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公开(公告)号：US20170297909A1
公开(公告)日：2017-10-19
申请号：US15636463
申请日：2017-06-28
Applicant: InvenSense, Inc.
Inventor： Jong Il Shin , Peter Smeys , Daesung Lee
CPC classification number: B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81C1/00214 , B81C1/00293 , B81C2203/0118 , B81C2203/035 , G01P15/0802
Abstract: An apparatus includes a cavity within a substrate. A MEMS structure is within the cavity, wherein the cavity includes the MEMS structure. A trench is connected to the cavity, wherein the trench is not directly opposite the MEMS structure. An oxide layer lines the trench and the cavity. A seal layer seals the trench and traps a predetermined pressure within the cavity and the trench.
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公开(公告)号：US20170297902A1
公开(公告)日：2017-10-19
申请号：US15130077
申请日：2016-04-15
Inventor： HUNG-HUA LIN , PING-YIN LIU , KUAN-LIANG LIU , CHIA-SHIUNG TSAI , ALEXANDER KALNITSKY
CPC classification number: B81C1/00269 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/07 , B81B2207/092 , B81C2203/0118 , B81C2203/036 , B81C2203/0792
Abstract: A semiconductor structure includes a first substrate including a cavity extended into the first substrate, a device disposed within the cavity, a first dielectric layer disposed over the first substrate and a first conductive structure surrounded by the first dielectric layer, and a second substrate including a second dielectric layer disposed over the second substrate and a second conductive structure surrounded by the second dielectric layer, wherein the first conductive structure is bonded with the second conductive structure and the first dielectric layer is bonded with the second dielectric layer to seal the cavity.
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公开(公告)号：US09776854B2
公开(公告)日：2017-10-03
申请号：US15068511
申请日：2016-03-11
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Akira Fujimoto , Naofumi Nakamura , Tamio Ikehashi
IPC: H01L29/786 , B81B3/00 , B81C1/00
CPC classification number: B81B3/0072 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81C1/00365 , B81C2201/0167 , B81C2201/0169 , G01P15/0802 , G01P15/125
Abstract: According to one embodiment, a method of manufacturing a device is provided. A amorphous metal layer is formed. A metal layer containing metal and having a crystal plane oriented to a predetermined plane is formed on the amorphous metal layer. A first layer containing semiconductor including silicon, and metal identical to the metal contained in the metal layer is formed on the metal layer. The first layer is changed to a second layer containing a compound of the semiconductor and the metal, the compound having a crystal plane oriented to the predetermined plane. A third layer containing polycrystalline silicon-germanium and having a crystal plane oriented to the predetermined plane is formed on the second layer.
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公开(公告)号：US20170248628A1
公开(公告)日：2017-08-31
申请号：US15444162
申请日：2017-02-27
Applicant: mCube, Inc.
Inventor： Sanjay BHANDARI , Ken WANG , Ben LEE
CPC classification number: G01P15/08 , B81B7/0074 , B81B7/0087 , B81B2201/0235 , B81B2201/0242 , B81B2201/0257 , B81B2201/0264 , B81B2201/0292 , B81B2201/047 , B81B2207/012 , G01P15/0802 , H01L2224/32145 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
Abstract: A method for operating an electronic device comprising a first and second MEMS device and a semiconductor substrate disposed upon a mounting substrate includes subjecting the first MEMS device and the second MEMS device to physical perturbations, wherein the physical perturbations comprise first physical perturbations associated with the first MEMS device and second physical perturbations associated with the second MEMS device, wherein the first physical perturbations and the second physical perturbations are substantially contemporaneous, determining in a plurality of CMOS circuitry formed within the one or more semiconductor substrates, first physical perturbation data from the first MEMS device in response to the first physical perturbations and second physical perturbation data from the second MEMS device in response to the second physical perturbations, determining output data in response to the first physical perturbation data and to the second physical perturbation data, and outputting the output data.
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公开(公告)号：US09745189B1
公开(公告)日：2017-08-29
申请号：US15497741
申请日：2017-04-26
Applicant: NXP USA, Inc.
Inventor： Aaron A. Geisberger
CPC classification number: B81C1/00626 , B81B7/0048 , B81B2201/0235 , B81B2201/0242 , B81B2203/0307
Abstract: An embodiment of a microelectromechanical systems (MEMS) device is provided, which includes a substrate; a proof mass positioned in space above a surface of the substrate, wherein the proof mass is configured to pivot on a rotational axis parallel to the substrate; an anchor structure that includes two or more separated anchors mounted to the surface of the substrate, wherein the anchor structure is aligned with the rotational axis; and an isolation sub-frame structure that surrounds the anchor structure and is flexibly connected to each of the two or more separated anchors of the anchor structure, where the proof mass is flexibly connected to the isolation sub-frame structure.
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Patent Agency Ranking
公开(公告)号：US09738516B2
公开(公告)日：2017-08-22
申请号：US14699094
申请日：2015-04-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chung-Yen Chou , Chih-Jen Chan , Chia-Shiung Tsai , Ru-Liang Lee , Yuan-Chih Hsieh
CPC classification number: B81C1/00595 , B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2201/0271 , B81B2201/0292 , B81B2203/0109 , B81C1/00357 , B81C1/00801 , B81C2201/0132
Abstract: A method of forming an IC (integrated circuit) device is provided. The method includes receiving a first wafer including a first substrate and including a plasma-reflecting layer disposed on an upper surface thereof. The plasma-reflecting layer is configured to reflect a plasma therefrom. A dielectric protection layer is formed on a lower surface of a second wafer, wherein the second wafer includes a second substrate. The second wafer is bonded to the first wafer, such that a cavity is formed between the plasma-reflecting layer and the dielectric protection layer. An etch process is performed with the plasma to form an opening extending from an upper surface of the second wafer and through the dielectric protection layer into the cavity. A resulting structure of the above method is also provided.
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公开(公告)号：US20170233244A1
公开(公告)日：2017-08-17
申请号：US15503192
申请日：2015-05-11
Applicant: Wuxi Wio Technology Co., Ltd.
Inventor： Qiao Chen , Huikai Xie
CPC classification number: B81B3/0037 , B81B2201/0235 , B81B2201/0242 , B81B2201/042 , B81B2203/0118 , B81B2203/0136 , B81C1/00 , B81C1/0015 , B81C2201/013 , H01G5/16
Abstract: A MEMS self-aligned high-and-low comb tooth and manufacturing method thereof, the comb tooth having a lifting structure, the lifting structure generating a displacement in the vertical direction to drive the movement of a movable comb tooth or a fixed comb tooth attached thereto. The manufacturing method thereof adopts a silicon wafer, the lifting structure and the comb tooth are sequentially formed on a mechanical structure layer, the fixed comb tooth and the movable comb tooth are formed with the same etching process, and the stress in the lifting structure displaces the fixed comb tooth and the movable comb tooth in the vertical direction, thus forming the self-aligned high-and-low comb tooth.
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公开(公告)号：US09728652B2
公开(公告)日：2017-08-08
申请号：US13358316
申请日：2012-01-25
Applicant: Klaus Elian , Franz-Peter Kalz , Horst Theuss
Inventor： Klaus Elian , Franz-Peter Kalz , Horst Theuss
CPC classification number: H01L29/84 , B81B2201/0235 , B81B2201/025 , B81B2201/0292 , B81B2203/0361 , B81C1/00246 , G01L1/20 , G01P15/124
Abstract: A sensor device includes a semiconductor chip. The semiconductor chip has a sensing region sensitive to mechanical loading. A pillar is mechanically coupled to the sensing region.
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公开(公告)号：US09718670B2
公开(公告)日：2017-08-01
申请号：US14329109
申请日：2014-07-11
Applicant: Seiko Epson Corporation
Inventor： Satoru Tanaka
CPC classification number: B81B3/0021 , B81B3/0013 , B81B3/0051 , B81B2201/0235 , B81B2201/0242
Abstract: A functional device includes a movable body displaceable along a first axis, a fixed section configured to support the movable body in a coupling section, a movable electrode section extending from the movable body, a fixed electrode section arranged to be opposed to the movable electrode section, and an extending section extending from the fixed section and including an opposed section opposed to a side surface of the movable electrode section. The distance between the opposed section and the movable electrode section is smaller than the distance between the fixed electrode section and the movable electrode section.
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公开(公告)号：US20170210614A1
公开(公告)日：2017-07-27
申请号：US15007762
申请日：2016-01-27
Inventor： CHUN-WEN CHENG , JIOU-KANG LEE
IPC: B81B3/00
CPC classification number: B81C1/00825 , B81B3/0008 , B81B3/001 , B81B2201/0235 , B81B2201/0242
Abstract: A device includes a substrate, a first structure, a second structure, a third structure and a bumper. The first structure is over the substrate. The second structure is over the substrate, wherein the second structure has a first end coupled to the first structure. The third structure is over the substrate, wherein the third structure is coupled to a second end of the second structure. The bumper is between the substrate and the third structure, wherein the bumper is a multi-layered bumper including a first conductive feature, a dielectric feature and a second conductive feature. The dielectric feature is over the first conductive feature. The second conductive feature is over the dielectric feature and electrically connected to the first conductive feature.
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