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    MEMS sensor packaging and method thereof
    51.
    发明授权
    MEMS sensor packaging and method thereof 有权
    MEMS传感器封装及其方法

    公开(公告)号：US09533875B2

    公开(公告)日：2017-01-03

    申请号：US14357046

    申请日：2012-11-09

    Applicant: U Electronics Co., Ltd.

    Inventor： Yong Hee Han ,  Hyung Won Kim ,  Mi Sook Ahn

    IPC: B81B7/00 ,  G01P15/08 ,  B81C1/00 ,  H01L31/02

    CPC classification number: B81B7/0038 ,  B81B7/007 ,  B81B2201/0207 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/096 ,  B81C1/00269 ,  B81C1/00285 ,  B81C2203/0118 ,  G01P15/0802 ,  H01L31/02016 ,  H01L2224/291 ,  H01L2924/014

    Abstract: A micro electro mechanical systems (MEMS) sensor packaging includes a first wafer having a readout integrated circuit (ROIC) formed thereon, a second wafer disposed corresponding to the first wafer and having a concave portion on one side thereof and a MEMS sensor prepared on the concave portion, joint solders formed along a surrounding of the MEMS sensor and sealing the MEMS sensor jointing the first and second wafers, and pad solders formed to electrically connect the ROIC circuit of the first wafer and the MEMS sensor of the second wafer. According to the present disclosure, in joining and packaging a wafer having the ROIC formed thereon and a wafer having the MEMS sensor formed thereon, the size of a package can be reduced and an electric signal can be stably provided by forming internally pad solders for electrically connecting the ROIC and the MEMS sensor.

    Abstract translation: 微机电系统（MEMS）传感器封装包括具有形成在其上的读出集成电路（ROIC）的第一晶片，对应于第一晶片设置的第二晶片，并且在其一侧上具有凹部，并且在 凹部，沿着MEMS传感器的周围形成的接合焊料，并密封连接第一和第二晶片的MEMS传感器，以及形成为将第一晶片的ROIC电路电连接到第二晶片的MEMS传感器的焊盘焊接。 根据本公开内容，在其上形成有ROIC的晶片和其上形成有MEMS传感器的晶片的接合和封装中，可以减小封装的尺寸，并且可以通过形成用于电气的内部焊接焊料来稳定地提供电信号 连接ROIC和MEMS传感器。

    Sealed Infrared Imagers and Sensors
    52.
    发明申请
    Sealed Infrared Imagers and Sensors 审中-公开
    密封红外成像器和传感器

    公开(公告)号：US20160273968A1

    公开(公告)日：2016-09-22

    申请号：US14658242

    申请日：2015-03-16

    Applicant: Vlad Joseph Novotny

    Inventor： Vlad Joseph Novotny

    IPC: G01J5/20 ,  H01L31/09 ,  B81C1/00 ,  H01L31/18

    CPC classification number: B81C1/00285 ,  B81B2201/0207 ,  B81B2203/0109 ,  B81B2207/015 ,  B81C1/00333 ,  B81C2203/0136 ,  B81C2203/0145 ,  G01J5/024 ,  G01J5/045 ,  G01J5/24 ,  G01J2005/204 ,  H01L27/14643

    Abstract: The architecture, design and fabrication of array of suspended micro-elements with individual seals are described. Read out integrated circuit is integrated monolithically with the suspended elements for low parasitics and high signal to noise ratio detection of changes of their electrical resistance. Array of individually sealed, suspended micro-elements is combined with signal processing chip that contains nonvolatile memory with sensitivity calibration of all elements and interpolation between non-functional elements. When the micro-elements are infrared light absorbers, image analysis and recognition is embedded in the processing chip to form the infrared imaging solution for infrared cameras.

    Abstract translation: 描述了具有单独密封件的悬浮微型元件阵列的架构，设计和制造。 读出集成电路与悬挂元件整体集成，用于低寄生效应和高信噪比检测其电阻变化。 单独密封的悬浮微元件阵列与包含非易失性存储器的信号处理芯片组合，具有所有元件的灵敏度校准和非功能元件之间的插值。 当微元件是红外光吸收器时，图像分析和识别被嵌入处理芯片中，以形成用于红外相机的红外成像解决方案。

    Transportation device having a monolithically integrated multi-sensor device on a semiconductor substrate and method therefor
    54.
    发明授权
    Transportation device having a monolithically integrated multi-sensor device on a semiconductor substrate and method therefor 有权
    在半导体衬底上具有单片集成多传感器装置的运输装置及其方法

    公开(公告)号：US09327965B2

    公开(公告)日：2016-05-03

    申请号：US14207443

    申请日：2014-03-12

    Applicant: Versana Micro Inc.

    Inventor： Bishnu Prasanna Gogoi

    IPC: B81B7/02 ,  H01L27/14 ,  H01L27/22 ,  H01L27/16 ,  H05K7/02 ,  H01L41/113

    CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

    Abstract: A transportation device is provided having multiple sensors configured to detect and measure different parameters of interest. The transportation device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The transportation device couples a first parameter to be measured directly to the direct sensor. Conversely, the transportation device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the transportation device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance.

    Abstract translation: 提供了具有多个传感器的运输装置，其被配置为检测和测量不同的感兴趣的参数。 运输装置包括至少一个单片集成多传感器（MIMS）装置。 MIMS器件包括形成在公共半导体衬底上的至少两种不同类型的传感器。 例如，MIMS装置可以包括间接传感器和直接传感器。 运输装置将待测量的第一参数直接耦合到直接传感器。 相反，运输装置可间接地将待测量的第二参数耦合到间接传感器。 可以通过将传感器堆叠到MIMS装置或耦合到MIMS装置的另一基板上而将其它传感器添加到运输装置。 这支持集成多个传感器，如麦克风，加速度计和温度传感器，以降低成本，复杂性，简化组装，同时提高性能。

    Differential capacitive readout system and method for infrared imaging
    55.
    发明授权
    Differential capacitive readout system and method for infrared imaging 有权
    差分电容式读出系统及红外成像方法

    公开(公告)号：US09291507B1

    公开(公告)日：2016-03-22

    申请号：US14231052

    申请日：2014-03-31

    Applicant: Weidong Wang ,  John Bumgarner

    Inventor： Weidong Wang ,  John Bumgarner

    IPC: G01J5/00 ,  G01J5/34 ,  H01L31/18

    CPC classification number: G01J5/40 ,  B81B2201/0207 ,  G01J2005/0077 ,  H01L27/14618 ,  H01L27/14649

    Abstract: An IR imaging system comprising microelectromechanical systems (MEMS) differential capacitive infrared sensors within a sensor array formed on a monolithic integrated circuit substrate, or flip chip bonded onto a signal processing chip fabricated separately, to include, a bimaterial deflectable element anchored to the substrate, a surface electrode fabricated on a top surface of the substrate and positioned below the deflectable element, the surface electrode and the deflectable element separated by a gap to form a first variable capacitor, a sealing ring surrounding the deflectable element and the surface electrode, an infrared transparent sealing cap electrode coupled to the sealing ring to form a vacuum cavity around the deflectable element and the surface electrode, the deflectable element and the sealing cap electrode separated by a gap to form a second variable capacitor and a micro-lens fabricated on the sealing cap electrode to focus the infrared radiation onto the bimaterial deflectable element.

    Abstract translation: 一种红外成像系统，包括形成在单体集成电路基板上的传感器阵列内的微机电系统（MEMS）差分电容式红外传感器或者分别结合到单独制造的信号处理芯片上的倒装芯片，以包括锚定到基板的双材料可偏转元件， 表面电极，其制造在所述基板的顶表面上并且位于所述可偏转元件的下方，所述表面电极和所述可偏转元件由间隙隔开以形成第一可变电容器，围绕所述可偏转元件和所述表面电极的密封环，红外线 透明密封帽电极，其耦合到所述密封环，以在所述可偏转元件周围形成真空腔，所述表面电极，所述可偏转元件和所述密封帽电极由间隙隔开以形成第二可变电容器和在所述密封件上制造的微透镜 帽电极将红外辐射聚焦到双材料上 可回应元素

    WAFER LEVEL PACKAGED INFRARED (IR) FOCAL PLANE ARRAY (FPA) WITH EVANESCENT WAVE COUPLING
    56.
    发明申请
    WAFER LEVEL PACKAGED INFRARED (IR) FOCAL PLANE ARRAY (FPA) WITH EVANESCENT WAVE COUPLING 有权
    WAFER LEVEL包装红外（IR）FOCAL PLANE ARRAY（FPA）与EVANESCENT WAVE COUPLING

    公开(公告)号：US20150321905A1

    公开(公告)日：2015-11-12

    申请号：US14270945

    申请日：2014-05-06

    Applicant: Raytheon Company

    Inventor： Roland W. Gooch ,  Stephen H. Black ,  Thomas A. Kocian ,  Adam M. Kennedy ,  Buu Q. Diep

    IPC: B81B7/00 ,  H01L37/00

    CPC classification number: B81B7/0067 ,  B81B7/0035 ,  B81B2201/0207 ,  B81C1/00317 ,  G01J5/045 ,  G01J5/08 ,  G01J5/20 ,  H01L37/00

    Abstract: A structure for detecting electromagnetic radiation having a predetermined wavelength. The structure includes a device wafer having a sensing element disposed on a predetermined region of a surface of the device wafer responsive to the electromagnetic radiation. A cover wafer is provided having a region thereof transparent to the electromagnetic radiation for passing the electromagnetic radiation through the transparent region onto a surface of the sensing element. A bond gap spacer structure is provided for supporting the surface of the sensing element from an opposing surface of the transparent region of the cover wafer a distance less than a fraction of the predetermined wavelength when. the cover wafer is bonded to the device wafer.

    Abstract translation: 一种用于检测具有预定波长的电磁辐射的结构。 该结构包括具有传感元件的器件晶片，其响应于电磁辐射而设置在器件晶片的表面的预定区域上。 提供了覆盖晶片，其具有对电磁辐射透明的区域，以将电磁辐射穿过透明区域传递到感测元件的表面上。 提供了一种键间隔结构，用于当从盖玻片的透明区域的相对表面以小于预定波长的一小部分的距离来支撑感测元件的表面时。 盖晶片被结合到器件晶片。

    Infrared detectors
    57.
    发明授权
    Infrared detectors 有权
    红外探测器

    公开(公告)号：US09121761B2

    公开(公告)日：2015-09-01

    申请号：US13670892

    申请日：2012-11-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung-hyun Nam ,  Hae-seok Park

    IPC: G01J5/20 ,  G01J5/12 ,  G01J5/04 ,  G01J5/02 ,  G01J5/06 ,  G01J5/08

    CPC classification number: G01J5/12 ,  B81B2201/0207 ,  G01J5/024 ,  G01J5/0285 ,  G01J5/045 ,  G01J5/046 ,  G01J5/06 ,  G01J5/0853

    Abstract: In some example embodiments, an infrared detector may comprise a substrate; a resonator spaced apart from the substrate, the resonator absorbing incident infrared light; a thermoelectric material layer contacting the resonator and having a variable resistance according to temperature variation due to the absorbed incident infrared light; a lead wire electrically connecting the thermoelectric material layer and the substrate; a heat separation layer between the substrate and the thermoelectric material layer, the heat separation layer preventing heat from being transferred from the thermoelectric material layer to the substrate; and/or a ground plane layer preventing the incident infrared light from proceeding toward the substrate. The heat separation layer may at least reduce heat transfer from the thermoelectric material layer to the substrate. The ground plane layer may at least reduce an amount of the incident infrared light that reaches the substrate.

    Abstract translation: 在一些示例性实施例中，红外检测器可以包括基底; 谐振器，其与所述衬底间隔开，所述谐振器吸收入射的红外光; 接触谐振器的热电材料层，并且由于吸收的入射红外光而具有根据温度变化的可变电阻; 电连接所述热电材料层和所述基板的引线; 在所述基板和所述热电材料层之间的热分离层，所述热分离层防止热量从所述热电材料层转移到所述基板; 和/或防止入射的红外光向衬底延伸的接地层。 热分离层可以至少减少从热电材料层到基底的热传递。 接地层可以至少减少到达基板的入射红外光的量。

    MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR
    59.
    发明申请
    MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR 有权
    半导体基板上的单片集成多传感器器件及其方法

    公开(公告)号：US20140264657A1

    公开(公告)日：2014-09-18

    申请号：US14207419

    申请日：2014-03-12

    Applicant: BISHNU PRASANNA GOGOI

    Inventor： BISHNU PRASANNA GOGOI

    IPC: H01L27/02 ,  H01L29/66 ,  H01L43/12 ,  H01L27/22 ,  H01L27/14 ,  H01L31/18

    CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

    Abstract: An integrated circuit having an indirect sensor and a direct sensor formed on a common semiconductor substrate is disclosed. The direct sensor requires the parameter being measured to be directly applied to the direct sensor. Conversely, the indirect sensor can have the parameter being measured to be indirectly applied to the indirect sensor. The parameter being measured by the direct sensor is different than the parameter being measured by the indirect sensor. In other words, the direct sensor and indirect sensor are of different types. An example of a direct sensor is a pressure sensor. The pressure being measured by the pressure sensor must be applied to the pressure sensor. An example of an indirect sensor is an accelerometer. The rate of change of velocity does not have to be applied directly to the accelerometer. In one embodiment, the direct and indirect sensors are formed using photolithographic techniques.

    Abstract translation: 公开了一种具有间接传感器和形成在公共半导体衬底上的直接传感器的集成电路。 直接传感器需要测量的参数直接应用于直接传感器。 相反，间接传感器可以将被测量的参数间接地应用于间接传感器。 由直接传感器测量的参数与由间接传感器测量的参数不同。 换句话说，直接传感器和间接传感器是不同的类型。 直接传感器的一个例子是压力传感器。 由压力传感器测量的压力必须应用于压力传感器。 间接传感器的一个例子是加速度计。 速度变化率不必直接应用于加速度计。 在一个实施例中，使用光刻技术形成直接和间接传感器。

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