Abstract:
A metallurgic implantation apparatus of metal ions having a large emitting surface, a considerable flux and a controllable implantation depth comprises within an implantation chamber held in vacuo at least one vacuum arc ion source (1, 2, 3, 4) from which the ions (5) are extracted and projected onto a target plate (9) by means of an extraction and focusing electrode (6,7) and of an acceleration electrode (8) polarized at a very high and at a low voltage, respectively. The target plate (9) bombarded by the projection of ions emits a flux of secondary electrons, which are repelled by a suppression electrode (10) polarized negatively with respect to the target plate connected to ground.
Abstract:
A multimode ionization source includes a resistive filament aligned with an exit cone orifice. The filament generates electrons that bombard molecules near the orifice. In electron impact mode, a pressure regulator selects a low pressure within an ionization chamber and gaseous analyte is injected through a gas inlet and ionized by electron bombardment. In chemical ionization mode, an intermediate pressure of reagent gas established; electrons ionize the reagent gas. Gaseous analyte is introduced is ionized by the reagent gas through chemical interaction. In thermospray mode, a high pressure is established and heated liquid analyte is introduced into the chamber as a spray which is ionized by ion evaporation; in a thermospray/chemical ionization submode, filament activation supplements ion evaporation. Ions produced in all modes can be directed to a mass analyzer for analysis.
Abstract:
An ion-producing apparatus comprises an electron-producing vessel having an electron-producing chamber, an ion-producing vessel having an ion-producing chamber communicating with the electron-producing chamber, a cathode provided at one end of the electron-producing vessel, an accelerating electrode provided within the ion-producing chamber, for allowing passage of electrons, an anode provided between the cathode and the accelerating electrode, and a power supply circuit for providing a potential difference between the cathode and the anode, thereby to produce electrons in the gap between the cathode and the anode. A vacuum pump is provided for evacuating gas from the ion-producing chamber. A partition is provided within the electron-producing vessel, between the cathode and the anode to divide the electron-producing vessel into a cathode-side chamber and an anode-side chamber, and hinders a gas flow from the cathode-side chamber to the anode-side chamber to apply a pressure difference between both chambers.
Abstract:
An ion source of a type used on ion implanters which includes a crucible having a hollow interior and a hole for providing fluid communication between the interior of and exterior to the crucible. A heater assembly is used for adjustably heating the crucible. The crucible hole is if fluid communication with a passageway down the crucible and with a vapor nozzle aperture. An arc chamber has an inlet positioned at the output of the vapor nozzle aperture. The material to be vaporized does not bond to the crucible interior when solidified from a liquid state.
Abstract:
A technique for providing an ion beam of variable focussing (concentration) is described using a flexible grid for extracting and accelerating ions from an ion plasma. The grid is electrically conducting and will bow depending on a voltage difference between it and the ion plasma. This bowing of the grid from its initial planar configuration provides focussing of the ion beam. The amount of focussing depends upon the amount the grid is bowed, which in turn depends upon the voltage difference between it and the ion plasma. The same ion source/flexible grid combination can be used for different operations as for example, providing a collimated, low energy ion beam over a large area and then for providing a focussed ion beam of high energy onto a small area.
Abstract:
A gas is introduced into a discharge chamber of an ion source apparatus, and a gas discharge is performed between a thermionic cathode and an anode. Ions are extracted from the plasma formed in this gas discharge by a grid electrode. The thermionic cathode has a hollow cylindrical shape. A cathode chamber is defined by the thermionic cathode and a cylindrical partition wall supporting it. A columnar auxiliary electrode is coaxially inserted in the thermionic cathode. An A.C. voltage from a power source unit is supplied between the thermionic cathode and the auxiliary electrode such that effective power for keeping the thermionic cathode at a positive potential with respect to the auxiliary electrode is higher than that for keeping the auxiliary electrode at a positive potential with respect to the thermionic cathode.
Abstract:
A well-formed ion beam having a high current is extracted from an ion plasma by a low perveance ion extraction system including focus and extraction electrodes, the extraction electrode having an ion exit aperture and being axially spaced from the focus electrode a distance of at least several times the diameter of the ion exit aperture. A voltage differential is applied between the electrodes to define a plasma sheath at the ion source aperture, and the ion beam is extracted from the plasma sheath.
Abstract:
The accel electrode in a Kaufman-type of electron bombardment ion thrustor is created by interengaging panels of insulative material. These panels are angularly related to each other to define the openings of the accel electrode. Conductive blades are installed in each opening for electrostatic deflection of the beamlet issuing therethrough.