-11-01
申请号:US17116127
申请日:2020-12-09
Applicant: Carl Zeiss SMT GmbH
Inventor: Nicole Auth , Timo Luchs , Joachim Welte
IPC: G03F7/20 , H01J37/08 , H01J37/244
Abstract: The invention relates to a device and a method for processing a microstructured component, in particular for microlithography. A device for processing a microstructured component comprises an ion beam source for applying an ion beam to at least regions of the component, wherein an ion energy of this ion beam is no more than 5 keV, and a detector for detecting particles backscattered at the component.
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公开(公告)号:US20220333804A1
公开(公告)日:2022-10-20
申请号:US17722685
申请日:2022-04-18
Applicant: Carrier Corporation
Inventor: Huanan Li , Zhiwang Guo , Yan Yu , Xi Feng
Abstract: An ion generator, a fan coil unit and an air conditioning system. The ion generator includes: a power module; a negative plate connected to the power module; a ground plate spaced apart from a first side of the negative plate, the first side of the negative plate includes a plurality of plasma needles extending toward the ground plate; a positive plate spaced apart from a second side of the negative plate, the positive plate is connected to the power module and has a polarity opposite to that of the negative plate, and the respective sides of the negative plate and the positive plate that are facing toward each other are respectively provided with a plurality of carbon fiber brushes at corresponding positions.
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公开(公告)号:US20220301808A1
公开(公告)日:2022-09-22
申请号:US17836109
申请日:2022-06-09
Inventor: Syuta Ochi
IPC: H01J37/08 , H01J37/317 , H01J37/063 , H01J37/32
Abstract: An ion generator includes an arc chamber defining a plasma generation space, and a cathode which emits thermoelectrons toward the plasma generation space. The arc chamber includes a box-shaped main body having an opening, and a slit member mounted to cover the opening and provided with a front slit. An inner surface of the main body is exposed to the plasma generation space made of a refractory metal material. The slit member includes an inner member made of graphite and an outer member made of another refractory metal material. The outer member includes an outer surface exposed to an outside of the arc chamber. The inner member includes an inner surface exposed to the plasma generation space, and an opening portion which forms the front slit extending from the inner surface of the inner member to the outer surface of the outer member.
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