公开(公告)号：US09704690B2

公开(公告)日：2017-07-11

申请号：US14799588

申请日：2015-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moojin Kim ,  Bongseong Kim ,  Unjoo Lee

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32706 ,  H01J37/32972

Abstract: A plasma apparatus includes a chuck disposed in a process chamber, a gas supply unit supplying a process gas into the process chamber, a plasma generating unit configured to generate plasma over the chuck, a direct current (DC) power generator applying a DC pulse signal to the chuck, and a sensor monitoring a state of the plasma and providing a sensing signal to the DC power generator. Each period of the DC pulse signal includes a negative pulse duration, a positive pulse duration, and a pulse-off duration. If a signal disturbance of the sensing signal occurs in an nth period of the DC pulse signal, the DC power generator changes a magnitude of a positive pulse and/or a length of the positive pulse duration of an n+1th period of the DC pulse signal, where “n” denotes a natural number.

公开(公告)号：US20170190582A1

公开(公告)日：2017-07-06

申请号：US15396740

申请日：2017-01-02

Applicant: Wenjie Fu ,  Wei Zheng

Inventor： Wenjie Fu ,  Wei Zheng

IPC: C01B31/02 ,  C23C16/511 ,  C23C16/26

CPC classification number: C23C14/0605 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B32/20 ,  C23C14/32 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/3414 ,  H01J37/3426 ,  Y10S977/734 ,  Y10S977/843

Abstract: This invention is particularly addressing a novel method to grow two dimensional carbon nanomaterials. Using our technologies, only solid state carbon sources are used as feedstock to grow this kind of carbon nanomaterials, while no hydrocarbon gases or other carbon contained gases are required as feedstock. This invention can also be applied to grow non-carbon-based two dimensional nanomaterials, with obvious advantages of reducing manufacturing cost and enhancing growth rate.

公开(公告)号：US20170182514A1

公开(公告)日：2017-06-29

申请号：US15382901

申请日：2016-12-19

Applicant: Tokyo Electron Limited

Inventor： Takeshi KUMAGAI ,  Yutaka TAKAHASHI ,  Chihhsiang HSIAO ,  Atsushi ENDO

IPC: B05D1/00

CPC classification number: C23C16/04 ,  C23C16/18 ,  C23C16/405 ,  C23C16/4554 ,  C23C16/45551 ,  C23C16/4584 ,  H01J37/321 ,  H01J37/32366 ,  H01J37/32431 ,  H01J37/3244 ,  H01J37/32651 ,  H01J37/32715 ,  H01J37/32779 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/0334

Abstract: A method for forming a protective film is provided. In the method, a source gas containing an organic metal gas or an organic semi-metal gas is supplied to a substrate having a plurality of recessed shapes formed in a surface so as to cause the source gas to adsorb on the surface of the substrate including the plurality of recessed shapes. Then, an oxidation gas is supplied to the surface of the substrate including the plurality of recessed shapes to oxidize the source gas adsorbed on the surface of the substrate, thereby depositing an oxidation film of the organic metal or the organic semi-metal on a flat area between the plurality of recessed shapes. Supplying the source gas to the substrate and supplying the oxidation gas to the substrate are repeated at a rate in a range of 90 to 300 cycles per minute.

公开(公告)号：US20170178917A1

公开(公告)日：2017-06-22

申请号：US15447005

申请日：2017-03-01

Applicant: Lam Research Corporation

Inventor： Tom Kamp ,  Neema Rastgar ,  Michael Carl Drymon

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308 ,  H01L21/311 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/67069

Abstract: Methods of and apparatuses for laterally etching semiconductor substrates using an atomic layer etch process involving exposing an oxidized surface of a semiconductor substrate to a fluorine-containing etch gas and heating the substrate to remove non-volatile etch byproducts by a sublimation mechanism are provided herein. Methods also including additionally pulsing a hydrogen-containing gas when pulsing the fluorine-containing etch gas. Apparatuses also include an ammonia mixing manifold suitable for separately preparing and mixing ammonia for use in various tools.

公开(公告)号：US20170175253A1

公开(公告)日：2017-06-22

申请号：US15261119

申请日：2016-09-09

Applicant: IonQuest LLC

Inventor： Roman Chistyakov ,  Bassam Hanna Abraham

IPC: C23C14/35 ,  H01J37/34 ,  C23C14/14 ,  C23C14/06 ,  C23C14/00 ,  C23C14/34

CPC classification number: C23C14/354 ,  C23C14/0057 ,  C23C14/0605 ,  C23C14/14 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/35 ,  H01J37/321 ,  H01J37/32825 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3464 ,  H01J37/3467 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76879 ,  H01L21/76882 ,  H01L23/5226 ,  H01L23/53238

Abstract: A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD). Gas flows through the gap between hollow cathode and anode. The cathode target is inductively grounded, and the substrate is periodically inductively grounded.

公开(公告)号：US09679751B2

公开(公告)日：2017-06-13

申请号：US13421188

申请日：2012-03-15

Applicant: Jon McChesney ,  Theo Panagopoulos ,  Alex Paterson ,  Craig Blair

Inventor： Jon McChesney ,  Theo Panagopoulos ,  Alex Paterson ,  Craig Blair

IPC: C23C16/44 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32477 ,  C23C16/4404 ,  H01J37/321 ,  H01J37/32458 ,  H01L21/30655

Abstract: A chamber filler kit for an inductively coupled plasma processing chamber in which semiconductor substrates are processed by inductively coupling RF energy through a window facing a substrate supported on a cantilever chuck. The kit includes at least one chamber filler which reduces the lower chamber volume in the chamber below the chuck. The fillers of the kit can be mounted in a standard chamber having a chamber volume of over 60 liters and by using different sized chamber fillers it is possible to reduce the chamber volume to provide desired gas flow conductance and accommodate changes in vacuum pressure during processing of the substrate. The chamber filler kit can be used to modify a standard chamber to accommodate different processing regimes such as rapid alternating processes wherein wide pressure changes are needed without varying a gap between the substrate and the window.

公开(公告)号：US09673069B2

公开(公告)日：2017-06-06

申请号：US13945756

申请日：2013-07-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Yuri Trachuk ,  Robert Chebi ,  Carl Almgren

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/67 ,  H05H1/46 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/321 ,  H01J37/32174 ,  H01L21/3065 ,  H05H1/46 ,  H05H2001/4682

Abstract: A plasma-assisted etch process for the manufacture of semiconductor or MEMS devices employs an RF source to generate a plasma that is terminated through an electrode. The termination is designed as a “short” at the frequency of the RF source to minimize voltage fluctuations on the electrode due to the RF source energy. The electrode voltage potential can then be accurately controlled with a bias source, resulting in improved control of etch depth of a semiconductor substrate disposed on the electrode.

公开(公告)号：US20170136253A1

公开(公告)日：2017-05-18

申请号：US15419427

申请日：2017-01-30

Applicant: Plasmology4, Inc.

Inventor： Gregory A. Watson ,  Marc C. Jacofsky

IPC: A61N1/44 ,  A61L2/14 ,  A61L2/00 ,  H05H1/24

CPC classification number: H05H1/46 ,  A61L2/00 ,  A61L2/0011 ,  A61L2/0094 ,  A61L2/14 ,  A61L2202/11 ,  A61M15/02 ,  A61M16/06 ,  A61M16/12 ,  A61M2202/0208 ,  A61M2202/025 ,  A61N1/40 ,  A61N1/44 ,  H01J37/321 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/3266 ,  H05H1/2406 ,  H05H2001/2412 ,  H05H2001/466 ,  H05H2001/4682 ,  H05H2240/20 ,  H05H2245/1225 ,  H05H2277/10

Abstract: A cold plasma treatment device for delivery of a cold plasma to patient treatment area. Gas is fed to a gas compartment where it is energized by an electrode coupled to a pulse source to thereby generate a cold plasma. A dielectric barrier is sandwiched between the gas compartment and the electrode to form a dielectric barrier discharge device. The cold plasma exits the gas compartment via a bottom member having a plurality of holes. Gases that can be used include noble gases such as helium or combinations of noble gases.

公开(公告)号：US20170133202A1

公开(公告)日：2017-05-11

申请号：US14936437

申请日：2015-11-09

Applicant: Lam Research Corporation

Inventor： Ivan L. Berry, III

IPC: H01J37/32 ,  C23C16/455 ,  H01L21/3065 ,  C23C16/511 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01J37/3222 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/511 ,  H01J37/321 ,  H01J37/32238 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32899 ,  H01J37/32926 ,  H01L21/0228 ,  H01L21/67069

Abstract: Disclosed herein are methods of modifying a reaction rate on a semiconductor substrate in a processing chamber which utilize a phased-array of microwave antennas. The methods may include energizing a plasma in a processing chamber, emitting a beam of microwave radiation from a phased-array of microwave antennas, and directing the beam into the plasma so as to cause a change in a reaction rate on the surface of a semiconductor substrate inside the processing chamber. Also disclosed herein are particular embodiments of phased-arrays of microwave antennas, as well as semiconductor processing apparatuses which include a phased-array of microwave antennas configured to emit a beam of microwave radiation into a processing chamber.

公开(公告)号：US20170125262A1

公开(公告)日：2017-05-04

申请号：US15340508

申请日：2016-11-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki NAGAI

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31144 ,  C23C16/04 ,  C23C16/40 ,  C23C16/45525 ,  C23C16/56 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01L21/02142 ,  H01L21/02175 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3105

Abstract: A method includes: forming a metal oxide film on a substrate including an etching target film and a metal pattern formed thereon, and forming an oxide film having a relatively strong oxygen bond on the metal pattern; performing a reduction treatment such that the metal oxide film formed on the metal pattern is defined as a first metal-containing film and the metal oxide film formed on the etching target film is defined as a second metal-containing film whose surface is reduced into metal; selectively forming a metal film on only the second metal-containing film formed on the etching target film, the metal film having such a property that it is easy to be formed on metal and is hard to be formed on an oxide; and obtaining an inversion pattern composed of the inversion material by etching away the metal pattern and leaving the inversion material and the metal film.