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公开(公告)号：US20150187992A1
公开(公告)日：2015-07-02
申请号：US14645472
申请日：2015-03-12
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Hsin-Chieh Huang
CPC classification number: H01L33/22 , H01L33/0066 , H01L33/0075 , H01L33/0079 , H01L33/20 , H01L33/46 , H01L2933/0025
Abstract: A device includes a textured substrate, which further includes a plurality of trenches. Each of the plurality of trenches includes a first sidewall and a second sidewall opposite the first sidewall. A plurality of reflectors configured to reflect light is formed, with each of the plurality of reflectors being on one of the first sidewalls of the plurality of trenches. The second sidewalls of the plurality of trenches are substantially free from any reflector.
Abstract translation: 一种器件包括纹理化衬底，其还包括多个沟槽。 多个沟槽中的每一个包括与第一侧壁相对的第一侧壁和第二侧壁。 多个反射器被配置成反射光，多个反射器中的每一个在多个沟槽的第一侧壁中的一个上。 多个沟槽的第二侧壁基本上没有任何反射器。
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公开(公告)号：US09065015B2
公开(公告)日：2015-06-23
申请号：US14038881
申请日：2013-09-27
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Jung-Tang Chu , Ching-Hua Chiu , Hung-Wen Huang , Yea-Chen Lee , Hsing-Kuo Hsia
CPC classification number: H01L33/32 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L33/0075 , H01L33/0079 , H01L33/12 , H01L33/16 , H01L33/30 , H01L33/325
Abstract: A device includes a substrate; a group III-V semiconductor layer disposed over the substrate; and a seed layer disposed over the group III-V semiconductor layer. The substrate is a printed circuit board. The group III-V semiconductor layer includes a multiple quantum well (MQW) layer, a p-type doped layer, and an n-type doped layer. The seed layer includes a plurality of miniature elements. The miniature elements each contain a single-crystal material suitable for epitaxially growing the group III-V semiconductor layer. The miniature elements collectively cover less than 100% of a surface of the group III-V semiconductor layer.
Abstract translation: 一种器件包括：衬底; 设置在所述基板上的III-V族半导体层; 以及设置在III-V族半导体层上的籽晶层。 基板是印刷电路板。 III-V族半导体层包括多量子阱（MQW）层，p型掺杂层和n型掺杂层。 种子层包括多个微型元件。 微型元件各自含有适于外延生长III-V族III族半导体层的单晶材料。 微型元件共同覆盖III-V族III族半导体层的表面的100％以下。
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公开(公告)号：US20150162315A1
公开(公告)日：2015-06-11
申请号：US14626968
申请日：2015-02-20
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Chih-Kuang Yu , Chyi Shyuan Chern
CPC classification number: H01L25/0753 , H01L27/153 , H01L33/0079 , H01L33/32 , H01L33/46 , H01L33/486 , H01L33/50 , H01L33/507 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: The present disclosure provides one embodiment of a light-emitting structure. The light-emitting structure includes a carrier substrate having first metal features; a transparent substrate having second metal features; a plurality of light-emitting diodes (LEDs) bonded with the carrier substrate and the transparent substrate, sandwiched between the carrier substrate and the transparent substrate; and metal pillars bonded to the carrier substrate and the transparent substrate, each of the metal pillars being disposed between adjacent two of the plurality of LEDs, wherein the first metal features, the second metal features and the metal pillars are configured to electrically connect the plurality of LEDs.
Abstract translation: 本公开提供了发光结构的一个实施例。 发光结构包括具有第一金属特征的载体衬底; 具有第二金属特征的透明基板; 与载体基板和透明基板结合的多个发光二极管（LED）夹在载体基板和透明基板之间; 以及结合到所述载体基板和所述透明基板的金属柱，每个所述金属柱设置在所述多个LED的相邻两个之间，其中所述第一金属特征，所述第二金属特征和所述金属柱被配置为电连接所述多个 的LED。
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54.发明申请LIGHTING APPARATUS HAVING IMPROVED LIGHT OUTPUT UNIFORMITY AND THERMAL DISSIPATION 有权具有改进的光输出均匀性和热释放的照明装置公开(公告)号：US20150124448A1
公开(公告)日：2015-05-07
申请号：US14598282
申请日：2015-01-16
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Pei-Wen Ko , Wei-Yu Yeh
CPC classification number: F21K9/54 , F21K9/62 , F21S6/00 , F21V13/02 , F21V17/12 , F21V29/50 , F21V29/70 , F21V29/763 , F21Y2115/10
Abstract: The present disclosure involves a lighting apparatus. The lighting apparatus includes a photonic device that generates light. The lighting apparatus includes a printed circuit board (PCB) on which the photonic device is located. The lighting apparatus includes a diffuser cap having a curved profile covering the PCB and the photonic device. The diffuser cap has a textured surface for scattering light generated by the photonic device. The lighting apparatus includes a thermally conductive cup that surrounds the diffuser cap and thermal conductively coupled to the PCB. The cup has a reflective inner surface that reflects light transmitting through the diffuser cap. The lighting apparatus includes a heat dissipation structure for dissipating heat generated by the photonic device. The heat dissipation structure is thermally coupled to the cup.
Abstract translation: 本公开涉及一种照明装置。 照明装置包括产生光的光子器件。 照明装置包括其上设置有光子装置的印刷电路板（PCB）。 照明装置包括具有覆盖PCB和光子装置的弯曲轮廓的扩散器盖。 扩散器盖具有纹理表面，用于散射由光子器件产生的光。 照明装置包括导热杯，该导热杯围绕扩散器盖并与PCB导热耦合。 杯子具有反射透射通过扩散器盖的光的反射内表面。 照明装置包括用于散发由光子器件产生的热的散热结构。 散热结构热耦合到杯子。
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公开(公告)号：US20150108424A1
公开(公告)日：2015-04-23
申请号：US14057053
申请日：2013-10-18
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Hung-Wen Huang , Hsing-Kuo Hsia , Ching-Hua Chiu
CPC classification number: H01L33/22 , H01L33/0079 , H01L33/12 , H01L33/38
Abstract: A Light-Emitting Diode (LED) is formed on a sapphire substrate that is removed from the LED by grinding and then etching the sapphire substrate. The sapphire substrate is ground first to a first specified thickness using a single abrasive or multiple abrasives. The remaining sapphire substrate is removed by dry etching or wet etching.
Abstract translation: 发光二极管（LED）形成在通过研磨然后蚀刻蓝宝石衬底而从LED除去的蓝宝石衬底上。 使用单一研磨剂或多个研磨剂将蓝宝石衬底首先研磨至第一指定厚度。 通过干蚀刻或湿法蚀刻去除剩余的蓝宝石衬底。
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Patent Agency Ranking
公开(公告)号：US09000455B2
公开(公告)日：2015-04-07
申请号：US13792136
申请日：2013-03-10
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Ming-Shing Lee , Chyi-Shyuan Chern , Hsin-Hsien Wu , Yung-Chang Chen , Ming-Hua Lo , Chu-Ching Tsai
CPC classification number: H01L33/08 , C23C4/01 , H01L21/00 , H01L21/68721 , H01L2933/0041
Abstract: A shadow mask assembly includes a securing assembly configured to hold a substrate that is configured to hold a plurality of dies. The securing assembly includes a number of guide pins and a shadow mask comprising holes for the guide pins, said holes allowing the guide pins freedom of motion in one direction. The securing assembly includes a number of embedded magnets configured to secure the shadow mask to the securing assembly.
Abstract translation: 荫罩组件包括固定组件，其被配置为保持构造成保持多个模具的衬底。 固定组件包括多个引导销和一个包括用于引导销的孔的荫罩，所述孔允许导销在一个方向上自由运动。 固定组件包括多个嵌入式磁体，其构造成将荫罩固定到固定组件。
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57.发明申请PHOTONIC DEVICES WITH EMBEDDED HOLE INJECTION LAYER TO IMPROVE EFFICIENCY AND DROOP RATE 审中-公开具有嵌入式孔注入层的光电装置，以提高效率和降低速率公开(公告)号：US20150055671A1
公开(公告)日：2015-02-26
申请号：US14533219
申请日：2014-11-05
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Zhen-Yu Li , Tzu-Te Yang , Hon-Way Lin , Chung-Pao Lin , Kuan-Chun Chen , Ching-Yu Chen , You-Da Lin , Hao-Chung Kuo
CPC classification number: H01S5/2013 , B82Y20/00 , H01L33/06 , H01L33/14 , H01L33/145 , H01L33/30 , H01L33/305 , H01L33/32 , H01S5/2009 , H01S5/3063 , H01S5/34333
Abstract: The present disclosure involves a light-emitting device. The light-emitting device includes an n-doped gallium nitride (n-GaN) layer located over a substrate. A multiple quantum well (MQW) layer is located over the n-GaN layer. An electron-blocking layer is located over the MQW layer. A p-doped gallium nitride (p-GaN) layer is located over the electron-blocking layer. The light-emitting device includes a hole injection layer. In some embodiments, the hole injection layer includes a p-doped indium gallium nitride (p-InGaN) layer that is located in one of the three following locations: between the MQW layer and the electron-blocking layer; between the electron-blocking layer and the p-GaN layer; and inside the p-GaN layer.
Abstract translation: 本发明涉及一种发光装置。 发光器件包括位于衬底上方的n掺杂氮化镓（n-GaN）层。 多量子阱（MQW）层位于n-GaN层上。 电子阻挡层位于MQW层上。 p型掺杂氮化镓（p-GaN）层位于电子阻挡层上方。 发光装置包括空穴注入层。 在一些实施例中，空穴注入层包括位于以下三个位置之一的p掺杂的氮化铟镓（p-InGaN）层：在MQW层和电子阻挡层之间; 在电子阻挡层和p-GaN层之间; 并在p-GaN层内部。
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公开(公告)号：US08921884B2
公开(公告)日：2014-12-30
申请号：US14284491
申请日：2014-05-22
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Ching-Yi Chen , Yu-Sheng Tang , Hao-Yu Yang , Hsin-Hung Chen , Tzu-Wen Shih
CPC classification number: H01L33/58 , F21K9/64 , F21V13/02 , F21V13/14 , H01L25/0753 , H01L33/50 , H01L33/505 , H01L33/507 , H01L33/54 , H01L33/60 , H01L2224/48091 , H01L2224/73265 , H01L2924/01322 , H01L2924/1305 , H01L2924/13091 , H01L2924/181 , H01L2924/1815 , H01L2933/0041 , H01L2933/005 , H01L2933/0058 , H01L2924/00 , H01L2924/00012
Abstract: A lighting apparatus includes a substrate. One or more light-emitting devices are disposed over the substrate. A lens is molded over the substrate and over the one or more light-emitting devices. A recess is disposed in the lens. The recess circumferentially surrounds the one or more light-emitting devices in a top view. The recess is at least partially filled with phosphor particles.
Abstract translation: 照明装置包括基板。 一个或多个发光器件设置在衬底上。 在基板上并在一个或多个发光器件上模制透镜。 在透镜中设置凹部。 在俯视图中，该凹部周向地包围一个或多个发光器件。 该凹部至少部分地被磷光体颗粒填充。
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公开(公告)号：US20140329362A1
公开(公告)日：2014-11-06
申请号：US14336212
申请日：2014-07-21
Applicant: TSMC SOLID STATE LIGHTING LTD
Inventor： Andreas Alfred Hase
CPC classification number: H01L24/11 , B81C1/00333 , H01L23/04 , H01L23/10 , H01L23/13 , H01L23/481 , H01L23/49805 , H01L23/49811 , H01L24/03 , H01L24/48 , H01L24/49 , H01L24/81 , H01L24/83 , H01L24/85 , H01L2224/0401 , H01L2224/05554 , H01L2224/11614 , H01L2224/291 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2224/81801 , H01L2224/83801 , H01L2224/83851 , H01L2224/85 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12041 , H01L2924/14 , H01L2924/1461 , H01L2924/15153 , H01L2924/15165 , H01L2924/1532 , H01L2924/161 , H01L2924/16152 , H01L2924/16195 , H01L2924/166 , H01L2924/19041 , H01L2924/19043 , H01L2924/3025 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
Abstract: A leadless package and method for manufacturing silicon based leadless QFN/SON compatible packages are described. In addition the package allows for hermetic sealing of devices while maintaining electrical and optical access. Micro-vias with feed-through metallization through a silicon structure facilitates a surface mount technology compatible silicon package with bottom SMT pads and top surface device integration. Sloped edges on the SMT side enable solder filleting for post solder inspection. Hermetic seal can be attained for example using anodic bonding of a glass lid or using metal soldering. Metal soldering enables the use of solder bumps to provide electrical connections for the package to the lid with integrated device functionality used for sealing. Hermetically sealed silicon packages eliminates the need for an extra packaging layer required in plastic packages and provides a standard interface for enclosing one or more discrete devices.
Abstract translation: 描述了一种用于制造基于硅的无引脚QFN / SON兼容封装的无引线封装和方法。 此外，该封装允许在保持电和光学访问的同时对器件进行气密密封。 通过硅结构进行直通金属化的微通孔有助于表面贴装技术兼容的硅封装，底部SMT焊盘和顶表面器件集成。 SMT侧边缘的边缘可以进行焊锡切割以进行焊后检测。 例如使用玻璃盖的阳极接合或使用金属焊接可以实现密封。 金属焊接使得可以使用焊料凸块为封装提供电连接，并具有用于密封的集成器件功能。 密封硅封装不需要塑料封装所需的额外封装层，并提供用于封装一个或多个分立器件的标准接口。
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公开(公告)号：US20140293615A1
公开(公告)日：2014-10-02
申请号：US14307545
申请日：2014-06-18
Applicant: TSMC SOLID STATE LIGHTING LTD.
Inventor： Chi Xiang Tseng , Hsiao-Wen Lee , Sheng-Shin Guo , Pei-Wen Ko , Chih-Hsuan Sun , Wei-Yu Yeh
IPC: F21K99/00
CPC classification number: F21V3/0625 , F21K9/60 , F21K9/90 , F21V3/02 , F21V5/008 , F21V5/04 , F21V7/0091 , F21V29/77 , F21V29/89 , F21Y2115/10 , H01L33/58 , H01L2933/0091 , Y10T29/49826
Abstract: The present disclosure provides one embodiment of an illumination structure. The illumination structure includes a substrate. A light-emitting diode (LED) is disposed over the substrate. A first lens is disposed over the LED. A second lens is disposed over the first lens. The first lens and the second lens are configured to refract light that is emitted by the LED backward.
Abstract translation: 本公开提供了照明结构的一个实施例。 照明结构包括基板。 发光二极管（LED）设置在基板上。 第一透镜设置在LED上。 第二透镜设置在第一透镜上。 第一透镜和第二透镜被配置为折射由LED发射的光。
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