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    SEMICONDUCTOR DEVICE
    52.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20160322303A1

    公开(公告)日：2016-11-03

    申请号：US15210623

    申请日：2016-07-14

    Applicant: Semiconductor Manufacturing International (Shanghai) Corporation

    Inventor： GUANGCAI FU ,  TIANLUN YANG ,  XIAOPING ZHANG

    IPC: H01L23/528 ,  H01L21/02 ,  B81C1/00 ,  B81B7/00 ,  H01L29/06 ,  H01L23/532

    CPC classification number: H01L23/5283 ,  B81B7/007 ,  B81B2201/0264 ,  B81B2207/07 ,  B81C1/00095 ,  B81C1/00849 ,  B81C2201/0132 ,  H01L21/02068 ,  H01L21/475 ,  H01L23/53219 ,  H01L23/53233 ,  H01L23/53247 ,  H01L29/0649 ,  H01L2221/1063

    Abstract: Semiconductor devices and fabrication methods are provided. In a semiconductor device, a semiconductor substrate includes a first electrode layer having a top surface coplanar with a top surface of the semiconductor substrate. A sacrificial layer is formed on the semiconductor substrate and the first electrode layer. A first mask layer made of a conductive material is formed on the sacrificial layer. The first mask layer and the sacrificial layer are etched until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer. A cleaning process is performed to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings. Conductive plugs are formed in the openings after the cleaning process.

    Abstract translation: 提供了半导体器件和制造方法。 在半导体器件中，半导体衬底包括具有与半导体衬底的顶表面共面的顶表面的第一电极层。 在半导体衬底和第一电极层上形成牺牲层。 在牺牲层上形成由导电材料制成的第一掩模层。 蚀刻第一掩模层和牺牲层直到暴露第一​​电极层的表面以形成穿过第一掩模层和牺牲层的开口。 执行清洁处理以去除粘附到第一掩模层的表面并附着到开口的侧壁和底表面上的蚀刻副产物。 在清洁过程之后，在开口中形成导电塞。

    Method for Manufacturing Hollow Structure
    53.
    发明申请
    Method for Manufacturing Hollow Structure 审中-公开
    空心结构制造方法

    公开(公告)号：US20160280536A1

    公开(公告)日：2016-09-29

    申请号：US14777778

    申请日：2014-03-17

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Kippei SUGITA ,  Hiroyuki HASHIMOTO

    IPC: B81C1/00

    CPC classification number: B81C1/00047 ,  B81C2201/0104 ,  B81C2201/0108 ,  B81C2201/0132 ,  B82Y40/00

    Abstract: A hollow structure is manufactured by preparing a lower structure which includes a concave portion, depositing a sacrifice film composed of an organic film on the lower structure by a vapor deposition polymerization method to bury the concave portion with the sacrifice film, removing an unnecessary portion of the sacrifice film, forming an upper structure on the sacrifice film with the unnecessary portion removed, and forming an air gap between the lower structure and the upper structure by removing the sacrifice film.

    Abstract translation: 通过制备下部结构制造中空结构，该下部结构包括凹部，通过气相沉积聚合方法在下部结构上沉积由有机膜构成的牺牲膜以用牺牲膜掩埋凹部，除去不需要的部分 牺牲膜，在牺牲膜上形成上部结构，去除不需要的部分，并且通过去除牺牲膜在下部结构和上部结构之间形成气隙。

    MEMS ANTI-PHASE VIBRATORY GYROSCOPE
    55.
    发明申请
    MEMS ANTI-PHASE VIBRATORY GYROSCOPE 有权
    MEMS抗相振动陀螺仪

    公开(公告)号：US20160238390A1

    公开(公告)日：2016-08-18

    申请号：US14270596

    申请日：2014-05-06

    Applicant: Chinese Academy of Sciences Institute of Geology and Geophysics

    Inventor： Lian Zhong Yu ,  Chen Sun

    IPC: G01C19/5747 ,  G01C19/5769

    CPC classification number: G01C19/5769 ,  B81B3/0048 ,  B81B2201/0242 ,  B81B2203/0118 ,  B81B2203/0136 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0159 ,  B81C2201/0176 ,  B81C2203/0118 ,  G01C19/574 ,  G01C19/5747

    Abstract: A MEMS anti-phase vibratory gyroscope includes two measurement masses with a top cap and a bottom cap each coupled with a respective measurement mass. The measurement masses are oppositely coupled with each other in the vertical direction. Each measurement mass includes an outer frame, an inner frame located within the outer frame, and a mass located within the inner frame. The two measurement masses are coupled with each other through the outer frame. The inner frame is coupled with the outer frame by a plurality of first elastic beams. The mass is coupled with the inner frame by a plurality of second elastic beams. A comb coupling structure is provided along opposite sides of the outer frame and the inner frame. The two masses vibrate toward the opposite direction, and the comb coupling structure measures the angular velocity of rotation.

    Abstract translation: MEMS反相振动陀螺仪包括两个测量质量，其具有顶盖和底盖，每个与相应的测量质量耦合。 测量质量在垂直方向上相互耦合。 每个测量质量包括外框架，位于外框架内的内框架和位于内框架内的质量。 两个测量质量通过外框架相互耦合。 内框架通过多个第一弹性梁与外框架联接。 质量通过多个第二弹性梁与内框架联接。 梳齿联接结构沿着外框架和内框架的相对侧设置。 两个质量体向相反方向振动，梳齿联结结构测量旋转角速度。

    MEMS and CMOS integration with low-temperature bonding
    56.
    发明授权
    MEMS and CMOS integration with low-temperature bonding 有权
    MEMS和CMOS集成低温接合

    公开(公告)号：US09394161B2

    公开(公告)日：2016-07-19

    申请号：US14639492

    申请日：2015-03-05

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Jung-Huei Peng

    IPC: H01L21/58 ,  B81C1/00 ,  B81B3/00 ,  B81B7/00

    CPC classification number: B81C1/00238 ,  B81B3/001 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/0132 ,  B81C2203/035 ,  B81C2203/037 ,  B81C2203/0792 ,  H01L2224/16

    Abstract: The present disclosure relates to method of forming a MEMS device that mitigates the above mentioned difficulties. In some embodiments, the present disclosure relates to a method of forming a MEMS device, which forms one or more cavities within a first side of a carrier substrate. The first side of the carrier substrate is then bonded to a dielectric layer disposed on a micro-electromechanical system (MEMS) substrate, and the MEMS substrate is subsequently patterned to define a soft mechanical structure over the one or more cavities. The dielectric layer is then selectively removed, using a dry etching process, to release the one or more soft mechanical structures. A CMOS substrate is bonded to a second side of the MEMS substrate, by way of a bonding structure disposed between the CMOS substrate and the MEMS substrate, using a low-temperature bonding process.

    Abstract translation: 本公开涉及形成减轻上述困难的MEMS器件的方法。 在一些实施例中，本公开涉及一种形成MEMS器件的方法，所述MEMS器件在载体衬底的第一侧内形成一个或多个空腔。 然后将载体衬底的第一侧接合到布置在微机电系统（MEMS）衬底上的电介质层，随后将MEMS衬底图案化以限定一个或多个空腔上的软机械结构。 然后使用干蚀刻工艺选择性地去除电介质层以释放一个或多个软机械结构。 通过使用低温接合工艺，通过设置在CMOS衬底和MEMS衬底之间的接合结构将CMOS衬底结合到MEMS衬底的第二侧。

    SEMICONDUCTOR DEVICE
    57.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20160202473A1

    公开(公告)日：2016-07-14

    申请号：US15077105

    申请日：2016-03-22

    Applicant: SUMITOMO PRECISION PRODUCTS CO., LTD.

    Inventor： Ryohei UCHINO ,  Gen MATSUOKA

    IPC: G02B26/08 ,  B81B3/00

    CPC classification number: B81C1/00492 ,  B81B3/0086 ,  B81B2201/042 ,  B81B2203/0136 ,  B81C1/00404 ,  B81C1/00603 ,  B81C2201/0102 ,  B81C2201/0132 ,  B81C2201/0198 ,  G02B26/0841

    Abstract: A mirror device includes a frame body, a mirror configured to tilt about a Y-axis with respect to the frame body, a fixed inner comb electrode including a plurality of electrode fingers arranged in the arrangement direction along the Y-axis and provided at the frame body, and a movable inner comb electrode including a plurality of electrode fingers arranged in the arrangement direction and provided at the mirror, the electrodes fingers of the fixed inner comb electrode and the movable inner comb electrode being alternately arranged. The mirror includes a mirror body and an extension extending from the mirror body. Some of the electrode fingers of the movable inner comb electrode are provided at the mirror body, and another electrode fingers of the movable inner comb electrode are provided at the extension.

    Abstract translation: 反射镜装置包括框架体，配置成相对于框架体围绕Y轴倾斜的反射镜，固定的内梳状电极，包括沿着Y轴布置在排列方向上的多个电极指， 框体和可动内梳状电极，其包括沿着排列方向布置并设置在反射镜处的多个电极指，固定内梳电极和可移动​​内梳电极的电极指交替布置。 镜子包括镜体和从镜体延伸的延伸部分。 可动内梳电极的一些电极指设置在镜体上，可移动内梳电极的另一电极指在延伸部处设置。

    FABRICATION METHOD OF SEMICONDUCTOR PIECE
    59.
    发明申请
    FABRICATION METHOD OF SEMICONDUCTOR PIECE 有权
    半导体器件的制造方法

    公开(公告)号：US20160133476A1

    公开(公告)日：2016-05-12

    申请号：US14884168

    申请日：2015-10-15

    Applicant: FUJI XEROX CO., LTD.

    Inventor： Mutsuya TAKAHASHI ,  Shuichi YAMADA ,  Michiaki MURATA

    IPC: H01L21/3065 ,  H01L21/304 ,  H01L21/02 ,  H01L21/683

    CPC classification number: H01L21/3065 ,  B81C1/00531 ,  B81C1/00619 ,  B81C2201/0132 ,  H01L21/02225 ,  H01L21/3043 ,  H01L21/30621 ,  H01L21/6836 ,  H01L21/78 ,  H01L33/0095 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01S5/0201 ,  H01S5/0202

    Abstract: A fabrication method of a semiconductor piece includes forming a groove that has a first groove portion, and a second groove portion which is a groove portion formed to communicate with a lower part of the first groove portion and extends toward a lower part at a steeper angle than an angle of the first groove portion, has a shape without an angle portion between the first groove portion and the second groove portion, is positioned on the front side, and is formed by dry etching; affixing a retention member including an adhesive layer to the surface in which the groove on the front side is formed; thinning the substrate from the back side of the substrate in a state in which the retention member is affixed; and removing the retention member from the surface after the thinning.

    Abstract translation: 半导体器件的制造方法包括形成具有第一槽部的槽和形成为与第一槽部的下部连通并且以更陡的角度向下方延伸的槽部的第二槽部 与第一槽部的角度相比，具有在第一槽部和第二槽部之间没有角部的形状位于前侧，通过干蚀刻形成; 将包括粘合剂层的保持构件固定到其上形成有所述凹槽的表面; 在保持部件固定的状态下，从基板的背面使基板变薄; 并且在变薄之后从表面移除保持构件。

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