公开(公告)号：US20240339292A1

公开(公告)日：2024-10-10

申请号：US18748758

申请日：2024-06-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Yan REN ,  Marijke SCOTUZZI ,  Albertus Victor Gerardus MANGNUS ,  Erwin Paul SMAKMAN

IPC: H01J37/244 ,  H01J37/10 ,  H01J37/28

CPC classification number: H01J37/244 ,  H01J37/10 ,  H01J37/28

Abstract: There is provided a charged particle device for a charged particle inspection apparatus for projecting an array of sub-beams towards a sample, the charged particle device comprising: a charged particle optical element and a detector. The charged particle optical element has an up-beam surface having a plurality of openings to generate an array of sub-beams from a charged particle beam. In the charged particle optical element are defined: sub-beam apertures and monitoring apertures. The sub-beam aperture extend through the charged particle element for paths of the array of sub-beams towards a sample. The monitoring aperture extends through the charged particle element. The detector is in the monitoring aperture. At least part of the detector is down-beam of the up-beam surface. The detector measures a parameter of a portion of the charged particle beam incident on the detector.

公开(公告)号：US20240331971A1

公开(公告)日：2024-10-03

申请号：US18741204

申请日：2024-06-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Jurgen VAN SOEST ,  Vincent Sylvester KUIPER ,  Yinglong LI

IPC: H01J37/20 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/20 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/2001

Abstract: A charged particle assessment apparatus comprising: a charged particle beam device; an actuated sample stage; a hot component and a thermal compensator. The actuated sample stage is configured to hold a sample. The hot component is configured to operate such that, during operation, heat is radiated toward a sample held on the sample holder. The hot component is smaller than the sample. The thermal compensator is configured to heat the sample so as to reduce thermal gradients therein.

公开(公告)号：US20240331969A1

公开(公告)日：2024-10-03

申请号：US18193545

申请日：2023-03-30

Applicant: FEI Company

Inventor： Chad Rue

IPC: H01J37/20 ,  C23C14/14 ,  C23C14/34 ,  H01J37/28 ,  H01J37/305

CPC classification number: H01J37/20 ,  C23C14/14 ,  C23C14/3407 ,  H01J37/28 ,  H01J37/305 ,  H01J2237/081 ,  H01J2237/20214 ,  H01J2237/31749

Abstract: To reduce charging artifacts in electron microscopy, a notched ring of sputterable material can be situated about a sample surface. An ion beam can be directed through a notch at to sputter the sputterable material onto the sample surface. Sputtering can be performed after low-angle focused ion beam (FIB) milling at the same sample tilts. The sample can be rotated about an axis and sputtering performed at multiple rotation angles. Upon sputtering of the conductive coating, the sample can be reoriented and imaged. These steps can be repeated to produce a 2D image stack for 3D image reconstruction.

公开(公告)号：US20240321543A1

公开(公告)日：2024-09-26

申请号：US18572830

申请日：2021-07-01

Applicant: Hitachi High-Tech Corporation

Inventor： Hideyuki KOTSUJI ,  Toshiyuki YOKOSUKA ,  Hajime KAWANO

IPC: H01J37/02 ,  H01J37/20 ,  H01J37/24 ,  H01J37/28

CPC classification number: H01J37/026 ,  H01J37/20 ,  H01J37/24 ,  H01J37/28 ,  H01J2237/0044 ,  H01J2237/24564

Abstract: The present disclosure provides a charged particle beam device capable of removal or control of an electric charge by plasma without affecting control of the charged particle beam. The charged particle beam device according to the present disclosure is provided with a charged particle beam optical system for emitting a charged particle beam onto a sample, a sample chamber provided with a stage on which the sample is placed, a plasma generating device for generating plasma to be emitted onto the stage so as to remove an electrification charge from the sample, and a coupling member coupling the plasma generating device to the sample chamber, the coupling member including an insulating spacer insulating the sample chamber and the plasma generating device.

公开(公告)号：US20240312760A1

公开(公告)日：2024-09-19

申请号：US18606665

申请日：2024-03-15

Applicant: Carl Zeiss Microscopy GmbH

Inventor： Bjoern Gamm

IPC: H01J37/28 ,  H01J37/24

CPC classification number: H01J37/28 ,  H01J37/24

Abstract: In a method for operating a particle beam microscope, an image of an object region is generated by virtue of a particle beam being directed to a multiplicity of incidence locations within the object region. Particles are detected and a data record is generated. The data record represents the image by a field of pixels, with a position of the pixel in the field representing the incidence location and a pixel value of the pixel representing an intensity of the detected particles at the incidence location. In order to generate an image with an increased number of pixels, at least two images of the object region are generated in succession with a fewer number of pixels and the data records representing the at least two images are supplied to an image processing program which generates the data record representing the image with the greater number of pixels therefrom.

公开(公告)号：US20240312758A1

公开(公告)日：2024-09-19

申请号：US18571186

申请日：2022-05-30

Applicant: ASML Netherlands B.V. ,  HERMES MICROVISION CO. LTD. (BEIJING)

Inventor： Zheng FAN ,  Bruno LA FONTAINE ,  He Sheng LU ,  Gao Xing YIN ,  Shun ZHANG ,  Zhenfeng ZHAO

IPC: H01J37/24 ,  H01J37/065 ,  H01J37/28

CPC classification number: H01J37/243 ,  H01J37/065 ,  H01J37/28 ,  H01J2237/04735 ,  H01J2237/24535

Abstract: Apparatuses, systems, and methods for adjusting beam current using a feedback loop are provided. In some embodiments, a system may include a first anode aperture configured to measure a current of an emitted beam during inspection of a sample, wherein the first anode aperture is positioned in an environment that is configured to support a vacuum pressure of less than 3×10−10 torr and a controller including circuitry configured to cause the system to perform: generating a feedback signal when a difference between the measured current and a setpoint current exceeds a threshold value and adjusting a voltage of an extractor voltage supply based on the feedback signal during inspection of the sample such that a difference between an adjusted current of the emitted beam and the setpoint current is below the threshold value.

公开(公告)号：US12094684B1

公开(公告)日：2024-09-17

申请号：US16532459

申请日：2019-08-05

Applicant: Mochii, Inc.

Inventor： Christopher Su-Yan Own ,  Matthew Francis Murfitt

IPC: H01J37/28 ,  G01N23/2252 ,  H01J37/153 ,  H01J37/285

CPC classification number: H01J37/28 ,  G01N23/2252 ,  H01J37/153 ,  H01J37/285 ,  H01J2237/221 ,  H01J2237/2482 ,  H01J2237/2807

Abstract: A compact charged-particle-beam microscope, weighing less than about 50 kg and having a size of less than about 1 m×1 m×1 m, is provided for imaging a sample. The microscope has a vacuum chamber to maintain a low-pressure environment, a stage to hold a sample in the vacuum chamber, a charged-particle beam source to generate a charged-particle beam, charged-particle beam optics to converge the charged-particle beam onto the sample, and one or more beam scanners to scan the charged-particle beam across the sample. A charged-particle detector is provided to detect charged-particle radiation emanating from the sample and generate a corresponding charged-particle-detection signal. At least one energy dispersive x-ray spectrometer (EDS) is provided to detect x-rays emanating from the sample and generate a corresponding x-ray-detection signal. A controller analyzes the charged-particle-detection signal and the x-ray-detection signal to generate an image of the sample and a histogram of x-ray energies for at least a portion of the sample.

公开(公告)号：US12087541B2

公开(公告)日：2024-09-10

申请号：US17460381

申请日：2021-08-30

Applicant: ASML Netherlands B.V.

Inventor： Weiming Ren ,  Shuai Li ,  Xuedong Liu ,  Zhongwei Chen

IPC: H01J37/28 ,  H01J37/12 ,  H01J37/147

CPC classification number: H01J37/28 ,  H01J37/12 ,  H01J37/1472 ,  H01J37/1477 ,  H01J2237/04924 ,  H01J2237/083 ,  H01J2237/1205 ,  H01J2237/1516 ,  H01J2237/2817

Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots.

公开(公告)号：US20240282547A1

公开(公告)日：2024-08-22

申请号：US18647061

申请日：2024-04-26

Applicant: NuFlare Technology, Inc.

Inventor： Koichi ISHII ,  Atsushi ANDO

IPC: H01J37/153 ,  H01J37/147 ,  H01J37/244 ,  H01J37/28 ,  H01J37/317

CPC classification number: H01J37/153 ,  H01J37/1474 ,  H01J37/244 ,  H01J37/3177 ,  H01J37/28 ,  H01J2237/1501 ,  H01J2237/2448 ,  H01J2237/2817 ,  H01J2237/31776

Abstract: A multi-electron beam image acquisition apparatus includes a multiple primary electron beams forming device to form multiple primary electron beams, a first-deflector to scan the multiple-primary electron beams over a target object by deflecting the multiple-primary electron beams, a corrector to correct a beam-array-distribution-shape of multiple-secondary electron beams emitted from the target object irradiated with the multiple-primary electron beams, a second-deflector to deflect the multiple-secondary electron beams whose beam-array-distribution-shape has been corrected, a detector to detect the deflected multiple-secondary electron beams, and a deflection control circuit to control applying, to the second-deflector, a superimposed potential obtained by superimposing a deflection potential which cancels out a position movement of the multiple-secondary electron beams moved along with scanning the multiple-primary electron beams on a correction potential which corrects a distortion being generated due to correcting the beam-array-distribution-shape of the multiple-secondary electron beams and being dependent on a deflection amount for scanning.

公开(公告)号：US20240274396A1

公开(公告)日：2024-08-15

申请号：US18110284

申请日：2023-02-15

Applicant: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH

Inventor： John Breuer ,  Dominik Patrick Ehberger ,  Kathrin Mohler ,  Ivo Liska

IPC: H01J37/147 ,  H01J37/09 ,  H01J37/153 ,  H01J37/28

CPC classification number: H01J37/1472 ,  H01J37/09 ,  H01J37/153 ,  H01J37/28 ,  H01J2237/022 ,  H01J2237/1516 ,  H01J2237/1534 ,  H01J2237/24514

Abstract: A method of forming a multipole device (100) for influencing an electron beam (11) is provided. The method is carried out in an electron beam apparatus (200) that comprises an aperture body (110) having at least one aperture opening (112). The method comprises directing the electron beam (11) onto two or more surface portions of the aperture body (110) on two or more sides of the at least one aperture opening (112) to generate an electron beam-induced deposition pattern (120) configured to act as a multipole in a charged state, particularly configured to act as a quadrupole, a hexapole and/or an octupole. The electron beam-induced deposition pattern (120) can be an electron beam-induced carbon or carbonaceous pattern. Further provided are methods of influencing an electron beam in an electron beam apparatus, particularly with a multipole device as described herein. Further provided is a multipole device for influencing an electron beam in an electron beam apparatus in a predetermined manner.