公开(公告)号：US20090283669A1

公开(公告)日：2009-11-19

申请号：US12122108

申请日：2008-05-16

Applicant: Thomas Parrill ,  Aditya Agarwal

Inventor： Thomas Parrill ,  Aditya Agarwal

IPC: H01J49/26 ,  G21K5/10

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/20 ,  H01J2237/2007

Abstract: Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving.

Abstract translation: 离子注入机特别适用于通过离子注入和裂解来制造与制造光伏器件相关的工艺剂量和能量需求。

公开(公告)号：US07608838B1

公开(公告)日：2009-10-27

申请号：US11623258

申请日：2007-01-15

Applicant: Raymond Browning

Inventor： Raymond Browning

IPC: H01J49/20

CPC classification number: H01J37/05 ,  H01J37/285 ,  H01J2237/2855

Abstract: An electron optical component used to improve the spatial resolution in magnetic projection electron lenses or other electron optical devices by filtering the cyclotron orbit radii of electron trajectories in the lens magnetic field.

Abstract translation: 一种用于通过滤波透镜磁场中的电子轨迹的回旋加速器轨道半径来改善磁性投影电子透镜或其它电子光学器件中的空间分辨率的电子光学部件。

公开(公告)号：US07601972B2

公开(公告)日：2009-10-13

申请号：US11907097

申请日：2007-10-09

Applicant: Mamoru Nakasuji ,  Nobuharu Noji ,  Tohru Satake ,  Toshifumi Kimba ,  Hirosi Sobukawa ,  Shoji Yoshikawa ,  Tsutomu Karimata ,  Shin Oowada ,  Mutsumi Saito ,  Muneki Hamashima ,  Toru Takagi

Inventor： Mamoru Nakasuji ,  Nobuharu Noji ,  Tohru Satake ,  Toshifumi Kimba ,  Hirosi Sobukawa ,  Shoji Yoshikawa ,  Tsutomu Karimata ,  Shin Oowada ,  Mutsumi Saito ,  Muneki Hamashima ,  Toru Takagi

IPC: H01J37/18

CPC classification number: G03F7/70616 ,  G01N23/225 ,  H01J37/05 ,  H01J37/06 ,  H01J37/073 ,  H01J37/075 ,  H01J37/185 ,  H01J37/20 ,  H01J37/222 ,  H01J37/226 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0435 ,  H01J2237/057 ,  H01J2237/06316 ,  H01J2237/082 ,  H01J2237/202 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/22 ,  H01J2237/2446 ,  H01J2237/24485 ,  H01J2237/24564 ,  H01J2237/248 ,  H01J2237/2482 ,  H01J2237/2806 ,  H01J2237/2816 ,  H01J2237/2817

Abstract: An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.

公开(公告)号：US20090242790A1

公开(公告)日：2009-10-01

申请号：US12059855

申请日：2008-03-31

Applicant: Lee Chen ,  Lin Xu ,  Ronald Victor Bravenec

Inventor： Lee Chen ,  Lin Xu ,  Ronald Victor Bravenec

IPC: H01J37/04

CPC classification number: H01J37/05 ,  H01J37/32422 ,  H01J37/32935 ,  H01J49/443 ,  H01J2237/053

Abstract: An ion energy analyzer is described for use in diagnosing the ion energy distribution (IED) of ions incident on a radio frequency (RF) biased substrate immersed in plasma. The ion energy analyzer comprises an entrance grid exposed to the plasma, an ion selection grid disposed proximate to the entrance grid, an electron rejection grid disposed proximate to the ion selection grid, and an ion current collector disposed proximate to the electron rejection grid. The ion selection grid is coupled to an ion selection voltage source configured to positively bias the ion selection grid by an ion selection voltage, and the electron rejection grid is coupled to an electron rejection voltage source configured to negatively bias the electron rejection grid by an electron rejection voltage. Furthermore, an ion current meter is coupled to the ion current collector to measure the ion current.

Abstract translation: 描述了用于诊断入射在等离子体中的射频（RF）偏压衬底上的离子的离子能量分布（IED）的离子能量分析器。 离子能量分析器包括暴露于等离子体的入口栅格，靠近入口栅格设置的离子选择栅格，靠近离子选择栅极设置的电子排斥栅格，以及靠近电子排斥栅极设置的离子集电器。 离子选择网格耦合到离子选择电压源，其被配置为通过离子选择电压对离子选择栅极进行正偏置，并且电子抑制栅极耦合到被配置为通过电子负偏置电子排斥栅极的电子阻挡电压源 拒绝电压。 此外，离子电流计耦合到离子集电器以测量离子电流。

公开(公告)号：US07544958B2

公开(公告)日：2009-06-09

申请号：US11728020

申请日：2007-03-23

Applicant: Russell John Low

Inventor： Russell John Low

IPC: H01J37/317

CPC classification number: H01J37/05 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/057 ,  H01J2237/31705

Abstract: A method includes generating an ion beam having ions at a first charge state, accelerating the ions at the first charge state to a final energy, altering the first charge state to a second charge state for some of said ions, the second charge state less than the first charge state, providing an ion beam having ions at the second charge state and parasitic beamlets having ions at a charge state different than the second charge state, directing the ion beam having ions at the second charge state towards a wafer, and directing the parasitic beamlets away from the wafer. An ion implanter having a charge exchange apparatus is also provided.

Abstract translation: 一种方法包括产生具有处于第一充电状态的离子的离子束，将处于第一充电状态的离子加速到最终能量，将一些所述离子的第一充电状态改变为第二充电状态，第二充电状态小于 第一充电状态，提供具有处于第二充电状态的离子的离子束和具有不同于第二充电状态的充电状态的离子的寄生子束，将具有处于第二充电状态的离子的离子束引向晶片，并引导 寄生的子束远离晶片。 还提供了具有电荷交换装置的离子注入机。

公开(公告)号：US07511288B2

公开(公告)日：2009-03-31

申请号：US11575197

申请日：2005-11-14

Applicant: Seiji Ogata ,  Yuzo Sakurada ,  Masayuki Sekiguchi ,  Tsutomu Nishihashi

Inventor： Seiji Ogata ,  Yuzo Sakurada ,  Masayuki Sekiguchi ,  Tsutomu Nishihashi

IPC: H01J37/02

CPC classification number: H01L21/265 ,  H01J37/05 ,  H01J37/147 ,  H01J37/1474 ,  H01J37/3171 ,  H01J2237/057 ,  H01J2237/30483

Abstract: To provide an ion implantation device which suppresses diffusion of an ion beam, can finely control a scanning waveform and can obtain a large scanning angle of about 10°.In the ion implantation device, first, second and third chambers 12A, 14A and 16A are arranged in predetermined places on a beam line, first and second gaps 20A and 22A intervene between the first chamber 12A and the second chamber 14A and between the second chamber 14A and the third chamber 16A, the second chamber 14A is electrically insulated from the first and third chambers 12A and 16A via first and second electrode pairs 26A and 28A attached to the first and second gaps 20A and 22A, respectively, the first and second electrode pairs 26A and 28A obliquely cross a standard axis J of the ion beam at a predetermined angle in opposite directions, and the second chamber 14 is connected to a scanning power source 40A which applies an electric potential having desired scanning waveform.

Abstract translation: 为了提供抑制离子束扩散的离子注入装置，可以精细地控制扫描波形，并且可以获得大约10°的大扫描角度。 在离子注入装置中，第一，第二和第三室12A，14A和16A布置在束线上的预定位置，第一和第二间隙20A和22A插入在第一室12A和第二室14A之间以及第二室 14A和第三室16A中，第二室14A经由分别连接到第一和第二间隙20A和22A的第一和第二电极对26A和28A与第一和第三室12A和16A电绝缘，第一和第二电极 对26A和28A以相反方向以预定角度倾斜地跨越离子束的标准轴线J，并且第二腔室14连接到扫描电源40A，扫描电源40A施加具有期望的扫描波形的电位。

公开(公告)号：US07462843B2

公开(公告)日：2008-12-09

申请号：US11209484

申请日：2005-08-22

Applicant: Jiong Chen ,  Nicholas R. White

Inventor： Jiong Chen ,  Nicholas R. White

IPC: G21K5/10

CPC classification number: H01J37/05 ,  H01J37/3171 ,  H01J49/30 ,  H01J2237/055 ,  H01J2237/057

Abstract: This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. The invention further discloses a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The invention discloses methods of ion implantation in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning, and from a simple path to an s-shaped path with deceleration.

Abstract translation: 本发明公开了一种具有多种工作模式的离子注入装置。 它具有离子源和用于从其提取带状离子束的离子提取装置。 离子注入装置包括用于选择具有特定质荷比的离子的磁分析器，以通过质量狭缝投影到基底上。 提供多极镜头以控制光束的均匀性和准直。 本发明还公开了一种双路束线，其中第二路径包括并入能量过滤的减速系统。 本发明公开了一种离子注入方法，其中注入模式可以从目标的一维扫描切换到二维扫描，并且从简单的路径切换到具有减速的s形路径。

公开(公告)号：US07459680B2

公开(公告)日：2008-12-02

申请号：US11393367

申请日：2006-03-30

Applicant: Toshikatsu Kaneyama

Inventor： Toshikatsu Kaneyama

IPC: H01J40/00 ,  H01J47/00

CPC classification number: H01J37/05 ,  H01J37/265 ,  H01J40/02 ,  H01J2237/057 ,  H01J2237/221 ,  H01J2237/2446 ,  H01J2237/24585

Abstract: A method of analysis using an energy loss spectrometer and a transmission electron microscope equipped with the energy loss spectrometer. The spectrometer has a CCD camera for recording plural spectra as one photoelectric device image and a controller for batch reading in images from the camera, converting the positions of the pixels forming the images, and splitting each image into plural spectra. This permits improvement of the processing speed of the spectrometer.

Abstract translation: 使用能量损失光谱仪和配备有能量损失光谱仪的透射电子显微镜进行分析的方法。 光谱仪具有用于将多个光谱作为一个光电装置图像记录的CCD照相机，以及用于从照相机批量读取图像的控制器，转换形成图像的像素的位置，并将每个图像分割成多个光谱。 这样可以提高光谱仪的处理速度。

公开(公告)号：US07429743B2

公开(公告)日：2008-09-30

申请号：US11202111

申请日：2005-08-12

Applicant: Mitsuaki Kabasawa ,  Mitsukuni Tsukihara

Inventor： Mitsuaki Kabasawa ,  Mitsukuni Tsukihara

IPC: H01L49/00

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/023 ,  H01J37/05 ,  H01J37/1474 ,  H01J37/1478 ,  H01J37/15 ,  H01J37/3007 ,  H01J2237/0041 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/0458 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/061 ,  H01J2237/0835 ,  H01J2237/1536 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/30477 ,  H01J2237/31705

Abstract: The present invention is a method to enhance accuracy of irradiation with beam for an irradiation system with a beam. The irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a scanner which swings the beam reciprocally with high speed, a beam parallelizing device, an acceleration/deceleration device, an energy filtering device, and beam monitors. The beam transformer comprises a vertically focusing synchronized quadrupole electromagnet syQD and a horizontally focusing synchronized quadrupole electromagnet syQF. Consequently, it is possible to correct at least one of a deviation in beam divergence angle and a deviation in beam size within a range between a center trajectory and an outer trajectory after swinging of the beam by the scanner.

Abstract translation: 本发明是提高具有光束的照射系统的光束照射精度的方法。 照射系统包括光束产生源，质量分析装置，光束变换器，高速摆动光束的扫描器，光束并行化装置，加速/减速装置，能量过滤装置和光束监视器。 光束变换器包括垂直聚焦同步四极电磁体syQD和水平聚焦同步四极电磁体syQF。 因此，可以通过扫描仪摆动光束之后，在中心轨迹和外部轨迹之间的范围内校正光束发散角的偏差和光束尺寸的偏差中的至少一个。

公开(公告)号：US07414249B2

公开(公告)日：2008-08-19

申请号：US11289863

申请日：2005-11-30

Applicant: Kenneth H. Purser ,  Norman L. Turner

Inventor： Kenneth H. Purser ,  Norman L. Turner

IPC: H01J3/20 ,  H01J37/14

CPC classification number: H01J37/05 ,  H01J37/1472 ,  H01J37/3171 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/152 ,  H01J2237/31701

Abstract: A method and apparatus satisfying growing demands for improving the intensity of implanting ions that impact a semiconductor wafer as it passes under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes for combating the disruptive effects of ion-beam induced space-charge forces. The design of the novel optical elements makes possible: (1) Focusing of a ribbon ion beam as the beam passes through uniform or non-uniform magnetic fields; (2) Reduction of the losses of ions comprising a d.c. ribbon beam to the magnetic poles when a ribbon beam is deflected by a magnetic field.