公开(公告)号：US20090152466A1

公开(公告)日：2009-06-18

申请号：US12181871

申请日：2008-07-29

Applicant: Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

Inventor： Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

IPC: H01L27/14

CPC classification number: G01J5/20 ,  B81B3/007 ,  B81B2201/0207 ,  B81B2203/0118 ,  G01J5/02 ,  G01J5/023 ,  G01J5/024

Abstract: Provided are a microbolometer having a cantilever structure and a method of manufacturing the same, and more particularly, a microbolometer having a three-dimensional cantilever structure, which is improved from a conventional two-dimensional cantilever structure, and a method of manufacturing the same. The method includes providing a substrate including a read-out integrated circuit and a reflective layer for forming an absorption structure, forming a sacrificial layer on the substrate, forming a cantilever structure having an uneven cross-section in the sacrificial layer, forming a sensor part isolated from the substrate by the cantilever structure, and removing the sacrificial layer.

Abstract translation: 本发明提供一种具有悬臂结构的微电热计及其制造方法，特别是具有三维悬臂结构的微电热计，其从传统的二维悬臂结构得到改进，及其制造方法。 该方法包括提供包括读出集成电路和用于形成吸收结构的反射层的衬底，在衬底上形成牺牲层，在牺牲层中形成具有不均匀横截面的悬臂结构，形成传感器部分 通过悬臂结构从衬底隔离，并去除牺牲层。

公开(公告)号：US4849070A

公开(公告)日：1989-07-18

申请号：US243750

申请日：1988-09-14

Applicant: Vincent T. Bly ,  Alan P. Bradford ,  J. Thomas Cox

Inventor： Vincent T. Bly ,  Alan P. Bradford ,  J. Thomas Cox

IPC: G01L9/00 ,  H01L27/16

CPC classification number: B81C1/00476 ,  G01L9/0042 ,  H01L27/16 ,  B81B2201/0207 ,  B81B2201/042

Abstract: A sublimable layer is deposited on a substrate, holes are etched through sublimable layer, a thin-layer structure is deposited on portions of the remaining sublimable layer, and a thick structural support material is deposited to cover the sides and bottoms of the holes and portions of the thin-layer structure. When the sublimable layer is sublimed with the heat, photon enhancement (ultraviolet light) and oxygen purging, a structure is left which consists of a thin layer or layers supported by posts above a substrate.

Abstract translation: 将升华层沉积在基材上，通过可升华层蚀刻孔，在剩余的可升华层的部分上沉积薄层结构，沉积厚的结构载体材料以覆盖孔的侧面和底部， 部分薄层结构。 当升华层用热，光子增强（紫外光）和氧气吹扫升华时，留下由薄层或由基板上方的柱支撑的薄层组成的结构。

公开(公告)号：US09975760B2

公开(公告)日：2018-05-22

申请号：US15195061

申请日：2016-06-28

Applicant: Robert Bosch GmbH

Inventor： Mikko VA Suvanto

IPC: H01L29/84 ,  B81B7/00 ,  B81C1/00 ,  H04R1/32

CPC classification number: B81B7/008 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2201/0292 ,  B81B2207/012 ,  B81C1/0023 ,  H01L2224/48137 ,  H04R1/326 ,  H04R2201/003

Abstract: A microelectromechanical system (MEMS) sensor device includes a package housing having a top member, bottom member, and a spacer coupled the top member to the bottom member, defining a cavity. At least one sensor circuit and a MEMS sensor disposed within the cavity of the package housing. A first opening formed on the package housing a control device embedded within the package housing is electrically coupled to the sensor circuit and is controlled to tune the MEMS sensor from a directional mode to an omni-directional mode.

公开(公告)号：US09957154B2

公开(公告)日：2018-05-01

申请号：US15320719

申请日：2015-07-07

Applicant: ULIS

Inventor： Jérôme Favier ,  David Bunel

IPC: H01L23/00 ,  H01L31/18 ,  B81B7/00 ,  B81C1/00 ,  G01J5/20

CPC classification number: B81B7/0038 ,  B81B2201/0207 ,  B81C1/00269 ,  B81C1/00285 ,  B81C2203/0145 ,  B81C2203/019 ,  G01J5/20 ,  H01L23/564 ,  H01L31/186 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A method of manufacturing a device having a microelectronic component housed in a hermetically sealed vacuum housing, including forming a getter in said housing, pumping out and heating the device to degas elements housed in said housing, after said pumping, hermetically sealing the housing in fluxless fashion.Further, each material forming the device likely to degas into the inner space is a mineral material, the getter is capable of substantially trapping hydrogen only and is inert to oxygen and/or to nitrogen and the heating and the sealing are performed at a temperature lower than 300° C.

公开(公告)号：US09890038B2

公开(公告)日：2018-02-13

申请号：US15049339

申请日：2016-02-22

Applicant: Versana Micro Inc

Inventor： Bishnu Prasanna Gogoi

IPC: B81B7/02 ,  H01L27/14 ,  H01L27/22 ,  H01L27/16 ,  H05K7/02 ,  H01L41/113

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

公开(公告)号：US20170369305A1

公开(公告)日：2017-12-28

申请号：US15195061

申请日：2016-06-28

Applicant: Robert Bosch GmbH

Inventor： Mikko VA Suvanto

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/008 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2201/0292 ,  B81B2207/012 ,  B81C1/0023 ,  H01L2224/48137 ,  H04R1/326 ,  H04R2201/003

Abstract: A microelectromechanical system (MEMS) sensor device includes a package housing having a top member, bottom member, and a spacer coupled the top member to the bottom member, defining a cavity. At least one sensor circuit and a MEMS sensor disposed within the cavity of the package housing. A first opening formed on the package housing a control device embedded within the package housing is electrically coupled to the sensor circuit and is controlled to tune the MEMS sensor from a directional mode to an omni-directional mode.

公开(公告)号：US09708181B2

公开(公告)日：2017-07-18

申请号：US15048106

申请日：2016-02-19

Applicant: Raytheon Company

Inventor： Adam M. Kennedy ,  Buu Q. Diep ,  Stephen H. Black ,  Tse E. Wong ,  Thomas Allan Kocian ,  Gregory D. Tracy

IPC: H01L21/50 ,  B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00333 ,  B81B7/0048 ,  B81B7/0051 ,  B81B2201/0207 ,  B81C1/00825 ,  B81C2203/035

Abstract: A sealed package having a device disposed on a wafer structure and a lid structure boned to the device wafer. The device wafer includes: a substrate; a metal ring disposed on a surface portion of substrate around the device and a bonding material disposed on the metal ring. The metal ring extends laterally beyond at least one of an inner and outer edge of the bonding material. A first layer of the metal ring includes a stress relief buffer layer having a higher ductility than that of the surface portion of the substrate and a width greater than the width of the bonding material. The metal ring extends laterally beyond at least one of the inner and outer edges of the bonding material. The stress relief buffer layer has a coefficient of thermal expansion greater than the coefficient of expansion of the surface portion of the substrate and less than the coefficient of expansion of the bonding material.

公开(公告)号：US20170113928A1

公开(公告)日：2017-04-27

申请号：US15400665

申请日：2017-01-06

Applicant: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V

Inventor： Andreas GOEHLICH ,  Andreas JUPE ,  Holger VOGT

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00619 ,  B81B7/0003 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/042 ,  B81C1/0019 ,  B81C2201/0187 ,  H01L23/4821 ,  H01L23/5256

Abstract: What is described is a method for producing a device having providing a substrate having an electrode which is exposed at a main side of the substrate. In addition, the method has forming a micro or nanostructure which has a spacer which is based on the electrode, wherein forming has the steps of: depositing a sacrificial layer on the main side, wherein the sacrificial layer has amorphous silicon or silicon dioxide; patterning a hole and/or trench into the sacrificial layer by means of a DRIE process; coating the sacrificial layer by means of ALD or MOCVD so that material of the nano or microstructure forms at the hole and/or trench, and removing the sacrificial layer.

公开(公告)号：US20170011977A1

公开(公告)日：2017-01-12

申请号：US15270145

申请日：2016-09-20

Applicant: RAYTHEON COMPANY

Inventor： Roland W. Gooch ,  Buu Q. Diep ,  Adam M. Kennedy ,  Stephen H. Black ,  Thomas A. Kocian

IPC: H01L23/10 ,  H01L27/146 ,  H01L23/26 ,  B81B7/00 ,  B81C1/00

CPC classification number: H01L23/10 ,  B81B7/0038 ,  B81B2201/0207 ,  B81C1/00269 ,  B81C2203/035 ,  H01L21/52 ,  H01L21/76841 ,  H01L23/26 ,  H01L23/49866 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14683 ,  H01L27/1469 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.

Abstract translation: 电子装置及其制造方法。 一种或多种方法可以包括提供具有空腔和围绕空腔的表面的盖晶片和具有检测器装置和参考装置的装置晶片。 在某些实例中，可以将钛材料的阻焊层沉积到盖晶片的表面上。 可以进一步激活钛材料的阻焊层作为吸气剂。 在各种示例中，盖晶片和器件晶片可以使用焊料接合在一起，并且钛材料的阻焊层可以防止焊料接触盖晶片的表面。

公开(公告)号：US09520332B2

公开(公告)日：2016-12-13

申请号：US14736042

申请日：2015-06-10

Applicant: RAYTHEON COMPANY

Inventor： Roland W. Gooch ,  Buu Q. Diep ,  Adam M. Kennedy ,  Stephen H. Black ,  Thomas A. Kocian

IPC: H01L23/48 ,  H01L23/20 ,  H01L21/00 ,  H01L21/30 ,  H01L23/10 ,  H01L23/498 ,  H01L21/768 ,  B81B7/00 ,  H01L23/26 ,  B81C1/00 ,  H01L21/52 ,  H01L27/146

CPC classification number: H01L23/10 ,  B81B7/0038 ,  B81B2201/0207 ,  B81C1/00269 ,  B81C2203/035 ,  H01L21/52 ,  H01L21/76841 ,  H01L23/26 ,  H01L23/49866 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14683 ,  H01L27/1469 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.