公开(公告)号：US20160189937A1

公开(公告)日：2016-06-30

申请号：US15060529

申请日：2016-03-03

Applicant: Lam Research Corporation

Inventor： John C. Valcore, JR. ,  Bradford J. Lyndaker

IPC: H01J37/32 ,  G01R19/25 ,  H03H7/40 ,  G01R29/08

CPC classification number: H01J37/32926 ,  G01R19/25 ,  G01R29/0892 ,  G06F17/5036 ,  H01J37/32183 ,  H01J37/32935 ,  H01J2237/327 ,  H01P3/00 ,  H03H7/40 ,  H05H1/46 ,  H05H2001/4682

Abstract: Systems and methods for determining a value of a variable on a radio frequency (RF) transmission model are described. One of the methods includes identifying a complex voltage and current measured at an output of an RF generator and generating an impedance matching model based on electrical components defined in an impedance matching circuit coupled to the RF generator. The method further includes propagating the complex voltage and current through the one or more elements from the input of the impedance matching model and through one or more elements of an RF transmission model portion that is coupled to the impedance matching model to determine a complex voltage and current at the output of the RF transmission model portion.

Abstract translation: 描述了用于确定射频（RF）传输模型上的变量的值的系统和方法。 方法之一包括识别在RF发生器的输出处测量的复合电压和电流，并且基于耦合到RF发生器的阻抗匹配电路中限定的电部件产生阻抗匹配模型。 该方法还包括通过耦合到阻抗匹配模型的RF传输模型部分的一个或多个元件传播来自阻抗匹配模型的输入端的一个或多个元件的复合电压和电流，以确定复合电压，以及 在RF传输模型部分的输出处的电流。

公开(公告)号：US20160165713A1

公开(公告)日：2016-06-09

申请号：US14904886

申请日：2014-03-12

Applicant: KYOSAN ELECTRIC MFG. CO., LTD.

Inventor： Itsuo Yuzurihara ,  Satoshi Aikawa ,  Ryosuke Ohma

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32926 ,  H05H2001/4645

Abstract: A high-frequency power supply device is provided with a plasma ignition step that supplies pulse power to ignite plasma, and drive power supply step to supply drive power for maintaining the plasma being generated. In the plasma ignition step, an ignition pulse being applied in an ignition pulse output operation is configured as including a main pulse that induces ignition, and a prepulse with lower power than the power of the main pulse and being applied at a stage prior to the main pulse. Since the ignition pulse is configured as including the main pulse and the prepulse, this enables protection of a high-frequency power source against reflected wave power, as well as reliably igniting the plasma.

Abstract translation: 高频电源装置设置有等离子体点火步骤，其提供脉冲功率以点燃等离子体，并且驱动供电步骤以提供用于维持正在产生的等离子体的驱动电力。 在等离子点火步骤中，在点火脉冲输出操作中施加的点火脉冲被构造为包括引起点火的主脉冲和具有比主脉冲功率低的功率的前脉冲，并且在 主脉冲 由于点火脉冲被构造为包括主脉冲和预脉冲，因此能够保护高频电源免受反射波功率以及可靠地点燃等离子体。

公开(公告)号：US20160126069A1

公开(公告)日：2016-05-05

申请号：US14796188

申请日：2015-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ohyung KWON ,  Namjun KANG ,  Doug-Yong SUNG ,  Jung-hyun CHO

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J7/24 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32926 ,  H01J2237/327 ,  H01J2237/334 ,  H05B31/26

Abstract: A pulse plasma apparatus includes a process chamber, source RF generator configured to supply first and second level RF pulse power having first and second duty cycles to an upper electrode of the process chamber, a reflected power indicator configured to indicate reflection RF power, a first matching network, and a controller. The first matching network is configured to match an impedance of the process chamber with an impedance of the source RF generator as a first or second matching capacitance value, respectively when the first level RF pulse power or second level RF pulse power is supplied, respectively. The controller is configured to calculate a third matching capacitance value based on the first and second matching capacitance values and a ratio of the first and second duty cycles, provide the third matching capacitance values to the first matching network, and control the source RF generator and first matching network.

Abstract translation: 脉冲等离子体装置包括处理室，源RF发生器，被配置为向处理室的上电极提供具有第一和第二占空比的第一和第二电平的RF脉冲功率，被配置为指示反射RF功率的反射功率指示器，第一 匹配网络和控制器。 当分别提供第一级RF脉冲功率或第二级RF脉冲功率时，第一匹配网络被配置为将处理室的阻抗与源RF发生器的阻抗分别匹配为第一或第二匹配电容值。 控制器被配置为基于第一和第二匹配电容值和第一和第二占空比的比率来计算第三匹配电容值，向第一匹配网络提供第三匹配电容值，并且控制源RF发生器和 第一匹配网络。

公开(公告)号：US20160118227A1

公开(公告)日：2016-04-28

申请号：US14521776

申请日：2014-10-23

Applicant: Lam Research Corporation

Inventor： John C. Valcore, Jr. ,  Henry Povolny

IPC: H01J37/32 ,  C23C16/505 ,  C23C16/52

CPC classification number: H01J37/32082 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32926

Abstract: Plasma processing systems and methods including a plasma processing chamber and an RF transmission path. The plasma processing chamber including an electrostatic chuck. The RF transmission path including one or more RF generators, a match circuit coupled the RF generator and an RF feed coupling the match circuit to the electrostatic chuck. The system also includes an RF return path coupled between the plasma processing chamber and the RF generator. A plasma processing system controller is coupled to the plasma processing chamber and the RF transmission path. The controller includes recipe logic for at least one plasma processing recipe including multiple plasma processing settings and an RF power compensation logic for adjusting at least one of the plasma processing settings.

Abstract translation: 等离子体处理系统和方法，包括等离子体处理室和RF传输路径。 等离子体处理室包括静电卡盘。 RF传输路径包括一个或多个RF发生器，耦合RF发生器的匹配电路和将匹配电路耦合到静电卡盘的RF馈送。 该系统还包括耦合在等离子体处理室和RF发生器之间的RF返回路径。 等离子体处理系统控制器耦合到等离子体处理室和RF传输路径。 所述控制器包括用于至少一个包括多个等离子体处理设置的等离子体处理配方的配方逻辑和用于调整等离子体处理设置中的至少一个的RF功率补偿逻辑。

公开(公告)号：US20160109863A1

公开(公告)日：2016-04-21

申请号：US14519081

申请日：2014-10-20

Applicant: Lam Research Corporation

Inventor： John C. Valcore, Jr. ,  Henry Povolny

IPC: G05B13/04 ,  G06F17/50

CPC classification number: G06F17/5009 ,  G06F17/5036 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32926 ,  H05H1/46 ,  H05H2001/4682

Abstract: Systems and methods for determining an RF transmission line model for an RF transmission system includes generating a baseline RF transmission line model characterizing the RF transmission system. A plasma RF voltage, RF current, RF power and/or a corresponding RF induced DC bias voltage is calculated from the baseline RF transmission line model. An end module including the electrostatic chuck, a plasma and an RF return path is added to the baseline RF transmission line model to create one or more revised RF transmission line models. A revised plasma RF voltage, a revised plasma RF current, a revised plasma RF power and/or a corresponding revised RF induced DC bias voltage is calculated from each of the revised baseline RF transmission line models. The revised RF transmission line models are scored to identify a best fitting revised RF transmission line model as a complete RF transmission line model.

Abstract translation: 用于确定用于RF传输系统的RF传输线模型的系统和方法包括生成表征RF传输系统的基线RF传输线模型。 从基线RF传输线模型计算等离子体RF电压，RF电流，RF功率和/或相应的RF感应DC偏置电压。 包括静电卡盘，等离子体和RF返回路径的终端模块被添加到基线RF传输线模型以创建一个或多个修改的RF传输线模型。 从每个经修改的基准RF传输线模型计算修正的等离子体RF电压，修正的等离子体RF电流，修正的等离子体RF功率和/或相应修正的RF感应DC偏置电压。 对经修订的RF传输线模型进行评分，以将最佳拟合的RF传输线模型确定为完整的RF传输线模型。

公开(公告)号：US09320126B2

公开(公告)日：2016-04-19

申请号：US13717538

申请日：2012-12-17

Applicant: John C. Valcore, Jr. ,  Bradford J. Lyndaker

Inventor： John C. Valcore, Jr. ,  Bradford J. Lyndaker

IPC: G01R25/00 ,  H05H1/46 ,  H03H7/40 ,  H01J37/32 ,  G06F17/50 ,  H01P3/00

CPC classification number: H01J37/32926 ,  G01R19/25 ,  G01R29/0892 ,  G06F17/5036 ,  H01J37/32183 ,  H01J37/32935 ,  H01J2237/327 ,  H01P3/00 ,  H03H7/40 ,  H05H1/46 ,  H05H2001/4682

Abstract: Systems and methods for determining a value of a variable on a radio frequency (RF) transmission model are described. One of the methods includes identifying a complex voltage and current measured at an output of an RF generator and generating an impedance matching model based on electrical components defined in an impedance matching circuit coupled to the RF generator. The method further includes propagating the complex voltage and current through the one or more elements from the input of the impedance matching model and through one or more elements of an RF transmission model portion that is coupled to the impedance matching model to determine a complex voltage and current at the output of the RF transmission model portion.

Abstract translation: 描述了用于确定射频（RF）传输模型上的变量的值的系统和方法。 方法之一包括识别在RF发生器的输出处测量的复合电压和电流，并且基于耦合到RF发生器的阻抗匹配电路中限定的电部件产生阻抗匹配模型。 该方法还包括通过耦合到阻抗匹配模型的RF传输模型部分的一个或多个元件传播来自阻抗匹配模型的输入端的一个或多个元件的复合电压和电流，以确定复合电压，以及 在RF传输模型部分的输出处的电流。

公开(公告)号：US09299540B2

公开(公告)日：2016-03-29

申请号：US14487135

申请日：2014-09-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuya Ogi ,  Wataru Ozawa ,  Kimihiro Fukasawa ,  Kazuhiro Kanaya

IPC: G01L21/30 ,  H01J37/32

CPC classification number: H01J37/32926 ,  H01J37/32532 ,  H01J37/32779 ,  H01J37/32899 ,  H01J37/3299

Abstract: Provided is a parallel flat-panel type plasma processing apparatus which includes a recipe storing unit storing a processing recipe for performing a plasma processing, a compensation setting unit setting an accumulation time of the plasma processing or the number of processed substrates after starting using a new second electrode and the compensation value of the set temperature of the second electrode in an input screen, and a storage unit storing the compensated set value. The plasma processing apparatus is further equipped with a program for controlling a temperature adjusting mechanism based on a set temperature after compensation by adding a set temperature of an upper electrode written in the processing recipe to the compensation value stored within the storage unit. As a result, the non-uniformity in the plasma processing between the substrates caused by the change of processing atmosphere is suppressed.

Abstract translation: 提供一种平行平板型等离子体处理装置，其包括存储用于执行等离子体处理的处理配方的配方存储单元，设置等离子体处理的累积时间的补偿设定单元或启动后的处理基板的数量，使用新的 第二电极和输入屏幕中第二电极的设定温度的补偿值，以及存储补偿的设定值的存储单元。 等离子体处理装置还配备有用于通过将在处理配方中写入的上部电极的设定温度与存储在存储单元中的补偿值相加而基于补偿后的设定温度来控制温度调节机构的程序。 结果，抑制了由处理气氛的变化引起的基板之间的等离子体处理的不均匀性。

公开(公告)号：US09210790B2

公开(公告)日：2015-12-08

申请号：US13597032

申请日：2012-08-28

Applicant: Daniel J. Hoffman ,  Daniel Carter ,  Victor Brouk ,  William J. Hattel

Inventor： Daniel J. Hoffman ,  Daniel Carter ,  Victor Brouk ,  William J. Hattel

IPC: H01J7/24 ,  H05H1/46 ,  C23C14/34 ,  H01J37/32 ,  H05H1/00

CPC classification number: H05H1/46 ,  C23C14/345 ,  H01J37/32082 ,  H01J37/32422 ,  H01J37/32706 ,  H01J37/32926 ,  H01J37/32935 ,  H01J37/3299 ,  H05H1/0081

Abstract: Systems, methods and apparatus for regulating ion energies and ion energy distributions along with calibrating a bias source and a plasma processing chamber are disclosed. An exemplary method includes applying a periodic voltage function to a load emulator, which emulates electrical characteristics of a plasma load and associated electronics such as an e-chuck. The load emulator can be measured for various electrical parameters and compared to expected parameters generated by the bias source. Differences between measured and expected values can be used to identify and correct faults and abnormalities in the bias supply, the chamber, or a power source used to ignite and sustain the plasma. Once the bias supply is calibrated, the chamber can be calibrated by measuring and calculating an effective capacitance comprising a series and parallel capacitance of the substrate support and optionally the substrate.

Abstract translation: 公开了用于调节离子能量和离子能量分布以及校准偏压源和等离子体处理室的系统，方法和装置。 一种示例性方法包括将周期性电压函数应用于负载仿真器，负载仿真器模拟等离子体负载的电特性和相关联的电子设备例如电动卡盘。 可以测量负载仿真器的各种电气参数，并与偏置源产生的预期参数进行比较。 测量值和预期值之间的差异可用于识别和纠正偏置电源，腔室或用于点燃和维持等离子体的电源的故障和异常。 一旦偏置电源被校准，可以通过测量和计算包括衬底支撑件和任选的衬底的串联和并联电容的有效电容来校准腔室。

公开(公告)号：US09196536B1

公开(公告)日：2015-11-24

申请号：US14497027

申请日：2014-09-25

Applicant: Jungrae Park ,  Wei-Sheng Lei ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

Inventor： Jungrae Park ,  Wei-Sheng Lei ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

IPC: H01L21/82 ,  H01L21/78 ,  H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  B23K26/40 ,  B23K26/36

CPC classification number: H01L21/3065 ,  H01J37/32 ,  H01J37/32889 ,  H01J37/32899 ,  H01J37/32926 ,  H01J2237/2487 ,  H01J2237/334 ,  H01J2237/3341 ,  H01J2237/335 ,  H01L21/02057 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/67069 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/78

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a phase modulated laser beam profile laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

Abstract translation: 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 在一个例子中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护集成电路的层组成。 然后用相位调制的激光束轮廓激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。 然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

公开(公告)号：US20150332894A1

公开(公告)日：2015-11-19

申请号：US14808846

申请日：2015-07-24

Applicant: Lam Research Corporation

Inventor： John C. Valcore, JR. ,  Henry S. Povolny

IPC: H01J37/32 ,  G05B19/418

CPC classification number: H01J37/32137 ,  G05B15/02 ,  G05B19/418 ,  G05B2219/45031 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32917 ,  H01J37/32926 ,  H01J37/3299

Abstract: An arrangement for controlling a plasma processing system is provided. The arrangement includes an RF sensing mechanism for obtaining an RF voltage signal. The arrangement also includes a voltage probe coupled to the RF sensing mechanism to facilitate acquisition of the signal while reducing perturbation of RF power driving a plasma in the plasma processing system. The arrangement further includes a signal processing arrangement configured for receiving the signal, split the voltage signals into a plurality of channels, convert the signals into a plurality of direct current (DC) signals, convert the DC signals into digital signals and process the digital signal in a digital domain to generate a transfer function output. The arrangement moreover includes an ESC power supply subsystem configured to receive the transfer function output as a feedback signal to control the plasma processing system.

Abstract translation: 提供了一种用于控制等离子体处理系统的装置。 该装置包括用于获得RF电压信号的RF感测机构。 该装置还包括耦合到RF感测机构的电压探针，以便于获取信号，同时减少在等离子体处理系统中驱动等离子体的RF功率的扰动。 该装置还包括配置用于接收信号的信号处理装置，将电压信号分成多个通道，将信号转换成多个直流（DC）信号，将DC信号转换为数字信号并处理数字信号 在数字域中产生一个传递函数输出。 该装置还包括配置成接收传递函数输出作为反馈信号以控制等离子体处理系统的ESC电源子系统。