Ion sources for ion implantation apparatus
    61.
    发明授权
    Ion sources for ion implantation apparatus 有权
    离子注入装置的离子源

    公开(公告)号:US06847043B2

    公开(公告)日:2005-01-25

    申请号:US10334136

    申请日:2002-12-31

    CPC classification number: H01J27/08 H01J37/08

    Abstract: The invention relates to improving the efficiency of ion flow from an ion source, by reducing heat loss from the source both in the ion chamber of the ion source and its constituent parts (e.g. the electron source). This is achieved by lining the interior of the ion chamber and/or the exterior with heat reflective and/or heat insulating material and by formation of an indirectly heated cathode tube such that heat transfer along the tube and away from the ion chamber is restricted by the formation of slits in the tube. Efficiency of the ion source is further enhanced by impregnating and/or coating the front plate of the ion chamber with a material which comprises an element or compound thereof, the ions of which element are the same specie as those to be implanted into the substrate from the source thereof.

    Abstract translation: 本发明涉及通过在离子源的离子室和其组成部分(例如电子源)中减少来自源的热损失来提高离子源的离子流的效率。 这是通过用热反射和/或绝热材料衬里离子室和/或外部的内部并通过形成间接加热的阴极管来实现的,使得沿着管并离开离子室的热传递被 在管中形成狭缝。 通过用包含元素或其化合物的材料浸渍和/或涂覆离子室的前板来进一步提高离子源的效率,其中元素的离子与将被植入到基底中的元素的离子相同 其来源。

    Cold-cathode ion source with propagation of ions in the electron drift
plane
    62.
    发明授权
    Cold-cathode ion source with propagation of ions in the electron drift plane 失效
    在电子漂移平面中具有离子传播的冷阴极离子源

    公开(公告)号:US6130507A

    公开(公告)日:2000-10-10

    申请号:US161581

    申请日:1998-09-28

    CPC classification number: H01J27/143

    Abstract: The ion source of the invention emits ion beams radially inwardly or radially outwardly from the entire periphery of the closed-loop ion-emitting slit. In one embodiment, a tubular or oval-shaped hollow body, which also functions as a cathode, contains a similarly-shaped concentric anode spaced from the inner walls of the cathode at a distance required to form an ion-generating and accelerating space. The cathode has a continuous ion-emitting slit which is aligned with the position of the anode and is concentric thereto. A magnetic-field generation means is located inside the ring-shaped anode. When the ion source is energized by inducing an magnetic field, connecting the anode to a positive pole of the electric power supply unit, the cathode to a negative pole of the power supply unit, and supplying a working medium into the hollow housing, the electrons begin to drift in the annular space between the anode and cathode in the same direction in which the ions are emitted from the annular slit. By rearranging positions of magnet, anode, and cathode, it is possible to provide emission of ions in the inward or outward direction for treating outer or inner surfaces of tubular objects.

    Abstract translation: 本发明的离子源从闭环离子发射狭缝的整个周边径向向内或径向向外发射离子束。 在一个实施例中,也用作阴极的管状或椭圆形中空体包含与形成离子产生和加速空间所需的距离处于阴极内壁间隔开的类似形状的同心阳极。 阴极具有连续的离子发射狭缝,其与阳极的位置对准并与其同心。 磁场产生装置位于环形阳极内部。 当通过诱发磁场激励离子源时,将阳极连接到电源单元的正极,将阴极连接到电源单元的负极,并将工作介质供应到中空壳体中,电子 开始在阳极和阴极之间的环形空间中沿着从环形狭缝发射离子的相同方向漂移。 通过重新排列磁体,阳极和阴极的位置,可以在向内或向外的方向上提供离子的发射,用于处理管状物体的外表面或内表面。

    Ion source for an ion beam arrangement
    63.
    发明授权
    Ion source for an ion beam arrangement 失效
    用于离子束布置的离子源

    公开(公告)号:US6087615A

    公开(公告)日:2000-07-11

    申请号:US117297

    申请日:1998-10-30

    Abstract: An ion source for large-area implantation of ions into a specimen comprises an anode, a cathode produced from the same material as that of the specimen towards which ions are emitted from the ion source, or coated with this material, or produced from a material which does not represent a contamination for the specimen, and a closed plasma chamber arranged between the anode and the cathode, the cathode comprises a multi-slot structure with juxtaposed slots which are separated by bars or plates, the ions passing through the multi-slot structure whereby a multi-band beam is produced, and a voltage for generating an electric field at right angles to the ion beam being applicable to the cathode or to subsequent multi-slot structures for extracting and accelerating the multi-band beam, the voltage being applied in such a way that the bars have different polarities.

    Abstract translation: PCT No.PCT / EP97 / 00319 Sec。 371日期:1998年10月30日 102(e)日期1998年10月30日PCT 1997年1月23日PCT PCT。 公开号WO97 / 27613 日期1997年7月31日用于大面积离子注入试样的离子源包括阳极,由与离子源从离子源发射的样品相同的材料产生的阴极或用该材料涂覆的阴极, 或由不表示样品污染的材料制成,以及布置在阳极和阴极之间的封闭等离子体室,阴极包括具有并列的狭槽的多槽结构,其间隔有条或板,离子通过 通过多槽结构,由此产生多波束束,并且产生与离子束成直角的电场的电压可应用于阴极或随后的多时隙结构用于提取和加速多频带 光束,以这样的方式施加电压,使得条具有不同的极性。

    Method of manufacturing semiconductor devices and apparatus therefor
    64.
    发明授权
    Method of manufacturing semiconductor devices and apparatus therefor 失效
    制造半导体器件的方法及其装置

    公开(公告)号:US6084241A

    公开(公告)日:2000-07-04

    申请号:US87699

    申请日:1998-06-01

    Inventor: Joseph W. Sitter

    CPC classification number: H01J27/08 H01J2237/081 H01J2237/31701

    Abstract: A method of manufacturing a semiconductor device includes creating ions in a chamber (201), using the ions to generate sputtered material from a target (241, 242) in the chamber (201), creating other ions from the sputtered material in the chamber (201), extracting the other ions out of the chamber (201), and implanting the other ions into the wafer (111).

    Abstract translation: 制造半导体器件的方法包括在室(201)中产生离子,使用离子从腔室(201)中的靶(241,242)产生溅射材料,从室中的溅射材料产生其它离子( 201),将其它离子从室(201)中取出,并将其它离子注入到晶片(111)中。

    Cold-cathode ion source with a controlled position of ion beam
    65.
    发明授权
    Cold-cathode ion source with a controlled position of ion beam 失效
    具有受控离子束位置的冷阴极离子源

    公开(公告)号:US6037717A

    公开(公告)日:2000-03-14

    申请号:US225159

    申请日:1999-01-04

    CPC classification number: H01J27/143 H01J2237/08

    Abstract: A cold-cathode ion source with a closed-loop ion-emitting slit which is provided with means for generating a cyclically-variable, e.g., alternating or pulsating electric or magnetic field in an anode-cathode space. These means may be made in the form of an alternating-voltage generator which generates alternating voltage on one of the cathode parts that form the ion-emitting slit, whereas the other slit-forming part is grounded. The alternating voltage deviates the ion beam in the slit with the same frequency of the alternating voltage. In accordance with another embodiment, the aforementioned means may be an electromagnetic coil which generates a magnetic field which passes through the ion-emitting slit, thus acting on the condition of the spatial-charge formation and, hence, on concentration of ions in the ion beam. The cold-cathode ion source may be of any type, i.e., with the ion beam emitted in the direction perpendicular to the direction of drift of electrons in the ion-emitting slit or with the direction of emission of the beam which coincides with the direction of electron drift.

    Abstract translation: 具有闭环离子发射狭缝的冷阴极离子源,其设置有用于在阳极 - 阴极空间中产生可循环变化的例如交变或脉动电场或磁场的装置。 这些装置可以以交流电压发生器的形式制成,其在形成离子发射狭缝的阴极部分之一上产生交流电压,而另一个狭缝形成部分接地。 交变电压以相同的交流电压频率使狭缝中的离子束偏离。 根据另一实施例,上述装置可以是产生穿过离子发射狭缝的磁场的电磁线圈,因此作用于空间电荷形成的条件,并因此作用于离子的离子浓度 光束。 冷阴极离子源可以是任何类型的,即离子束沿垂直于离子发射狭缝中的电子漂移方向的方向发射,或者与辐射方向一致的方向发射 的电子漂移。

    Arc chamber for ion implanter
    66.
    发明授权
    Arc chamber for ion implanter 失效
    离子注入机电弧室

    公开(公告)号:US5892232A

    公开(公告)日:1999-04-06

    申请号:US735981

    申请日:1996-10-25

    CPC classification number: H01J27/08

    Abstract: An arc chamber including a reaction chamber, a filament element used to generate electrons, a first power supply means set for providing power to the filament element, a second power supply means utilized for creating a potential to increase the ionization efficiency, a plurality of gas injected openings set to inject suitable gas into the reaction chamber and be ionized in a gaseous plasma by impact from electrons, a first filament insulator, and three second filament insulators used for isolation. The first filament insulator includes a truncated corn portion and a ring portion. The truncated corn portion has a hole formed threrethrough itself. The ring portion is coaxially connected to the smaller surface of the truncated corn portion. The second filament insulator includes a truncated corn portion and two ring portions. Similarily, the truncated corn portion has a hole through formed therethrough. The ring portions are respectively coaxially connected to the two surfaces of the truncated corn portion. In the preferred embodiment, three first filament insulators and one second filament insulator are set on the filament element for isolation. The filament insulators are screwed into the filament element and exactly attached on the side wall of the reaction chamber.

    Abstract translation: 包括反应室,用于产生电子的灯丝元件的电弧室,用于向灯丝元件供电的第一电源装置,用于产生提高电离效率的电位的第二电源装置,多个气体 注入的开口设置成将合适的气体注入反应室,并通过来自电子的冲击,第一细丝绝缘体和用于隔离的三个第二长丝绝缘体在气态等离子体中离子化。 第一长丝绝缘体包括截顶玉米部分和环部分。 截断的玉米部分具有自身形成的孔。 环部分同轴连接到截顶玉米部分的较小表面。 第二长丝绝缘体包括截顶玉米部分和两个环部分。 类似地,截头玉米部分具有通过其形成的孔。 环部分别同轴地连接到截顶玉米部分的两个表面。 在优选实施例中,将三个第一灯丝绝缘体和一个第二灯丝绝缘体设置在灯丝元件上用于隔离。 灯丝绝缘子拧入灯丝元件并精确地附着在反应室的侧壁上。

    Ion implantation having increased source lifetime
    68.
    发明授权
    Ion implantation having increased source lifetime 失效
    离子注入具有增加的源寿命

    公开(公告)号:US5554852A

    公开(公告)日:1996-09-10

    申请号:US415978

    申请日:1995-04-03

    Abstract: Ion implantation equipment is modified so as to provide filament reflectors to a filament inside of an arc chamber, and to remove the electrical insulators for the filament outside of the arc chamber and providing a shield, thereby reducing the formation of a conductive layer on said insulators and greatly extending the lifetime and reducing downtime of the equipment. The efficiency of the equipment is further enhanced by an interchangeable liner for the arc chamber that increases the wall temperature of the arc chamber and thus the electron temperature. The use of tungsten parts inside the arc chamber, obtained either by making the arc chamber itself or portions thereof of tungsten, particularly the front plate having the exit aperture for the ion beam, or by inserting a removable tungsten liner therein, decreases contamination of the ion beam. Serviceability of the arc chamber is improved by using a unitary clamp that separately grips both the filament and filament reflectors. This clamp can also advantageously be made of tungsten.

    Abstract translation: 离子注入设备被修改以便为电弧室内的灯丝提供灯丝反射器,并且去除电弧室外的灯丝的电绝缘体并提供屏蔽,由此减少所述绝缘体上的导电层的形成 大大延长了使用寿命,减少了设备的停机时间。 通过用于电弧室的可互换的衬垫进一步提高了设备​​的效率,从而增加了电弧室的壁温,从而提高了电子温度。 通过使电弧室本身或其部分的钨,特别是具有用于离子束的出射孔的前板或通过在其中插入可移除的钨衬垫而获得的钨部件的使用减少了 离子束。 通过使用分开夹持灯丝和灯丝反射器的单一夹具来改善电弧室的可维护性。 该夹具还可以有利地由钨制成。

    Pulsed ion beam source
    69.
    发明授权
    Pulsed ion beam source 失效
    脉冲离子束源

    公开(公告)号:US5525805A

    公开(公告)日:1996-06-11

    申请号:US340519

    申请日:1994-11-16

    Inventor: John B. Greenly

    Abstract: An improved magnetically-confined anode plasma pulsed ion beam source. Beam rotation effects and power efficiency are improved by a magnetic design which places the separatrix between the fast field flux structure and the slow field structure near the anode of the ion beam source, by a gas port design which localizes the gas delivery into the gap between the fast coil and the anode, by a pre-ionizer ringing circuit connected to the fast coil, and by a bias field means which optimally adjusts the plasma formation position in the ion beam source.

    Abstract translation: 改进的磁约束阳极等离子体脉冲离子束源。 光束旋转效应和功率效率通过将气体输送定位到离子束源之间的间隙中的气体端口设计的磁性设计来改善,该磁性设计将分离矩阵放置在离子束源的阳极附近的快速场通量结构和慢场结构之间 快速线圈和阳极,通过连接到快速线圈的预电离器振铃电路以及最佳地调节离子束源中的等离子体形成位置的偏置场装置。

    Plasma spray gun head
    70.
    发明授权
    Plasma spray gun head 失效
    等离子喷枪头

    公开(公告)号:US5519183A

    公开(公告)日:1996-05-21

    申请号:US304132

    申请日:1994-09-12

    Applicant: Markus Mueller

    Inventor: Markus Mueller

    Abstract: The plasma gun head for plasma spraying apparatuses essentially comprises a cathode body mender, an anode body member and an insulating member inserted there between and electrically insulating these two members from each other. Inserted into the cathode body member is a cathode assembly, and into the anode body member an anode nozzle, both extending transverse to the longitudinal axis of the plasma gun head. The anode body member and the cathode body member both are provided with cooling channel sections which are connected in series as seen in the direction of flow of the cooling medium. The anode nozzle is rigidly integrated into the anode body member; thus, it is not necessary to provide sealing elements in this thermally highly stressed region. The sealing elements required for sealing the cooling channel sections are located remote from the anode nozzle and the cathode assembly, respectively, in a region, which is thermally not stressed.

    Abstract translation: 用于等离子喷涂装置的等离子体枪头主要包括阴极体修整器,阳极体构件和插入其中的绝缘构件,并将这两个构件彼此电绝缘。 插入到阴极体部件中的是阴极组件,并且阳极体部件中的两个横向于等离子体枪头的纵向轴线延伸的阳极喷嘴。 阳极体构件和阴极体构件均设有沿冷却介质的流动方向观察的串联连接的冷却通道部。 阳极喷嘴刚性地集成到阳极体构件中; 因此,不需要在该热应力高的区域内设置密封元件。 用于密封冷却通道部分所需的密封元件分别远离阳极喷嘴和阴极组件位于热不受应力的区域中。

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