公开(公告)号：US20180138015A1

公开(公告)日：2018-05-17

申请号：US15349139

申请日：2016-11-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Sathyendra K. Ghantasala ,  Vijayakumar C. Venugopal ,  Hyun-Ho Doh

IPC: H01J37/32 ,  G01R27/04

CPC classification number: H01J37/32082 ,  G01R27/04 ,  H01J37/32935 ,  H01J2237/334

Abstract: A method of assigning faults to a processing chamber is described. Some embodiments include applying a radio frequency (RF) signal to a processing chamber to stimulate resonance in the chamber, measuring resonances of the applied RF signal in the chamber, extracting a fingerprint from the measured resonances, comparing the extracted fingerprint to a library of fingerprints, assigning a similarity index to combinations of the extracted fingerprint with at least one fingerprint in the fingerprint library, comparing each similarity index to a threshold, and if the similarity is greater than a threshold, then assigning a fault to the processing chamber using the library fingerprint.

公开(公告)号：US20180133680A1

公开(公告)日：2018-05-17

申请号：US15585565

申请日：2017-05-03

Applicant: KOREA BASIC SCIENCE INSTITUTE

Inventor： Hyun-Uk Lee ,  Jouhahn Lee ,  So Young Park

IPC: B01J19/08 ,  H01J37/32 ,  C09K11/06

CPC classification number: B01J19/081 ,  B01J19/088 ,  B01J2219/0877 ,  B01J2219/0879 ,  B01J2219/0894 ,  B82Y20/00 ,  B82Y40/00 ,  C01B32/18 ,  C09K11/06 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/3244 ,  H01J2237/32 ,  Y10S977/774 ,  Y10S977/901 ,  Y10S977/95

Abstract: Photoluminescent carbon nanoparticles and a method of preparing the same are described herein. A method of preparing photoluminescent carbon nanoparticles includes obtaining carbon nanodots, and treating the carbon nanodots with plasma.

公开(公告)号：US20180130690A1

公开(公告)日：2018-05-10

申请号：US15690203

申请日：2017-08-29

Applicant: Lam Research Corporation

Inventor： Neil Martin Paul Benjamin ,  Henry Povolny ,  Anthony J. Ricci

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  H01L21/66

CPC classification number: H01L21/6833 ,  H01J37/32082 ,  H01J2237/334 ,  H01L21/67253 ,  H01L22/26

Abstract: A ceramic assembly is attached to a lower support structure having a bowl shape. The ceramic assembly has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic assembly. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic assembly at a location vertically below the at least one clamp electrode such that a region of the ceramic assembly between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic assembly. Each of the RF power delivery connection modules is configured to form an electrical connection from the lower support structure to the primary RF power delivery electrode at its respective location.

公开(公告)号：US20180102245A1

公开(公告)日：2018-04-12

申请号：US15817579

申请日：2017-11-20

Applicant: LAM RESEARCH CORPORATION

Inventor： James S. Sims ,  Jon Henri ,  Ramesh Chandrasekharan ,  Andrew John McKerrow ,  Seshasayee Varadarajan ,  Kathryn Merced Kelchner

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/02 ,  C23C16/50 ,  C23C16/455 ,  C23C16/34

CPC classification number: H01L21/0228 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/32467 ,  H01J37/32513 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32715 ,  H01J37/32862 ,  H01J2237/3321 ,  H01J2237/335 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274

Abstract: A method of depositing ALD films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma such that aluminum-rich byproducts are formed on the ceramic surfaces, (b) depositing a conformal halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces so as to cover the aluminum-rich byproducts, (c) depositing a pre-coating on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film on the semiconductor substrate supported on the ceramic surface of the pedestal.

公开(公告)号：US20180076045A1

公开(公告)日：2018-03-15

申请号：US15817729

申请日：2017-11-20

Applicant: Lam Research Corporation

Inventor： Zhongkui Tan ,  Qian Fu ,  Ying Wu ,  Qing Xu ,  John Drewery

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/308 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/30655 ,  H01L21/308 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/67069 ,  Y02P80/30

Abstract: A substrate is disposed on a substrate holder within a process module. The substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material. A plasma is generated in exposure to the substrate. For a first duration, a bias voltage is applied at the substrate holder at a first bias voltage setting corresponding to a high bias voltage level. For a second duration, after completion of the first duration, a bias voltage is applied at the substrate holder at a second bias voltage setting corresponding to a low bias voltage level. The second bias voltage setting is greater than 0 V. The first and second durations are repeated in an alternating and successive manner for an overall period of time necessary to remove a required amount of the target material exposed on the substrate.

公开(公告)号：US20180068862A1

公开(公告)日：2018-03-08

申请号：US15558045

申请日：2017-01-31

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Satoshi TERAKURA ,  Masahito MORI ,  Takao ARASE ,  Taku IWASE

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/027 ,  H05H1/46

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/0212 ,  H01L21/02129 ,  H01L21/0214 ,  H01L21/0276 ,  H01L21/31122 ,  H01L21/31144 ,  H05H1/46 ,  H05H2001/469

Abstract: The present invention provides a plasma processing method and a plasma processing apparatus. The plasma processing method enables consistent processing by realizing a high selectivity and a high etching rate when etching a laminated film using a boron-containing amorphous carbon film, realizes high throughput including prior and post processes by simplifying a mask forming process, and has shape controllability of vertical processing. In the present invention, in a plasma processing method for forming a mask by plasma-etching a laminated film including an amorphous carbon film containing boron, the boron-containing amorphous carbon film is plasma-etched by using a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas, or a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrachloride gas.

公开(公告)号：US09909214B2

公开(公告)日：2018-03-06

申请号：US14884695

申请日：2015-10-15

Applicant: ASM IP Holding B.V.

Inventor： Hidemi Suemori

IPC: B44C1/22 ,  C23F3/00 ,  C03C15/00 ,  C03C25/68 ,  H05H1/24 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

CPC classification number: C23C16/50 ,  C23C16/045 ,  C23C16/405 ,  C23C16/45542 ,  C23C16/45561 ,  C23C16/52 ,  H01J37/32009 ,  H01J37/32082 ,  H01J2237/3321 ,  H01J2237/334

Abstract: A method for depositing a dielectric film in a trench by plasma-enhanced atomic layer deposition (PEALD) includes depositing a dielectric film in a trench of a substrate by PEALD under conditions wherein the wet etch rate of the depositing film on a top surface of the substrate is substantially equivalent to or higher than the wet etch rate of the depositing film at a sidewall of the trench, wherein a precursor fed into the reaction space has —N(CH3)2 as a functional group.

公开(公告)号：US20180053631A1

公开(公告)日：2018-02-22

申请号：US15783983

申请日：2017-10-13

Applicant: Applied Materials, Inc.

Inventor： Leonid Dorf ,  Kenneth S. Collins ,  Shahid Rauf ,  Kartik Ramaswamy ,  James D. Carducci ,  Hamid Tavassoli ,  Olga Regelman ,  Ying Zhang

IPC: H01J37/32 ,  H01J37/06 ,  H01L21/3065

CPC classification number: H01J37/32174 ,  H01J37/06 ,  H01J37/32082 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32532 ,  H01J2237/3151 ,  H01J2237/3174 ,  H01J2237/334 ,  H01J2237/3348 ,  H01L21/3065 ,  H01L21/31116

Abstract: The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.

公开(公告)号：US20180041183A1

公开(公告)日：2018-02-08

申请号：US15787374

申请日：2017-10-18

Applicant: Reno Technologies, Inc.

Inventor： Anton Mavretic ,  Ian M. Costanzo ,  Ronald Anthony Decker

IPC: H03H7/40 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H03K17/687 ,  H03H7/38 ,  H02M3/335 ,  H01L29/861 ,  H01L29/778 ,  G01R19/165 ,  H01L49/02 ,  H01L27/06 ,  H01L21/3213 ,  H01L29/20 ,  H03K17/10 ,  H03K17/691 ,  H03K17/795 ,  H04B1/44

CPC classification number: H03H7/40 ,  G01R19/165 ,  H01J37/32082 ,  H01J37/32183 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L27/0605 ,  H01L28/20 ,  H01L28/40 ,  H01L29/2003 ,  H01L29/7787 ,  H01L29/861 ,  H02M1/08 ,  H02M3/33569 ,  H03H7/38 ,  H03K17/102 ,  H03K17/687 ,  H03K17/691 ,  H03K17/7955 ,  H03K2017/6875 ,  H04B1/44

Abstract: In one embodiment, an impedance matching network is disclosed that includes a first circuit comprising a first variable component providing a first variable capacitance or inductance, and a second circuit comprising a second variable component providing a second variable capacitance or inductance. Each of the first circuit and the second circuit includes plurality of switching circuits configured to provide the first variable capacitance or inductance and the second variable capacitance or inductance. Each of the plurality of switching circuits includes a diode and a driver circuit configured to switch the diode. The driver circuit includes a first switch, a second switch coupled in series with the first switch, and a filter circuit that is coupled at a first end between the first switch and the second switch, and is operably coupled at a second end to the diode.

公开(公告)号：US20180033672A1

公开(公告)日：2018-02-01

申请号：US15220926

申请日：2016-07-27

Applicant: Lam Research Corporation

Inventor： Peter Woytowitz ,  Vincent Burkhart ,  Michael Rumer ,  Karl Leeser

IPC: H01L21/687 ,  C23C16/458 ,  C23C16/505 ,  H01L21/683 ,  H01J37/32

CPC classification number: H01L21/68735 ,  C23C16/458 ,  C23C16/4581 ,  C23C16/4583 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32715 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/6833 ,  H01L21/6875

Abstract: A substrate support for a substrate processing system is provided and includes a body and mesas. The mesas are distributed across and extending from and in a direction away from the body. The mesas are configured to support a substrate. Each of the mesas includes a surface area that contacts and supports the substrate. Areal density of the mesas monotonically increases as a radial distance from a center of the substrate support increases.