公开(公告)号：US12272524B2

公开(公告)日：2025-04-08

申请号：US17947675

申请日：2022-09-19

Applicant: Applied Materials, Inc.

Inventor： Yue Guo ,  Kartik Ramaswamy ,  Jie Yu ,  Yang Yang

IPC: H01J37/32

Abstract: A wideband variable impedance load for high volume manufacturing qualification and diagnostic testing of a radio frequency power source, an impedance matching network and RF sensors for generating plasma in a semiconductor plasma chamber for semiconductor fabrication processes. The wideband variable impedance load may comprise a fixed value resistance operable at a plurality of frequencies and coupled with a variable impedance network capable of transforming the fixed value resistance into a wide range of complex impedances at the plurality of frequencies. Response times and match tuning element position repeatability may be verified. Automatic testing, verification and qualification of production and field installed radio frequency power sources for plasma generation are easily performed.

公开(公告)号：US12266506B2

公开(公告)日：2025-04-01

申请号：US17930139

申请日：2022-09-07

Applicant: Applied Materials, Inc.

Inventor： Yue Guo ,  Kartik Ramaswamy ,  Nicolas J. Bright ,  Yang Yang ,  A N M Wasekul Azad

IPC: H01J37/32 ,  G01R27/02 ,  H01L21/66

Abstract: Embodiments of the disclosure include a method of processing a substrate in a plasma processing system, comprising delivering an RF signal, by an RF generator, through an RF match to an electrode assembly disposed within the plasma processing system, wherein while delivering the RF signal the RF match is set to a first matching point, and delivering a voltage waveform, by a waveform generator, to the electrode assembly disposed within the plasma processing system while the RF signal is delivered to the electrode assembly. The method includes receiving, by the RF match, a synchronization signal from a RF generator or the waveform generator, measuring, by an output sensor of the RF match, a first set of impedance related data of the plasma processing system over a first time period, the first time period beginning after a first delay triggered by a first portion of a first waveform pulse of the synchronization signal, measuring, by the output sensor of the RF match, a second set of impedance related data of the plasma processing system over a second time period, the second time period beginning after a second delay triggered by the first portion of the first waveform pulse of the synchronization signal, calculating, by the RF match, a combined impedance parameter based on the measured first set of impedance related data and the measured second set of impedance related data, and adjusting a matching parameter within the RF match based on the calculated combined impedance parameter to achieve a second matching point.

公开(公告)号：US12125689B2

公开(公告)日：2024-10-22

申请号：US17940513

申请日：2022-09-08

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Andrew Nguyen ,  Yang Yang ,  Sathya Ganta ,  Fernando Silveira ,  Yue Guo ,  Lu Liu

IPC: H01J37/32

CPC classification number: H01J37/32862 ,  H01J37/32082 ,  H01J2237/334

Abstract: Methods and apparatus for forming plasma in a process chamber use an annular exciter formed of a first conductive material with a first end electrically connected to an RF power source that provides RF current and a second end connected to a ground and an annular applicator, physically separated from the annular exciter, formed of a second conductive material with at least one angular split with an angle forming an upper overlap portion and a lower overlap portion separated by a high K dielectric material which is configured to provide capacitance in conjunction with an inductance of the annular applicator to form a resonant circuit that is configured to resonate when the annular exciter flows RF current that inductively excites the annular applicator to a resonant frequency which forms azimuthal plasma from the annular applicator.

公开(公告)号：US12020901B2

公开(公告)日：2024-06-25

申请号：US17314173

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Yue Guo ,  Krishna Kumar Kuttannair ,  Jie Yu ,  Kartik Ramaswamy ,  Yang Yang

IPC: H01J37/32 ,  H03H7/40

CPC classification number: H01J37/32183 ,  H03H7/40 ,  H01J2237/334

Abstract: Methods and apparatus using a matching network for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises a local controller connectable to a system controller of the plasma processing chamber, a first motorized capacitor connected to the local controller, a second motorized capacitor connected to the first motorized capacitor, a first sensor at an input of the matching network and a second sensor at an output of the matching network for obtaining in-line RF voltage, current, phase, harmonics, and impedance data, respectively, and an Ethernet for Control Automation Technology (EtherCAT) communication interface connecting the local controller to the first motorized capacitor, the second motorized capacitor, the first sensor, and the second sensor.

公开(公告)号：US11967483B2

公开(公告)日：2024-04-23

申请号：US17337146

申请日：2021-06-02

Applicant: Applied Materials, Inc.

Inventor： Yang Yang ,  Yue Guo ,  Kartik Ramaswamy

IPC: H01J37/32 ,  H03H7/01

CPC classification number: H01J37/32146 ,  H03H7/0115 ,  H01J2237/327

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source selectively coupled to an output node, where the output node is configured to be coupled to an electrode disposed within a processing chamber, and where the output node is selectively coupled to a ground node. The waveform generator may also include a radio frequency (RF) signal generator, and a first filter coupled between the RF signal generator and the output node.

公开(公告)号：US20240128091A1

公开(公告)日：2024-04-18

申请号：US18221063

申请日：2023-07-12

Applicant: Applied Materials, Inc.

Inventor： Zhonghua Yao ,  Qian Fu ,  Mark J. Saly ,  Yang Yang ,  Jeffrey W. Anthis ,  David Knapp ,  Rajesh Sathiyanarayanan

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31144 ,  H01L21/31116 ,  H01L21/67069

Abstract: A method includes providing, within an etch chamber, a base structure including a target layer disposed on a substrate, and an etch mask disposed on the target layer, dry etching, within the etch chamber, the target layer using thionyl chloride to obtain a processed base structure, and after forming the plurality of features. The processed base structure includes a plurality of features and a plurality of openings defined by the etch mask. The method further includes removing the processed base structure from the etch chamber. In some embodiments, the target layer includes carbon. In some embodiments, the dry etching is performed at a sub-zero degree temperature.

公开(公告)号：US11721525B2

公开(公告)日：2023-08-08

申请号：US17521185

申请日：2021-11-08

Applicant: Applied Materials, Inc.

Inventor： Yue Guo ,  Kartik Ramaswamy ,  Yang Yang

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32146 ,  H01J37/32449 ,  H01J37/32935

Abstract: Methods and apparatus for plasma processing substrate are provided herein. The method comprises supplying from an RF power source RF power, measuring at the RF power source a reflected power at the first power level, comparing the measured reflected power to a first threshold, transmitting a result of the comparison to a controller, setting at least one variable capacitor to a first position based on the comparison of the measured reflected power at the first power level to the first threshold, supplying from the RF power source the RF power at a second power level for plasma processing the substrate, measuring at the RF power source the reflected power at the second power level, comparing the measured reflected power at the second power level to a second threshold different from the first threshold, transmitting a result of the comparison, setting at the matching network the at least one variable capacitor to a second position.

公开(公告)号：US20230184540A1

公开(公告)日：2023-06-15

申请号：US17548347

申请日：2021-12-10

Applicant: Applied Materials, Inc.

Inventor： Yue Guo ,  Yang Yang ,  Kartik Ramaswamy

IPC: G01B11/24 ,  H01L21/683 ,  H01L21/68 ,  G01N21/95

CPC classification number: G01B11/24 ,  H01L21/6833 ,  H01L21/68 ,  G01N21/9501

Abstract: Embodiments disclosed herein may further comprise a semiconductor processing tool. In an embodiment, the tool comprises a chamber with a chuck within the chamber. In an embodiment, the chuck is an electrostatic chuck. The tool may further comprise a laser configured to propagate a laser beam through a viewport through a chamber wall, with a beam splitter configured to separate the laser beam into a plurality of parallel beams. In an embodiment, the plurality of parallel beams are propagated towards the chuck. In an embodiment, the processing tool further comprises a camera configured to image the plurality of parallel beams, where the plurality of parallel beams are configured to reflect off a substrate on the chuck towards the camera.

公开(公告)号：US11651966B2

公开(公告)日：2023-05-16

申请号：US17336580

申请日：2021-06-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik Ramaswamy ,  Yang Yang ,  Kenneth Collins ,  Steven Lane ,  Gonzalo Monroy ,  Yue Guo

IPC: H01L21/3065 ,  H01J37/305 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/3053 ,  H01J37/3255 ,  H01J37/32137 ,  H01J37/32568 ,  H01L21/67069 ,  H01J37/32091 ,  H01J37/32119 ,  H01J37/32183 ,  H01J2237/002 ,  H01J2237/3174 ,  H01J2237/3341

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

公开(公告)号：US11448977B1

公开(公告)日：2022-09-20

申请号：US17484605

申请日：2021-09-24

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Michael D. Willwerth ,  Yang Yang

IPC: G03F7/20 ,  G03F7/42

Abstract: Apparatus for processing substrates can include a gas distribution plate that includes an upper plate and a lower plate and a solid disk between the upper plate and the lower plate. Each of the upper plate and the lower plate has a central region and an outer region surrounding the central region, the central region being solid and the outer region having a plurality of through holes. The upper plate and the lower plate are coaxially aligned along a central axis extending through a center of the central region of the upper plate and a center of the central region of the lower plate. The solid disk is coaxially aligned with the upper plate and the lower plate. The solid disk is configured to block transmission of ultraviolet radiation through the solid disk.