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    POLISHING COMPOSITION FOR NICKEL-PHOSPHOROUS-COATED MEMORY DISKS
    61.
    发明申请
    POLISHING COMPOSITION FOR NICKEL-PHOSPHOROUS-COATED MEMORY DISKS 有权
    用于镍 - 磷光体存储盘的抛光组合物

    公开(公告)号：US20130313226A1

    公开(公告)日：2013-11-28

    申请号：US13478292

    申请日：2012-05-23

    Applicant: Selvaraj Palanisamy Chinnathambi ,  Haresh Siriwardane

    Inventor： Selvaraj Palanisamy Chinnathambi ,  Haresh Siriwardane

    IPC: C09K13/00 ,  B44C1/22

    CPC classification number: C09K3/1463 ,  B81C2201/0104 ,  H01L21/30625 ,  H01L21/3212

    Abstract: The invention provides a chemical-mechanical polishing composition containing wet-process silica, an oxidizing agent that oxidizes nickel-phosphorous, a chelating agent, polyvinyl alcohol, and water. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

    Abstract translation: 本发明提供一种含有湿法二氧化硅，氧化镍磷的氧化剂，螯合剂，聚乙烯醇和水的化学机械抛光组合物。 本发明还提供了一种通过使基底与抛光垫和化学机械抛光组合物接触来对基底，特别是镍 - 磷基底进行化学机械抛光的方法，相对于基底移动抛光垫和抛光组合物， 并研磨基底的至少一部分以抛光基底。

    Method of forming non-planar membranes using CMP
    62.
    发明授权
    Method of forming non-planar membranes using CMP 有权
    使用CMP形成非平面膜的方法

    公开(公告)号：US08580691B2

    公开(公告)日：2013-11-12

    申请号：US13232012

    申请日：2011-09-14

    Applicant: Andrew B. Graham ,  Gary Yama ,  Gary O'Brien

    Inventor： Andrew B. Graham ,  Gary Yama ,  Gary O'Brien

    IPC: H01L21/302 ,  H01L21/461

    CPC classification number: B81C1/00103 ,  B81B2203/0376 ,  B81C2201/0104

    Abstract: A method of shaping a substrate in one embodiment includes providing a first support layer, providing a first shaping pattern on the first support layer, providing a substrate on the first shaping pattern, performing a first chemical mechanical polishing (CMP) process on the substrate positioned on the first shaping pattern, and removing the once polished substrate from the first shaping pattern.

    Abstract translation: 在一个实施例中，成形衬底的方法包括提供第一支撑层，在第一支撑层上提供第一成形图案，在第一成形图案上提供衬底，在定位的衬底上执行第一化学机械抛光（CMP）工艺 在第一成形图案上，并且从第一成形图案去除一次抛光的基板。

    Electrochemical fabrication methods for producing multilayer structures including the use of diamond machining in the planarization of deposits of material
    63.
    发明申请
    Electrochemical fabrication methods for producing multilayer structures including the use of diamond machining in the planarization of deposits of material 审中-公开
    用于生产多层结构的电化学制造方法，包括在平坦化材料沉积中使用金刚石加工

    公开(公告)号：US20050202180A1

    公开(公告)日：2005-09-15

    申请号：US11029165

    申请日：2005-01-03

    Applicant: Adam Cohen ,  Uri Frodis ,  Michael Lockard ,  Ananda Kumar ,  Gang Zhang ,  Dennis Smalley

    Inventor： Adam Cohen ,  Uri Frodis ,  Michael Lockard ,  Ananda Kumar ,  Gang Zhang ,  Dennis Smalley

    IPC: B05D1/38 ,  C08K3/00 ,  C25D3/30 ,  C25D3/38 ,  C25D3/48 ,  C25D5/02 ,  C25D5/10 ,  C25D21/12 ,  H01L21/288 ,  H01L21/301 ,  H01L21/302 ,  H01L21/4763 ,  H01L21/768

    CPC classification number: C25D5/48 ,  B33Y10/00 ,  B81C1/00492 ,  B81C99/0065 ,  B81C2201/0104 ,  B81C2201/0197 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76885 ,  Y10T156/1052

    Abstract: Electrochemical fabrication methods for forming single and multilayer mesoscale and microscale structures are disclosed which include the use of diamond machining (e.g. fly cutting or turning) to planarize layers. Some embodiments focus on systems of sacrificial and structural materials which are useful in Electrochemical fabrication and which can be diamond machined with minimal tool wear (e.g. Ni—P and Cu, Au and Cu, Cu and Sn, Au and Cu, Au and Sn, and Au and Sn—Pb), where the first material or materials are the structural materials and the second is the sacrificial material). Some embodiments focus on methods for reducing tool wear when using diamond machining to planarize structures being electrochemically fabricated using difficult-to-machine materials (e.g. by depositing difficult to machine material selectively and potentially with little excess plating thickness, and/or pre-machining depositions to within a small increment of desired surface level (e.g. using lapping or a rough cutting operation) and then using diamond fly cutting to complete he process, and/or forming structures or portions of structures from thin walled regions of hard-to-machine material as opposed to wide solid regions of structural material.

    Abstract translation: 公开了用于形成单层和多层中尺度和微结构的电化学制造方法，其包括使用金刚石加工（例如飞切或车削）来平坦化层。 一些实施例集中于可用于电化学制造的牺牲和结构材料的系统，并且可以以最小的工具磨损（例如Ni-P和Cu，Au和Cu，Cu和Sn，Au和Cu，Au和Sn， 和Au和Sn-Pb），其中第一材料或材料是结构材料，第二材料是牺牲材料）。 一些实施例着重于在使用金刚石加工以平面化使用难以加工的材料进行电化学制造的结构（例如，通过沉积难以机械材料选择性且潜在地具有少量多余电镀厚度和/或预加工沉积 到所需表面水平的小增量（例如使用研磨或粗切割操作），然后使用金刚石飞切切割来完成其加工，和/或从硬质材料的薄壁区域形成结构或部分结构 而不是结构材料的宽固体区域。

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