公开(公告)号：US10010912B2

公开(公告)日：2018-07-03

申请号：US14276289

申请日：2014-05-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Jared Ahmad Lee ,  Dmitry Lubomirsky ,  Martin Jeff Salinas ,  Andrew Nguyen ,  Tom K. Cho ,  Eric A. Englhardt ,  Fernando Silveira

IPC: F16K51/02 ,  B08B9/032 ,  F16K3/02 ,  H01L21/67

CPC classification number: B08B9/0325 ,  F16K3/02 ,  F16K51/02 ,  H01L21/67017 ,  H01L21/67253 ,  Y10T137/0419 ,  Y10T137/4259

Abstract: Methods and apparatus for particle reduction in throttle gate valves used in substrate process chambers are provided herein. In some embodiments, a gate valve for use in a process chamber includes a body having an opening disposed therethrough from a first surface to an opposing second surface of the body; a pocket extending into the body from a sidewall of the opening; a gate movably disposed within the pocket between a closed position that seals the opening and an open position that reveals the opening and disposes the gate completely within the pocket; and a plurality of gas ports disposed in the gate valve configured to direct a gas flow into a portion of the gate valve fluidly coupled to the opening.

公开(公告)号：US09947559B2

公开(公告)日：2018-04-17

申请号：US13646069

申请日：2012-10-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Aniruddha Pal ,  Martin Jeffrey Salinas ,  Dmitry Lubomirsky ,  Imad Yousif ,  Andrew Nguyen

IPC: C23C16/00 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306 ,  H01L21/67 ,  C23C16/458

CPC classification number: H01L21/67103 ,  C23C16/4585

Abstract: Apparatus for processing semiconductors are provided herein. In some embodiments, an apparatus for processing a substrate may include: a first ring disposed concentrically about a substrate support, the first ring configured to position a substrate atop the substrate support during processing; and a second ring disposed between the substrate support and the first ring, the second ring configured to provide a heat transfer path from the first ring to the substrate support.

公开(公告)号：US09741546B2

公开(公告)日：2017-08-22

申请号：US13629267

申请日：2012-09-27

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, Jr. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J37/3244 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32743 ,  H01J37/32834 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3344 ,  H05H1/46

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US09449794B2

公开(公告)日：2016-09-20

申请号：US14270578

申请日：2014-05-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Kartik Ramaswamy ,  Jason A. Kenney ,  Shahid Rauf ,  Kenneth S. Collins ,  Yang Yang ,  Steven Lane ,  Yogananda Sarode Vishwanath

IPC: H01J7/24 ,  H01J37/32 ,  C23C16/455 ,  C23C16/509 ,  H05H1/46

CPC classification number: H01J37/3211 ,  C23C16/45563 ,  C23C16/509 ,  H01J37/32174 ,  H05H1/46 ,  H05H2001/4667

Abstract: A plasma reactor has an overhead multiple coil antennas including a parallel spiral coil antenna and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

Abstract translation: 等离子体反应器具有架空多重线圈天线，包括平行的螺旋线圈天线以及围绕对称和径向射频馈送的对称和径向射频馈送以及圆柱形RF屏蔽。 径向RF馈送对称地馈送到等离子体源。

公开(公告)号：US20160217981A1

公开(公告)日：2016-07-28

申请号：US15068811

申请日：2016-03-14

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Kartik Ramaswamy ,  Srinivas Nemani ,  Bradley Howard ,  Yogananda Sarode Vishwanath

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32495 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32568 ,  H01J37/32807 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069

Abstract: An exemplary semiconductor processing system may include a remote plasma source coupled with a processing chamber having a top plate. An inlet assembly may be used to couple the remote plasma source with the top plate and may include a mounting assembly, which in embodiments may include at least two components. The inlet assembly may further include a precursor distribution assembly defining a plurality of distribution channels fluidly coupled with an injection port.

公开(公告)号：US09287095B2

公开(公告)日：2016-03-15

申请号：US14108692

申请日：2013-12-17

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Kartik Ramaswamy ,  Srinivas Nemani ,  Bradley Howard ,  Yogananda Sarode Vishwanath

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01J37/32495 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32568 ,  H01J37/32807 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069

Abstract: An exemplary semiconductor processing system may include a remote plasma source coupled with a processing chamber having a top plate. An inlet assembly may be used to couple the remote plasma source with the top plate and may include a mounting assembly, which in embodiments may include at least two components. The inlet assembly may further include a precursor distribution assembly defining a plurality of distribution channels fluidly coupled with an injection port.

Abstract translation: 示例性半导体处理系统可以包括与具有顶板的处理室耦合的远程等离子体源。 入口组件可以用于将远程等离子体源与顶板耦合，并且可以包括安装组件，其在实施例中可以包括至少两个组件。 入口组件还可以包括限定与注射口流体连接的多个分配通道的前体分布组件。

公开(公告)号：US09111722B2

公开(公告)日：2015-08-18

申请号：US13836890

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid Dorf ,  Shahid Rauf ,  Jonathan Liu ,  Jason A. Kenney ,  Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Steven Lane

IPC: H01J7/24 ,  H05B31/26 ,  H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32183

Abstract: An inductively coupled plasma reactor has three concentric RF coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying only two reactive elements in the current divider circuit.

Abstract translation: 电感耦合等离子体反应器具有三个同心的RF线圈天线和分流器电路，其通过仅改变分流器电路中的两个无功元件来单独控制三个线圈天线中的每一个中的电流。

公开(公告)号：US08932959B2

公开(公告)日：2015-01-13

申请号：US13786850

申请日：2013-03-06

Applicant: Applied Materials, Inc.

Inventor： Srinivas D. Nemani ,  Mang-mang Ling ,  Jeremiah T. Pender ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Sergey G. Belostotskiy ,  Sumit Agarwal

IPC: H01L21/302 ,  H01L21/461 ,  H01L45/00 ,  H01J37/32

CPC classification number: H01L45/00 ,  H01J37/321 ,  H01L43/12

Abstract: Etching of a thin film stack including a lower thin film layer containing an advanced memory material is carried out in an inductively coupled plasma reactor having a dielectric RF window without exposing the lower thin film layer, and then the etch process is completed in a toroidal source plasma reactor.

Abstract translation: 在具有介电RF窗口的电感耦合等离子体反应器中进行包括含有先进的记忆材料的下部薄膜层的薄膜叠层的蚀刻，而不暴露下部薄膜层，然后蚀刻工艺在环形源 等离子体反应器。

公开(公告)号：US20140311581A1

公开(公告)日：2014-10-23

申请号：US13919838

申请日：2013-06-17

Applicant: Applied Materials, Inc.

Inventor： Sergey G. Belostotskiy ,  Andrew Nguyen ,  Jonathan Dinh ,  Ying-Sheng Lin

IPC: H01L21/67

CPC classification number: H01L21/67017 ,  H01L21/67253 ,  Y10T137/0396 ,  Y10T137/85986 ,  Y10T137/86002

Abstract: An exemplary semiconductor processing system may include a processing chamber and a first pressure regulating device coupled with the processing chamber. A second pressure regulating device may also be coupled with the processing chamber separate from the first pressure regulating device. A first pump may be fluidly coupled with the first pressure regulating device and fluidly isolated from the second pressure regulating device. A second fluid pump may be fluidly coupled with the second pressure regulating device.

Abstract translation: 示例性的半导体处理系统可以包括处理室和与处理室耦合的第一压力调节装置。 第二压力调节装置还可以与处理室联接，与第一压力调节装置分开。 第一泵可以与第一压力调节装置流体耦合并且与第二压力调节装置流体隔离。 第二流体泵可以与第二压力调节装置流体耦合。

公开(公告)号：US20140170856A1

公开(公告)日：2014-06-19

申请号：US13786850

申请日：2013-03-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Srinivas D. Nemani ,  Mang-mang Ling ,  Jeremiah T. Pender ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Sergey G. Belostotskiy ,  Sumit Agarwal

IPC: H01L21/3065

CPC classification number: H01L45/00 ,  H01J37/321 ,  H01L43/12

Abstract: Etching of a thin film stack including a lower thin film layer containing an advanced memory material is carried out in an inductively coupled plasma reactor having a dielectric RF window without exposing the lower thin film layer, and then the etch process is completed in a toroidal source plasma reactor.

Abstract translation: 在具有介电RF窗口的电感耦合等离子体反应器中进行包括含有先进的记忆材料的下部薄膜层的薄膜叠层的蚀刻，而不暴露下部薄膜层，然后蚀刻工艺在环形源 等离子体反应器。