公开(公告)号：US20110012034A1

公开(公告)日：2011-01-20

申请号：US12893687

申请日：2010-09-29

Applicant: Katsunari Nishikawa

Inventor： Katsunari Nishikawa

IPC: H01J37/08 ,  H01J37/317 ,  H01L21/02

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J37/3045 ,  H01J2237/024 ,  H01J2237/0458 ,  H01J2237/057 ,  H01J2237/24528 ,  H01J2237/24564 ,  H01J2237/24578

Abstract: The ion implantation apparatus includes a source head, an extraction electrode having a slit trough which a part of an ion beam outputted from the source head passes, a magnet for curving a trajectory of the ion beam passed through the slit, a target to be irradiated with the ion beam outputted from the magnet, an electric current measuring device facing an ion exit port of the source head through the slit of the extraction electrode, and a control portion for controlling a position of the extraction electrode based on a measured result of the current measuring device in a state that production of a magnetic field from the magnet is stopped.

Abstract translation: 离子注入装置包括源极头，具有从源极头输出的离子束的一部分通过的狭缝槽的引出电极，用于弯曲通过狭缝的离子束的轨迹的磁体，被照射的靶 离子束从磁体输出，电流测量装置通过引出电极的狭缝面对源极头的离子出口，以及控制部分，用于根据测量结果控制引出电极的位置 处于从磁体产生磁场的状态的电流测量装置停止。

公开(公告)号：US20110005461A1

公开(公告)日：2011-01-13

申请号：US12776132

申请日：2010-05-07

Applicant: Peter F. Vandermeulen

Inventor： Peter F. Vandermeulen

IPC: C23C16/511 ,  B01D59/44 ,  H05H1/46

CPC classification number: H01J37/32229 ,  C23C16/511 ,  C23C16/513 ,  H01J37/05 ,  H01J37/08 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32669 ,  H01J2237/057 ,  H01J2237/0817 ,  H01J2237/3323 ,  H01P3/12 ,  H01P3/127 ,  H01Q21/0043

Abstract: A plasma deposition apparatus includes a waveguide conduit having a plurality of slots therein. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of slots. One or more pipes have an outlet end positioned at each of the plurality of slots for transporting material from one or more material sources to the plurality of slots. The apparatus also includes a plasma chamber in communication with the waveguide tube through the plurality of slots. The plasma chamber receives through said plurality of slots microwaves from the waveguide tube and material to be melted or evaporated from the one or more pipes. The plasma chamber includes a plurality of magnets disposed in an outer wall of the plasma chamber for forming a magnetic field in the plasma chamber. The plasma chamber further includes one or more outlet openings for discharging plasma containing material to be deposited on a substrate.

Abstract translation: 等离子体沉积设备包括其中具有多个狭槽的波导管道。 波导管道耦合到微波源，用于从微波源通过多个狭槽传送微波。 一个或多个管道具有位于多个狭槽中的每一个的出口端，用于将材料从一个或多个材料源输送到多个狭槽。 该装置还包括通过多个狭槽与波导管连通的等离子体室。 等离子体腔室通过所述多个槽从波导管接收微波，并且从一个或多个管道熔化或蒸发的材料。 等离子体室包括设置在等离子体室的外壁中的多个磁体，用于在等离子体室中形成磁场。 等离子体室还包括一个或多个出口开口，用于排放待沉积在衬底上的等离子体材料。

公开(公告)号：US07851773B2

公开(公告)日：2010-12-14

申请号：US12301557

申请日：2007-06-13

Applicant: Hilton F. Glavish ,  Thomas N. Horsky ,  Dale C. Jacobson ,  Sami K. Hahto ,  Masao Naito ,  Nobuo Nagai ,  Nariaki Hamamoto

Inventor： Hilton F. Glavish ,  Thomas N. Horsky ,  Dale C. Jacobson ,  Sami K. Hahto ,  Masao Naito ,  Nobuo Nagai ,  Nariaki Hamamoto

IPC: H01J37/317 ,  H01J37/28 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/09 ,  H01J2237/0044 ,  H01J2237/0455 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/057 ,  H01J2237/14 ,  H01J2237/30477 ,  H01J2237/31703 ,  H01L21/26513

Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line.

Abstract translation: 一种多用途离子注入机束线配置，包括质量分析器磁体，随后是磁扫描器和磁准直器组合，其将弯曲引入到光束路径，所述束线被构造用于使得能够注入常见的单原子掺杂离子种类簇离子，所述束线配置具有 质量分析器磁体限定磁体的铁磁极之间的相当宽度的磁极间隙和质量选择孔，分析器磁体的尺寸设计成接受来自至少约80mm高度的槽形离子源提取孔的离子束，并且在 至少约7mm的宽度，并且在对应于梁的宽度的平面中的质量选择孔处产生分散体，质量选择孔能够被设定为质量选择宽度，该质量选择宽度的尺寸被选择为选择聚集离子的束 相同的掺杂物种类但递增不同的分子量，质量选择孔径也能够基本上被设定 较窄的质量选择宽度和具有质量选择孔径的分辨率的分析器磁体足以能够选择基本上单个原子或分子量的单原子掺杂离子束，磁扫描器和磁准直器被构造为连续弯曲离子 在相同意义上的光束，其与由光束线的分析器磁体引入的弯曲的方向相反。

公开(公告)号：US07800082B2

公开(公告)日：2010-09-21

申请号：US11276128

申请日：2006-02-15

Applicant: Peter L. Kellerman ,  Keneth H. Purser

Inventor： Peter L. Kellerman ,  Keneth H. Purser

IPC: H01J37/317

CPC classification number: H01J37/05 ,  H01J37/141 ,  H01J37/1472 ,  H01J37/3171 ,  H01J2237/0042 ,  H01J2237/057 ,  H01J2237/141 ,  H01J2237/142 ,  H01J2237/1508 ,  H01J2237/152 ,  H01J2237/31701 ,  H01J2237/31705

Abstract: An electromagnet and related ion implanter system including active field containment are disclosed. The electromagnet provides a dipole magnetic field within a tall, large gap with minimum distortion and degradation of strength. In one embodiment, an electromagnet for modifying an ion beam includes: a ferromagnetic box structure including six sides; an opening in each of a first side and a second opposing side of the ferromagnetic box structure for passage of the ion beam therethrough; and a plurality of current-carrying wires having a path along an inner surface of the ferromagnetic box structure, the inner surface including the first side and the second opposing side and a third side and a fourth opposing side, wherein the plurality of current-carrying wires are positioned to pass around each of the openings of the first and second opposing sides.

Abstract translation: 公开了一种包括活性场容纳的电磁体和相关离子注入机系统。 电磁铁在高大的间隙内提供偶极磁场，具有最小的变形和强度的降低。 在一个实施例中，用于修改离子束的电磁体包括：包括六个边的铁磁盒结构; 所述铁磁盒结构的第一侧和第二相对侧中的每一个中的开口用于使所述离子束通过其中; 以及多个载流线，其具有沿铁磁箱结构的内表面的路径，内表面包括第一侧和第二相对侧，以及第三侧和第四相对侧，其中多个载流 电线定位成绕过第一和第二相对侧的每个开口。

公开(公告)号：US07745783B2

公开(公告)日：2010-06-29

申请号：US12153455

申请日：2008-05-20

Applicant: Stephan Uhlemann

Inventor： Stephan Uhlemann

IPC: G21K1/06 ,  G21K5/02

CPC classification number: H01J37/153 ,  H01J37/05 ,  H01J37/26 ,  H01J49/48 ,  H01J2237/057 ,  H01J2237/1534 ,  H01J2237/1538

Abstract: A monochromator (1) for a charged particle optics, in particular, for electron microscopy, comprises at least one first deflection element (2, 3) with an electrostatic deflecting field (2′, 3′) for generating a dispersion (4) in the plane (5) of a selection aperture (6) to select charged particles of a desired energy interval (7) and at least one second deflection element (8, 9) with an electrostatic deflecting field (8′, 9′) which eliminates the dispersion (4) of the at least one first deflecting field (2′, 3′). A radiation source (17) comprises such a monochromator (1). High monchromatism without intensity contrasts caused by defects of the slit aperture is thereby achieved in that the deflection elements (2, 3, 8, 9) have a design other than spherically shaped and their electrodes (24, 25) are given a potential (φ+, φ−) such that the charged particles (xα, yβ) which virtually enter the image of the radiation source (17) at different respective angles (α, β) in different sections (x, y), are differently focused such that charged particles (xα, yβ) of one energy are point focused (10, 10′, 10″) exclusively in the plane (5) of the selection aperture (6), since zero-crossings (11, 12) of the deflections (A) of the charged particles (xα, yβ) of the different sections (x, y) only coincide there at the same axial position (z, E).

Abstract translation: 用于带电粒子光学器件的单色仪（1），特别是用于电子显微镜的装置包括至少一个具有用于产生分散体（4）的静电偏转场（2'，3'）的第一偏转元件（2,3） 选择孔径（6）的平面（5）以选择具有期望能量间隔（7）的带电粒子和至少一个具有静电偏转场（8'，9'）的第二偏转元件（8,9） 所述至少一个第一偏转场（2'，3'）的色散（4）。 辐射源（17）包括这样的单色仪（1）。 因此，由于偏转元件（2,3,8,9）具有除球形之外的设计，并且它们的电极（24,25）被赋予电位（＆phgr），因此实现了由狭缝孔径的缺陷引起的没有强度对比度的高单色差 ; +，＆phgr; - ），使得实际上在不同部分（x，y）中以不同的各个角度（α，＆bgr））进入辐射源（17）的图像的带电粒子（xα，y和bgr） 不同的聚焦使得一个能量的带电粒子（xα，y和bgr）专门在选择孔径（6）的平面（5）中点聚焦（10,10'，10“），因为过零点（11,12 不同部分（x，y）的带电粒子（xα，y＆bgr）的偏转（A）的位移仅在相同的轴向位置（z，E）处重合。

公开(公告)号：US07675050B2

公开(公告)日：2010-03-09

申请号：US11759876

申请日：2007-06-07

Applicant: Jiong Chen

Inventor： Jiong Chen

IPC: H01J37/317 ,  H01J37/28

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/08 ,  H01J37/1472 ,  H01J2237/04756 ,  H01J2237/057 ,  H01J2237/083 ,  H01J2237/1503 ,  H01J2237/201 ,  H01J2237/20221 ,  H01J2237/30472 ,  H01J2237/31701

Abstract: An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.

Abstract translation: 公开了一种具有多种工作模式的离子注入装置。 离子注入装置具有离子源和用于从其提取带状离子束的离子提取装置。 离子注入装置包括用于选择具有特定质荷比的离子的磁分析器，以通过质量狭缝投影到基底上。 提供多极镜头以控制光束的均匀性和准直。 公开了一种二路光束线，其中第二路径包括并入能量过滤的减速或加速系统。 最后，公开了离子注入的方法，其中注入模式可以从目标的一维扫描切换到二维扫描。

公开(公告)号：US20100051805A1

公开(公告)日：2010-03-04

申请号：US12548764

申请日：2009-08-27

Applicant: FHM-Faridur Rahman ,  Louis S. Farkas, III ,  John A. Notte, IV

Inventor： FHM-Faridur Rahman ,  Louis S. Farkas, III ,  John A. Notte, IV

IPC: G01N23/00 ,  G21K5/00

CPC classification number: H01J37/28 ,  H01J37/05 ,  H01J37/08 ,  H01J37/265 ,  H01J2237/057 ,  H01J2237/0807 ,  H01J2237/24514

Abstract: Ion microscope methods and systems are disclosed. In general, the systems and methods provide high ion beam stability.

Abstract translation: 公开了离子显微镜的方法和系统。 通常，这些系统和方法提供了高离子束稳定性。

公开(公告)号：US20090218506A1

公开(公告)日：2009-09-03

申请号：US11996701

申请日：2006-07-24

Applicant: Mamoru Nakasuji ,  Takeshi Murakami ,  Tohru Satake ,  Tsutomu Karimata ,  Toshifumi Kimba ,  Matsutaro Miyamoto ,  Hiroshi Sobukawa ,  Satoshi Mori

Inventor： Mamoru Nakasuji ,  Takeshi Murakami ,  Tohru Satake ,  Tsutomu Karimata ,  Toshifumi Kimba ,  Matsutaro Miyamoto ,  Hiroshi Sobukawa ,  Satoshi Mori

IPC: H01J1/50 ,  A61N5/00 ,  H01J3/14

CPC classification number: H01J37/05 ,  H01J37/147 ,  H01J37/153 ,  H01J37/26 ,  H01J2237/057

Abstract: An electron beam emitted from an electron gun (G) forms a reduced image on a sample (S) through a non-dispersion Wien-filter (5-1), an electromagnetic deflector (11-1), a beam separator (12-1), and a tablet lens (17-1) as an objective lens. The beam separator (12-1) is configured such that a distance by which a secondary electron beam passes through the beam separator is approximately three times longer than a distance by which a primary electron beam passes through the beam separator. Therefore, even if a magnetic field in the beam separator is set to deflect the primary electron beam by a small angle equal to or less than approximately 10 degrees, the secondary electron beam can be deflected by approximately 30 degrees, so that the primary and secondary electron beams are sufficiently separated. Also, since the primary electron beam is deflected by a small angle, less aberration occurs in the primary electron beam. Accordingly, since a light path length of a primary electro-optical system, it is possible to reduce the influence of space charge and the occurrence of deflection aberration.

Abstract translation: 从电子枪（G）发射的电子束通过非分散维恩滤波器（5-1），电磁偏转器（11-1），光束分离器（12- 1）和作为物镜的平板电脑镜头（17-1）。 束分离器（12-1）被构造成使得二次电子束通过分束器的距离比一次电子束通过分束器的距离大约三倍。 因此，即使将分束器中的磁场设定为使一次电子束偏转等于或小于约10度的小角度，二次电子束可以偏转大约30度，使得初级和次级 电子束充分分离。 此外，由于一次电子束以小角度偏转，所以在一次电子束中产生较小的像差。 因此，由于一次电光学系统的光路长度，可以减小空间电荷的影响和偏转像差的发生。

公开(公告)号：US20090206270A1

公开(公告)日：2009-08-20

申请号：US12300172

申请日：2007-06-13

Applicant: Hilton F. Glayish ,  Dale C. Jacobson ,  Sami K. Hahto ,  Thomas N. Horsky

Inventor： Hilton F. Glayish ,  Dale C. Jacobson ,  Sami K. Hahto ,  Thomas N. Horsky

IPC: H01J1/50 ,  H01J27/00 ,  A61N5/00

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/09 ,  H01J2237/0044 ,  H01J2237/0455 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/057 ,  H01J2237/14 ,  H01J2237/30477 ,  H01J2237/31703 ,  H01L21/26513

Abstract: A multipurpose ion implanter beam line configuration constructed for enabling implantation of common monatomic dopant ion species and cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept art ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight.

Abstract translation: 多用途离子注入器束线配置被构造用于使得能够注入常见的单原子掺杂剂离子种类和簇离子，该束线配置具有质量分析器磁体，该质量分析器磁体限定了磁体的铁磁极之间的相当宽度的极隙和质量选择孔， 分析器磁体的大小适于接受来自至少约80mm高度和至少约7mm宽度的槽形离子源提取孔的艺术离子束，并且在与质量选择孔的宽度相对应的平面中产生分散体 质量选择孔能够被设置为质量选择宽度，其尺寸被设计成选择相同掺杂物种类的簇离子的束，但递增地不同的分子量，质量选择孔也能够被设定为基本上更窄的质量 选择宽度和质量选择孔径处的分辨率足以能够选择光束的分析器磁体 单原子或分子量的单原子掺杂离子。

公开(公告)号：US07576339B2

公开(公告)日：2009-08-18

申请号：US11445542

申请日：2006-06-02

Applicant: Kyoung Bong Rouh ,  Seung Woo Jin ,  Min Yong Jung ,  Yong Soo Jung

Inventor： Kyoung Bong Rouh ,  Seung Woo Jin ,  Min Yong Jung ,  Yong Soo Jung

IPC: G21K5/10 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/04 ,  H01J37/3023 ,  H01J2237/057 ,  H01J2237/30483 ,  H01J2237/31703

Abstract: An ion implantation apparatus includes an ion beam source for generating an ion beam; an implantation energy controller disposed on a path of the ion beam for controlling the ion implantation energy of the ion beam so that an ion beam having a first implantation energy is created for a first period of time and an ion beam having a second implantation energy is created for a second period of time; a beam line for accelerating the ion beam; and an end station for mounting a substrate, into which the ion beam accelerated by the beam line is implanted onto the substrate.

Abstract translation: 离子注入装置包括用于产生离子束的离子束源; 植入能量控制器，设置在离子束的路径上，用于控制离子束的离子注入能量，使得具有第一注入能量的离子束产生第一时间段，并且具有第二注入能量的离子束是 创造了第二个时期; 用于加速离子束的束线; 以及用于安装衬底的终端站，其中通过射束线加速的离子束被注入到衬底上。