Abstract:
The present disclosure relates to a gas field ion source having a gun housing, an electrically conductive gun can base attached to the gun housing, an inner tube mounted to the gun can base, the inner tube being made of an electrically isolating ceramic, an electrically conductive tip attached to the inner tube, an outer tube mounted to the gun can base, the outer tube being made of an electrically isolating ceramic, and an extractor electrode attached to the outer tube. The extractor electrode can have an opening for the passage of ions generated in proximity to the electrically conductive tip.
Abstract:
The present invention relates to an ion implantation machine 100 that comprises: an enclosure 101 that is connected to a pump device 102; a plasma source 115-121-122; a bias power supply 113; a gas inlet 117 leading into the enclosure; and a substrate-carrier 104 connected to the negative pole of the bias power supply and arranged inside the enclosure. The machine is remarkable in that: the substrate-carrier 104 consists in at least two parallel plates 105-106; a reference electrode consists in at least one strip 110, this reference electrode being connected to the positive pole of the bias power supply; and the strip is interposed between the two plates.
Abstract:
A method for correcting a drift of an accelerating voltage includes measuring, after a position of a focus of a charged particle beam has been adjusted based on a first adjustment value and a predetermined time period has passed, a second adjustment value when the position of the focus of the charged particle beam is newly adjusted, calculating a deviation amount between the first adjustment value and the second adjustment value, calculating, using a correlation stored in a storage device, a correction value of an accelerating voltage to be applied to a beam source which emits the charged particle beam, where the correction value corresponds to the deviation amount, and correcting the accelerating voltage to be applied to the beam source, by using the correlation value.
Abstract:
The system described herein determines a distance of a component of a particle beam device from an object to the particle beam device and sets a position of the component in the particle beam device. The component is moved from a first starting position of the component relatively in the direction of an object, which is located in a second starting position, until the component makes contact with the object. When the component makes contact with the object, an adjusting path covered by the component and/or the object during the movement is determined. The adjusting path runs along a straight line that joins a first point on the component in the first starting position to a second point on the object in the second starting position that is arranged closest to the first point on the component along this line. The adjusting path corresponds to the distance.
Abstract:
The present invention provides a method and apparatus for correcting an aberration in a charged-particle-beam device. The apparatus includes a charged-particle-beam source, a charged-particle optical system that irradiates a specimen with charged particles emitted from the charged-particle-beam source, an aberration corrector that corrects an aberration of the charged-particle optical system, a control unit that controls the charged-particle optical system and the aberration corrector, a through-focus imaging unit that obtains plural Ronchigrams in which a focal position of the charged-particle optical system is changed, and an aberration calculation unit that divides the obtained Ronchigram into plural local areas, and calculates the amount of the aberration based on line focuses detected in the local areas.
Abstract:
A specimen image capture method using a charged particle microscope device includes: a first image acquisition step in which the gain of a detector in a charged particle microscope is set to a first gain value, charged particle beam scanning is carried out on a specimen, and a first image is obtained; a second image acquisition step in which the gain of the detector is set to a second gain value, which is different to the first gain value, charged particle beam scanning is carried out on the specimen, and a second image is obtained; and an image combination step in which the first gain value and the second gain value are used and the first image and the second image are combined.
Abstract:
A transmission electron microscope micro-grid includes a carbon nanotube layer sandwiched between a first metal layer and a second metal layer. The carbon nanotube layer includes a first surface and a second surface opposite to each other, and the carbon nanotube layer comprises a number of carbon nanotubes. The first metal layer is attached on the first surface. The second metal layer is attached on the second surface. The first metal layer and the second metal layer are bonded with the carbon nanotube layer via a number of dangling bonds on the number of carbon nanotubes, the first metal layer defines a number of first through holes, the second metal layer defines a number of second through holes, and the carbon nanotube layer is exposed through the number of first through holes and the number of second through holes.
Abstract:
An apparatus for use in a charged particle multi-beam lithography system is disclosed. The apparatus includes a plurality of charged particle doublets each having a first aperture and each configured to demagnify a beamlet incident upon the first aperture thereby producing a demagnified beamlet. The apparatus further includes a plurality of charged particle lenses each associated with one of the charged particle doublets, each having a second aperture, and each configured to receive the demagnified beamlet from the associated charged particle doublet and to realize one of two states: a switched-on state, wherein the demagnified beamlet is allowed to travel along a desired path, and a switched-off state, wherein the demagnified beamlet is prevented from traveling along the desired path. In embodiments, the first aperture is greater than the second aperture, thereby improving particle beam efficiency in the charged particle multi-beam lithography system.
Abstract:
An improved method of preparing ultra-thin TEM samples that combines backside thinning with an additional cleaning step to remove surface defects on the FIB-facing substrate surface. This additional step results in the creation of a cleaned, uniform “hardmask” that controls the ultimate results of the sample thinning, and allows for reliable and robust preparation of samples having thicknesses down to the 10 nm range.
Abstract:
A method includes irradiating a surface of a sample, which is made-up of multiple types of materials, with a beam of primary electrons. Emitted electrons emitted from the irradiated sample are detected using multiple detectors that are positioned at respective different positions relative to the sample, so as to produce respective detector outputs. Calibration factors are computed to compensate for variations in emitted electron yield among the types of the materials, by identifying, for each material type, one or more horizontal regions on the surface that are made-up of the material type, and computing a calibration factor for the material type based on at least one of the detector outputs at the identified horizontal regions. The calibration factors are applied to the detector outputs. A three-dimensional topographical model of the surface is calculated based on the detector outputs to which the calibration factors are applied.