公开(公告)号：US20160372300A1

公开(公告)日：2016-12-22

申请号：US15244569

申请日：2016-08-23

Applicant: Liang Jie Wong ,  Byron Freelon ,  Timm Rohwer ,  Nuh Gedik ,  Steven Glenn Johnson

Inventor： Liang Jie Wong ,  Byron Freelon ,  Timm Rohwer ,  Nuh Gedik ,  Steven Glenn Johnson

IPC: H01J37/06

CPC classification number: H01J37/06 ,  H01J2237/047 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/063

Abstract: Methods and apparatus for modulating a particle pulse include a succession of Hermite-Gaussian optical modes that effectively construct a three-dimensional optical trap in the particle pulse's rest frame. Optical incidence angles between the propagation of the particle pulse and the optical pulse are tuned for improved compression. Particles pulses that can be modulated by these methods and apparatus include charged particles and particles with non-zero polarizability in the Rayleigh regime. Exact solutions to Maxwell's equations for first-order Hermite-Gaussian beams demonstrate single-electron pulse compression factors of more than 100 in both longitudinal and transverse dimensions. The methods and apparatus are useful in ultrafast electron imaging for both single- and multi-electron pulse compression, and as a means of circumventing temporal distortions in magnetic lenses when focusing ultra-short electron pulses.

Abstract translation: 用于调制粒子脉冲的方法和装置包括一系列Hermite-Gaussian光学模式，其有效地构成了粒子脉冲的休止帧中的三维光阱。 调整粒子脉冲的传播和光脉冲之间的光入射角以改善压缩。 可以通过这些方法和装置调制的粒子脉冲包括带电粒子和在瑞利状态下具有非零极化率的粒子。 针对一阶Hermite-Gaussian光束的麦克斯韦方程的精确解决方案在纵向和横向尺寸上均显示出超过100的单电子脉冲压缩因子。 该方法和装置在用于单电子和多电子脉冲压缩的超快电子成像中是有用的，并且作为在聚焦超短电子脉冲时避开磁性透镜中的时间失真的手段。

公开(公告)号：US20150371810A1

公开(公告)日：2015-12-24

申请号：US14765759

申请日：2014-02-05

Applicant: Massachusetts Institute of Technology

Inventor： Stephen Angelo Guerrera ,  Akintunde I. Akinwande

IPC: H01J37/073 ,  H01J37/317 ,  H01J37/30

CPC classification number: H01J37/073 ,  H01J37/065 ,  H01J37/3007 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0473 ,  H01J2237/063 ,  H01J2237/3175 ,  H01J2237/31781 ,  H01L21/00

Abstract: An electron beam apparatus is disclosed that includes a plurality of current source elements disposed in at least one field emitter array. Each current source element can be a gated vertical transistor, an ungated vertical transistor, or a current controlled channel that is proximate to an optically-modulated current source. The electron beam apparatus includes a plurality of field emitter tips, each field emitter tip of the plurality of field emitter tips being coupled to a current source element of the plurality of current source elements. The electron beam apparatus is configured to allow selective activation of one or more of the current source elements.

Abstract translation: 公开了一种电子束装置，其包括设置在至少一个场发射器阵列中的多个电流源元件。 每个电流源元件可以是门控垂直晶体管，非门控垂直晶体管或接近光调制电流源的电流控制通道。 电子束装置包括多个场发射器尖端，多个场发射器尖端中的每个场发射极尖端耦合到多个电流源元件的电流源元件。 电子束装置被配置为允许选择性地激活一个或多个电流源元件。

公开(公告)号：US09058959B2

公开(公告)日：2015-06-16

申请号：US14363252

申请日：2012-11-08

Applicant: Hitachi High-Technologies Corporation

Inventor： Yoshimi Kawanami ,  Yoichi Ose

IPC: H01J37/26 ,  H01J37/28 ,  H01J37/244 ,  H01J37/22 ,  H01J37/20

CPC classification number: H01J37/28 ,  H01J37/20 ,  H01J37/222 ,  H01J37/244 ,  H01J37/265 ,  H01J37/317 ,  H01J2237/0473 ,  H01J2237/0807 ,  H01J2237/2806 ,  H01J2237/2807

Abstract: The present invention is provided to enable a detailed inspection of a specimen and preventing a distortion of an observation image even when a specimen containing an insulating material is partially charged. For a scanning ion microscope utilizing a gas field ionization ion source, a thin film is disposed between an ion optical system and a specimen, and an ion beam is applied to and transmitted through this thin film in order to focus a neutralized beam on the specimen. Furthermore, an electrode for regulating secondary electrons discharged from this thin film is provided in order to eliminate mixing of noises into an observation image.

Abstract translation: 提供本发明，以便即使当含有绝缘材料的样本被部分充电时，也能够对样本进行详细检查并防止观察图像的变形。 对于使用气体电离离子源的扫描离子显微镜，在离子光学系统和样品之间设置薄膜，并且将离子束施加并透过该薄膜，以将中和的光束聚焦在样品上 。 此外，设置用于调节从该薄膜排出的二次电子的电极，以消除噪声对观察图像的混合。

公开(公告)号：US20150048247A1

公开(公告)日：2015-02-19

申请号：US14363252

申请日：2012-11-08

Applicant: Hitachi High-Technologies Corporation

Inventor： Yoshimi Kawanami ,  Yoichi Ose

IPC: H01J37/28 ,  H01J37/20 ,  H01J37/22 ,  H01J37/26 ,  H01J37/244

CPC classification number: H01J37/28 ,  H01J37/20 ,  H01J37/222 ,  H01J37/244 ,  H01J37/265 ,  H01J37/317 ,  H01J2237/0473 ,  H01J2237/0807 ,  H01J2237/2806 ,  H01J2237/2807

Abstract: The present invention is provided to enable a detailed inspection of a specimen and preventing a distortion of an observation image even when a specimen containing an insulating material is partially charged. For a scanning ion microscope utilizing a gas field ionization ion source, a thin film is disposed between an ion optical system and a specimen, and an ion beam is applied to and transmitted through this thin film in order to focus a neutralized beam on the specimen. Furthermore, an electrode for regulating secondary electrons discharged from this thin film is provided in order to eliminate mixing of noises into an observation image.

Abstract translation: 提供本发明，以便即使当含有绝缘材料的样本被部分充电时，也能够对样本进行详细检查并防止观察图像的变形。 对于使用气体电离离子源的扫描离子显微镜，在离子光学系统和样品之间设置薄膜，并且将离子束施加并透过该薄膜，以将中和的光束聚焦在样品上 。 此外，设置用于调节从该薄膜排出的二次电子的电极，以消除噪声对观察图像的混合。

公开(公告)号：US08957393B2

公开(公告)日：2015-02-17

申请号：US14451481

申请日：2014-08-05

Applicant: Mitsubishi Electric Corporation

Inventor： Takaaki Iwata

IPC: A61N5/10 ,  H01J37/147 ,  G21K5/04 ,  G06N3/02

CPC classification number: H01J37/147 ,  A61N5/10 ,  A61N5/1043 ,  A61N5/1048 ,  A61N5/1077 ,  A61N2005/1087 ,  G06N3/02 ,  G21H5/00 ,  G21K1/093 ,  G21K5/04 ,  H01J37/04 ,  H01J2237/0473

Abstract: A scanning power source that outputs the excitation current for a scanning electromagnet and an irradiation control apparatus that controls the scanning power source; the irradiation control apparatus is provided with a scanning electromagnet command value learning generator that evaluates the result of a run-through, which is a series of irradiation operations through a command value for the excitation current outputted from the scanning power source, that updates the command value for the excitation current, when the result of the evaluation does not satisfy a predetermined condition, so as to perform the run-through, and that outputs to the scanning power source the command value for the excitation current such that its evaluation result has satisfied the predetermined condition.

Abstract translation: 输出用于扫描电磁体的激励电流的扫描电源和控制扫描电源的照射控制装置; 照射控制装置设置有扫描电磁体指令值学习生成器，其通过用于从扫描电源输出的激励电流的命令值来评估作为一系列照射操作的通过结果，该命令值更新命令 励磁电流的值，当评估结果不满足预定条件时，进行贯通，并且向扫描电源输出使其评估结果满足的激励电流的指令值 预定条件。

公开(公告)号：US08933414B2

公开(公告)日：2015-01-13

申请号：US13779142

申请日：2013-02-27

Applicant: FEI Company

Inventor： Mostafa Maazouz

IPC: H01J37/05 ,  H01J49/10 ,  H01J49/26 ,  G01R31/305 ,  H01J37/04 ,  H01J3/02

CPC classification number: H01J37/07 ,  H01J3/026 ,  H01J37/04 ,  H01J37/06 ,  H01J37/10 ,  H01J37/1477 ,  H01J37/21 ,  H01J37/248 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/0473 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/1518 ,  H01J2237/1534 ,  H01J2237/28 ,  H01J2237/31749

Abstract: The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.

Abstract translation: 本发明提供了一种带电粒子束系统，其中聚焦离子束列的中间部分被偏压到高的负电压，允许光束以比该塔的该部分内的最终光束能量更高的电位移动。 在低kV电位下，像差和库仑相互作用减小，这导致光斑尺寸的显着改善。

公开(公告)号：US20150001391A1

公开(公告)日：2015-01-01

申请号：US13928815

申请日：2013-06-27

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Julian Blake

IPC: H01J37/317 ,  C23C14/22 ,  H01J49/06 ,  H01J37/32

CPC classification number: H01J37/3244 ,  C23C14/22 ,  C23C14/564 ,  C23C16/4404 ,  C23C16/50 ,  H01J37/3171 ,  H01J37/32477 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/028 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/057 ,  H01J2237/1207 ,  H01J2237/3321 ,  H01J2237/334

Abstract: Substrate processing systems, such as ion implantation systems, deposition systems and etch systems, having textured silicon liners are disclosed. The silicon liners are textured using a chemical treatment that produces small features, referred to as micropyramids, which may be less than 20 micrometers in height. Despite the fact that these micropyramids are much smaller than the textured features commonly found in graphite liners, the textured silicon is able to hold deposited coatings and resist flaking. Methods for performing preventative maintenance on these substrate processing systems are also disclosed.

Abstract translation: 公开了具有纹理硅衬垫的衬底处理系统，例如离子注入系统，沉积系统和蚀刻系统。 使用化学处理来形成硅衬里，该化学处理产生小的特征，称为微锥体，其高度可以小于20微米。 尽管这些微锥体比石墨衬垫中通常发现的纹理特征小得多，但纹理硅能够保持沉积的涂层并且抗剥落。 还公开了对这些基板处理系统进行预防性维护的方法。

公开(公告)号：US08735847B2

公开(公告)日：2014-05-27

申请号：US12277818

申请日：2008-11-25

Applicant: Helmut Banzhof ,  Juergen Frosien ,  Dieter Winkler

Inventor： Helmut Banzhof ,  Juergen Frosien ,  Dieter Winkler

IPC: G21K1/08

CPC classification number: H01J37/04 ,  H01J37/28 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0492 ,  H01J2237/08 ,  H01J2237/0807

Abstract: A method of operating a focused ion beam device having a gas field ion source is described. According to some embodiments, the method includes emitting an ion beam from a gas field ion source, providing an ion beam column ion beam energy in the ion beam column which is higher than the final beam energy, decelerating the ion beam for providing a final beam energy on impingement of the ion beam on the specimen of 1 keV to 4 keV, and imaging the specimen.

Abstract translation: 描述了具有气体场离子源的聚焦离子束装置的操作方法。 根据一些实施例，该方法包括从气体场离子源发射离子束，在离子束列中提供高于最终光束能量的离子束柱离子束能量，使离子束减速以提供最终光束 将离子束撞击在1keV至4keV的样品上的能量，并对样品进行成像。

公开(公告)号：US07609003B2

公开(公告)日：2009-10-27

申请号：US11365719

申请日：2006-03-01

Applicant: Thomas N. Horsky ,  Brian C. Cohen ,  Wade A. Krull ,  George P. Sacco, Jr.

Inventor： Thomas N. Horsky ,  Brian C. Cohen ,  Wade A. Krull ,  George P. Sacco, Jr.

IPC: H01J7/24

CPC classification number: H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L29/6659

Abstract: Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are maintained that produce a substantial ion density and limit the transverse kinetic energy of the ions to less than 0.7 eV; width of the ionization volume adjacent the aperture is limited to width less than about three times the width of the aperture; the aperture is extremely elongated; magnetic fields are avoided or limited; low ion beam noise is maintained; conditions within the ionization chamber are maintained that prevent formation of an arc discharge. With ion beam optics, such as the batch implanter of FIG. (20), or in serial implanters, ions from the ion source are transported to a target surface and implanted; advantageously, in some cases, in conjunction with acceleration-deceleration beam lines employing cluster ion beams. Also disclosed are electron gun constructions, ribbon sources for electrons and ionization chamber configurations. Forming features of semiconductor devices, e.g. drain extensions of CMOS devices, and doping of flat panels are shown.

Abstract translation: 具有高亮度的离子注入，通过电离气体或蒸气的离子束，例如， 通过与离子化室（80; 175）的出口孔（46,176）相邻的直接电子碰撞电离，产生二聚体或十硼烷。 优选地，维持产生大量离子密度并且将离子的横向动能限制在小于0.7eV的条件; 邻近孔径的电离体积的宽度被限制为小于孔的宽度的约三倍的宽度; 孔径非常细长; 避免或限制磁场; 保持低离子束噪声; 维持电离室内的条件，防止形成电弧放电。 使用离子束光学器件，例如图1的批量注入机。 （20）或串联注入器中，离子源的离子被输送到目标表面并植入; 有利地，在一些情况下，结合使用簇离子束的加速 - 减速束线。 还公开了电子枪结构，用于电子和电离室配置的带状源。 形成半导体器件的特征。 示出了CMOS器件的漏极延伸和平板的掺杂。

公开(公告)号：US20060238133A1

公开(公告)日：2006-10-26

申请号：US11365719

申请日：2006-03-01

Applicant: Thomas Horsky ,  Brian Cohen ,  Wade Krull ,  George Sacco

Inventor： Thomas Horsky ,  Brian Cohen ,  Wade Krull ,  George Sacco

IPC: H01J7/24

CPC classification number: H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L29/6659

Abstract: An ion source is disclosed that includes an ionization chamber having a restricted outlet aperture and configured so that the gas or vapor in the ionization chamber is at a pressure substantially higher than the pressure within an extraction region into which the ions are to be extracted external to the ionization chamber. The vapor is ionized by direct electron impact ionization by an electron source that is in a region adjacent the outlet aperture of the ionization chamber to produce ions from the molecules of the gas or vapor to a density of at least 1010 cm−3 at the aperture while maintaining conditions that limit the transverse kinetic energy of the ions to less than about 0.7 eV. The beam is transported to a target sure and the ions of the transported ion beam are implanted into the target.

Abstract translation: 公开了一种离子源，其包括具有受限制的出口孔的离子化室，并被构造成使得离子化室中的气体或蒸气的压力显着高于离子将被提取外部的萃取区域内的压力 电离室。 蒸汽通过电子源直接电离而电离，该电子源位于邻近离子化室的出口孔的区域，以产生从气体或蒸汽的分子到至少10×10 6的密度的离子， SUP> cm -3，同时保持将离子的横向动能限制在小于约0.7eV的条件。 将光束传输到目标物，并将被输送的离子束的离子注入目标物中。