Abstract:
The invention relates to improving the efficiency of ion flow from an ion source, by reducing heat loss from the source both in the ion chamber of the ion source and its constituent parts (e.g. the electron source). This is achieved by lining the interior of the ion chamber and/or the exterior with heat reflective and/or heat insulating material and by formation of an indirectly heated cathode tube such that heat transfer along the tube and away from the ion chamber is restricted by the formation of slits in the tube. Efficiency of the ion source is further enhanced by impregnating and/or coating the front plate of the ion chamber with a material which comprises an element or compound thereof, the ions of which element are the same specie as those to be implanted into the substrate from the source thereof.
Abstract:
The ion source of the invention emits ion beams radially inwardly or radially outwardly from the entire periphery of the closed-loop ion-emitting slit. In one embodiment, a tubular or oval-shaped hollow body, which also functions as a cathode, contains a similarly-shaped concentric anode spaced from the inner walls of the cathode at a distance required to form an ion-generating and accelerating space. The cathode has a continuous ion-emitting slit which is aligned with the position of the anode and is concentric thereto. A magnetic-field generation means is located inside the ring-shaped anode. When the ion source is energized by inducing an magnetic field, connecting the anode to a positive pole of the electric power supply unit, the cathode to a negative pole of the power supply unit, and supplying a working medium into the hollow housing, the electrons begin to drift in the annular space between the anode and cathode in the same direction in which the ions are emitted from the annular slit. By rearranging positions of magnet, anode, and cathode, it is possible to provide emission of ions in the inward or outward direction for treating outer or inner surfaces of tubular objects.
Abstract:
An ion source for large-area implantation of ions into a specimen comprises an anode, a cathode produced from the same material as that of the specimen towards which ions are emitted from the ion source, or coated with this material, or produced from a material which does not represent a contamination for the specimen, and a closed plasma chamber arranged between the anode and the cathode, the cathode comprises a multi-slot structure with juxtaposed slots which are separated by bars or plates, the ions passing through the multi-slot structure whereby a multi-band beam is produced, and a voltage for generating an electric field at right angles to the ion beam being applicable to the cathode or to subsequent multi-slot structures for extracting and accelerating the multi-band beam, the voltage being applied in such a way that the bars have different polarities.
Abstract:
A method of manufacturing a semiconductor device includes creating ions in a chamber (201), using the ions to generate sputtered material from a target (241, 242) in the chamber (201), creating other ions from the sputtered material in the chamber (201), extracting the other ions out of the chamber (201), and implanting the other ions into the wafer (111).
Abstract:
A cold-cathode ion source with a closed-loop ion-emitting slit which is provided with means for generating a cyclically-variable, e.g., alternating or pulsating electric or magnetic field in an anode-cathode space. These means may be made in the form of an alternating-voltage generator which generates alternating voltage on one of the cathode parts that form the ion-emitting slit, whereas the other slit-forming part is grounded. The alternating voltage deviates the ion beam in the slit with the same frequency of the alternating voltage. In accordance with another embodiment, the aforementioned means may be an electromagnetic coil which generates a magnetic field which passes through the ion-emitting slit, thus acting on the condition of the spatial-charge formation and, hence, on concentration of ions in the ion beam. The cold-cathode ion source may be of any type, i.e., with the ion beam emitted in the direction perpendicular to the direction of drift of electrons in the ion-emitting slit or with the direction of emission of the beam which coincides with the direction of electron drift.
Abstract:
An arc chamber including a reaction chamber, a filament element used to generate electrons, a first power supply means set for providing power to the filament element, a second power supply means utilized for creating a potential to increase the ionization efficiency, a plurality of gas injected openings set to inject suitable gas into the reaction chamber and be ionized in a gaseous plasma by impact from electrons, a first filament insulator, and three second filament insulators used for isolation. The first filament insulator includes a truncated corn portion and a ring portion. The truncated corn portion has a hole formed threrethrough itself. The ring portion is coaxially connected to the smaller surface of the truncated corn portion. The second filament insulator includes a truncated corn portion and two ring portions. Similarily, the truncated corn portion has a hole through formed therethrough. The ring portions are respectively coaxially connected to the two surfaces of the truncated corn portion. In the preferred embodiment, three first filament insulators and one second filament insulator are set on the filament element for isolation. The filament insulators are screwed into the filament element and exactly attached on the side wall of the reaction chamber.
Abstract:
An ion source is for use in an ion implanter. The ion source comprises a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber.
Abstract:
Ion implantation equipment is modified so as to provide filament reflectors to a filament inside of an arc chamber, and to remove the electrical insulators for the filament outside of the arc chamber and providing a shield, thereby reducing the formation of a conductive layer on said insulators and greatly extending the lifetime and reducing downtime of the equipment. The efficiency of the equipment is further enhanced by an interchangeable liner for the arc chamber that increases the wall temperature of the arc chamber and thus the electron temperature. The use of tungsten parts inside the arc chamber, obtained either by making the arc chamber itself or portions thereof of tungsten, particularly the front plate having the exit aperture for the ion beam, or by inserting a removable tungsten liner therein, decreases contamination of the ion beam. Serviceability of the arc chamber is improved by using a unitary clamp that separately grips both the filament and filament reflectors. This clamp can also advantageously be made of tungsten.
Abstract:
An improved magnetically-confined anode plasma pulsed ion beam source. Beam rotation effects and power efficiency are improved by a magnetic design which places the separatrix between the fast field flux structure and the slow field structure near the anode of the ion beam source, by a gas port design which localizes the gas delivery into the gap between the fast coil and the anode, by a pre-ionizer ringing circuit connected to the fast coil, and by a bias field means which optimally adjusts the plasma formation position in the ion beam source.
Abstract:
The plasma gun head for plasma spraying apparatuses essentially comprises a cathode body mender, an anode body member and an insulating member inserted there between and electrically insulating these two members from each other. Inserted into the cathode body member is a cathode assembly, and into the anode body member an anode nozzle, both extending transverse to the longitudinal axis of the plasma gun head. The anode body member and the cathode body member both are provided with cooling channel sections which are connected in series as seen in the direction of flow of the cooling medium. The anode nozzle is rigidly integrated into the anode body member; thus, it is not necessary to provide sealing elements in this thermally highly stressed region. The sealing elements required for sealing the cooling channel sections are located remote from the anode nozzle and the cathode assembly, respectively, in a region, which is thermally not stressed.