公开(公告)号：US20190066976A1

公开(公告)日：2019-02-28

申请号：US16105699

申请日：2018-08-20

Applicant: IMS Nanofabrication GmbH

Inventor： Elmar Platzgummer ,  Christoph Spengler ,  Wolf Naetar

IPC: H01J37/302 ,  H01J37/317

CPC classification number: H01J37/3026 ,  H01J37/3177 ,  H01J2237/24507 ,  H01J2237/31764 ,  H01J2237/31774

Abstract: A method for re-calculating a pattern to be exposed on a target by means of a charged-particle multi-beam writing apparatus is presented. The pattern elements of a pattern, initially associated with a respective assigned dose, are recalculated in view of obtaining reshaped pattern elements which have a nominal dose as assigned dose. The nominal dose represents a predefined standard value of exposure dose to be exposed for pixels during a scanning stripe exposure within the multi-beam apparatus. For the pattern elements associated with an assigned dose deviating from the nominal dose, the pattern element is reshaped by determining a reshape distance from the value of the assigned dose using a predefined dose slope function forming a reshaped pattern element, whose boundary is offset with regard to boundary of the initial pattern element by an offset distance equaling said reshape distance, assigning the nominal dose to the reshaped pattern element, and replacing the pattern element by the reshaped pattern element.

公开(公告)号：US10199199B2

公开(公告)日：2019-02-05

申请号：US15203994

申请日：2016-07-07

Applicant: NUFLARE TECHNOLOGY, INC.

Inventor： Shigehiro Hara ,  Kenichi Yasui ,  Yasuo Kato

IPC: H01J37/302 ,  H01J37/317

Abstract: In one embodiment, a drawing data creation method includes inputting correction-map-including drawing data having a correction map to a converter, the correction map including dose amount information for each mesh area obtained by dividing a drawing area on a target drawn by a charged particle beam drawing apparatus, the drawing area being divided in a mesh shape, converting dose amount information in a second mesh area adjacent to a first mesh area to a representation based on dose amount information in the first mesh area to compress data of the dose amount information in the second mesh area, and outputting compressed-correction-map-including drawing data having a compressed correction map to a controller, the compressed correction map including dose amount information in which data in each of the plurality of mesh areas has been compressed.

公开(公告)号：US10191376B2

公开(公告)日：2019-01-29

申请号：US15329835

申请日：2014-12-22

Applicant: INTEL CORPORATION

Inventor： Yan A. Borodovsky

IPC: G03F7/20 ,  H01L21/68 ,  H01L21/027 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01J37/317 ,  H01L21/768 ,  H01J37/04 ,  H01J37/302

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a column for an e-beam direct write lithography tool includes a first blanker aperture array (BAA) including a staggered array of openings having a pitch along an array direction. The array direction is orthogonal to a scan direction. Each opening has a first dimension in the array direction. The column also includes a second BAA including a staggered array of openings having the pitch along the array direction. Each opening has a second dimension in the array direction, the second dimension greater than the first dimension.

公开(公告)号：US20180374675A1

公开(公告)日：2018-12-27

申请号：US16118074

申请日：2018-08-30

Applicant: D2S, Inc.

Inventor： Akira Fujimura ,  Harold Robert Zable

IPC: H01J37/302 ,  G03F1/70 ,  G03F7/20 ,  G06F17/50 ,  H01J37/317 ,  G03F1/78 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20

Abstract: A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.

公开(公告)号：US20180342371A1

公开(公告)日：2018-11-29

申请号：US15962415

申请日：2018-04-25

Applicant: NuFlare Technology, Inc.

Inventor： Shunsuke ISAJI

IPC: H01J37/304 ,  H01J37/302 ,  H01J37/317

Abstract: In one embodiment, a charged particle beam writing apparatus includes a storage unit storing a polynomial and a correction map for correcting deviations of writing positions, a correction processing unit correcting pattern positions in a writing area of a writing target substrate by using the polynomial and correcting the pattern positions in a specific region included in the writing area by using the correction map, and a writing unit writing patterns on a substrate by using a charged particle beam in accordance with the pattern positions corrected by the correction processing unit.

公开(公告)号：US10109454B2

公开(公告)日：2018-10-23

申请号：US15437514

申请日：2017-02-21

Applicant: NuFlare Technology, Inc.

Inventor： Kei Hasegawa ,  Hayato Kimura

IPC: H01J37/22 ,  H01J37/317 ,  H01J37/302

Abstract: Disclosed is a method of diagnosing a conversion process for converting a format of image data including unit data corresponding to charged particle beams into a format suitable for an aperture array, the aperture array having a plurality of controllers provided to match a plurality of the charged particle beams to control the charged particle beams, and a driver configured to drive the controllers. The method includes: extracting the unit data having an identical first rank based on an arrangement of the unit data in the image data from the unit data of each block including a predetermined number of the unit data and calculating a first checksum of each of the first rank; extracting the unit data having an identical second rank after the conversion process from the unit data of each block and calculating a second checksum of each of the second rank; and comparing the first and second checksums.

公开(公告)号：US20180247788A1

公开(公告)日：2018-08-30

申请号：US15839984

申请日：2017-12-13

Applicant: NuFlare Technology, Inc.

Inventor： Eita FUJISAKI ,  Yukitaka Shimizu

IPC: H01J37/147 ,  H01J37/04 ,  H01J37/317 ,  H01J37/20 ,  H01J37/302

CPC classification number: H01J37/1471 ,  H01J37/045 ,  H01J37/20 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/0435

Abstract: In one embodiment, a multi charged particle beam writing apparatus includes an emitter emitting a charged particle beam, a shaping aperture array forming multiple beams by allowing the charged particle beam to pass through a plurality of opening portions, an alignment unit disposed between the emitter and the shaping aperture array, the alignment unit including an aperture plate, a detector provided in the aperture plate and detecting charged particles, and an alignment coil adjusting an angle of incidence of the charged particle beam on the aperture plate, a feature quantity calculating unit calculating, from an alignment scan image based on a detection value of the detector, a feature quantity representing a perpendicularity of the angle of incidence of the charged particle beam on the aperture plate, and a coil control unit controlling an excitation value of the alignment coil based on the feature quantity.

公开(公告)号：US20180204707A1

公开(公告)日：2018-07-19

申请号：US15742003

申请日：2016-07-19

Applicant: ASELTA NANOGRAPHICS

Inventor： Mohamed SAIB ,  Patrick SCHIAVONE ,  Thiago FIGUEIRO

IPC: H01J37/302 ,  H01J37/317

Abstract: A method for transferring a pattern onto a substrate by direct writing by means of a particle or photon beam comprises: a step of producing a dose map, associating a dose to elementary shapes of the pattern; and a step of exposing the substrate according to the pattern with a spatially-dependent emitted dose depending on the dose map; wherein the step of producing a dose map includes: computing at least first and second metrics of the pattern for each of the elementary shapes, the first metric representative of features of the pattern within a first range from the elementary shape and the second metric representative of features of the pattern within a second range, larger than the first range, from the elementary shape; and determining the emitted dose associated to each of the elementary shapes of the pattern as a function of the metrics. A computer program product is provided for carrying out such a method or at least the step of producing a dose map.

公开(公告)号：US20180143526A1

公开(公告)日：2018-05-24

申请号：US15873782

申请日：2018-01-17

Applicant: Intel Corporation

Inventor： Yan A. BORODOVSKY ,  Donald W. NELSON ,  Mark C. PHILLIPS

IPC: G03F1/20 ,  H01J37/04 ,  H01J37/302 ,  H01J37/317 ,  G03F7/20 ,  H01L21/768

CPC classification number: G03F1/20 ,  G03F7/203 ,  H01J37/045 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/303 ,  H01J2237/30422 ,  H01J2237/30438 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01L21/76802

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.

公开(公告)号：US09922159B2

公开(公告)日：2018-03-20

申请号：US14616617

申请日：2015-02-06

Applicant: ASELTA NANOGRAPHICS

Inventor： Charles Tiphine ,  Thomas Quaglio ,  Luc Martin

IPC: G06F17/50 ,  H01J37/302 ,  H01J37/317 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: G06F17/5081 ,  B82Y10/00 ,  B82Y40/00 ,  G06F17/50 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31776

Abstract: The invention discloses a computer implemented method of fracturing a surface into elementary features wherein the desired pattern has a rectilinear or curvilinear form. Depending upon the desired pattern, a first fracturing will be performed of a non-overlapping or an overlapping type. If the desired pattern is resolution critical, it will be advantageous to perform a second fracturing step using eRIFs. These eRIFs will be positioned either on the edges or on the medial axis or skeleton of the desired pattern. The invention further discloses method steps to define the position and shape of the elementary features used for the first and second fracturing steps.