Abstract:
Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be deposited onto a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beam columns. Reducing the number of process steps, and eliminating lithography steps, in localized material addition has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material deposition allows for controlled variation of deposition rate and enables creation of 3D structures. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted, highly configurable substrate processing, advantageously using large arrays of said beam columns.
Abstract:
The present invention provides methods and systems for an ion generation device that includes an elongate housing having a back portion and a pair of side portions extending from the back portion and forming a cavity therein. A conductive portion is disposed within the cavity and connected to a power supply for providing power to the conductive portion. A plurality of tines are engaged to the conductive portion.
Abstract:
A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.
Abstract:
According to one embodiment, a manufacturing method of a magnetoresistive effect element includes forming a laminated structure on a substrate, the laminated structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having an invariable magnetization direction, and a non-magnetic layer between the first and second magnetic layers, forming a first mask layer having a predetermined plane shape on the laminated structure, and processing the laminated structure based on the first mask layer by using an ion beam whose solid angle in a center of the substrate is 10° or more.
Abstract:
An apparatus for separating ions having different mass or charge includes a waveguide conduit coupled to a microwave source for transmitting microwaves through openings in the waveguide conduit. The outlet ends of pipes are positioned at the openings for transporting material from a material source to the openings. A plasma chamber is in communication with the waveguide tube through the openings. The plasma chamber receives through the openings microwaves from the waveguide tube and material from the pipes. The plasma chamber includes magnets disposed in an outer wall thereof for forming a magnetic field in the plasma chamber. The plasma chamber includes a charged cover at a side of the chamber opposite the side containing the openings. The cover includes extraction holes through which ion beams from the plasma chamber are extracted. Deflectors coupled to one of the extraction holes receive the ion beams extracted from the plasma chamber. Each deflector bends an ion beam and provides separate passages for capturing ions following different trajectories from the bending of the ion beam based on their respective mass or charge.
Abstract:
The present invention provides methods and systems for an ion generation device that includes an elongate housing having a back portion and a pair of side portions extending from the back portion and forming a cavity therein. A conductive portion is disposed within the cavity and connected to a power supply for providing power to the conductive portion. A plurality of tines are engaged to the conductive portion.
Abstract:
A processing apparatus may include: an extraction plate disposed along a side of a plasma chamber, the extraction plate having a first and second aperture, and middle portion between the first and second aperture, the first and second aperture being configured to define a first and second ion beam when the plasma is present in the plasma chamber and an extraction voltage is applied between the extraction plate and a substrate; a hidden deflection electrode disposed adjacent the middle portion outside of the plasma chamber, and electrically isolated from the extraction plate; and a hidden deflection electrode power supply to apply a bias voltage to the hidden deflection electrode, wherein the bias voltage is configured to modify a mean angle of incidence of ions and/or a range of angles of incidence centered around the mean angle of incidence in the first and second ion beam.
Abstract:
An ion source filament clamp has a clamp member having first and second ends. The first end has one of a cam surface and a cam follower, and has first and second portions that are opposed to one another and separated by a slot having a lead opening defined therein to receive a lead of an ion source filament. An actuator pin extends along an actuator pin axis and has first and second sections. The first section is coupled to the first portion of the clamp member. The actuator pin extends through, and is in sliding engagement with, a thru-hole in the second portion of the clamp member. A cam member is operably coupled to the second section of the actuator pin. The cam member has a handle and the other of the cam surface and cam follower and is configured to rotate between a clamped position and an unclamped position. The cam follower slidingly contacts the cam surface. In the clamped position, the cam follower engages the cam surface in a first predetermined manner, thus selectively compressing the first and second portions of the clamp member toward one another and exerting a clamping pressure on the lead within the lead opening while inducing a spring tension between the first and second portions of the clamp member. In the unclamped position, the cam follower engages the cam surface in a second predetermined manner, wherein the spring tension extends the first and second portions of the clamp member apart from one another, therein releasing the clamping pressure on the lead within the lead opening.
Abstract:
An ion source for an implanter includes a first solid state source electrode disposed in an ion source chamber. The first solid state source electrode includes a source material coupled to a first negative potential node. A second solid state source electrode is disposed in the ion source chamber. The second solid state source electrode includes the source material coupled to a second negative potential node, and the first solid state source electrode and the second solid state source electrode are configured to produce ions to be implanted by the implanter.
Abstract:
The present invention provides methods and systems for an ion generator mounting device for application of bipolar ionization to airflow within a conduit, the device includes a housing for mounting to the conduit having an internal panel within the enclosure, and an arm extending from the housing for extension into the conduit and containing at least one opening. At least one coupling for mounting an ion generator to the arm oriented with an axis extending between a pair of electrodes of the ion generator being generally perpendicular to a flow direction of the airflow within the conduit.