Ion implanting apparatus for manufacturing semiconductor devices
    41.
    发明授权
    Ion implanting apparatus for manufacturing semiconductor devices 失效
    用于制造半导体器件的离子注入装置

    公开(公告)号:US06737657B2

    公开(公告)日:2004-05-18

    申请号:US10608339

    申请日:2003-06-30

    Applicant: Sang-Kee Kim

    Inventor: Sang-Kee Kim

    Abstract: An ion implanting apparatus includes an analyzer unit for analyzing ions to be implanted into a wafer from among those ions in a beam produced by an ionization, a vacuum unit for producing a vacuum in the analyzer unit, a vacuum gauge for measuring the pressure inside the analyzer unit, and a shield for preventing a magnetic field employed by the analyzer unit from affecting the vacuum gauge. The shield has a plurality of magnetic field shielding plates encircling the vacuum gauge and dielectric material inserted between the magnetic shielding plates. The shield prevents the vacuum gauge from being influenced by the magnetic field generated by the analyzer unit. Therefore, the vacuum level inside the analyzer unit can be precisely measured.

    Abstract translation: 离子注入装置包括:分析器单元,用于分析从通过电离产生的光束中的那些离子中注入到晶片中的离子;分析器单元中产生真空的真空单元;用于测量内部的压力的真空计 分析器单元和用于防止分析器单元使用的磁场影响真空计的屏蔽。 屏蔽件具有环绕真空计的多个磁场屏蔽板和插在磁屏蔽板之间的电介质材料。 屏蔽层可防止真空计受到分析仪单元产生的磁场的影响。 因此,可以精确地测量分析器单元内的真空度。

    Active magnetic shielding
    42.
    发明申请
    Active magnetic shielding 失效
    主动磁屏蔽

    公开(公告)号:US20040026233A1

    公开(公告)日:2004-02-12

    申请号:US10215968

    申请日:2002-08-08

    Inventor: Mark A. Perrin

    CPC classification number: H01J37/3405 H01J2237/0264

    Abstract: Methods and apparatuses for shielding magnetic flux which is associated with a semiconductor fabrication system are provided. A magnetic shield assembly substantially surrounds a side wall of a plasma reactor. The shield assembly comprises a passive shield member in combination with an active shield member. As a result, effective shielding of magnetic flux can occur without excessive distortion of the magnetic field line pattern in the plasma region of the plasma reactor. In one aspect, the shield assembly comprises a first shield member adapted to attenuate a magnetic flux density. The first shield member is disposed in a parallel, spaced apart relationship from the side wall. A second member is attached to the first shield member and is constructed of a ferromagnetic material which is permanently magnetized.

    Abstract translation: 提供了与半导体制造系统相关联的用于屏蔽磁通量的方法和装置。 磁屏蔽组件基本上围绕等离子体反应器的侧壁。 屏蔽组件包括与主动屏蔽构件组合的无源屏蔽构件。 结果,可以在等离子体反应器的等离子体区域中的磁场线图案的过度变形的情况下发生磁通的有效屏蔽。 在一个方面,屏蔽组件包括适于衰减磁通密度的第一屏蔽构件。 第一屏蔽构件与侧壁以平行,间隔的关系设置。 第二构件附接到第一屏蔽构件,并且由永久磁化的铁磁材料构成。

    Magnetic shunt assembly for an exposure apparatus
    43.
    发明申请
    Magnetic shunt assembly for an exposure apparatus 失效
    用于曝光设备的磁分流器组件

    公开(公告)号:US20030102438A1

    公开(公告)日:2003-06-05

    申请号:US10000305

    申请日:2001-11-30

    CPC classification number: H01J37/09 H01J37/20 H01J2237/0264 H01J2237/31793

    Abstract: A magnetic shunt assembly (12) for an exposure apparatus (10) includes a magnetic shunt assembly (12). The apparatus (10) includes an optical assembly (24)(26), a stage (44), a first mover assembly (16) that moves the stage (44) in a first gap (37). The first mover assembly (16) is surrounded by a magnetic field. The magnetic shunt assembly (12) is positioned near the optical assembly (24)(26) approximately between the optical assembly (24)(26) and the mover assembly (16). The magnetic shunt assembly (12) is made of a material having a relatively high magnetic permeability. The magnetic shunt assembly (12) can provide a low magnetic reluctance path that redirects at least a portion of the magnetic field from the first mover assembly (16) away from the gap (37).

    Abstract translation: 用于曝光设备(10)的磁分路组件(12)包括磁分路组件(12)。 装置(10)包括光学组件(24),阶段(44),第一移动器组件(16),其在第一间隙(37)中移动平台(44)。 第一移动器组件(16)被磁场包围。 磁分路组件(12)位于光学组件(24)(26)附近,大致在光学组件(24)(26)和移动器组件(16)之间。 磁分路组件(12)由具有相对较高磁导率的材料制成。 磁分路组件(12)可以提供低磁阻磁路,其将来自第一移动器组件(16)的磁场的至少一部分重定向远离间隙(37)。

    Nano-Patterned System And Magnetic-Field Applying Device Thereof
    49.
    发明申请
    Nano-Patterned System And Magnetic-Field Applying Device Thereof 有权
    纳米图案系统及其磁场应用器件

    公开(公告)号:US20150123754A1

    公开(公告)日:2015-05-07

    申请号:US14389972

    申请日:2012-07-07

    Abstract: A nano-patterned system comprises a vacuum chamber, a sample stage and a magnetic-field applying device. The magnetic-field applying device comprises a power supply, magnetic poles, and a magnetic-field generation device having a magnetic conductive soft iron core and a coil connected to the power supply and wound on the soft iron core to generate a magnetic field. The soft iron core is a semi-closed frame structure and the magnetic poles are respectively disposed at the two ends of the semi-closed frame structure. The sample stage is inside the vacuum chamber. The magnetic poles are opposite one another inside the vacuum chamber with respect to the sample stage. The coil and soft iron core are outside the vacuum chamber. The soft iron core leads the magnetic field generated by the coil into the vacuum chamber. The magnetic poles locate a sample on the sample stage and apply a local magnetic field.

    Abstract translation: 纳米图案系统包括真空室,样品台和磁场施加装置。 磁场施加装置包括电源,磁极和具有导电软铁芯的磁场产生装置和连接到电源的线圈并缠绕在软铁芯上以产生磁场的磁场产生装置。 软铁芯是半封闭框架结构,磁极分别设置在半封闭框架结构的两端。 样品台位于真空室内。 磁极相对于样品台在真空室内彼此相对。 线圈和软铁芯在真空室外。 软铁芯将线圈产生的磁场引入真空室。 磁极将样品定位在样品台上并施加局部磁场。

    Vacuum deposition apparatus
    50.
    发明授权
    Vacuum deposition apparatus 有权
    真空沉积装置

    公开(公告)号:US09017534B2

    公开(公告)日:2015-04-28

    申请号:US13543330

    申请日:2012-07-06

    Abstract: Disclosed is a vacuum deposition apparatus which suppresses mutual interference of magnetic fields generated by multiple magnetic-field applying mechanisms for evaporation sources. The vacuum deposition apparatus includes a deposition chamber; a magnetic-field applying mechanism of sputtering evaporation source disposed in the deposition chamber; a magnetic-field applying mechanism of arc evaporation source disposed in the same deposition chamber; and magnetic-field shielding units arranged so as to cover partially or entirely at least one of these magnetic-field applying mechanisms for evaporation sources (preferably the magnetic-field applying mechanism of sputtering evaporation source). Portions (portions to face a target material upon dosing) of openable units of magnetic-field shielding units are preferably made from a non-magnetic material.

    Abstract translation: 公开了一种真空沉积装置,其抑制由用于蒸发源的多个磁场施加机构产生的磁场的相互干扰。 真空沉积设备包括沉积室; 设置在所述沉积室中的溅射蒸发源的磁场施加机构; 设置在同一沉积室中的电弧蒸发源的磁场施加机构; 以及磁场屏蔽单元,被布置成部分地或全部地覆盖这些用于蒸发源的磁场施加机构(优选地是溅射蒸发源的磁场施加机构)中的至少一个。 磁场屏蔽单元的可开启单元的部分(在计量时面向目标材料的部分)优选地由非磁性材料制成。

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