MAGNETIC DEFLECTOR FOR AN ELECTRON COLUMN
    61.
    发明申请
    MAGNETIC DEFLECTOR FOR AN ELECTRON COLUMN 有权
    用于电子柱的磁性偏转器

    公开(公告)号:US20100148086A1

    公开(公告)日:2010-06-17

    申请号:US12600266

    申请日:2008-05-15

    Abstract: The present invention relates, in general, to a deflector for microcolumns for generating electron beams, and, more particularly, to a deflector capable of scanning or shifting electron beams or functioning as a stigmator using a magnetic field. The deflector (100) according to the present invention includes one or more deflector electrodes. Each of the deflector electrodes includes a core (12) made of a conductor or a semiconductor, and a coil (11) wound around the core (12).

    Abstract translation: 本发明一般涉及用于产生电子束的微柱偏转器,更具体地,涉及一种能够扫描或移动电子束或用作使用磁场的标称器的偏转器。 根据本发明的偏转器(100)包括一个或多个偏转器电极。 每个偏转器电极包括由导体或半导体制成的芯体(12)和缠绕在芯部(12)上的线圈(11)。

    ELECTRON BEAM PROCESSING DEVICE
    62.
    发明申请
    ELECTRON BEAM PROCESSING DEVICE 有权
    电子束加工装置

    公开(公告)号:US20100012860A1

    公开(公告)日:2010-01-21

    申请号:US12502567

    申请日:2009-07-14

    Applicant: Franz Vokurka

    Inventor: Franz Vokurka

    Abstract: An electron beam processing device includes a chamber housing that defines a chamber interior space and has a first opening. A carriage is movable along the first opening. An electron beam generator is disposed on the carriage so that the generated electron beam passes through the first opening when the carriage moves along the first opening. A disk is disposed between the chamber housing and the carriage and is rotatable about a rotational axis, which is perpendicular to the first opening, at least between a first rotational position and a second rotational position. The disk has a second opening spaced from the rotational axis of the disk in the radial direction. The rotational axis of the disk is disposed so that the first opening always overlaps the second opening at least along an electron beam propagation axis when the disk rotates between the first and second rotational positions.

    Abstract translation: 电子束处理装置包括限定腔室内部空间并具有第一开口的腔室壳体。 托架可沿着第一开口移动。 电子束发生器设置在滑架上,使得当滑架沿着第一开口移动时,所产生的电子束通过第一开口。 盘被布置在腔室壳体和托架之间,并且可绕至少在第一旋转位置和第二旋转位置之间绕与第一开口垂直的旋转轴线旋转。 盘具有沿径向与盘的旋转轴线间隔开的第二开口。 盘的旋转轴线设置成使得当盘在第一和第二旋转位置之间旋转时,至少第一开口总是与电子束传播轴线重叠。

    APPARATUS AND METHODS FOR ION BEAM IMPLANTATION USING RIBBON AND SPOT BEAMS
    63.
    发明申请
    APPARATUS AND METHODS FOR ION BEAM IMPLANTATION USING RIBBON AND SPOT BEAMS 有权
    使用RIBBON和SPOT BEA的离子束植入的装置和方法

    公开(公告)号:US20090189096A1

    公开(公告)日:2009-07-30

    申请号:US12194515

    申请日:2008-08-19

    Abstract: An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.

    Abstract translation: 公开了一种具有多种工作模式的离子注入装置。 离子注入装置具有离子源和用于从其提取带状离子束的离子提取装置。 离子注入装置包括用于选择具有特定质荷比的离子的磁分析器,以通过质量狭缝投影到基底上。 提供多极镜头以控制光束的均匀性和准直。 公开了一种二路光束线,其中第二路径包括并入能量过滤的减速或加速系统。 最后,公开了离子注入的方法,其中注入模式可以从目标的一维扫描切换到二维扫描。

    Technique for improving uniformity of a ribbon beam
    65.
    发明授权
    Technique for improving uniformity of a ribbon beam 有权
    提高色带束均匀性的技术

    公开(公告)号:US07525103B2

    公开(公告)日:2009-04-28

    申请号:US11537011

    申请日:2006-09-29

    Abstract: A technique for improving uniformity of a ribbon beam is disclosed. In one particular exemplary embodiment, an apparatus may comprise a first corrector-bar assembly and a second corrector-bar assembly, wherein the second corrector-bar assembly is located at a predetermined distance from the first corrector-bar assembly. Each of a first plurality of coils in the first corrector-bar assembly may be individually excited to deflect at least one beamlet in the ribbon beam, thereby causing the beamlets to arrive at the second corrector-bar assembly in a desired spatial spread. Each of a second plurality of coils in the second corrector-bar assembly may be individually excited to further deflect one or more beamlets in the ribbon beam, thereby causing the beamlets to exit the second corrector-bar assembly at desired angles.

    Abstract translation: 公开了一种用于提高带状束的均匀性的技术。 在一个特定示例性实施例中,装置可以包括第一校正杆组件和第二校正杆组件,其中第二校正杆组件位于距离第一校正杆组件预定距离处。 第一校正棒组件中的第一组多个线圈中的每一个可以被单独地激发以偏转带束束中的至少一个子束,从而使子束以期望的空间扩展到达第二校正器组件。 可以单独地激励第二校正棒组件中的第二组多个线圈中的每一个以进一步偏转带状束中的一个或多个子束,从而使子束以期望的角度离开第二校正棒组件。

    Charged Particle Beam Irradiation System
    66.
    发明申请
    Charged Particle Beam Irradiation System 有权
    带电粒子束照射系统

    公开(公告)号:US20090032723A1

    公开(公告)日:2009-02-05

    申请号:US12182709

    申请日:2008-07-30

    Abstract: It is to prevent an image drift from occurring caused by a specimen being charged when observing the specimen including an insulating material.A first scan is performed in a predetermined direction on scanning line and in a predetermined sequential direction of scanning lines and a second scan is performed in a scanning direction different from the predetermined scanning direction and in a sequential direction different from the predetermined sequential direction. An image may be created by repeating the process of executing the second scan after executing the first scan and by requiring the arithmetic average of the frames obtained by the second scans. An image may be created by averaging arithmetically at least one frame obtained by the first scan and at least one frame obtained by the second scan.

    Abstract translation: 这是为了防止在观察包括绝缘材料的试样时由试样充电引起的图像漂移。 在扫描线和扫描线的预定顺序方向上沿预定方向执行第一扫描,并且在与预定扫描方向不同的扫描方向上和沿与预定顺序方向不同的顺序方向上执行第二扫描。 可以通过在执行第一次扫描之后重​​复执行第二扫描的处理并且要求通过第二扫描获得的帧的算术平均来创建图像。 可以通过对由第一扫描获得的至少一帧和通过第二扫描获得的至少一帧进行算术平均来创建图像。

    Charged Particle System
    67.
    发明申请
    Charged Particle System 有权
    带电粒子系统

    公开(公告)号:US20080210887A1

    公开(公告)日:2008-09-04

    申请号:US12090636

    申请日:2006-10-20

    Abstract: A charged particle system comprises a particle source for generating a beam of charged particles and a particle-optical projection system. The particle-optical projection system comprises a focusing first magnetic lens (403) comprising an outer pole piece (411) having a radial inner end (411′), and an inner pole piece (412) having a lowermost end (412′) disposed closest to the radial inner end of the outer pole piece, a gap being formed by those; a focusing electrostatic lens (450) having at least a first electrode (451) and a second electrode (450) disposed in a region of the gap; and a controller (C) configured to control a focusing power of the first electrostatic lens based on a signal indicative of a distance of a surface of a substrate from a portion of the first magnetic lens disposed closest to the substrate.

    Abstract translation: 带电粒子系统包括用于产生带电粒子束的粒子源和粒子光学投影系统。 粒子光学投影系统包括聚焦第一磁性透镜(403),其包括具有径向内端(411')的外极片(411)和设置有最下端(412')的内极片(412) 最靠近外极片的径向内端的间隙由它们形成; 具有至少设置在所述间隙的区域中的第一电极(451)和第二电极(450)的聚焦静电透镜(450) 以及控制器(C),被配置为基于表示基板的表面距离最靠近基板设置的第一磁性透镜的部分的距离的信号来控制第一静电透镜的聚焦能力。

    Electron microscope and electron beam inspection system
    68.
    发明授权
    Electron microscope and electron beam inspection system 有权
    电子显微镜和电子束检查系统

    公开(公告)号:US07394066B2

    公开(公告)日:2008-07-01

    申请号:US11180671

    申请日:2005-07-14

    Abstract: An electron microscope includes an illuminating lens system that illuminates an electron beam that is emitted from an electron source onto a specimen as a planar illuminating electron beam having a two-dimensional spread, an imaging lens system that projects and magnifies the reflecting electron beam emitted from the specimen to project and form a specimen image, a beam separator that separates the illuminating electron beam from the reflecting electron beam, and a controller. The controller controls the reflecting electron beam so as to go straight through the beam separator, and the illuminating electron beam so as to keep a deflection angle of the illuminating electron beam which is made by the beam separator substantially constant.

    Abstract translation: 电子显微镜包括照明透镜系统,其将从电子源发射的电子束照射到样本上作为具有二维扩展的平面照明电子束;成像透镜系统,其投影并放大从 投影并形成标本图像的样本,将照射电子束与反射电子束分离的光束分离器和控制器。 控制器控制反射电子束以直线通过光束分离器,并且照明电子束以保持由光束分离器制成的照明电子束的偏转角大致恒定。

    Charged-Particle Beam System
    69.
    发明申请
    Charged-Particle Beam System 有权
    带电粒子束系统

    公开(公告)号:US20080142723A1

    公开(公告)日:2008-06-19

    申请号:US11959966

    申请日:2007-12-19

    Applicant: Kazuya Goto

    Inventor: Kazuya Goto

    Abstract: A charged-particle beam system has a demagnifying lens for reducing the dimensions of an electron beam produced from an electron beam source, an objective lens for focusing the demagnified beam onto the surface of a target, a first deflector located before the demagnifying lens, a second deflector placed such that the deflection field produced by it is totally or partially superimposed on the objective lens field, and a third deflector located in a stage following the second deflector. An image of the light source is created by the demagnifying lens. An image of the light source image is formed on the target by the objective lens.

    Abstract translation: 带电粒子束系统具有用于减小从电子束源产生的电子束的尺寸的缩小透镜,用于将缩小的光束聚焦到目标表面上的物镜,位于缩小透镜之前的第一偏转器, 第二偏转器被放置成使得其产生的偏转场全部或部分地叠加在物镜视场上,而第三偏转器位于跟随第二偏转器的阶段中。 光源的图像由缩小透镜产生。 通过物镜在目标上形成光源图像的图像。

    Controlling the characteristics of implanter ion-beams
    70.
    发明授权
    Controlling the characteristics of implanter ion-beams 有权
    控制注入离子束的特性

    公开(公告)号:US07351984B2

    公开(公告)日:2008-04-01

    申请号:US11784073

    申请日:2007-04-05

    Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.

    Abstract translation: 一种满足日益增长的要求的方法和装置,用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。 该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。 光学元件的设计成为可能:(1)宽幅调节工件上的带状光束的宽度; (2)纠正带状横梁宽度的强度分布不准确; (3)关于X轴和Y轴的独立转向; (4)工件入射角校正; 和(5)空间费用引起的光束膨胀效应的近似补偿。 在实际情况下,这些元件的组合允许源和工件之间的带状光束膨胀到350毫米,具有良好的均匀性和角度精度。 此外,该方法和装置可用于沿着光束线引入四极场。

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