公开(公告)号：US11114284B2

公开(公告)日：2021-09-07

申请号：US15630658

申请日：2017-06-22

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins ,  Michael R. Rice ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Kallol Bera

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an electrode assembly comprising a plurality of conductors spaced apart from and extending laterally across the workpiece support in a parallel coplanar array, a first RF power source to supply a first RF power to the electrode assembly, and a dielectric bottom plate between the electrode assembly and the workpiece support, the dielectric bottom plate providing an RF window between the electrode assembly and the plasma chamber.

公开(公告)号：US11043360B2

公开(公告)日：2021-06-22

申请号：US15414379

申请日：2017-01-24

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Michael R. Rice ,  Richard Charles Fovell ,  Vijay D. Parkhe

IPC: H01J37/32

Abstract: A gas distribution plate assembly for a processing chamber is provided that in one embodiment includes a body made of a metallic material, a base plate comprising a silicon infiltrated metal matrix composite coupled to the body, and a perforated faceplate comprising a silicon disk coupled to the base plate by a bond layer.

公开(公告)号：US10780447B2

公开(公告)日：2020-09-22

申请号：US15497814

申请日：2017-04-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Richard Fovell ,  Silverst Rodrigues ,  James D. Carducci

IPC: B05B1/24 ,  H01J37/32 ,  C23C16/455 ,  C23C16/44

Abstract: Apparatus for controlling thermal uniformity of a substrate-facing surface of a showerhead are provided herein. In some embodiments, a heat transfer system includes a heat transfer plate having a first diameter and a plurality of independent flow paths disposed within the heat transfer plate, each flow path having a first inlet and a first outlet; a supply conduit system having a second inlet fluidly coupled to a plurality of second outlets, wherein each second outlet is fluidly coupled to a corresponding first inlet of the heat transfer plate; and a return conduit system having a third outlet fluidly coupled to a plurality of third inlets, wherein each third inlet is fluidly coupled to a corresponding first outlet of the heat transfer plate, wherein the supply conduit system and the return conduit system are each disposed within an imaginary cylindrical projection above the heat transfer plate.

公开(公告)号：US20200035454A1

公开(公告)日：2020-01-30

申请号：US16595339

申请日：2019-10-07

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Leonid Dorf ,  Yang Yang

IPC: H01J37/32

Abstract: A method of etching uses an overhead electron beam source that generates an ion-ion plasma for performing an atomic layer etch process.

公开(公告)号：US10546728B2

公开(公告)日：2020-01-28

申请号：US15199046

申请日：2016-06-30

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, Jr. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

IPC: H01J37/32 ,  H05H1/46

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US10242847B2

公开(公告)日：2019-03-26

申请号：US14738324

申请日：2015-06-12

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Zhigang Chen ,  Shahid Rauf ,  Kenneth S. Collins

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32 ,  H01L21/67

Abstract: The invention discloses a plasma processing apparatus comprising a chamber lid, a chamber body and a support assembly. The chamber body, defining a processing volume for containing a plasma, for supporting the chamber lid. The chamber body is comprised of a chamber sidewall, a bottom wall and a liner assembly. The chamber sidewall and the bottom wall define a processing volume for containing a plasma. The liner assembly, disposed inside the processing volume, comprises of three or more slots formed thereon for providing an axial symmetric RF current path. The support assembly supports a substrate for processing within the chamber body. With the liner assembly with several symmetric slots, the present invention can prevent electromagnetic fields thereof from being azimuthal asymmetry.

公开(公告)号：US10131994B2

公开(公告)日：2018-11-20

申请号：US13666245

申请日：2012-11-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Shahid Rauf ,  James D. Carducci ,  Douglas A. Buchberger, Jr. ,  Ankur Agarwal ,  Jason A. Kenney ,  Leonid Dorf ,  Ajit Balakrishna ,  Richard Fovell

IPC: C23C16/00 ,  H01L21/306 ,  C23F1/08 ,  C23C14/28 ,  H01J37/32 ,  H05H1/46 ,  B01J12/00

Abstract: A plasma reactor for processing a workpiece includes a reactor chamber having a ceiling and a sidewall and a workpiece support facing the ceiling and defining a processing region, and a pair of concentric independently excited RF coil antennas overlying the ceiling and a side RF coil concentric with the side wall and facing the side wall below the ceiling, and being excited independently.

公开(公告)号：US09928987B2

公开(公告)日：2018-03-27

申请号：US13897592

申请日：2013-05-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Jason A. Kenney ,  James D. Carducci ,  Kenneth S. Collins ,  Richard Fovell ,  Kartik Ramaswamy ,  Shahid Rauf

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/04 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J37/04 ,  H01J37/321 ,  H01J37/3211 ,  H05H1/46 ,  H05H2001/4667

Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with RF feeds arranged in equilateral symmetry.

公开(公告)号：US20180053630A1

公开(公告)日：2018-02-22

申请号：US15793802

申请日：2017-10-25

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Igor Markovsky ,  Zhijang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32018 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32587 ,  H01J37/32596 ,  H01J37/3266 ,  H01J37/32715 ,  H01J37/32834

Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

公开(公告)号：US20170350018A1

公开(公告)日：2017-12-07

申请号：US15685787

申请日：2017-08-24

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Shahid Rauf ,  James D. Carducci ,  Douglas A. Buchberger ,  Ankur Agarwal ,  Jason A. Kenney ,  Leonid Dorf ,  Ajit Balakrishna ,  Richard Fovell

IPC: C23F1/08 ,  C23C14/28 ,  B01J12/00 ,  H05H1/46 ,  H01J37/32

CPC classification number: C23F1/08 ,  B01J12/002 ,  C23C14/28 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32733 ,  H01J37/32834 ,  H05H1/46

Abstract: A plasma reactor enclosure has a metallic portion and a dielectric portion of plural dielectric windows supported on the metallic portion, each of the dielectric windows extending around an axis of symmetry. Plural concentric coil antennas are disposed on an external side of the enclosure, respective ones of the coil antennas facing respective ones of the dielectric windows.