公开(公告)号：USD1028913S1

公开(公告)日：2024-05-28

申请号：US29797476

申请日：2021-06-30

Applicant: ASM IP HOLDING B.V.

Designer： Rutvij Naik ,  Junwei Su ,  Wentao Wang ,  Chuqin Zhou ,  Xing Lin

Abstract: FIG. 1 is a top perspective view of a semiconductor deposition reactor ring;
FIG. 2 is a bottom perspective view thereof;
FIG. 3 is a front view thereof;
FIG. 4 is a back view thereof;
FIG. 5 is a left view thereof;
FIG. 6 is a right view thereof;
FIG. 7 is a top view thereof; and,
FIG. 8 is a bottom view thereof.
The broken lines in the drawings illustrate portions of the semiconductor deposition reactor ring that form no part of the claimed design.

公开(公告)号：US11988316B2

公开(公告)日：2024-05-21

申请号：US17944296

申请日：2022-09-14

Applicant: ASM IP Holding B.V.

Inventor： Andrew Michael Yednak, III

IPC: H01L21/67 ,  F16L53/38 ,  C23C16/455

CPC classification number: F16L53/38 ,  H01L21/67023 ,  C23C16/45561 ,  Y10T137/6416

Abstract: An apparatus capable of heating a liquid may provide a valve assembly configured to receive an incoming liquid from a bulk source. The valve assembly may control the flow of the liquid to a source vessel via a pipe system. The pipe system includes a first pipe directly connected to the valve assembly and a second pipe downstream from the first pipe and connected between the first pipe and the source valve. The second pipe is heated with a heating system that surrounds the second pipe, and the second pipe has a larger diameter than that of the first pipe.

公开(公告)号：US20240162036A1

公开(公告)日：2024-05-16

申请号：US18388548

申请日：2023-11-10

Applicant: ASM IP Holding B.V.

Inventor： Viraj Madhiwala ,  Eva Elisabeth Tois ,  Daniele Chiappe ,  Marko Tuominen

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/0217 ,  C23C16/308 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45527 ,  C23C16/56 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02312

Abstract: The disclosure relates to methods and deposition assemblies for selectively depositing material including silicon and nitrogen on a first surface of a substrate relative to the second surface of the same substrate. In the disclosure, material including silicon and nitrogen is selectively deposited on a first surface of a substrate relative to a second surface of the same substrate by a cyclic deposition process by providing a substrate in a reaction chamber, providing a silicon precursor comprising silicon and halogen into the reaction chamber in a vapor phase and providing a nitrogen precursor into the reaction chamber in a vapor phase to form the material including silicon and nitrogen on the first surface.

公开(公告)号：US20240153767A1

公开(公告)日：2024-05-09

申请号：US18386128

申请日：2023-11-01

Applicant: ASM IP Holding B.V.

Inventor： Bart Vermeulen ,  Varun Sharma ,  Andrea Illiberi ,  Michael Givens ,  Charles Dezelah ,  Eric Shero

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/267 ,  H01L29/792 ,  H10B43/27

CPC classification number: H01L21/02565 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/24 ,  H01L29/242 ,  H01L29/267 ,  H01L29/792 ,  H10B43/27

Abstract: Disclosed are methods and systems for depositing layers including a p-type semiconducting oxide onto a surface of a substrate. The deposition process includes a cyclical deposition process. Exemplary structures in which the layers may be incorporated include 3D NAND cells, memory devices, metal-insulator-metal structured, and DRAM capacitors.

公开(公告)号：US20240150898A1

公开(公告)日：2024-05-09

申请号：US18386481

申请日：2023-11-02

Applicant: ASM IP Holding B.V.

Inventor： Yoshiyuki Kikuchi ,  Hirotsugu Sugiura ,  Alexey Remnev ,  Koei Aida ,  Lingjun Xue

IPC: C23C16/458 ,  H01J37/32

CPC classification number: C23C16/4585 ,  H01J37/32715 ,  H01J37/32743 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: A substrate processing apparatus is provided. A substrate processing apparatus comprises a reaction chamber provided with a chamber wall comprising a first sidewall, a second sidewall disposed opposite to the first sidewall, a bottom wall connected to the first sidewall and the second sidewall; a gate valve tunnel disposed in the first sidewall configured to be closed by a gate valve; a substrate support provided with a top plate and a shaft, the substrate support being disposed within the reaction chamber and configured to support a substrate on the top plate, wherein the substrate support is configured to be vertically movable between a process position and a transfer position; and a liner disposed around perimeter of the substrate support and configured to move with the substrate support, wherein an outer wall of the liner is configured to cover the gate valve tunnel when the substrate support is in the process position.

公开(公告)号：US11975357B2

公开(公告)日：2024-05-07

申请号：US17547083

申请日：2021-12-09

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore ,  Ivo Raaijmakers

IPC: C23C16/06 ,  B05D3/10 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28 ,  C23C16/40 ,  C23C18/06 ,  C23C18/12

CPC classification number: B05D3/107 ,  C23C16/02 ,  C23C16/045 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28 ,  C23C16/40 ,  C23C16/402 ,  C23C16/403 ,  C23C18/06 ,  C23C18/1208 ,  C23C18/1212 ,  C23C18/1216 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/1245

Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

公开(公告)号：US20240142014A1

公开(公告)日：2024-05-02

申请号：US18382568

申请日：2023-10-23

Applicant: ASM IP Holding B.V.

Inventor： Leonard Rodriguez

IPC: F16K27/00

CPC classification number: F16K27/003

Abstract: Various embodiments of the present technology may provide a valve manifold having a plurality of tiers with various through-holes and channels. The plurality of tiers may be connected together such that the through-holes and channels form a single, continuous flow path.

公开(公告)号：US20240141486A1

公开(公告)日：2024-05-02

申请号：US18410370

申请日：2024-01-11

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Todd Robert Dunn ,  Michael Eugene Givens ,  Jereld Lee Winkler ,  Paul Ma ,  Eric Shero

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/50 ,  C23C16/52

CPC classification number: C23C16/45512 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52

Abstract: Apparatus for mixing two or more gases prior to entering a reaction chamber, reactor systems including the apparatus, and methods of using the apparatus and systems are disclosed. The systems and methods as described herein can be used to, for example, pulse a mixture of two or more precursors to a reaction chamber.

公开(公告)号：US11971217B2

公开(公告)日：2024-04-30

申请号：US17844911

申请日：2022-06-21

Applicant: ASM IP Holding B.V.

Inventor： Theodorus G. M. Oosterlaken ,  Lucian Jdira ,  Herbert Terhorst

IPC: F27B5/04 ,  F27B5/10 ,  F27B5/16 ,  F27B5/18 ,  F27D1/18 ,  F27D3/00

CPC classification number: F27B5/04 ,  F27B5/10 ,  F27B5/16 ,  F27B5/18 ,  F27D1/1858 ,  F27D3/0084

Abstract: Batch furnace assembly for processing wafers, comprising a process chamber housing defining a process chamber and having a process chamber opening, a wafer boat housing defining a water boat chamber, a door assembly, a differential pressure sensor, and a controller. The door assembly has a closed position in which it closes off the process chamber opening. The door assembly defines in a closed position a door assembly chamber having a purge gas inlet for supplying purge gas to the door assembly chamber for gas sealingly separating the process chamber from the wafer boat chamber. The differential pressure sensor assembly fluidly connects to the door assembly chamber and is configured to determine a pressure difference between a pressure in the door assembly chamber and a reference pressure in a reference pressure chamber. The controller is configured to establish whether the pressure difference is in a desired pressure range.

公开(公告)号：US11970769B2

公开(公告)日：2024-04-30

申请号：US17845150

申请日：2022-06-21

Applicant: ASM IP Holding B.V.

Inventor： Trigagema Gama ,  Ryu Nakano

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/56

CPC classification number: C23C16/402 ,  C23C16/45527 ,  C23C16/45553 ,  C23C16/4583 ,  C23C16/56

Abstract: Methods and systems for depositing a layer comprising silicon oxide on the substrate are disclosed. Exemplary methods include cyclical deposition methods that include providing a first silicon precursor to the reaction chamber, providing a second silicon precursor, and using a reactant or a non-reactant gas forming silicon oxide on a surface of the substrate. Exemplary methods can further include a treatment step.