公开(公告)号：US20050230621A1

公开(公告)日：2005-10-20

申请号：US11106368

申请日：2005-04-14

Applicant: Klaus Edinger ,  Josef Sellmair ,  Thorsten Hofmann

Inventor： Klaus Edinger ,  Josef Sellmair ,  Thorsten Hofmann

IPC: G01N23/00 ,  G01N23/227 ,  H01J37/02 ,  H01J37/28

CPC classification number: H01J37/026 ,  G01N23/2273 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/0044 ,  H01J2237/026

Abstract: An apparatus for investigating and/or modifying a sample with charged particles, in particular a scanning electron microscope, is provided. The apparatus comprises a beam (1, 2) of charged particles, a shielding element (10) having an opening (30) for the beam of charged particles to pass through, wherein the opening (30) is sufficiently small and the shielding element (10) sufficiently closely positioned to the surface (20) of the sample to reduce the influence of charge accumulation effects at the surface on the beam of charged particles.

Abstract translation: 提供了一种用于研究和/或修饰具有带电粒子的样品的装置，特别是扫描电子显微镜。 该设备包括带电粒子的束（1,2），具有用于带电粒子束通过的开口（30）的屏蔽元件（10），其中开口（30）足够小并且屏蔽元件 10）足够紧密地定位于样品的表面（20），以减少带电粒子束上的表面处的电荷累积效应的影响。

公开(公告)号：US20050218344A1

公开(公告)日：2005-10-06

申请号：US10818233

申请日：2004-04-05

Applicant: Ronald Starcher

Inventor： Ronald Starcher

IPC: H01J37/02 ,  H01J37/304 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J2237/0045

Abstract: A means of neutralizing the excess charge on workpieces, such as semiconductor wafers, that results from ion-implantation processes, wherein the excess positive charge on a small area of the workpiece surface is locally sensed, and in response, an appropriate dose of charge-compensating electrons is delivered from an electron emission source to the area of excess charge on the workpiece. A charge-sensing probe and a voltage-controlled electron generator array are configurationally and operatively coupled in a closed feedback loop, and are made to scan the surface of the workpiece, in close but non-contacting proximity to the workpiece. Arrays of charge-sensing probes and electron generator arrays can be configured for rapid coverage of the implanted areas of the workpiece. The present invention has significant advantages over other methods, such as plasma and electron showers and plasma flood systems, for neutralizing the excess charge due to ion implantation.

Abstract translation: 一种中和离子注入工艺产生的工件（例如半导体晶片）上的过量电荷的方法，其中局部检测在工件表面的小区域上的过量正电荷，并且作为响应，适当剂量的电荷 - 补偿电子从电子发射源输送到工件上的过量电荷区域。 电荷感测探针和电压控制的电子发生器阵列在闭合反馈回路中构造和操作地耦合，并且被制造成以接近但非接近的工件扫描工件的表面。 电荷感测探针和电子发生器阵列的阵列可被配置为快速覆盖工件的注入区域。 本发明与诸如等离子体和电子淋浴器和等离子体洪水系统的其它方法相比具有显着的优点，用于中和由于离子注入引起的过量电荷。

公开(公告)号：US06884992B1

公开(公告)日：2005-04-26

申请号：US09423155

申请日：1998-04-29

Applicant: Peter Heiland

Inventor： Peter Heiland

IPC: H01J37/22 ,  G02B21/00 ,  H01J37/02 ,  H01J37/147 ,  H01J3/14

CPC classification number: H01J37/02 ,  G02B21/00 ,  H01J2237/0216 ,  H01J2237/28

Abstract: An imaging and raster-mode scanning apparatus has a compensation device for compensating for ambient influences that may degrade the imaging, comprising an electrical filter, and at least one sensor for providing a first signal dependent on the ambient influences the first signal passes through the filter directly and drives an internal actuator and a internal control elements of the apparatus, which has an effect on the imaging and on the image display, in a calibrated state of the apparatus, which comprises a setting of a transfer characteristic of the filter, image degradations are greatly reduced or essentially compensated for. The filter for calibrating the apparatus, has a calibration input and a second signal is applied to the calibration input of the filter.

Abstract translation: 成像和光栅模式扫描装置具有补偿装置，用于补偿可能降低成像的环境影响，包括电过滤器，以及至少一个传感器，用于提供取决于环境的第一信号影响第一信号通过过滤器 直接驱动装置的内部致动器和内部控制元件，其对成像和图像显示具有影响，该装置的校准状态包括滤波器的传送特性的设置，图像劣化 大大减少或基本上被补偿。 用于校准装置的滤波器具有校准输入，并且第二信号被施加到滤波器的校准输入。

公开(公告)号：US06867422B1

公开(公告)日：2005-03-15

申请号：US09830631

申请日：1999-10-29

Applicant: Hiroyuki Ito ,  Hiroshi Asechi

Inventor： Hiroyuki Ito ,  Hiroshi Asechi

IPC: C23C14/48 ,  H01J37/02 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J2237/0041 ,  H01J2237/022

Abstract: An ion implantation apparatus comprises an ion source section (18) for generating ions; an ion implantation section (14) for implanting the ions generated in the ion source section (18), in a substrate (92); a charged particle generator (62) for generating charged particles having a charge opposite to that of the ions; a beam guide section (24) having an inlet aperture (24a) for accepting the ions from the ion source section (18), an outlet aperture (24b) for delivering the ions into the ion implantation section (18), a guide tube (24c) extending from the inlet aperture (24a) to the outlet aperture (24b), and an introducing section (80) having an opening (82) thereof in an internal surface (24d) of the guide tube (24c), for introducing the charged particles from the charged particle generator (62) into the guide tube (24c); and a shield section (84) located between the opening (82) of the introducing section (80) and the outlet aperture (24b) inside the guide tube (24c). A shield surface (84a) of the shield section (84) blocks the charged particles' reaching the wafer.

Abstract translation: 离子注入装置包括用于产生离子的离子源部分（18）; 用于将在所述离子源部分（18）中产生的离子注入基板（92）中的离子注入部分（14）; 带电粒子发生器（62），用于产生具有与离子相反的电荷的带电粒子; 具有用于接收来自离子源部分（18）的离子的入口孔（24a）的射束引导部分（24），用于将离子输送到离子注入部分（18）中的出口孔（24b），引导管 24c）从入口孔（24a）延伸到出口孔（24b），以及在导管（24c）的内表面（24d）中具有开口（82）的引入部分， 带电粒子从带电粒子发生器（62）进入引导管（24c）中; 以及位于引导部分（80）的开口（82）和引导管（24c）内部的出口孔（24b）之间的屏蔽部分（84）。 屏蔽部分（84）的屏蔽表面（84a）阻挡到达晶片的带电粒子。

公开(公告)号：US6155542A

公开(公告)日：2000-12-05

申请号：US773010

申请日：1997-03-10

Applicant: Hiroaki Kato ,  Takehiko Mayama

Inventor： Hiroaki Kato ,  Takehiko Mayama

IPC: F16F15/02 ,  G03F7/20 ,  G05D19/02 ,  H01J37/02 ,  H01L21/00 ,  H01L21/027 ,  H01L21/68 ,  H01L21/30

CPC classification number: H01L21/67259 ,  G03F7/70716 ,  G03F7/709 ,  H01J37/02 ,  H01L21/68 ,  H01J2237/0216

Abstract: A vibration damping apparatus includes a plurality of actuators for removing vibration of a table as an object of vibration damping, a detection device for detecting a vibration status of the table, an acquisition device for acquiring compensation amounts for a plurality of directional elements, from the vibration status detected by the detection device, and an allocation device for allocating an actuator-driving force corresponding to a compensation amount for a predetermined directional element, among the compensation amounts acquired by the acquisition device, to an actuator having a small amount of driving force, allocated based on a compensation amount for another directional element.

Abstract translation: 一种减震装置，包括多个用于去除作为减振对象的工作台的振动的致动器，用于检测工作台的振动状态的检测装置，用于从多个方向元件获取补偿量的获取装置， 由检测装置检测到的振动状态，以及分配装置，用于将与由采集装置获取的补偿量中的预定方向元件的补偿量相对应的致动器驱动力分配给具有少量驱动力的致动器 ，基于另一方向元件的补偿量分配。

公开(公告)号：US6104025A

公开(公告)日：2000-08-15

申请号：US314303

申请日：1999-05-19

Applicant: Katsumi Tokiguchi ,  Takayoshi Seki ,  Kensuke Amemiya ,  Yasuo Yamashita ,  Kazuo Mera ,  Isao Hashimoto ,  Keiji Arimatsu

Inventor： Katsumi Tokiguchi ,  Takayoshi Seki ,  Kensuke Amemiya ,  Yasuo Yamashita ,  Kazuo Mera ,  Isao Hashimoto ,  Keiji Arimatsu

IPC: H01J37/20 ,  C23C14/48 ,  H01J37/02 ,  H01J37/30 ,  H01J37/317 ,  H01L21/265

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/026 ,  H01J37/3174 ,  H01J2237/0044

Abstract: An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.

Abstract translation: 当硅晶片在超过300℃的温度下离子注入时，离子注入装置能够防止在硅晶片的背面出现放电缺陷。离子注入装置的离子电流为10mA至100 以及用于将电子束照射到硅晶片的反面上的电子束产生装置。 控制电子束，使得在晶片和支撑晶片的旋转盘之间流动的电流基本上为零。

公开(公告)号：US6100536A

公开(公告)日：2000-08-08

申请号：US81596

申请日：1998-05-20

Applicant: Hiroyuki Ito ,  Xue-Yu Qian ,  Robert J. Mitchell ,  Stephen Moffatt

Inventor： Hiroyuki Ito ,  Xue-Yu Qian ,  Robert J. Mitchell ,  Stephen Moffatt

IPC: H01J37/20 ,  H01J37/02 ,  H01J37/077 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/026 ,  H01J2237/0041

Abstract: An Electron flood apparatus for neutralizing positive charge build-up on substrate during implantation of ions in a substrate by ion beam implantation apparatus. The electron flood apparatus comprises a tube for axially receiving and passing an ion beam to a substrate, an opening in a sidewall of the tube, a plasma chamber having an exit aperture in communication with said opening of said tube, a supply of inert gas to said plasma chamber, a high frequency power generator, and means to deliver high frequency power from said generator to maintain a plasma in said chamber to produce low energy electrons, whereby a flux of said low energy electrons emerges from said chamber through said exit aperture into said tube to merge with the ion beam.

Abstract translation: 一种电子泛滥装置，用于通过离子束注入装置在衬底中注入离子期间中和基底上的正电荷积聚。 电子泛滥装置包括用于轴向地接收并将离子束通过到衬底的管，管的侧壁中的开口，具有与所述管的所述开口连通的出口孔的等离子体室，向惰性气体供应惰性气体 所述等离子体室是高频发电机，以及用于从所述发生器输送高频功率以保持所述室中的等离子体以产生低能量电子的装置，由此所述低能电子的通量从所述室通过所述出口孔排出到 所述管与离子束合并。

公开(公告)号：US5864138A

公开(公告)日：1999-01-26

申请号：US715378

申请日：1996-09-12

Applicant: Tomoyuki Miyata ,  Peter Hohmann ,  Atsushi Katayama ,  Daiji Tsuboi ,  Hiroyuki Kobayashi ,  Hisashi Sato ,  Hiroyuki Kuriyama

Inventor： Tomoyuki Miyata ,  Peter Hohmann ,  Atsushi Katayama ,  Daiji Tsuboi ,  Hiroyuki Kobayashi ,  Hisashi Sato ,  Hiroyuki Kuriyama

IPC: G01Q30/02 ,  G01N23/00 ,  H01J37/02 ,  H01J37/26

CPC classification number: H01J37/02 ,  H01J37/26 ,  H01J2237/0216

Abstract: The electron microscope provides sufficient leg space for an observer sitting in a chair in a working posture and allows concentrated observation and swift operation of the electron microscope without burdening the observer. An electron gun column is supported on a support structure formed in a rectangular parallelepiped. The electron gun column, a column evacuation device and a viewing chamber are mounted on the dampers on the support structure through a vibration plate. The table is mounted on the support structure through table supports provided on the top surface of the support structure. Further, the table has an opening at a location corresponding to the viewing chamber so that the table and the viewing chamber, both mounted on the support structure, are not in contact with each other. The layout of the operation panel divides the operation devices of the electron microscope into a group of devices that are frequently reached by touch and operated during observation and a group of devices that are not frequently used during observation. The former group is arranged in arc areas within reach of the operator's arms when pivoted about the elbows as the operator rests his arms naturally on the operation table. The latter group is classified according to the functions performed and is arranged in positions that are behind the arc areas of pivoting arms and are easily recognized visually.

Abstract translation: 电子显微镜为坐在椅子上的观察者以工作姿态提供足够的腿部空间，并且允许电子显微镜的集中观察和快速操作而不会使观察者负担。 电子枪柱支撑在形成为长方体的支撑结构上。 电子枪柱，柱抽空装置和观察室通过振动板安装在支撑结构上的阻尼器上。 桌子通过设置在支撑结构的顶部表面上的桌子支撑件安装在支撑结构上。 此外，桌子在与观察室对应的位置处具有开口，使得安装在支撑结构上的桌子和观察室彼此不接触。 操作面板的布局将电子显微镜的操作装置分为在观察期间通过触摸和操作而频繁达到的一组装置以及在观察期间不经常使用的一组装置。 当操作者将手臂自然地放在手术台上时，前组被布置在围绕肘部枢转的操作者手臂的距离范围内的弧形区域中。 后者根据所执行的功能进行分类，并且布置在枢转臂的弧形区域的后面的位置，并且可以容易地被目视识别。

公开(公告)号：US5814819A

公开(公告)日：1998-09-29

申请号：US891688

申请日：1997-07-11

Applicant: Frank Sinclair ,  Victor Benveniste ,  Jiong Chen

Inventor： Frank Sinclair ,  Victor Benveniste ,  Jiong Chen

IPC: H01J37/317 ,  C23C14/48 ,  G21K1/14 ,  H01J37/02 ,  H01J27/02

CPC classification number: H01J37/026 ,  H01J2237/31701

Abstract: An improved ion beam neutralizer (22) is provided for neutralizing the electrical charge of an ion beam (28) output from an extraction aperture (50). The neutralizer comprises a source of water (52); a vaporizer (54) connected to the source of water; a mass flow controller (56) connected to the vaporizer; and an inlet (60) connected to the mass flow controller. The vaporizer (54) converts water from the source (52) from a liquid state to a vapor state. The mass flow controller (56) receives water vapor from the vaporizer (54) and meters the volume of water vapor output by a mass flow controller outlet (66). The inlet (60) is provided with an injection port (68) located proximate the ion beam extraction aperture (50) and receives the metered volume from the outlet (66). The injection port (68) is positioned near the extraction aperture so that the ion beam and the water vapor interact to neutralize the ion beam. The improved ion beam neutralizer (22) is especially effective in low energy (less than ten kilo-electron volts (10 KeV)) beam applications.

Abstract translation: 提供改进的离子束中和器（22），用于中和从提取孔（50）输出的离子束（28）的电荷。 中和器包括水源（52）; 连接到水源的蒸发器（54）; 连接到蒸发器的质量流量控制器（56） 以及连接到质量流量控制器的入口（60）。 蒸发器（54）将来自源（52）的水从液态转换为蒸汽状态。 质量流量控制器（56）接收来自蒸发器（54）的水蒸汽并且测量由质量流量控制器出口（66）输出的水蒸汽的体积。 入口（60）设置有靠近离子束提取孔（50）定位并从出口（66）接收计量体积的注射口（68）。 注入口（68）位于提取孔附近，使得离子束和水蒸气相互作用以中和离子束。 改进的离子束中和器（22）在低能量（小于十千伏电压（10KeV）））的应用中特别有效。

公开(公告)号：US5668368A

公开(公告)日：1997-09-16

申请号：US643252

申请日：1996-05-02

Applicant: Katsuhiko Sakai ,  Osamu Nasu ,  Yoichi Ose

Inventor： Katsuhiko Sakai ,  Osamu Nasu ,  Yoichi Ose

IPC: H01J37/02 ,  H01J37/30 ,  H05H3/00

CPC classification number: H01J37/026 ,  H01J2237/0041 ,  H01J2237/0044 ,  H01J2237/3175

Abstract: When a charged beam is irradiated on a sample, charge up of electric charge of the same polarity as that of the charged beam is built up on the sample surface. In order to neutralize the charge up electric charge, an apparatus for suppressing electrification of sample in charged beam irradiation apparatus is provided in which electric charge of opposite polarity to that of the charged beam is generated near the sample surface to neutralize the charged beam or charge up electric charge on the sample surface. The electric charge for neutralization is generated by admitting electric charge from a plasma generation unit to the vicinity of the sample surface ionizing gas generated from the sample surface by causing the charged beam to collide the gas or by irradiating electrons from an electron source on the sample surface. Especially when there is a possibility that impurities other than the electric charge for neutralization affect the sample adversely, an impurity generation source is blind folded with a cover so as not to be seen through from the sample and charged beam so that the impurities may be prevented from impinging upon the sample surface or intersecting the charged beam path.

Abstract translation: 当将带电束照射在样品上时，在样品表面上积累与带电束相同极性的电荷的充电。 为了中和充电电荷，提供了一种用于抑制带电束照射装置中的样品带电的装置，其中在样品表面附近产生与带电束的极性相反极性的电荷以中和充电的光束或电荷 样品表面上的电荷。 用于中和的电荷是通过将电荷从等离子体产生单元接收到从样品表面产生的样品表面电离气体附近，通过使带电的束撞击气体或通过从样品上的电子源照射电子而产生的 表面。 特别是当除了中和电荷以外的杂质有可能不利地影响样品时，杂质产生源被遮盖物盲目地折叠，从而不能从样品和带电束中透过，从而可以防止杂质 撞击在样品表面上或与带电光束相交。