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    Indirectly heated button cathode for an ion source
    61.
    发明申请
    Indirectly heated button cathode for an ion source 有权
    用于离子源的间接加热按钮阴极

    公开(公告)号：US20040061068A1

    公开(公告)日：2004-04-01

    申请号：US10259827

    申请日：2002-09-30

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Marvin Farley ,  Takao Sakase ,  Shu Satoh ,  Geoffrey Ryding ,  Peter Rose ,  Christos Christou

    IPC: H01J027/00

    CPC classification number: H01J37/08 ,  H01J1/20 ,  H01J1/26 ,  H01J27/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/082

    Abstract: An indirectly heated button cathode for use in the ion source of an ion implanter has a button member formed of a slug piece mounted in a collar piece. The slug piece is thermally insulated from the collar piece to enable it to operate at a higher temperature so that electron emission is enhanced and concentrated over the surface of the slug piece. The slug piece and collar piece can be both of tungsten. Instead the slug piece may be of tantalum to provide a lower thermionic work function. The resultant concentrated plasma in the ion source is effective to enhance the production of higher charge state ions, particularly Pnullnullnull for subsequent acceleration for high energy implantation.

    Abstract translation: 用于离子注入机的离子源的间接加热纽扣阴极具有由安装在轴环件中的塞片形成的纽扣件。 芯块与套环件绝热，使其能够在更高的温度下工作，从而使电子发射增强并集中在芯块的表面上。 lug lug piece piece piece。。。。。。。。。。 替代地，块塞可以是钽以提供较低的热离子功能。 在离子源中产生的浓缩等离子体有效地增强高电荷状态离子的产生，特别是用于高能量注入的后续加速的P +++。

    Scanning electron microscope
    62.
    发明授权
    Scanning electron microscope 失效
    扫描电子显微镜

    公开(公告)号：US5376792A

    公开(公告)日：1994-12-27

    申请号：US52654

    申请日：1993-04-26

    Applicant: Frederick H. Schamber ,  Raymond E. Turocy

    Inventor： Frederick H. Schamber ,  Raymond E. Turocy

    IPC: H01J37/28 ,  H01J37/26

    CPC classification number: H01J37/28 ,  H01J2237/0268 ,  H01J2237/061 ,  H01J2237/06308

    Abstract: An improved scanning electron microscope is disclosed which includes a compact, replaceable electron beam emitter assembly and concentric liner tubes. The concentric liner tubes extend through a central portion of electromagnetic lenses for forming an evacuated path for the electron beam. An outer sealing jacket is provided for forming a vacuum seal with the column assembly sufficient to maintain a vacuum within the outer sealing jacket. A conductive inner liner tube positioned within the outer sealing jacket is adapted to have the electron beam pass therethrough. The inner liner tube provides supports for spray baffles and/or beam shaping orifices. The improved electron beam emitter assembly within the gun assembly includes a filament clamped between a front plate and a back plate by clamping screws. The clamping screws additionally hold an adjustable grid against the front plate.

    Abstract translation: 公开了一种改进的扫描电子显微镜，其包括紧凑的，可更换的电子束发射器组件和同心衬管。 同心衬管延伸穿过电磁透镜的中心部分，以形成用于电子束的真空路径。 提供外密封套，用于与柱组件形成真空密封，足以在外密封套内保持真空。 位于外部密封套内的导电内衬管适于使电子束通过。 内衬管提供喷雾挡板和/或束形成孔的支撑。 枪组件内的改进的电子束发射器组件包括通过夹紧螺钉夹在前板和后板之间的细丝。 夹紧螺丝另外保持一个可调整的格栅抵靠前板。

    Electron Beam Emitters with Ruthenium Coating
    64.
    发明申请
    Electron Beam Emitters with Ruthenium Coating 审中-公开

    公开(公告)号：US20180174794A1

    公开(公告)日：2018-06-21

    申请号：US15588006

    申请日：2017-05-05

    Applicant: KLA-Tencor Corporation

    Inventor： Gildardo R. Delgado ,  Edgardo Garcia Berrios ,  Frances Hill ,  Rudy Garcia

    IPC: H01J37/06 ,  H01J37/28

    CPC classification number: H01J37/06 ,  H01J37/28 ,  H01J2237/061

    Abstract: An emitter with a protective cap layer on an exterior surface of the emitter is disclosed. The emitter can have a diameter of 100 nm or less. The protective cap layer includes ruthenium. Ruthenium is resistant to oxidation and carbon growth. The protective cap layer also can have relatively low sputter yields to withstand erosion by ions. The emitter may be part of a system with an electron beam source. An electric field can be applied to the emitter and an electron beam can be generated from the emitter. The protective cap layer may be applied to the emitter by sputter deposition, atomic layer deposition (ALD), or ion sputtering.

    Collision ionization ion source
    65.
    发明授权
    Collision ionization ion source 有权

    公开(公告)号：US09899181B1

    公开(公告)日：2018-02-20

    申请号：US15405139

    申请日：2017-01-12

    Applicant: FEI Company

    Inventor： Gregory A. Schwind ,  Aurelien Philippe Jean Maclou Botman ,  Sean Kellogg ,  Leon van Kouwen ,  Luigi Mele

    IPC: H01J27/20 ,  H01J37/26 ,  H01J37/08

    CPC classification number: H01J27/20 ,  H01J27/205 ,  H01J37/08 ,  H01J37/26 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/082

    Abstract: A collision ionization ion source comprising: A pair of stacked plates, sandwiched about an intervening gap; An input zone (aperture), provided in a first of said plates, to admit an input beam of charged particles to said gap; An output zone (aperture), located opposite said input zone and provided in the second of said plates, to allow emission of a flux of ions from said gap; A gas space, between said input and output zones, in which gas can be ionized by said input beam so as to produce said ions; A supply duct in said gap, for supplying a flow of said gas to said gas space, and comprising: An emergence orifice, opening into said gas space; An entrance orifice, connectable to a gas supply, wherein said duct comprises at least one transition region between said entrance orifice and said emergence orifice in which an inner height of said duct, measured normal to the plates, decreases from a first height value to a second height value.

    ION SOURCE CATHODE SHIELD
    67.
    发明申请
    ION SOURCE CATHODE SHIELD 有权

    公开(公告)号：US20170207054A1

    公开(公告)日：2017-07-20

    申请号：US15410711

    申请日：2017-01-19

    Applicant: Axcelis Technologies, Inc.

    Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh ,  Paul b. Silverstein

    IPC: H01J17/06 ,  H01J27/08 ,  H01J17/18

    CPC classification number: H01J17/06 ,  H01J17/186 ,  H01J27/022 ,  H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/061

    Abstract: An ion source has an arc chamber having an arc chamber body. An electrode extends into an interior region of the arc chamber body, and a cathode shield has a body that is cylindrical having an axial hole. The axial hole is configured to pass the electrode therethrough. First and second ends of the body have respective first and second gas conductance limiters. The first gas conductance limiter extends from an outer diameter of the body and has a U-shaped lip. The second gas conductance limiter has a recess for a seal to protect the seal from corrosive gases and maintain an integrity of the seal. A gas source introduces a gas to the arc chamber body. A liner has an opening configured to pass the cathode shield therethrough, where the liner has a recess. A gap is defined between the U-shaped lip and the liner, wherein the U-shaped lip reduces a conductance of gas into the gap and the recess further reduces conductance of gas into the region.

    SYSTEMS AND METHODS FOR ION BEAM ETCHING
    68.
    发明申请
    SYSTEMS AND METHODS FOR ION BEAM ETCHING 审中-公开

    公开(公告)号：US20170140953A1

    公开(公告)日：2017-05-18

    申请号：US12244683

    申请日：2008-10-02

    Applicant: Hari Hegde

    Inventor： Hari Hegde

    IPC: H01L21/306 ,  C23F1/08 ,  B44C1/22

    CPC classification number: H01L21/67063 ,  H01J27/18 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/061 ,  H01J2237/065 ,  H01J2237/3151

    Abstract: An ion system for use in an etching system for etching at least a wafer using a gas. The ion system may include an ion chamber for containing charged particles generated from the gas. The ion system may also include a magnetic device surrounding at least a portion of the ion chamber. The magnetic device may affect the distribution of the charged particles in the ion chamber. The ion system may also include a grid assembly disposed between the ion chamber and the wafer when the wafer is etched. The charged particles may be provided through the grid assembly to etch the wafer when the wafer is etched.

    Uniformity control using adjustable internal antennas
    70.
    发明授权
    Uniformity control using adjustable internal antennas 有权

    公开(公告)号：US09613777B2

    公开(公告)日：2017-04-04

    申请号：US14484018

    申请日：2014-09-11

    Applicant: Varian Semiconductor Equipment Associates, Inc.

    Inventor： Alexandre Likhanskii ,  Svetlana B. Radovanov

    IPC: H01J37/32 ,  H01J37/02 ,  H01J37/08

    CPC classification number: H01J37/023 ,  H01J37/08 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174 ,  H01J2237/061 ,  H01J2237/0817

    Abstract: A plasma chamber having improved plasma density is disclosed. The plasma chamber utilizes internal antennas. These internal antennas can be manipulated in a variety of ways to control the uniformity of the plasma density. In some embodiments, the conductive coil within the antenna is translated from a first location to a second location. For example, the entirety of the internal antennas may be translated within the plasma chamber. In another embodiment, the conductive coil disposed within the outer tube is translated relative to its outer tube. In another embodiment, the conductive coil within the outer tube may be bent and may be rotated within the outer tube. In another embodiment, the outer tube may also be bent and rotated. In other embodiments, ferromagnetic segments may be disposed in the outer tube to focus or block the electromagnetic energy emitted from the conductive coil.

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